Optocoupler, Phototransistor Output, With Base Connection in
SOIC-8 package
Features
• High BV
• Isolation Test Voltage, 3000 V
• Industry Standard SOIC-8A Surface
Mountable Package
• Compatible with Dual Wave, Vapor
Phase and IR Reflow Soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
CEO
, 70 V
RMS
e3
Agency Approvals
• UL1577, File No. E52744 System Code Y
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The IL205AT/ IL206AT/ IL207AT/ IL208AT are optically coupled pairs with a Gallium Arsenide infrared
LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by
the device while maintaining a high degree of electrical isolation between input and output. This family
comes in a standard SOIC-8A small outline package
for surface mounting which makes them ideally suited
for high density application with limited space. In addi-
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the adjacent circuits. The high BV
of 70 V gives a higher
CEO
safety margin compared to the industry standard
30 V.
Order Information
PartRemarks
IL205ATCTR 40 - 80 %, SOIC-8
IL206ATCTR 63 - 125 %, SOIC-8
IL207ATCTR 100 - 200 %, SOIC-8
IL208ATCTR 160 - 320 %, SOIC-8
Available on Tape and Reel only.
For additional information on the available options refer to
Option Information.
tion to eliminating through-hole requirements, this
package conforms to standards for surface mounted
devices.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
ParameterTest conditionSymbolVal ueUnit
Peak reverse voltageV
Forward continuous currentI
Power dissipationP
Derate linearly from 25 °C1.2mW/°C
Document Number 83614
Rev. 1.6, 18-Apr-05
R
F
diss
6.0V
60mA
90mW
www.vishay.com
1
IL205AT/ 206AT/ 207AT/ 208AT
Vishay Semiconductors
Output
Para meterTest conditionSymbolVal ueUnit
Collector-emitter breakdown voltageBV
Emitter-collector breakdown voltageBV
Collector-base breakdown voltageBV
I
CMAX DC
I
CMAX
t < 1.0 msI
Power dissipationP
CEO
ECO
CBO
I
CMAX DC
CMAX
diss
Derate linearly from 25 °C2.0mW/°C
Coupler
Para meterTest conditionSymbolVal ueUnit
Total package dissipation (LED + detector)P
Derate linearly from 25 °C3.3mW/°C
Operating temperatureT
Storage temperatureT
Soldering timeat 260 °C10s
tot
amb
stg
70V
7.0V
70V
50mA
100mA
150mW
240mW
- 55 to + 100°C
- 55 to + 150°C
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
ParameterTest conditionSymbolMinTy p.MaxUnit
Forward voltageI
Reverse currentV
CapacitanceV
= 10 mAV
F
= 6.0 VI
R
= 0 VC
R
F
R
O
1.31.5V
0.1100µA
13pF
Output
ParameterTest conditionSymbolMinTy p.MaxUnit
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-emitter leakage
= 100 µABV
I
C
= 100 µABV
I
E
= 10 VI
V
CE
CEO
ECO
CEO
70V
7.010V
5.050nA
current
Coupler
ParameterTest conditionSymbolMinTy p.MaxUnit
Saturation voltage, collectoremitter
Isolation test voltageV
= 2.0 mA, IF = 10 mAV
I
C
CEsat
ISO
3000V
Equivalent DC, isolation voltage3535VDC
Capacitance (input-output)C
Resistance, input to outputR
IO
IO
0.5pF
100Ω
0.4V
RMS
www.vishay.com
2
Document Number 83614
Rev. 1.6, 18-Apr-05
IL205AT/ 206AT/ 207AT/ 208AT
i205at_03
.1110100
I
F
- LED Current - mA
I
CE
- Collector-emitter Current - mA
VCE=0.4V
V
CE
=10V
150
100
50
0
i205at_04
.1110100
I
F
- LED Current - mA
NI
CB
- Normalized I
CB
Normalized to:
V
CB
=9.3 V
I
F
=1 mA
100
10
1
.1
Vishay Semiconductors
Current Transfer Ratio
ParameterTest conditionPartSymbolMinTy p.MaxUnit
Current Transfer RatioI
Switching Characteristics
ParameterTest conditionSymbolMinTy p .MaxUnit
Switching timeI
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
= 10 mA, VCE = 5.0 VIL205ATCTR4080%
F
IL206ATCTR63125%
IL207ATCTR100200%
IL208ATCTR100320%
= 1.0 mA, VCE = 5.0 VIL205ATCTR1325%
I
F
IL206ATCTR2240%
IL207ATCTR3460%
IL208ATCTR5695%
= 2 mA, RL = 100 Ω,
C
= 10 V
V
CC
t
, t
on
off
3.0µs
- Forward Voltage - V
V
i205at_01
- Normalized - CTR
1.4
1.3
1.2
T
= –55°C
A
1.1
TA= 25°C
1.0
0.9
= 85°C
T
F
A
0.8
0.7
.1110100
IF- Forward Current - mA
Figure 1. Forward Voltage vs. Forward Current
1.5
Normalized to:
V
=10 V
1.0
0.5
CE
=10 mA
I
F
CE
CE
Figure 3. Collector-Emitter Current vs.LED Current
V
=5V
CE
NCTR
0.0
.1110100
i205at_02
Figure 2. Normalized Non-saturated and Saturated CTR
Document Number 83614
Rev. 1.6, 18-Apr-05
IF- LED Current - mA
LED Current
V
CE
=0.4V
CE
vs.
