The dual diode series configuration (HFA80FA120P) is used
for output rectification or freewheeling/clamping operation
and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
40 A at 78 °C
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSMAX.UNITS
Cathode to anode voltageV
Continuous forward currentI
Maximum repetitive forward currentI
Maximum power dissipationP
RMS isolation voltageV
Operating junction and storage
temperature range
T
J
F
FSM
FRM
ISOL
, T
R
TC = 78 °C40
TJ = 25 °C400
Rated V
D
TC = 25 °C178
T
C
Any terminal to case, t = 1 min2500V
Stg
square wave, 20 kHz, TC = 60 °C72
R,
= 100 °C71
1200V
ASingle pulse forward currentI
W
- 55 to + 150°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Forward voltageV
Reverse leakage currentI
Junction capacitanceC
V
BR
FM
RM
IR = 100 μA1200--
IF = 25 A
I
= 40 A-2.93.3
F
I
= 80 A, TJ = 125 °C-3.4-
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated-0.52mA
J
VR = 200 VSee fig. 3-43-pF
T
See fig. 1
See fig. 2
-2.63.0
-2.0-μA
V
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Revision: 22-Jul-10DiodesAmericas@vishay.com
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HFA80FA120P
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 80 A
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V-25-
Reverse recovery timet
Peak recovery currentI
Reverse recovery chargeQ
rr
RRM
= 25 °C
J
T
= 125 °C-110-
J
TJ = 25 °C-5.9-
T
= 125 °C-10.8-
J
TJ = 25 °C-160-
rr
T
= 125 °C-630-
J
= 40 A
I
F
/dt = - 200 A/μs
dI
F
= 200 V
V
R
-52-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsinkR
Weight-30- g
Mounting torque-1.3-Nm
R
thJC
thCS
Flat, greased and surface-0.05-
--0.7
nsT
A
nC
°C/WJunction to case, both legs conducting--0.35
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D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
HFA80FA120P
HEXFRED
®
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 80 A
10
TJ = 150 °C
1
= 125 °C
T
0.1
0.01
- Reverse Current (µA)
0.001
R
I
0.0001
200400600800100012000
V
- Reverse Voltage (V)
R
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
J
= 25 °C
T
J
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
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Revision: 22-Jul-10DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
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Characteristics
thJC
HFA80FA120P
0
20
40
60
80
100
120
160
140
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
20103040
706050
0
DC
Square wave
(D = 0.50)
See note (1)
0
20
40
60
80
200
100
120
140
160
180
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
20103040
5060
0
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
Vishay Semiconductors
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
HEXFRED
®
Ultrafast Soft Recovery Diode, 80 A
140
120
100
80
(ns)
rr
t
60
40
20
100
Fig. 7 - Typical Reverse Recovery Time vs. dI
1800
1600
1400
1200
1000
(nC)
rr
800
Q
600
400
200
0
100
Fig. 8 - Typical Stored Charge vs. dI
IF = 40 A, TJ = 125 °C
I
F
IF = 40 A, TJ = 25 °C
I
dIF/dt (A/µs)
IF = 40 A, TJ = 125 °C
= 20 A, TJ = 125 °C
I
F
IF = 40 A, TJ = 25 °C
= 20 A, TJ = 25 °C
I
F
dIF/dt (A/µs)
= 20 A, TJ = 125 °C
= 20 A, TJ = 25 °C
F
1000
/dt
F
1000
/dt
F
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
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- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
HFA80FA120P
HEXFRED
®
Ultrafast Soft Recovery Diode, 80 A
V
= 200 V
R
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
D
IRFP250
S
Vishay Semiconductors
Document Number: 94075For technical questions within your region, please contact one of the following:www.vishay.com
Revision: 22-Jul-10DiodesAmericas@vishay.com
Fig. 10 - Reverse Recovery Waveform and Definitions
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HFA80FA120P
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 80 A
ORDERING INFORMATION TABLE
Device code
1
2
3
4
5
6
CIRCUIT CONFIGURATION
HEXFRED
®
HFA80FA120P
6
51324
-HEXFRED® family
-Process designator (A = Electron irradiated)
-Average current (80 = 80 A)
-Package outline (FA = SOT-227)
-Voltage rating (120 = 1200 V)
-P = Lead (Pb)-free
1
4
2
LINKS TO RELATED DOCUMENTS
Dimensionswww.vishay.com/doc?95036
Packaging informationwww.vishay.com/doc?95037
3
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including but not limited to the warranty expressed therein.
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