ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
i179018
A1
C2
A3
C4
8C
7E
6C
5E
Vishay Semiconductors
Optocoupler, Phototransistor Output, Dual Channel, SOIC-8
package
Features
• Two Channel Coupler
• SOIC-8A Surface Mountable Package
• Standard Lead Spacing of .05 "
• Available only on Tape and Reel Option (Conforms to EIA Standard 481-2)
• Isolation Test Voltage, 3000 V
• Compatible with Dual Wave, Vapor Phase and IR
Reflow Soldering
• Lead-free component
RMS
e3
Pb
Pb-free
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code Y
Description
The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T are
optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal
information, including a DC level, can be transmitted
by the device while maintaining a high degree of electrical isolation between input and output. The
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a
standard SOIC-8A small outline package for surface
mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package
conforms to standards for surface mounted devices.
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the adjacent circuits. The high BV
of 70 V gives a higher
CEO
safety margin compared to the industry standard of
30 V.
Order Information
Part Remarks
ILD205T CTR 40 - 80 %, SOIC-8
ILD206T CTR 63 - 125 %, SOIC-8
ILD207T CTR 100 - 200 %, SOIC-8
ILD211T CTR > 20 %, SOIC-8
ILD213T CTR > 100 %, SOIC-8
ILD217T CTR > 100 %, SOIC-8
For additional information on the available options refer to
Option Information.
Document Number 83647
Rev. 1.4, 26-Oct-04
www.vishay.com
1
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Peak reverse voltage V
Peak pulsed current 1.0 µs, 300 pps 1.0 A
Continuous forward current per
channel
Power dissipation P
Derate linearly from 25 °C 0.66 mW/°C
R
diss
Output
Para meter Test condition Symbol Val ue Unit
Collector-emitter breakdown voltage BV
Emitter-collector breakdown voltage BV
Power dissipation per channel P
Derate linearly from 25 °C 1.67 mW/°C
CEO
ECO
diss
6.0 V
30 mA
50 mW
70 V
7.0 V
125 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Total package dissipation
ambient (2 LEDs + 2 detectors,
2 channels)
Derate linearly from 25 °C 4.0 mW/°C
Storage temperature T
Operating temperature T
Soldering time from 260 °C T
P
tot
stg
amb
sld
300 mW
- 55 to + 150 °C
- 55 to + 100 °C
10 sec.
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
= 10 mA V
F
= 6.0 V I
R
= 0 C
R
F
R
O
1.2 1.55 V
0.1 100 µA
25 pF
www.vishay.com
2
Document Number 83647
Rev. 1.4, 26-Oct-04
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Output
Parameter Test condition Symbol Min Ty p . Max Unit
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-emitter leakage
current
Collector-emitter capacitance V
Coupler
Parameter Test condition Symbol Min Ty p . Max Unit
Collector-emitter saturation
voltage
Capacitance (input-output) C
Isolation test voltage t = 1.0 sec. V
Resistance, input to output R
Current Transfer Ratio
Parameter Test condition Par t Symbol Min Ty p. Max Unit
DC Current Transfer Ratio V
= 10 µABV
I
C
= 10 µABV
I
E
= 10 V, IF = 0 I
V
CE
= 0 C
CE
= 10 mA, IC = 2.5 mA V
I
F
= 5.0 V, IF = 10 mA ILD205T CTR
CE
ILD206T CTR
ILD207T CTR
ILD211T CTR
ILD213T CTR
V
= 5.0 V, IF = 1.0 mA ILD205T CTR
CE
ILD206T CTR
ILD207T CTR
ILD217T CTR
CEO
ECO
CEO
CE
CE(sat)
IO
ISO
IO
Vishay Semiconductors
70 V
7.0 V
5.0 50 nA
10 pF
0.4 V
0.5 pF
3000 V
100 GΩ
DC
DC
DC
DC
DC
DC
DC
DC
DC
40 80 %
63 125 %
100 200 %
20 %
100 %
13 30 %
22 45 %
34 70 %
100 120 %
RMS
Document Number 83647
Rev. 1.4, 26-Oct-04
www.vishay.com
3