VISHAY IL 207AT VIS Datasheet

PRODUKTINFORMATION

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ELFA artikelnr
75-352-55 IL205AT Optokopplare
75-352-63 IL207AT Optokopplare

2002-01-04



IL205AT/206AT/207AT/208AT

Phototransistor

Small Outline Surface Mount

Optocoupler

Dimensions in inches (mm)

FEATURES

• High Current Transfer Ratio,

I

=10 mA, V

F

CE

=5.0 V
IL205AT, 40–80%
IL206AT, 63–125%
IL207AT, 100–200%
IL208AT, 160–320%

• High BV

• Isolation Test Voltage, 3000 V

CEO

, 70 V

RMS

, 1 s

• Industry Standard SOIC-8A Surface Mount­able Package,

• Standard Lead Spacing, .05"

• Compatible with Dual Wave, Vapor Phase and
IR Reflow Soldering

• Underwriters Lab File #E52744 (Code Letter Y)

V

DE

• VDE 0884 Available with Option 1

DESCRIPTION

The IL205AT/206AT/207AT/208AT are optically cou­pled pairs with a Gallium Arsenide infrared LED
and a silicon NPN phototransistor. Signal informa­tion, including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. This family
comes in a standard SOIC-8A small outline pack­age for surface mounting which makes them ideally
suited for high density applications with limited
space. In addition to eliminating through-holes
requirements, this package conforms to standards
for surface mounted devices.

A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BV

of 70 volts gives

CEO

a higher safety margin compared to the industry­standard 30 volts.

.120±.005

(3.05±.13)

.240

(6.10)

Pin One ID

.192±.005
(4.88±.13)

.004 (.10)
.008 (.20)

.021 (.53)

Maximum Ratings, T

.154±.005

C

L

(3.91±.13)

.016 (.41)

.015±.002

.008 (.20)

.050 (1.27)

typ.

=25 ° C (except where noted)

A

.020±.004

(.51±.10)

(.38±.05)

2 plcs.

Anode

Cathode

NC
NC

1
2
3
4

40°

5° max.

R.010
(.25) max.

8

NC

7

Base

6

Collector

5

Emitter

7°

.058±.005

(1.49±.13)

.125±.005

(3.18±.13)

Lead
Coplanarity
±.0015 (.04)
max.

Emitter

Peak Reverse Voltage ..........................................................................6.0 V

Continuous Forward Current ............................................................. 60 mA

Power Dissipation at 25 ° C.................................................................90 mW

Derate Linearly from 25 ° C .......................................................... 1.2 mW/ ° C

Detector

Collector-Emitter Breakdown Voltage....................................................70 V

Emitter-Collector Breakdown Voltage...................................................7.0 V

Collector-Base Breakdown Voltage.......................................................70 V

I

CMAX DC

I

CMAX

............................................................................................ 50 mA

(t<1.0 ms).............................................................................. 100 mA

Power Dissipation ...........................................................................150 mW

Derate Linearly from 25 ° C .......................................................... 2.0 mW/ ° C

Package

Total Package Dissipation at 25 ° C Ambient

(LED + Detector)..........................................................................240 mW

Derate Linearly from 25 ° C .......................................................... 3.3 mW/ ° C

Operating Temperature .................................................... –55 ° C to +100 ° C

Storage Temperature........................................................ –55 ° C to +150 ° C

Soldering Time at 260 ° C .......................................................................10 s

