VISHAY IL211AT, IL212AT, IL213AT User Manual

IL211AT/ 212AT/ 213AT

i179002

1

2

3

4

A

K

NC

NC

8

7

6

5

NC

B

C

E

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection in
SOIC-8 package

Features

• Isolation Voltage, 3000 V

• Industry Standard SOIC-8A Surface Mountable
Package

• Compatible with Dual Wave, Vapor Phase and IR
Reflow Soldering

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

RMS

e3

Pb

Pb-free

Agency Approvals

• UL1577, File No. E52744 System Code Y

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1

In addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.

A choice of 20, 50, and 100 % minimum CTR at
I

= 10 mA makes these optocouplers suitable for a

F

variety of different applications.

Description

The IL211AT/ IL212AT/ IL213AT are optically cou­pled pairs with a Gallium Arsenide infrared LED and
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the device
while maintaining a high degree of electrical isolation
between input and output. The IL211AT/ IL212AT/
IL213AT comes in a standard SOIC-8 small outline
package for surface mounting which makes it ideally
suited for high density applications with limited space.

Order Information

Part Remarks

IL211AT CTR > 20 %, SOIC-8

IL212AT CTR > 50 %, SOIC-8

IL213AT CTR > 100 %, SOIC-8

Available only on Tape and Reel Option
(Conforms to EIA Standard RS481A)

For additional information on the available options refer to
Option Information.

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Peak reverse voltage V

Forward continuous current I

Power dissipation P

Derate linearly from 25 ° 1.2 mW/°C

Document Number 83615

Rev. 1.5, 26-Oct-04

R

F

diss

6.0 V

60 mA

90 mW

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1

IL211AT/ 212AT/ 213AT

Vishay Semiconductors

Output

Para me ter Test condition Symbol Val ue Unit

Collector-emitter breakdown voltage BV

Emitter-collector breakdown voltage BV

Collector-base breakdown voltage V

I

CMAX DC

I

CMAX

t < 1.0 ms I

Power dissipation P

CEO

ECO

CEO

I

CMAX DC

CMAX

diss

Derate linearly from 25 °C 2.0 mW/°C

Coupler

Parameter Test condition Symbol Value Unit

Total package dissipation (LED + Detector) P

Derate linearly from 25 °C 3.2 mW/°C

Storage temperature T

Operating temperature T

Soldering time at 260 °C 10 sec.

