Vishay HFA90NH40PBF Data Sheet

HFA90NH40PbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 210 A

HALF-PAK (D-67)

PRODUCT SUMMARY

IF (maximum) 210 A

V

R

at T

I

F(DC)

C

Lug terminal

anode

Base

cathode

400 V

106 A at 100 °C

HEXFRED

FEATURES

• Very low Qrr and t

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced snubbing

DESCRIPTION

HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.

®

rr

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Continuous forward current I

Single pulse forward current I

Non-repetitive avalanche energy E

Maximum power dissipation P

Operating junction and storage
temperature range

T

J

FSM

, T

F

AS

R

TC = 25 °C 210

= 100 °C 106

C

Limited by junction temperature 600

L = 100 µH, duty cycle limited by maximum T

D

TC = 25 °C 329

T

= 100 °C 132

C

Stg

J

400 V

AT

1.4 mJ

W

- 55 to + 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

Junction capacitance C

Series inductance L

V

BR

FM

I

RM

T

S

IR = 100 µA 400 - -

IF = 90 A

I

= 180 A - 1.2 1.67

F

= 90 A, TJ = 125 °C - 0.96 1.23

I

F

TJ = 125 °C, VR = 400 V See fig. 2 - 0.6 2 mA

VR = 200 V See fig. 3 - 180 260 pF

From top of terminal hole to mounting plane - 7.0 - nH

See fig. 1

- 1.06 1.45

V

Document Number: 94044 For technical questions, contact: [e-mail]
Revision: 01-Aug-08 1

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HFA90NH40PbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 210 A

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of recovery current
See fig. 8

dI

t

rr

I

RRM

Q

(rec)M

TJ = 25 °C

T

= 125 °C - 158 240

J

TJ = 25 °C - 9 17

= 90 A

I

T

= 125 °C - 15 30

J

TJ = 25 °C - 420 1100

rr

T

= 125 °C - 1200 3200

J

= 25 °C - 370 -

T

J

/dt

T

= 125 °C - 270 -

J

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Terminal torque

minimum Non-lubricated threads 3 (26.5)

maximum 4 (35.4)

minimum 3.4 (30)

maximum 5 (44.2)

Case style HALF-PAK module

T

, T

J

Stg

DC operation

R

thJC

R

thCS

See fig. 4

Mounting surface, flat, smooth and greased 0.05

- 90 140

- 55 to 150 °C

0.38

30 g

1.06 oz.

(lbf ⋅ in)

ns

A

nC

A/µs

°C/W

N ⋅ m

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Document Number: 94044

2 Revision: 01-Aug-08

T

p(p)

A

HFA90NH40PbF

1000

(A)

F

100

HEXFRED

®

Ultrafast Soft Recovery Diode, 210 A

10000

1000

(μA)

R

0.01

Reverse Current - I

0.001

0.0001

Vishay High Power Products

150°C

100

10

1

0.1

100 200 300 400

Reverse Voltage - VR (V)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage

10000

125°C

25°C

(pF)

10

Instantaneous Forward Current - I

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Forward Voltage Drop - VFM(V)

Tj = 150°C

Tj = 125°C

Tj = 25°C

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

160

140

120

100

80

60

40

20

Max. Allowable Case Temperature (°C)

0

0 50 100 150 200 250

DC Forward Current - I

T

1000

Junction Capacitance - C

100

1 10 100 1000

Fig. 3 - Typical Junction Capacitance vs.