2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–107 February 24, 2000-17



V

F

d

V

t

V

µ A

=0

Ω

,

µ s

Characteristics, T

=25 ° C

A

Parameter Sym. Min. Typ. Max. Unit Condition

Emitter

Forward Voltage

Reverse Current

Capacitance

V

F

I

R

C

O

— 1.3 1.5 V

— 0.1 100

—13—pF

I

=10 mA

F

=6.0 V

V

R

V

R

Detector

Breakdown Voltage BV

BV

Leakage Current, Collector-Emitter

I

CEO

CEO

ECO

70 — — V

7.0 10 —

— 5.0 50 nA

I

=100 µ A

C

I

=100 µ A

E

=10 V

V

CE

Package

DC
Current
Transfer

IL205AT CTR

DC

40 — 80 %

IL206AT 63 — 125

=10 mA,

I

F

IL207AT 100 — 200

IL208AT 100 — 320

DC
Current
Transfer

IL205AT CTR

DC

13 25 — %

IL206AT 22 40 —

=1.0 mA,

I

F

IL207AT 34 60 —

IL208AT 56 95 —

Saturation Voltage, Collector-Emitter

Isolation Test Voltage

V

CE

sat

V

IO

— — 0.4 —

3000 — — V

RMS

I

=2.0 mA,

C

—

Equivalent DC, Isolation Voltage — 3535 — — VDC —

Capacitance, Input to Output

Resistance, Input to Output

Switching Time

C

IO

R

IO

t

t

ON

OFF

— 0.5 — pF —

— 100 —

— 3.0 —

—

I

=2.0 mA, R

C

V

CE

V

CE

I

=10 mA,

F

=100 Ω ,

L

=5.0 V

=5.0 V

=10 V

V

CC

Figure 1. Forward voltage vs. forward current

Figure 2. Normalized non-saturated and saturated CTR

CE

vs. LED current

1.4

1.3

1.2

age ­o

orwar

-

F

TA = —55

1.1

TA = 25

1.0

0.9
TA = 85

0.8

0.7

.1 1 10 100

°C

°C

°C

IF - Forward Current - mA

1.5

CE

- Normalized - CTR

CE

NCTR

Normalized to:

=10 V

V

CE

I

=10 mA

F

T

=25

°C

A

1.0

0.5

0.0
.1 1 10 100

- LED Current - mA

I

F

V

VCE =0.4

CE

=5

V

V

2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA IL205AT/206AT/207AT/208AT

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–108 February 24, 2000-17



Figure 3. Collector-emitter current vs. LED curren t

150

TA = 25

°C

= 10 V

V

100

CE

VCE = 0.4 V

50

- Collector-emitter Current - mA

CE

I

0

.1 1 10 100

I

- LED Current - mA

F

Figure 4. Normalized collector-base photo current vs. LED

curren t

100

Normalized to:

=9.3 V

V

10

CB

I

=1 mA

F

T

= 25

°C

A

1

CB

- Normalized I

CB

NI

Figure 6. Collector-emitter photo current vs. LED current

1000

TA = 25

°C

VCB=9.3 V

100

10

1

- Collector-base Current - µA

CB

I

.1

.1 1 10 100

IF - LED Current - mA

Figure 7. Collector-emitter photo current vs. LED current

5

10

4

10

3

10

2

10

1

10

0

10

- Collector-emitter - nA

CEO

-1

I

10

VCE=10 V

Typical

.1

.1 1 10 100

I

- LED Current - mA

F

Figure 5. Normalized collector-base photo current vs. LED

current

10

Normalized to:

=9.3 V

V

CB

- Normalized - I

CB

NI

CB

I

=10 mA

F

T

= 25

°C

A

1

.1

.01

.1 1 10 100

I

- LED Current - mA

F

-2

10

-20 0 20 40 60 80 100

TA - Ambient Temperature - °C

Figure 8. Base current vs. I

2.0

FE

1.5

1.0

FE(sat)

NH

0.5

Normalized Saturated H

0.0
.1 10 100 1000

25

°C

50

°C

25

°C

VCE=0.4 V

I

and HFE

F

- Base Current - µA

B

Normalized to:

I

=20 µA

B

V

=10 V

CE

T

= 25

°C

A

2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA IL205AT/206AT/207AT/208AT

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–109 February 24, 2000-17



Figure 9. Typical switching characteristics

vs. base resistance (saturated operation )

100

Input:
IF=10mA

50

Pulse width=100 mS
Duty cycle=50%

F

F

O

T

10

5

T

Switching time (µs)

ON

1.0
10K 50K 100K 500K 1M

Base-emitter resistance, RBE (Ω)

Figure 10. Typical switching times vs. load

resistance

100

Input:
IF=10mA

50

Pulse width=100 mS
Duty cycle=50%

10

F

F

O

T

Figure 11. Switching time test schematic and waveform

Input

Input

VCC=5 V

R

L

V

OUT

t

pdon

Output

10%

50%

90%

t

on

t

d

t

pdoff

t

r

t

s

t

off

t

r

10%

50%

90%

5

T

Switching time (µs)

ON

1.0
10K 50K 100K 500K 1M

Base-emitter resistance, RBE (Ω)

2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA IL205AT/206AT/207AT/208AT

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–110 February 24, 2000-17