Vishay HFA32PA120CPBF Data Sheet

VS-HFA32PA120CPbF

TO-2 47 AC

Base

common

cathode

Common

cathode

2

2

13

Anode

1

Anode

2

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 2 x 16 A

PRODUCT SUMMARY

Package TO-247AC

I

F(AV)

V

R

at I

V

F

F

t

(typ.) 30 ns

rr

T

max. 150 °C

J

Diode variation Single die

2 x 16 A

1200 V

3.0 V

HEXFRED

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA32PA120CPbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A per leg continuous
current, the VS-HFA32PA120CPbF is especially well suited
for use as the companion diode for IGBTs and MOSFETs. In
addition to ultrafast recovery time, the HEXFRED
line features extremely low values of peak recovery current
(I

RRM

during the t
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA32PA120CPbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

®

and Q

RRM

) and does not exhibit any tendency to “snap-off”

portion of recovery. The HEXFRED features

b

rr

®

product

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current

Single pulse forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

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per leg

per device 32

This document is subject to change without notice.

R

I

F

FSM

FRM

D

, T

J

, [e-mail], [e-mail] 1

TC = 100 °C

TC = 25 °C 151

T

= 100 °C 60

C

Stg

1200 V

16

190

64

°C

- 55 to + 150 W

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A

VS-HFA32PA120CPbF

Vishay Semiconductors

HEXFRED

Ultrafast Soft Recovery Diode, 2 x 16 A

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

dI

dI

t

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

t

rr1

rr2

Reverse recovery time
See fig. 5, 10

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of fall of recovery
current during t

b

See fig. 8

IR = 100 μA 1200 - -

IF = 16 A

I

= 32 A - 3.2 3.93

F

I

= 16 A, TJ = 125 °C - 2.3 2.7

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 375 2000

J

VR = 200 V See fig. 3 - 27 40 pF

T

Measured lead to lead 5 mm from package

S

body

rr

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 30 -

TJ = 25 °C

TJ = 125 °C - 164 245

TJ = 25 °C - 5.8 10

TJ = 125 °C - 8.3 15

rr1

rr2

TJ = 25 °C - 260 675

TJ = 125 °C - 680 1838

/dt1 TJ = 25 °C - 120 -

/dt2 TJ = 125 °C - 76 -

®

= 16 A

I

F

/dt = 200 A/μs

dI

F

V

= 200 V

R

See fig. 1

See fig. 2

-2.53.0

-0.7520

-8.0-nH

- 90 135

V

μA

nst

A

nC

A/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

Thermal resistance,
case to heatsink

R

R

R

lead

thJC

thJA

thCS

Weight

Mounting torque

Marking device Case style TO-247AC (JEDEC) HFA32PA120C

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0.063" from case (1.6 mm) for 10 s - - 300 °C

- - 0.83

Typical socket mount - - 80

Mounting surface, flat, smooth and greased - 0.50 -

-2.0- g

-0.07- oz.

6.0

(5.0)

-

12

(10)

, [e-mail], [e-mail] Revision: 23-May-11

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K/W

kgf · cm

(lbf · in)

VS-HFA32PA120CPbF

I

F

- Instantaneous Forward Current (A)

VFM - Forward Voltage Drop (V)

02468

0.1

1

1000

10

94073_01

TJ = 150 °C
T

J

= 125 °C

T

J

= 25 °C

I

R

- Reverse Current (µA)

VR - Reverse Voltage (V)

0 200 400 600 1000800 1200

0.01

0.1

1

10

100

1000

94073_02

TJ = 125 °C

TJ = 150 °C

TJ = 25 °C

C

T

- Junction Capacitance (pF)

VR - Reverse Voltage (V)

0 10 100 1000 10 000

1

10

1000

100

94073_03

TJ = 25 °C

0.01

0.1

1

0.00001 0.0001 0.001 0.01 10.1 10 100

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Response

94073_04

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

P

DM

t

2

t

1

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

HEXFRED

Ultrafast Soft Recovery Diode, 2 x 16 A

®

Vishay Semiconductors

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

Fig. 3 - Typical Junction Capacitance vs.

Fig. 2 - Typical Reverse Current vs. Reverse Voltage

Reverse Voltage

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Revision: 23-May-11 [e-mail]

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Fig. 4 - Maximum Thermal Impedance Z

This document is subject to change without notice.

thJC

, [e-mail], [e-mail] 3

Characteristics

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VS-HFA32PA120CPbF

t

rr

(ns)

dIF/dt (A/µs)

100 1000

20

270

220

70

120

170

94073_05

VR = 200 V
T

J

= 125 °C

T

J

= 25 °C

IF = 16 A
I

F

= 8 A

I

rr

(A)

dIF/dt (A/µs)

100 1000

0

30

20

25

5

10

15

94073_06

VR = 200 V
T

J

= 125 °C

T

J

= 25 °C

IF = 16 A
I

F

= 8 A

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 2 x 16 A

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)

HEXFRED

®

1600

VR = 200 V

= 125 °C

T

1400

1200

1000

(nC)

rr

Q

94073_07

J

= 25 °C

T

J

IF = 16 A
I

= 8 A

F

800

600

400

200

0

100 1000

dIF/dt (A/µs)

Fig. 7 - Typical Stored Charge vs. dI

/dt (Per Leg)

F

Fig. 6 - Typical Recovery Current vs. dI

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10 000

1000

/dt (A/µs)

(rec)M

100

dI

10

100 1000

94073_08

/dt (Per Leg)

F

Fig. 8 - Typical dI

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VR = 200 V

= 125 °C

T

J

= 25 °C

T

J

IF = 16 A
I

F

= 8 A

dIF/dt (A/µs)

/dt vs. dIF/dt (Per Leg)

(rec)M

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VS-HFA32PA120CPbF

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

V

= 200 V

R

®

0.01 Ω

D.U.T.

HEXFRED

Ultrafast Soft Recovery Diode, 2 x 16 A

L = 70 μH

Vishay Semiconductors

dIF/dt

adjust

G

D

IRFP250

S

Fig. 9 - Reverse Recovery Parameter Test Circuit

Document Number: 94073 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 [e-mail]

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Fig. 10 - Reverse Recovery Waveform and Definitions

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VS-HFA32PA120CPbF

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 2 x 16 A

ORDERING INFORMATION TABLE

HEXFRED

®

Device code

1 - Vishay Semiconductors product

2

3

4

5

6

7

8

Dimensions www.vishay.com/doc?95223

Part marking information www.vishay.com/doc?95226

HFVS- A 32 PA 120 C PbF

51 32 4 6 7 8

- HEXFRED® family

- Electron irradiated

- Current rating (32 = 32 A)

- PA = TO-247AC

- Voltage rating: (120 = 1200 V)

-

Circuit configuration

C = Common cathode

-

PbF = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

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0.10 AC

M M

E

N

(2)

(3)

(4)

(4)

(2) R/2

B

2 x R

S

D

See view B

2 x e

b4

3 x b

2 x b2

L

C

(5) L1

1

2

3

Q

D

A

A2

A

A

A1

C

Ø K BD

M M

A

(6)

Ø P

(Datum B)

FP1

D1 (4)

4

E1

0.01 BD

M M

View A - A

Thermal pad

D2

DDE E

C

C

View B

(b1, b3, b5)

Base metal

c1

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

Lead assignments

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay Semiconductors

SYMBOL

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 FK 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144

c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

(3)

(4)

(5)

(6)

(7)

Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at

the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c

Revision: 16-Jun-11

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1

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Document Number: 95223

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