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ELFA artikelnr
75-352-55 IL205AT Optokopplare
75-352-63 IL207AT Optokopplare
2002-01-04
IL205AT/206AT/207AT/208AT
Phototransistor
Small Outline Surface Mount
Optocoupler
Dimensions in inches (mm)
FEATURES
• High Current Transfer Ratio,
I
=10 mA, V
F
CE
=5.0 V
IL205AT, 40–80%
IL206AT, 63–125%
IL207AT, 100–200%
IL208AT, 160–320%
• High BV
• Isolation Test Voltage, 3000 V
CEO
, 70 V
RMS
, 1 s
• Industry Standard SOIC-8A Surface Mountable Package,
• Standard Lead Spacing, .05"
• Compatible with Dual Wave, Vapor Phase and
IR Reflow Soldering
• Underwriters Lab File #E52744 (Code Letter Y)
V
DE
• VDE 0884 Available with Option 1
DESCRIPTION
The IL205AT/206AT/207AT/208AT are optically coupled pairs with a Gallium Arsenide infrared LED
and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. This family
comes in a standard SOIC-8A small outline package for surface mounting which makes them ideally
suited for high density applications with limited
space. In addition to eliminating through-holes
requirements, this package conforms to standards
for surface mounted devices.
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BV
of 70 volts gives
CEO
a higher safety margin compared to the industrystandard 30 volts.
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
.004 (.10)
.008 (.20)
.021 (.53)
Maximum Ratings, T
.154±.005
C
L
(3.91±.13)
.016 (.41)
.015±.002
.008 (.20)
.050 (1.27)
typ.
=25 ° C (except where noted)
A
.020±.004
(.51±.10)
(.38±.05)
2 plcs.
Anode
Cathode
NC
NC
1
2
3
4
40°
5° max.
R.010
(.25) max.
8
NC
7
Base
6
Collector
5
Emitter
7°
.058±.005
(1.49±.13)
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015 (.04)
max.
Emitter
Peak Reverse Voltage ..........................................................................6.0 V
Continuous Forward Current ............................................................. 60 mA
Power Dissipation at 25 ° C.................................................................90 mW
Derate Linearly from 25 ° C .......................................................... 1.2 mW/ ° C
Detector
Collector-Emitter Breakdown Voltage....................................................70 V
Emitter-Collector Breakdown Voltage...................................................7.0 V
Collector-Base Breakdown Voltage.......................................................70 V
I
CMAX DC
I
CMAX
............................................................................................ 50 mA
(t<1.0 ms).............................................................................. 100 mA
Power Dissipation ...........................................................................150 mW
Derate Linearly from 25 ° C .......................................................... 2.0 mW/ ° C
Package
Total Package Dissipation at 25 ° C Ambient
(LED + Detector)..........................................................................240 mW
Derate Linearly from 25 ° C .......................................................... 3.3 mW/ ° C
Operating Temperature .................................................... –55 ° C to +100 ° C
Storage Temperature........................................................ –55 ° C to +150 ° C
Soldering Time at 260 ° C .......................................................................10 s
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–107 February 24, 2000-17
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