Vishay HFA80FA120P Data Sheet

HFA80FA120P

Vishay Semiconductors

SOT-227

PRODUCT SUMMARY

VR 1200 V

V

(typical) 2.6 V

F

t

(typical) 25 ns

rr

I

at T

F(DC)

C

HEXFRED

®

Ultrafast Soft Recovery Diode, 80 A

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

The dual diode series configuration (HFA80FA120P) is used
for output rectification or freewheeling/clamping operation
and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and

40 A at 78 °C

compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

RMS isolation voltage V

Operating junction and storage
temperature range

T

J

F

FSM

FRM

ISOL

, T

R

TC = 78 °C 40

TJ = 25 °C 400

Rated V

D

TC = 25 °C 178

T

C

Any terminal to case, t = 1 min 2500 V

Stg

square wave, 20 kHz, TC = 60 °C 72

R,

= 100 °C 71

1200 V

ASingle pulse forward current I

W

- 55 to + 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

V

BR

FM

RM

IR = 100 μA 1200 - -

IF = 25 A

I

= 40 A - 2.9 3.3

F

I

= 80 A, TJ = 125 °C - 3.4 -

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 0.5 2 mA

J

VR = 200 V See fig. 3 - 43 - pF

T

See fig. 1

See fig. 2

-2.63.0

-2.0-μA

V

Document Number: 94075 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

, [e-mail], [e-mail] 1

HFA80FA120P

Vishay Semiconductors

HEXFRED

®

Ultrafast Soft Recovery Diode, 80 A

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 25 -

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

= 25 °C

J

T

= 125 °C - 110 -

J

TJ = 25 °C - 5.9 -

T

= 125 °C - 10.8 -

J

TJ = 25 °C - 160 -

rr

T

= 125 °C - 630 -

J

= 40 A

I

F

/dt = - 200 A/μs

dI

F

= 200 V

V

R

-52-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Case to heatsink R

Weight -30- g

Mounting torque -1.3-Nm

R

thJC

thCS

Flat, greased and surface - 0.05 -

--0.7

nsT

A

nC

°C/WJunction to case, both legs conducting - - 0.35

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1

100

10

I

F

- Instantaneous
Forward Current (A)

VF - Forward Voltage Drop (V)

1.0 1.5 2.0 2.5 3.0 3.5

4.0

TJ = 150 °C
T

J

= 125 °C

T

J

= 25 °C

100

10

1000

C

T

- Junction Capacitance (pF)

V

R

- Reverse Voltage (V)

10 100 1000

10 000

1

TJ = 25 °C

0.01

0.001

0.0001

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

10

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

.

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

HFA80FA120P

HEXFRED

®

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 80 A

10

TJ = 150 °C

1

= 125 °C

T

0.1

0.01

- Reverse Current (µA)

0.001

R

I

0.0001

200 400 600 800 1000 12000

V

- Reverse Voltage (V)

R

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

J

= 25 °C

T

J

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

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Revision: 22-Jul-10 [e-mail]

Fig. 4 - Maximum Thermal Impedance Z

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Characteristics

thJC

HFA80FA120P

0

20

40

60

80

100

120

160

140

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

2010 30 40

706050

0

DC

Square wave
(D = 0.50)

See note (1)

0

20

40

60

80

200

100

120

140

160

180

Average Power Loss (W)

I

F(AV)

- Average Forward Current (A)

2010 30 40

50 60

0

RMS limit

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

DC

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Fig. 6 - Forward Power Loss Characteristics

HEXFRED

®

Ultrafast Soft Recovery Diode, 80 A

140

120

100

80

(ns)

rr

t

60

40

20

100

Fig. 7 - Typical Reverse Recovery Time vs. dI

1800

1600

1400

1200

1000

(nC)

rr

800

Q

600

400

200

0

100

Fig. 8 - Typical Stored Charge vs. dI

IF = 40 A, TJ = 125 °C
I

F

IF = 40 A, TJ = 25 °C
I

dIF/dt (A/µs)

IF = 40 A, TJ = 125 °C

= 20 A, TJ = 125 °C

I

F

IF = 40 A, TJ = 25 °C

= 20 A, TJ = 25 °C

I

F

dIF/dt (A/µs)

= 20 A, TJ = 125 °C

= 20 A, TJ = 25 °C

F

1000

/dt

F

1000

/dt

F

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

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x VFM at (I

F(AV)

REV

) x R

;

thJC

/D) (see fig. 6);

F(AV)

R

, [e-mail], [e-mail] Revision: 22-Jul-10

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

HFA80FA120P

HEXFRED

®

Ultrafast Soft Recovery Diode, 80 A

V

= 200 V

R

0.01 Ω

L = 70 μH

D.U.T.

dIF/dt
adjust

G

Fig. 9 - Reverse Recovery Parameter Test Circuit

D

IRFP250

S

Vishay Semiconductors

Document Number: 94075 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

Fig. 10 - Reverse Recovery Waveform and Definitions

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HFA80FA120P

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 80 A

ORDERING INFORMATION TABLE

Device code

1

2

3

4

5

6

CIRCUIT CONFIGURATION

HEXFRED

®

HF A 80 FA 120 P

6

51324

- HEXFRED® family

- Process designator (A = Electron irradiated)

- Average current (80 = 80 A)

- Package outline (FA = SOT-227)

- Voltage rating (120 = 1200 V)

- P = Lead (Pb)-free

1

4

2

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95036

Packaging information www.vishay.com/doc?95037

3

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DIMENSIONS in millimeters (inches)

38.30 (1.508)

37.80 (1.488)

-A-

4

12

3

12.50 (0.492)

7.50 (0.295)

Ø 4.40 (0.173)
Ø 4.20 (0.165)

30.20 (1.189)

29.80 (1.173)

15.00 (0.590)

6.25 (0.246)

25.70 (1.012)

25.20 (0.992)

-B-

R full

Chamfer

2.00 (0.079) x 45°

2.10 (0.082)

1.90 (0.075)

8.10 (0.319)

7.70 (0.303)

4 x

2.10 (0.082)

1.90 (0.075)

-C-

0.12 (0.005)

12.30 (0.484)

11.80 (0.464)

MMM

0.25 (0.010)

CA B

4 x M4 nuts

Outline Dimensions

Vishay Semiconductors

SOT-227

Notes

• Dimensioning and tolerancing per ANSI Y14.5M-1982

• Controlling dimension: millimeter

Document Number: 95036 For technical questions, contact: [e-mail]
Revision: 28-Aug-07 1

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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Revision: 11-Mar-11 1