Vishay HFA80FA120P Data Sheet
HFA80FA120P
Vishay Semiconductors
SOT-227
PRODUCT SUMMARY
VR 1200 V
V
(typical) 2.6 V
F
t
(typical) 25 ns
rr
I
at T
F(DC)
C
HEXFRED
®
Ultrafast Soft Recovery Diode, 80 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (HFA80FA120P) is used
for output rectification or freewheeling/clamping operation
and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
40 A at 78 °C
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
RMS isolation voltage V
Operating junction and storage
temperature range
T
J
F
FSM
FRM
ISOL
, T
R
TC = 78 °C 40
TJ = 25 °C 400
Rated V
D
TC = 25 °C 178
T
C
Any terminal to case, t = 1 min 2500 V
Stg
square wave, 20 kHz, TC = 60 °C 72
R,
= 100 °C 71
1200 V
ASingle pulse forward current I
W
- 55 to + 150 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
V
BR
FM
RM
IR = 100 μA 1200 - -
IF = 25 A
I
= 40 A - 2.9 3.3
F
I
= 80 A, TJ = 125 °C - 3.4 -
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 0.5 2 mA
J
VR = 200 V See fig. 3 - 43 - pF
T
See fig. 1
See fig. 2
-2.63.0
-2.0-μA
V
Document Number: 94075 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
HFA80FA120P
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 80 A
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 25 -
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 110 -
J
TJ = 25 °C - 5.9 -
T
= 125 °C - 10.8 -
J
TJ = 25 °C - 160 -
rr
T
= 125 °C - 630 -
J
= 40 A
I
F
/dt = - 200 A/μs
dI
F
= 200 V
V
R
-52-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsink R
Weight -30- g
Mounting torque -1.3-Nm
R
thJC
thCS
Flat, greased and surface - 0.05 -
--0.7
nsT
A
nC
°C/WJunction to case, both legs conducting - - 0.35
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94075
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10
1
100
10
I
F
- Instantaneous
Forward Current (A)
VF - Forward Voltage Drop (V)
1.0 1.5 2.0 2.5 3.0 3.5
4.0
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
100
10
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10 100 1000
10 000
1
TJ = 25 °C
0.01
0.001
0.0001
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
HFA80FA120P
HEXFRED
®
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 80 A
10
TJ = 150 °C
1
= 125 °C
T
0.1
0.01
- Reverse Current (µA)
0.001
R
I
0.0001
200 400 600 800 1000 12000
V
- Reverse Voltage (V)
R
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
J
= 25 °C
T
J
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94075 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Characteristics
thJC
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