Figure 4. Normalized Collector-Base Photocurrent vs. LED
Current
www.vishay.com
3
IL205AT/ 206AT/ 207AT/ 208AT
i205at_08
.1101001000
I
B
- Base Current - µAˇ
NH
FE(sat)
Normalized Saturated H
FE
VCE=0.4 V
2.0
1.5
1.0
0.5
0.0
50°C
25°C
25°C
Normalized to:
I
B
=20 µA
VCE=10 V
i205at_09
100
50
10
5
1.0
Input:
=10m
Pulse width=100 mS
Duty cycle=50%
Base-emitter resistance, RBE(Ω)
T
O
FF
T
ON
Switching time (µs)
10K50K
100K500K1M
I
F
A
Vishay Semiconductors
10
Normalized to:
=9.3 V
V
CB
I
=10 mA
CB
- Normalized - I
CB
NI
i205at_05
F
1
.1
.01
.1110100
I
- LED Current - mA
F
Figure 5. Normalized Collector-Base Photocurrent vs. LED
Current
1000
VCB=9.3 V
100
10
1
- Collector-base Current - µA
CB
I
.1
.1110100
i205at_06
IF- LED Current - mA
Figure 6. Collector-Emitter Photocurrent vs. LED Current
5
10
4
10
3
10
2
10
1
10
0
10
- Collector-emitter - nA
CEO
-1
I
10
-2
10
-20020406080100
i205at_07
TA- Ambient Temperature - °C
VCE=10 V
Typical
Figure 8. Base Current vs. IF and HFE
Figure 9. Typical Switching Characteristics vs. Base Resistance
(Saturated Operation)
Figure 7. Collector-Emitter Photocurrent vs. LED Current
www.vishay.com
4
Document Number 83614
Rev. 1.6, 18-Apr-05
Input
IL205AT/ 206AT/ 207AT/ 208AT
Vishay Semiconductors
t
on
t
t
r
d
Figure 10. Switching Test Circuit
Input
i205at_11
VCC=5 V
R
L
V
OUT
t
pdon
Output
10%
50%
90%
Package Dimensions in Inches (mm)
.120± .005
.240
(6.10)
ISO Method A
(3.05± .13)
Pin One ID
.192± .005
(4.88± .13)
.004 (.10)
.008 (.20)
.050 (1.27)
.021 (.53)
typ.
.154± .005
C
L
(3.91± .13)
.016 (.41)
t
pdoff
t
s
.050 (1.27)
.015± .002
(.38± .05)
.008 (.20)
.020± .004
(.51± .10)
2 plcs.
t
off
t
r
10%
50%
90%
R .010 (.13)
.170 (4.32)
.260 (6.6)
40°
5° max.
R.010
(.25) max.
.014 (.36)
.036 (.91)
.045 (1.14)
7°
.058± .005
(1.49± .13)
.125± .005
(3.18± .13)
Lead
Coplanarity
±.0015 (.04)
max.
i178003
Document Number 83614
Rev. 1.6, 18-Apr-05
www.vishay.com
5
IL205AT/ 206AT/ 207AT/ 208AT
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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