VISHAY IL300 User Manual

Vishay Semiconductors
i179026
C
NC
NC
C
C
1
2
3
4
8
7
6
5
K2
K1
Linear Optocoupler, High Gain Stability, Wide Bandwidth
Features
• Couples AC and DC signals
• 0.01 % Servo Linearity
• Wide Bandwidth, > 200 kHz
• High Gain Stability, ± 0.05 %/ °C
• Low Input-Output Capacitance
• Low Power Consumption, < 15 mW
• Isolation Test Voltage, 5300 V
• Internal Insulation Distance, > 0.4 mm for VDE
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Agency Approvals
• UL File #E52744
• DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1, Add -X001 Suffix
RMS
, 1.0 sec.
IL300
Applications
Power Supply Feedback Voltage/Current Medical Sensor Isolation Audio Signal Interfacing Isolated Process Control Transducers Digital Telephone Isolation
Description
The IL300 Linear Optocoupler consists of an AlGaAs IRLED irradiating an isolated feedback and an output PIN photodiode in a bifurcated arrangement. The feedback photodiode captures a percentage of the LED’s flux and generates a control signal (I can be used to servo the LED drive current. This tech­nique compensates for the LED’s non-linear, time, and temperature characteristics. The output PIN pho­todiode produces an output signal (I
) that is linearly
P2
related to the servo optical flux created by the LED. The time and temperature stability of the input-output
coupler gain (K3) is insured by using matched PIN photodiodes that accurately track the output flux of the LED.
P1
) that
Order Information
Part Remarks
IL300 K3 = 0.557 - 1.618, DIP-8
IL300-DEFG K3 = 0.765 - 1.181, DIP-8
IL300-EF K3 = 0.851 - 1.061, DIP-8
IL300-E K3 = 0.851 - 0.955, DIP-8
IL300-F K3 = 0.945 - 1.061, DIP-8
IL300-X006 K3 = 0.557 - 1.618, DIP-8 400mil (option 6)
IL300-X007 K3 = 0.557 - 1.618, SMD-8 (option 7)
IL300-X009 K3 = 0.557 - 1.618, SMD-8 (option 9)
IL300-DEFG-X006 K3 = 0.765 - 1.181, DIP-8 400 mil (option 6)
IL300-DEFG-X007 K3 = 0.765 - 1.181, SMD-8 (option 7)
IL300-DEFG-X009 K3 = 0.765 - 1.181, SMD-8 (option 9)
IL300-EF-X006 K3 = 0.851 - 1.061, DIP-8 400 mil (option 6)
IL300-EF-X007 K3 = 0.851 - 1.061, SMD-8 (option 7)
IL300-EF-X009 K3 = 0.851 - 1.061, SMD-8 (option 9)
IL300-E-X006 K3 = 0.851 - 0.955, DIP-8 400 mil (option 6)
IL300-E-X007 K3 = 0.851 - 0.955, SMD-8 (option 7)
IL300-E-X009 K3 = 0.851 - 0.955, SMD-8 (option 9)
IL300-F-X006 K3 = 0.945 - 1.061, DIP-8 400 mil (option 6)
IL300-F-X007 K3 = 0.945 - 1.061, SMD-8 (option 7)
IL300-F-X009 K3 = 0.945 - 1.061, SMD-8 (option 9)
For additional information on the available options refer to Option Information.
Document Number 83622
Rev. 1.5, 24-Mar-05
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1
IL300
Vishay Semiconductors
VISHAY
Operation Description
A typical application circuit (Figure 1) uses an opera­tional amplifier at the circuit input to drive the LED. The feedback photodiode sources current to R1 con­nected to the inverting input of U1. The photocurrent, I
, will be of a magnitude to satisfy the relationship of
P1
(I
= VIN/R1).
P1
The magnitude of this current is directly proportional to the feedback transfer gain (K1) times the LED drive current ( V LED current to force sufficient photocurrent to keep the node voltage (Vb) equal to Va.