tot

stg

amb

30 V

7.0 V

70 V

50 mA

100 mA

150 mW

240 mW

- 55 to +150 °C

- 55 to +100 °C

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Capacitance V

= 10 mA V

F

= 6.0 V I

R

= 0 C

R

F

R

O

1.3 1.5 V

0.1 100 µA

13 pF

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter breakdown
voltage

Emitter-collector breakdown
voltage

Collector dark current V

Collector-emitter capacitance V

= 10 µABV

I

C

= 10 µABV

I

E

= 10 V I

CE

= 0 C

CE

CEO

ECO

CEO

CE

30 V

7.0 V

5.0 50 nA

10 pF

Coupler

Para me ter Test condition Symbol Min Ty p. Max Unit

Saturation voltage, collector-emitter I

= 10 mA V

F

Isolation test voltage 1 sec. V

Capacitance (input-output) C

Resistance input to output R

Collector-emitter breakdown voltage I

= 10 µABV

C

CEsat

ISO

IO

IO

CEO

3000 V

0.5 50 pF

100 GΩ

30 V

0.4 V

RMS

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2

Document Number 83615

Rev. 1.5, 26-Oct-04

IL211AT/ 212AT/ 213AT

iil211at_03

.1 1 10 100

IF- LED Current - mA

I

CE

- Collector-emitter Current - mA

TA=25°Cı

VCE=0.4V

V

CE

=10V

150

100

50

0

iil211at_04

.1 1 10 100

IF- LED Current - mA

NI

CB

- Normalized I

CB

Normalized to:
VCB=9.3V
IF=1 mA
TA= 25°ıC

100

10

1

.1

Vishay Semiconductors

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

Current Transfer Ratio I

Switching Characteristics

Parameter Test condition Symbol Min Ty p . Max Unit

Switching time I

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

1.4

1.3

1.2

1.1

Ta = -55°C

Ta = 25°C

= 10 mA, VCE = 5.0 V IL211AT CTR 20 50 %

F

IL212AT CTR 50 80 %

IL213AT CTR 100 130 %

= 2 mA, RL = 100 Ω,

C

= 10 V

V

CC

t

, t

on

off

3.0 µs

1.0

- Forward Voltage - V
F

V

iil211at_01

0.9

0.8

0.7

Ta = 100°C

IF- Forward Current - mA

Figure 1. Forward Voltage vs. Forward Current

1.5
Normalized to:

CE

VCE=10 V
IF=10 mA
T

=25°C

A

1.0

- Normalized - CTR

0.5

CE

NCTR

0.0

.1 10 100

iil211at_02

1

IF- LED Current - mA

100101.1

Figure 3. Collector-Emitter Current vs.LED Current

VCE=5V

VCE=0.4V

Figure 2. Normalized Non-saturated and Saturated CTR

Document Number 83615

Rev. 1.5, 26-Oct-04

LED Current

CE

vs.

Figure 4. Normalized Collector-Base Photocurrent vs. LED

Current

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3

IL211AT/ 212AT/ 213AT

iil211at_08

1 1 0 100 1000

0.0

0.5

1.0

1.5

2.0

25°C

50°C

70°C

Ib - Base Current - µA

NHFE(sat) - Normalized

Saturated HFE

Vce = 0.4 V

Ib = 20 µA

Vce=10V

Ta = 25°C

Normalized to:

iil211at_09

100

50

10

5

1.0

Input:

Base-emitter resistance, RBE(Ω)

T

O

F

F

T

O

N

Switching time (µs)

10K 50K 100K 500K 1M

I

F

=10 mA
Pulse width = 100 mS
Duty cycle = 50%

iil211at_10

1000

500

100

50

10

5

1

0.1 0.5 1 5 10 50 100

Input:
IF=10 mA
Pulse width = 100 mS
Duty cycle = 50%

T

OFF

T

O

N

Load resistance RL (KΩ)

Switching time (µS)

Vishay Semiconductors

10

Normalized to:
VCB=9.3V
IF=10 mA

CB

T

= 25°C

A

1

- Normalized I

.1

CB

NI

.01

.1 1 10 100

iil211at_05

IF- LED Current - mA

Figure 5. Normalized Collector-Base Photocurrent vs. LED

Current

1000

TA= 25°C
VCB=9.3V

100

10

1

- Collector-base Current - µA

CB

I

.1

.1 1 10 100

IF- LED Current - mA

iil211at_06

Figure 6. Collector-Base Photocurrent vs. LED Current

5

10

4

10

3

10

2

10

1

10

0

- Collector-emitter - nA

10

-1

10

CEO

I

-2

10

-20 0 20 40 60 80 100

iil211at_07

TA- Ambient Temperature - °C

VCE=10V

Typical

Figure 8. Normalized Saturated HFE vs. Base Current and

Temperature

Figure 9. Typical Switching Characteristics vs. Base Resistance

(Saturated Operation)

Figure 7. Collector-Emitter Leakage Current vs.Temp.

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4

Figure 10. Typical Switching Times vs. Load Resistance

Document Number 83615

Rev. 1.5, 26-Oct-04

INPUT

0

Input

iil211at_11

VCC=5 V

R

L

V

OUT

t

pdon

OUTPUT

10%

50%

90%

t

on

t

t

r

d

0

Figure 11. Switching Test Circuit

Package Dimensions in Inches (mm)

IL211AT/ 212AT/ 213AT

Vishay Semiconductors

t

pdoff

off

t

t

s

r

10%

50%

90%

t

.240

(6.10)

ISO Method A

i178003

.120± .005

(3.05± .13)

Pin One ID

.004 (.10)
.008 (.20)

.192± .005

(4.88± .13)

.050 (1.27)

.021 (.53)

typ.

.154± .005

C

L

(3.91± .13)

.016 (.41)

.050 (1.27)

.015± .002

(.38± .05)

.008 (.20)

.020± .004

(.51± .10)

2 plcs.

R .010 (.13)

.170 (4.32)

.260 (6.6)

40°

5° max.

R.010

(.25) max.

.014 (.36)

.036 (.91)

.045 (1.14)

7°

.058± .005
(1.49± .13)

.125± .005

(3.18± .13)

Lead
Coplanarity

±.0015 (.04)

max.

Document Number 83615

Rev. 1.5, 26-Oct-04

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5

IL211AT/ 212AT/ 213AT

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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6

Document Number 83615

Rev. 1.5, 26-Oct-04

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.