VISHAY IL211AT, IL212AT, IL213AT User Manual

IL211AT/ 212AT/ 213AT

i179002

1

2

3

4

A

K

NC

NC

8

7

6

5

NC

B

C

E

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection in
SOIC-8 package

Features

• Isolation Voltage, 3000 V

• Industry Standard SOIC-8A Surface Mountable
Package

• Compatible with Dual Wave, Vapor Phase and IR
Reflow Soldering

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

RMS

e3

Pb

Pb-free

Agency Approvals

• UL1577, File No. E52744 System Code Y

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1

In addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.

A choice of 20, 50, and 100 % minimum CTR at
I

= 10 mA makes these optocouplers suitable for a

F

variety of different applications.

Description

The IL211AT/ IL212AT/ IL213AT are optically cou­pled pairs with a Gallium Arsenide infrared LED and
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the device
while maintaining a high degree of electrical isolation
between input and output. The IL211AT/ IL212AT/
IL213AT comes in a standard SOIC-8 small outline
package for surface mounting which makes it ideally
suited for high density applications with limited space.

Order Information

Part Remarks

IL211AT CTR > 20 %, SOIC-8

IL212AT CTR > 50 %, SOIC-8

IL213AT CTR > 100 %, SOIC-8

Available only on Tape and Reel Option
(Conforms to EIA Standard RS481A)

For additional information on the available options refer to
Option Information.

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Peak reverse voltage V

Forward continuous current I

Power dissipation P

Derate linearly from 25 ° 1.2 mW/°C

Document Number 83615

Rev. 1.5, 26-Oct-04

R

F

diss

6.0 V

60 mA

90 mW

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IL211AT/ 212AT/ 213AT

Vishay Semiconductors

Output

Para me ter Test condition Symbol Val ue Unit

Collector-emitter breakdown voltage BV

Emitter-collector breakdown voltage BV

Collector-base breakdown voltage V

I

CMAX DC

I

CMAX

t < 1.0 ms I

Power dissipation P

CEO

ECO

CEO

I

CMAX DC

CMAX

diss

Derate linearly from 25 °C 2.0 mW/°C

Coupler

Parameter Test condition Symbol Value Unit

Total package dissipation (LED + Detector) P

Derate linearly from 25 °C 3.2 mW/°C

Storage temperature T

Operating temperature T

Soldering time at 260 °C 10 sec.

tot

stg

amb

30 V

7.0 V

70 V

50 mA

100 mA

150 mW

240 mW

- 55 to +150 °C

- 55 to +100 °C

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Capacitance V

= 10 mA V

F

= 6.0 V I

R

= 0 C

R

F

R

O

1.3 1.5 V

0.1 100 µA

13 pF

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter breakdown
voltage

Emitter-collector breakdown
voltage

Collector dark current V

Collector-emitter capacitance V

= 10 µABV

I

C

= 10 µABV

I

E

= 10 V I

CE

= 0 C

CE

CEO

ECO

CEO

CE

30 V

7.0 V

5.0 50 nA

10 pF

Coupler

Para me ter Test condition Symbol Min Ty p. Max Unit

Saturation voltage, collector-emitter I

= 10 mA V

F

Isolation test voltage 1 sec. V

Capacitance (input-output) C

Resistance input to output R

Collector-emitter breakdown voltage I

= 10 µABV

C

CEsat

ISO

IO

IO

CEO

3000 V

0.5 50 pF

100 GΩ

30 V

0.4 V

RMS

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Document Number 83615

Rev. 1.5, 26-Oct-04

IL211AT/ 212AT/ 213AT

iil211at_03

.1 1 10 100

IF- LED Current - mA

I

CE

- Collector-emitter Current - mA

TA=25°Cı

VCE=0.4V

V

CE

=10V

150

100

50

0

iil211at_04

.1 1 10 100

IF- LED Current - mA

NI

CB

- Normalized I

CB

Normalized to:
VCB=9.3V
IF=1 mA
TA= 25°ıC

100

10

1

.1

Vishay Semiconductors

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

Current Transfer Ratio I

Switching Characteristics

Parameter Test condition Symbol Min Ty p . Max Unit

Switching time I

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

1.4

1.3

1.2

1.1

Ta = -55°C

Ta = 25°C

= 10 mA, VCE = 5.0 V IL211AT CTR 20 50 %

F

IL212AT CTR 50 80 %

IL213AT CTR 100 130 %

= 2 mA, RL = 100 Ω,

C

= 10 V

V

CC

t

, t

on

off

3.0 µs

1.0

- Forward Voltage - V
F

V

iil211at_01

0.9

0.8

0.7

Ta = 100°C

IF- Forward Current - mA

Figure 1. Forward Voltage vs. Forward Current

1.5
Normalized to:

CE

VCE=10 V
IF=10 mA
T

=25°C

A

1.0

- Normalized - CTR

0.5

CE

NCTR

0.0

.1 10 100

iil211at_02

1

IF- LED Current - mA

100101.1

Figure 3. Collector-Emitter Current vs.LED Current

VCE=5V

VCE=0.4V

Figure 2. Normalized Non-saturated and Saturated CTR

Document Number 83615

Rev. 1.5, 26-Oct-04

LED Current

CE

vs.

Figure 4. Normalized Collector-Base Photocurrent vs. LED

Current

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