The output photodiode is connected to a non-invert­ing voltage follower amplifier. The photodiode load resistor, R2, performs the current to voltage conver­sion. The output amplifier voltage is the product of the output forward gain (K2) times the LED current and photodiode load, R2 ( V
Therefore, the overall transfer gain (V the ratio of the product of the output forward gain (K2) times the photodiode load resistor (R2) to the product of the feedback transfer gain (K1) times the input resistor (R1). This reduces to V
O/VIN
The overall transfer gain is completely independent of the LED forward current. The IL300 transfer gain (K3) is expressed as the ratio of the output gain (K2) to the feedback gain (K1). This shows that the circuit gain becomes the product of the IL300 transfer gain times the ratio of the output to input resistors V
O/VIN
/R1 = K1 • IF). The op-amp will supply
IN
= IF • K2 • R2).
O
O/VIN
=(K2 • R2)/(K1 • R1).
= K3 (R2/R1).
) becomes
K3-Transfer Gain Linearity
The percent deviation of the Transfer Gain, as a func­tion of LED or temperature from a specific Transfer Gain at a fixed LED current and temperature.
Photodiode
A silicon diode operating as a current source. The out­put current is proportional to the incident optical flux supplied by the LED emitter. The diode is operated in the photovoltaic or photoconductive mode. In the pho­tovoltaic mode the diode functions as a current source in parallel with a forward biased silicon diode.
The magnitude of the output current and voltage is dependent upon the load resistor and the incident LED optical flux. When operated in the photoconduc­tive mode the diode is connected to a bias supply which reverse biases the silicon diode. The magni­tude of the output current is directly proportional to the LED incident optical flux.
LED (Light Emitting Diode)
An infrared emitter constructed of AlGaAs that emits at 890 nm operates efficiently with drive current from 500 µA to 40 mA. Best linearity can be obtained at drive currents between 5.0 mA to 20 mA. Its output flux typically changes by - 0.5 % /°C over the above operational current range.
Application Circuit
K1-Servo Gain
The ratio of the input photodiode current (IP1) to the LED current (I
) i.e., K1 = IP1/IF.
F
K2-Forward Gain
The ratio of the output photodiode current (IP2) to the LED current (I
), i.e., K2 = IP2/IF.
F
K3-Transfer Gain
The Transfer Gain is the ratio of the Forward Gain to the Servo gain, i.e., K3 = K2/K1.
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2
+
Vin
R1
Va
Vb
V
CC
+
U1
-
I
F
V
CC
lp 1
Figure 1. Typical Application Circuit
IL300
K2
8
7
6
5
lp 2
1
2
K1
3
4
V
CC
-
V
CC
U2
V
c
+
R2
Document Number 83622
Rev. 1.5, 24-Mar-05
V
iil300_01
out
VISHAY
IL300
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Value Unit
Power dissipation P
Derate linearly from 25 °C 2.13 mW/°C
Forward current I Surge current (pulse width < 10 µs) I
Reverse voltage V
Thermal resistance R
Junction temperature T
diss
F
PK
R
th
j
160 mW
60 mA
250 mA
5.0 V
470 K/W
100 °C
Output
Parameter Test condition Symbol Value Unit
Power dissipation P
Derate linearly from 25 °C 0.65 mW/°C
Reverse voltage V
Junction temperature T
Thermal resistance R
diss
R
j
th
50 mA
50 V
100 °C
1500 K/W
Coupler
Parameter Test condition Symbol Value Unit
Total package dissipation at 25 °C
