VISHAY IL205AT, IL206AT, IL207AT, IL208AT User Manual
IL205AT/ 206AT/ 207AT/ 208AT
i179002
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K
NC
NC
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C
E
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection in
SOIC-8 package
Features
• High BV
• Isolation Test Voltage, 3000 V
• Industry Standard SOIC-8A Surface
Mountable Package
• Compatible with Dual Wave, Vapor
Phase and IR Reflow Soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
CEO
, 70 V
RMS
e3
Agency Approvals
• UL1577, File No. E52744 System Code Y
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The IL205AT/ IL206AT/ IL207AT/ IL208AT are optically coupled pairs with a Gallium Arsenide infrared
LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by
the device while maintaining a high degree of electrical isolation between input and output. This family
comes in a standard SOIC-8A small outline package
for surface mounting which makes them ideally suited
for high density application with limited space. In addi-
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the adjacent circuits. The high BV
of 70 V gives a higher
CEO
safety margin compared to the industry standard
30 V.
Order Information
Part Remarks
IL205AT CTR 40 - 80 %, SOIC-8
IL206AT CTR 63 - 125 %, SOIC-8
IL207AT CTR 100 - 200 %, SOIC-8
IL208AT CTR 160 - 320 %, SOIC-8
Available on Tape and Reel only.
For additional information on the available options refer to
Option Information.
tion to eliminating through-hole requirements, this
package conforms to standards for surface mounted
devices.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Peak reverse voltage V
Forward continuous current I
Power dissipation P
Derate linearly from 25 °C 1.2 mW/°C
Document Number 83614
Rev. 1.6, 18-Apr-05
R
F
diss
6.0 V
60 mA
90 mW
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1
IL205AT/ 206AT/ 207AT/ 208AT
Vishay Semiconductors
Output
Para meter Test condition Symbol Val ue Unit
Collector-emitter breakdown voltage BV
Emitter-collector breakdown voltage BV
Collector-base breakdown voltage BV
I
CMAX DC
I
CMAX
t < 1.0 ms I
Power dissipation P
CEO
ECO
CBO
I
CMAX DC
CMAX
diss
Derate linearly from 25 °C 2.0 mW/°C
Coupler
Para meter Test condition Symbol Val ue Unit
Total package dissipation (LED + detector) P
Derate linearly from 25 °C 3.3 mW/°C
Operating temperature T
Storage temperature T
Soldering time at 260 °C 10 s
tot
amb
stg
70 V
7.0 V
70 V
50 mA
100 mA
150 mW
240 mW
- 55 to + 100 °C
- 55 to + 150 °C
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
= 10 mA V
F
= 6.0 V I
R
= 0 V C
R
F
R
O
1.3 1.5 V
0.1 100 µA
13 pF
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-emitter leakage
= 100 µABV
I
C
= 100 µABV
I
E
= 10 V I
V
CE
CEO
ECO
CEO
70 V
7.0 10 V
5.0 50 nA
current
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Saturation voltage, collectoremitter
Isolation test voltage V
= 2.0 mA, IF = 10 mA V
I
C
CEsat
ISO
3000 V
Equivalent DC, isolation voltage 3535 VDC
Capacitance (input-output) C
Resistance, input to output R
IO
IO
0.5 pF
100 Ω
0.4 V
RMS
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2
Document Number 83614
Rev. 1.6, 18-Apr-05
IL205AT/ 206AT/ 207AT/ 208AT
i205at_03
.1 1 10 100
I
F
- LED Current - mA
I
CE
- Collector-emitter Current - mA
VCE=0.4V
V
CE
=10V
150
100
50
0
i205at_04
.1 1 10 100
I
F
- LED Current - mA
NI
CB
- Normalized I
CB
Normalized to:
V
CB
=9.3 V
I
F
=1 mA
100
10
1
.1
Vishay Semiconductors
Current Transfer Ratio
Parameter Test condition Part Symbol Min Ty p. Max Unit
Current Transfer Ratio I
Switching Characteristics
Parameter Test condition Symbol Min Ty p . Max Unit
Switching time I
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
= 10 mA, VCE = 5.0 V IL205AT CTR 40 80 %
F
IL206AT CTR 63 125 %
IL207AT CTR 100 200 %
IL208AT CTR 100 320 %
= 1.0 mA, VCE = 5.0 V IL205AT CTR 13 25 %
I
F
IL206AT CTR 22 40 %
IL207AT CTR 34 60 %
IL208AT CTR 56 95 %
= 2 mA, RL = 100 Ω,
C
= 10 V
V
CC
t
, t
on
off
3.0 µs
- Forward Voltage - V
V
i205at_01
- Normalized - CTR
1.4
1.3
1.2
T
= –55°C
A
1.1
TA= 25°C
1.0
0.9
= 85°C
T
F
A
0.8
0.7
.1 1 10 100
IF- Forward Current - mA
Figure 1. Forward Voltage vs. Forward Current
1.5
Normalized to:
V
=10 V
1.0
0.5
CE
=10 mA
I
F
CE
CE
Figure 3. Collector-Emitter Current vs.LED Current
V
=5V
CE
NCTR
0.0
.1 1 10 100
i205at_02
Figure 2. Normalized Non-saturated and Saturated CTR
Document Number 83614
Rev. 1.6, 18-Apr-05
IF- LED Current - mA
LED Current
V
CE
=0.4V
CE
vs.
Figure 4. Normalized Collector-Base Photocurrent vs. LED
Current
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