Vishay HFA32PA120CPBF Data Sheet
VS-HFA32PA120CPbF
TO-2 47 AC
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 2 x 16 A
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
V
R
at I
V
F
F
t
(typ.) 30 ns
rr
T
max. 150 °C
J
Diode variation Single die
2 x 16 A
1200 V
3.0 V
HEXFRED
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA32PA120CPbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A per leg continuous
current, the VS-HFA32PA120CPbF is especially well suited
for use as the companion diode for IGBTs and MOSFETs. In
addition to ultrafast recovery time, the HEXFRED
line features extremely low values of peak recovery current
(I
RRM
during the t
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA32PA120CPbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
®
and Q
RRM
) and does not exhibit any tendency to “snap-off”
portion of recovery. The HEXFRED features
b
rr
®
product
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current
Single pulse forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94073 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
per leg
per device 32
This document is subject to change without notice.
R
I
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C
TC = 25 °C 151
T
= 100 °C 60
C
Stg
1200 V
16
190
64
°C
- 55 to + 150 W
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A
VS-HFA32PA120CPbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 2 x 16 A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
t
rr1
rr2
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during t
b
See fig. 8
IR = 100 μA 1200 - -
IF = 16 A
I
= 32 A - 3.2 3.93
F
I
= 16 A, TJ = 125 °C - 2.3 2.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 375 2000
J
VR = 200 V See fig. 3 - 27 40 pF
T
Measured lead to lead 5 mm from package
S
body
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 30 -
TJ = 25 °C
TJ = 125 °C - 164 245
TJ = 25 °C - 5.8 10
TJ = 125 °C - 8.3 15
rr1
rr2
TJ = 25 °C - 260 675
TJ = 125 °C - 680 1838
/dt1 TJ = 25 °C - 120 -
/dt2 TJ = 125 °C - 76 -
®
= 16 A
I
F
/dt = 200 A/μs
dI
F
V
= 200 V
R
See fig. 1
See fig. 2
-2.53.0
-0.7520
-8.0-nH
- 90 135
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
R
lead
thJC
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-247AC (JEDEC) HFA32PA120C
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2 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
- - 0.83
Typical socket mount - - 80
Mounting surface, flat, smooth and greased - 0.50 -
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11
This document is subject to change without notice.
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K/W
kgf · cm
(lbf · in)
VS-HFA32PA120CPbF
I
F
- Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
02468
0.1
1
1000
10
94073_01
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (µA)
VR - Reverse Voltage (V)
0 200 400 600 1000800 1200
0.01
0.1
1
10
100
1000
94073_02
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
C
T
- Junction Capacitance (pF)
VR - Reverse Voltage (V)
0 10 100 1000 10 000
1
10
1000
100
94073_03
TJ = 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 10.1 10 100
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
94073_04
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
HEXFRED
Ultrafast Soft Recovery Diode, 2 x 16 A
®
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 3 - Typical Junction Capacitance vs.
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Reverse Voltage
Document Number: 94073 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
This document is subject to change without notice.
thJC
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Characteristics
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