Derate linearly from 25 °C 2.8 mW/°C
Storage temperature T
Operating temperature T
Isolation test voltage > 5300 V
Isolation resistance VIO = 500 V, T
V
= 500 V, T
IO
= 25 °C R
amb
= 100 °C R
amb
P
amb
tot
stg
IO
IO
210 mW
- 55 to + 150 °C
- 55 to + 100 °C
RMS
12
> 10
11
> 10
Ω Ω
Document Number 83622
Rev. 1.5, 24-Mar-05
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3
IL300
VISHAY
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
LED Emitter
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Temperature coefficient ∆VF/°C - 2.2 mV/°C
V
F
Reverse current V
Junction capacitance V
Dynamic resistance I
= 10 mA V
F
= 5 V I
R
= 0 V, f = 1.0 MHz C
F
= 10 mA ∆VF/I
F
F
R
j
F
1.25 1.50 V
1.0 µA
15 pF
6.0
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Dark current V
Open circuit voltage I
Short circuit current I
Junction capacitance V
Noise equivalent power V
= -15 V, IF = 0 µsI
det
= 10 mA V
F
= 10 mA I
F
= 0, f = 1.0 MHz C
F
= 15 V NEP
det
D
D
SC
j
1.0 25 nA
500 mV
70 µA
12 pF
14
4 x 10
W/Hz
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Document Number 83622
Rev. 1.5, 24-Mar-05
VISHAY
IL300
Vishay Semiconductors
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Input- output capacitance V
K1, Servo gain (I
)I
P1/IF
Servo current, see Note 1,2 I
K2, Forward gain (I
)I
P2/IF
Forward current I
K3, Transfer gain (K2/K1) see Note 1,2
Transfer gain linearity I
Photoconductive Operation
Frequency response I
Phase response at 200 kHz V
1. Bin Sorting:
K3 (transfer gain) is sorted into bins that are ± 6 % , as follows:
Bin A = 0.557 - 0.626
Bin B = 0.620 - 0.696
Bin C = 0.690 - 0.773
Bin D = 0.765 - 0.859
Bin E = 0.851 - 0.955
Bin F = 0.945 - 1.061
Bin G = 1.051 - 1.181
Bin H = 1.169 - 1.311
Bin I = 1.297 - 1.456
Bin J = 1.442 - 1.618
K3 = K2/K1. K3 is tested at I
F
2. Bin Categories: All IL300s are sorted into a K3 bin, indicated by an alpha character that is marked on the part. The bins range from "A"
through "J".
The IL300 is shipped in tubes of 50 each. Each tube contains only one category of K3. The category of the parts in the tube is marked on the tube label as well as on each individual part.
3. Category Options: Standard IL300 orders will be shipped from the categories that are available at the time of the order. Any of the ten
categories may be shipped. For customers requiring a narrower selection of bins, four different bin option parts are offered.
IL300-DEFG: Order this part number to receive categories D,E,F,G only.
IL300-EF: Order this part number to receive categories E, F only.
IL300-E: Order this part number to receive category E only.
= 0 V, f = 1.0 MHz 1.0 pF
F
= 10 mA, V
F
= 10 mA, V
F
= 10 mA, V
F
= 10 mA, V
F
= 10 mA, V
I
F
= 1.0 to 10 mA K3 ± 0.25 %
F
I
= 1.0 to 10 mA,
F
= 0 °C to 75 °C
T
amb
= 10 mA, MOD = ± 4.0 mA,
Fq
R
= 50
L
= - 15 V -45 Deg.
det
= 10 mA, V
det
= - 15 V K1 0.0050 0.007 0.011
det
= - 15 V I
det
= - 15 V K2 0.0036 0.007 0.011
det
= - 15 V I
det
= - 15 V K3 0.56 1.00 1.65 K2/K1
det
P1
P2
70 µA
70 µA
± 0.5 %
BW (-3 db) 200 KHz
= - 15 V.
Switching Characteristics
Parameter Test condition Symbol Min Ty p. Max Unit
Switching time ∆I
Rise time t
Fall tim e t
Document Number 83622
Rev. 1.5, 24-Mar-05
= 2.0 mA, IFq = 10 mA t
F
r
t
f
r
f
1.0 µs
1.0 µs
1.75 µs
1.75 µs
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