Vishay HFA80FA120P Data Sheet

HFA80FA120P
SOT-227
PRODUCT SUMMARY
VR 1200 V
V
(typical) 2.6 V
F
t
(typical) 25 ns
rr
I
at T
F(DC)
C
HEXFRED
®
Ultrafast Soft Recovery Diode, 80 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (HFA80FA120P) is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and
40 A at 78 °C
compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
RMS isolation voltage V
Operating junction and storage temperature range
T
J
F
FSM
FRM
ISOL
, T
R
TC = 78 °C 40
TJ = 25 °C 400
Rated V
D
TC = 25 °C 178
T
C
Any terminal to case, t = 1 min 2500 V
Stg
square wave, 20 kHz, TC = 60 °C 72
R,
= 100 °C 71
1200 V
ASingle pulse forward current I
W
- 55 to + 150 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
V
BR
FM
RM
IR = 100 μA 1200 - -
IF = 25 A
I
= 40 A - 2.9 3.3
F
I
= 80 A, TJ = 125 °C - 3.4 -
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 0.5 2 mA
J
VR = 200 V See fig. 3 - 43 - pF
T
See fig. 1
See fig. 2
-2.63.0
-2.0-μA
V
Document Number: 94075 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
HFA80FA120P
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 80 A
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 25 -
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 110 -
J
TJ = 25 °C - 5.9 -
T
= 125 °C - 10.8 -
J
TJ = 25 °C - 160 -
rr
T
= 125 °C - 630 -
J
= 40 A
I
F
/dt = - 200 A/μs
dI
F
= 200 V
V
R
-52-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsink R
Weight -30- g
Mounting torque -1.3-Nm
R
thJC
thCS
Flat, greased and surface - 0.05 -
--0.7
nsT
A
nC
°C/WJunction to case, both legs conducting - - 0.35
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94075 2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10
1
100
10
I
F
- Instantaneous Forward Current (A)
VF - Forward Voltage Drop (V)
1.0 1.5 2.0 2.5 3.0 3.5
4.0
TJ = 150 °C T
J
= 125 °C
T
J
= 25 °C
100
10
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10 100 1000
10 000
1
TJ = 25 °C
0.01
0.001
0.0001
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
Single pulse
(thermal resistance)
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
HFA80FA120P
HEXFRED
®
Ultrafast Soft Recovery Diode, 80 A
10
TJ = 150 °C
1
= 125 °C
T
0.1
0.01
- Reverse Current (µA)
0.001
R
I
0.0001
200 400 600 800 1000 12000
V
- Reverse Voltage (V)
R
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
J
= 25 °C
T
J
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94075 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul-10 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Characteristics
thJC
HFA80FA120P
0
20
40
60
80
100
120
160
140
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
2010 30 40
706050
0
DC
Square wave (D = 0.50)
See note (1)
0
20
40
60
80
200
100
120
140
160
180
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
2010 30 40
50 60
0
RMS limit
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50
DC
Vishay Semiconductors
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
HEXFRED
®
Ultrafast Soft Recovery Diode, 80 A
140
120
100
80
(ns)
rr
t
60
40
20
100
Fig. 7 - Typical Reverse Recovery Time vs. dI
1800
1600
1400
1200
1000
(nC)
rr
800
Q
600
400
200
0
100
Fig. 8 - Typical Stored Charge vs. dI
IF = 40 A, TJ = 125 °C I
F
IF = 40 A, TJ = 25 °C I
dIF/dt (A/µs)
IF = 40 A, TJ = 125 °C
= 20 A, TJ = 125 °C
I
F
IF = 40 A, TJ = 25 °C
= 20 A, TJ = 25 °C
I
F
dIF/dt (A/µs)
= 20 A, TJ = 125 °C
= 20 A, TJ = 25 °C
F
1000
/dt
F
1000
/dt
F
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94075 4 DiodesAmericas@vishay.com
x VFM at (I
F(AV)
REV
) x R
;
thJC
/D) (see fig. 6);
F(AV)
R
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dIF/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured from zero crossing point of negative going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
HFA80FA120P
HEXFRED
®
Ultrafast Soft Recovery Diode, 80 A
V
= 200 V
R
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
D
IRFP250
S
Document Number: 94075 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul-10 DiodesAmericas@vishay.com
Fig. 10 - Reverse Recovery Waveform and Definitions
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
HFA80FA120P
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 80 A
ORDERING INFORMATION TABLE
Device code
1
2
3
4
5
6
CIRCUIT CONFIGURATION
HEXFRED
®
HF A 80 FA 120 P
6
51324
- HEXFRED® family
- Process designator (A = Electron irradiated)
- Average current (80 = 80 A)
- Package outline (FA = SOT-227)
- Voltage rating (120 = 1200 V)
- P = Lead (Pb)-free
1
4
2
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95036
Packaging information www.vishay.com/doc?95037
3
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94075 6 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
-A-
4
12
3
12.50 (0.492)
7.50 (0.295)
Ø 4.40 (0.173) Ø 4.20 (0.165)
30.20 (1.189)
29.80 (1.173)
15.00 (0.590)
6.25 (0.246)
25.70 (1.012)
25.20 (0.992)
-B-
R full
Chamfer
2.00 (0.079) x 45°
2.10 (0.082)
1.90 (0.075)
8.10 (0.319)
7.70 (0.303)
4 x
2.10 (0.082)
1.90 (0.075)
-C-
0.12 (0.005)
12.30 (0.484)
11.80 (0.464)
MMM
0.25 (0.010)
CA B
4 x M4 nuts
Outline Dimensions
SOT-227
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
Document Number: 95036 For technical questions, contact: indmodules@vishay.com Revision: 28-Aug-07 1
www.vishay.com
Legal Disclaimer Notice
Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1
Loading...