Vishay HFA50PA60CPbF User Manual

HFA50PA60CPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 2 x 25 A

TO-2 47 AC

PRODUCT SUMMARY

V

R

at 25 A at 25 °C 1.7 V

V

F

I

F(AV)

t

(typical) 23 ns

rr

T

(maximum) 150 °C

J

Q

(typical) 112 nC

rr

/dt (typical) at 125 °C 160 A/µs

dI

(rec)M

I

(typical) 4.5 A

RRM

Base

common

cathode

2

13

Anode

1

Common

cathode

2 x 25 A

2

600 V

Anode

2

HEXFRED

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA50PA60C is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A per leg continuous
current, the HFA50PA60C is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA50PA60C is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

®

RRM

rr

Pb-free

Available

RoHS*

COMPLIANT

®

product line features

) and

RRM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current

Single pulse forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94074 For technical questions, contact: [e-mail]
Revision: 25-Jul-08 1

per leg

per device 50

J

I

F

FSM

FRM

, T

R

TC = 100 °C

D

TC = 25 °C 150

T

= 100 °C 60

C

Stg

600 V

25

225

100

W

- 55 to + 150 °C

www.vishay.com

A

HFA50PA60CPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 2 x 25 A

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

dI

dI

rr1

t

rr2

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr

rr1

rr2

Reverse recovery time
See fig. 5, 10

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of fall of recovery
current during t

b

See fig. 8

IR = 100 µA 600 - -

IF = 25 A

I

= 50 A - 1.5 2.0

F

I

= 25 A, TJ = 125 °C - 1.3 1.7

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 600 2000

J

VR = 200 V See fig. 3 - 55 100 pF

T

Measured lead to lead 5 mm from package body - 12 - nH

S

See fig. 1

See fig. 2

-1.31.7

-1.520

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 23 -

TJ = 25 °C

-5075

TJ = 125 °C - 105 160

TJ = 25 °C - 4.5 10

I

TJ = 125 °C - 8.0 15

TJ = 25 °C - 112 375

TJ = 125 °C - 420 1200

= 25 A

F

/dt = 200 A/µs

dI

F

= 200 V

V

R

/dt1 TJ = 25 °C - 250 -

/dt2 TJ = 125 °C - 160 -

V

µA

nst

A

nC

A/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

lead

Junction to case,
single leg conducting

Junction to case,

R

thJC

both legs conducting

Thermal resistance,
junction to ambient

Thermal resistance,
case to heatsink

R

thJA

R

thCS

Weight

Mounting torque

Marking device Case style TO-247AC HFA50PA60C

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2 Revision: 25-Jul-08

0.063" from case (1.6 mm) for 10 s - - 300 °C

- - 0.83

- - 0.42

Typical socket mount - - 40

Mounting surface, flat, smooth and greased - 0.25 -

-6.0- g

-0.21- oz.

6.0

(5.0)

-

12

(10)

Document Number: 94074

K/W

kgf · cm
(lbf · in)

HFA50PA60CPbF

100

HEXFRED

®

Vishay High Power Products

Ultrafast Soft Recovery Diode, 2 x 25 A

10000

T = 150°C

1000

100

10

1

0.1

T = 150°C

J

T = 125°C

J

T = 25°C

10

J

0.01

1000

A

J

T = 125°C

J

T = 25°C

J

0 200 400 600

Reverse Voltage - V (V)

R

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage (Per Leg)

1

0.6 1.0 1.4 1.8 2.2 2.6

Forward Voltage Drop - V (V)

FM

Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous

Forward Current (Per Leg)

1

)

D = 0.50

C
J h t

Z (

0.20

e
s n o p s e

0.10

0.1

R

l a m r e h T

0.05

0.02

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

T = 25°C

J

100

10

1 10 100 1000

Reverse Voltage - V (V)

R

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

(Per Leg)

P

DM

t

1

t

2

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

Fig. 4 - Maximum Thermal Impedance Z

Characteristics (Per Leg)

thJC

Document Number: 94074 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 25-Jul-08 3