DC

(A)

F(AV)

T = 25°C

J

Reverse Voltage - VR (V)

Reverse Voltage

Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current

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Revision: 01-Aug-08 3

HFA90NH40PbF

Vishay High Power Products

240

200

160

(ns)

rr

t

120

80

40

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt

200A, 125°C

90A, 125°C

40A, 125°C

200A, 25°C

90A, 25°C

40A, 25°C

100 1000

dIF/ dt (A/μs)

HEXFRED

®

Ultrafast Soft Recovery Diode, 210 A

4500

4000

3500

3000

2500

(nC)

rr

2000

Q

1500

1000

500

0

100 1000

Fig. 7 - Typical Stored Charge vs. dI

200A, 125°C

90A, 125°C

40A, 125°C

200A, 25°C

90A, 25°C

dIF/ dt (A/μs)

40A, 25°C

/dt

F

100

200A, 125°C

90A, 125°C

40A, 125°C

(A)

10

RRM

I

1

100 1000

dIF/ dt (A/μs)

Fig. 6- Typical Recovery Current vs. dI

200A, 25°C
90A, 25°C

40A, 25°C

10000

s)

1000

40A, 25°C

dI (rec)M/ dt (A/μ

/dt

F

90A, 25°C

200A, 125°C

90A, 125°C

200A, 25°C

100

100 1000

dIF/ dt (A/μs)

Fig. 8 - Typical dI

40A, 125°C

(rec)M

/dt vs. dIF/dt

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Document Number: 94044

4 Revision: 01-Aug-08

HFA90NH40PbF

HEXFRED

®

Vishay High Power Products

Ultrafast Soft Recovery Diode, 210 A

1

)

thJC

Thermal Response (Z

0.001

D = 0.50

0.33

0.25

0.1

0.17

0.08

0.01

1E-005 0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE
( THERMAL RESPONSE )

t1, Rectangular Pulse Duration (sec)

Fig. 9 - Maximum Thermal Impedance Z

V

= 200 V

R

Characteristics (Per Leg)

thJC

0.01 Ω

L = 70 µH

D.U.T.

dIF/dt

adjust

G

D

IRFP250

S

Fig. 10 - Reverse Recovery Parameter Test Circuit

(3)

t

I

F

rr

t

a

t

b

0

(4)

Q

rr

0.5 I

RRM

(rec)M

Q

(5)

/dt

trr x I

RRM

=

rr

2

RRM

dI

/dt - peak rate of change of

portion of t

b

rr

rr

dIF/dt

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

- peak reverse recovery current

(2) I

RRM

(3) t

- reverse recovery time measured

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

RRM

(2)

I

RRM

(4) Q
and I

(5) dI
current during t

0.75 I

- area under curve defined by t

rr

RRM

(rec)M

Fig. 11 - Reverse Recovery Waveform and Definitions

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Revision: 01-Aug-08 5

HFA90NH40PbF

Vishay High Power Products

L = 100 µH

D.U.T.

= 25 Ω

R

g

Current
monitor

Fig. 12 - Avalanche Test Circuit and Waveforms

ORDERING INFORMATION TABLE

Device code

HFA 90 N H 40 PbF

HEXFRED

®

Ultrafast Soft Recovery Diode, 210 A

I

L(PK)

High-speed

switch

Freewheel

diode

V

d

= 50 V

+

V

(AVAL)

V

R(RATED)

51324

6

Decay

time

1 - HEXFRED® family

2

- Average current rating

3

- N = Not isolated

4

- H = HALF-PAK

5

- Voltage rating (400 V)

6

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95020

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6 Revision: 01-Aug-08

Document Number: 94044

DIMENSIONS in millimeters (inches)

30 ± 0.05

(1.2 ± 0.002)

5 (0.20)
4 (0.16)

13 (0.51)

24.4 (0.96)

5 (0.196) + 45°

Ø 7.3 ± 0.1 (0.29 ± 0.0039)

17.5 (0.69)

16.5 (0.65)

Ø 4.3

- 0.1

0.0

(Ø 0.169 )

- 0.004

0.000

¼" - 20 UNC

40 MAX. (1.58)

21 (0.82)
20 (0.78)

Outline Dimensions

Vishay Semiconductors

D-67 HALF-PAK

Document Number: 95020 For technical questions, contact: [e-mail]
Revision: 20-May-09 1

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