Vishay HFA320NJ40CPBF Data Sheet

HFA320NJ40CPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 320 A

TO-2 44

PRODUCT SUMMARY

I

F(AV)

V

R

at T

I

F(DC)

C

Lug
terminal
anode 1

Base common

cathode

320 A

400 V

255 A at 85 °C

HEXFRED

Lug
terminal
anode 2

®

FEATURES

• Very low Qrr and t

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced snubbing

DESCRIPTION

HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.

rr

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current I

Single pulse forward current I

Non-repetitive avalanche energy E

Maximum power dissipation P

Operating junction and storage
temperature range

T

J

F

FSM

AS

, T

R

TC = 25 °C 420

= 85 °C 255

T

C

T

= 115 °C 160

C

Limited by junction temperature 1200

L = 100 µH, duty cycle limited by maximum T

D

TC = 25 °C 625

T

= 100 °C 250

C

Stg

J

400 V

A

1.4 mJ

W

- 55 to 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

Junction capacitance C

Series inductance L

V

BR

FM

I

RM

T

S

IR = 100 µA 400 - -

IF = 160 A

I

= 320 A - 1.30 1.54

F

I

= 160 A, TJ = 125 °C - 1.00 1.20

F

TJ = 125 °C, VR = 400 V See fig. 2 - 0.9 3 mA

VR = 200 V See fig. 3 - 370 500 pF

From top of terminal hole to mounting plane - 5.0 - nH

See fig. 1

- 1.10 1.35

V

Document Number: 94072 For technical questions, contact: [e-mail]
Revision: 01-Aug-08 1

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HFA320NJ40CPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 320 A

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of recovery current
See fig. 8

dI

t

rr

I

RRM

Q

(rec)M

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Thermal resistance, junction to case

Typical thermal resistance, case to heatsink R

Weight

Mounting torque

Terminal torque 30 (3.4) - 40 (4.6)

Vertical pull --80

2" lever pull --35

Note

(1)

Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 to 10 lbf ⋅ in steps until desired or maximum torque limits are reached.

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 45 -

= 25 °C

J

T

= 125 °C - 290 440

J

- 90 140

TJ = 25 °C - 8.7 20

= 160 A

I

T

= 125 °C - 18 30

J

TJ = 25 °C - 420 1100

rr

T

= 125 °C - 2600 7000

J

= 25 °C - 300 -

T

J

/dt

T

= 125 °C - 280 -

J

per leg

per module - - 0.095

F

dI

/dt = 200 A/µs

F

V

= 200 V

R

, T

J

Stg

R

thJC

thCS

- 55 - 150 °C

- - 0.19

-0.10-

-68- g

-2.4-oz.

(1)

30 (3.4) - 40 (4.6)

center hole 12 (1.4) - 18 (2.1)

°C/W

K/W

N ⋅ m

(lbf ⋅ in)

lbf ⋅ in

nsT

A

nC

A/µs

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Document Number: 94072

2 Revision: 01-Aug-08

HFA320NJ40CPbF

1000

100

10

1

- Instantaneous Forward Current (A)

F

I

0.2 1.80.8

0.4 1.4

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current (Per Leg)

10 000

1000

100

10

- Reverse Current (µA)

1

R

I

0.1

100

Fig. 2 - Typical Reverse Current vs.

Ultrafast Soft Recovery

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

0.6 1.0 1.61.2

VFM - Forward Voltage Drop (V)

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

200

VR - Reverse Voltage (V)

Reverse Voltage (Per Leg)

300

HEXFRED

®

Diode, 320 A

400

Vishay High Power Products

160

140

120

100

80

60

Case Temperature (°C)

40

20

0

0 100 300 500

I

F(AV)

200 400

- DC Forward Current (A)

Maximum Allowable

Fig. 4 - Maximum Allowable Case Temperature vs. DC

Forward Current (Per Leg)

400

350

300

250

200

(ns)

rr

t

150

100

50

0

100

dIF/dt (A/µs)

Fig. 5 - Typical Reverse Recovery Time vs. dI

DC

TJ = 125 °C
TJ = 25 °C

IF = 200 A

= 160 A

I

F

= 70 A

I

F

/dt (Per Leg)

F

1000

10 000

1000

- Junction Capacitance (pF)

T

C

100

1 10 100 1000

TJ = 25 °C

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

80

TJ = 125 °C

70

TJ = 25 °C

60

IF = 200 A

50

= 160 A

I

(A)

RRM

I

F

= 70 A

I

F

40

30

20

10

0

100

dIF/dt (A/µs)

Fig. 6 - Typical Recovery Current vs. dI

1000

/dt (Per Leg)

F

(Per Leg)

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Revision: 01-Aug-08 3

HFA320NJ40CPbF

Vishay High Power Products

7000

TJ = 125 °C
TJ = 25 °C

6000

(nC)

rr

Q

5000

4000

3000

2000

1000

IF = 200 A

= 160 A

I

F

= 70 A

I

F

0

100

dIF/dt (A/µs)

Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) Fig. 8 - Typical dI

1

HEXFRED

®

Ultrafast Soft Recovery

Diode, 320 A

10 000

1000

/dt (A/µs)

(rec)M

dI

1000

100

100

200 A
160 A
70 A

TJ = 125 °C
TJ = 25 °C

dIF/dt (A/µs)

/dt vs. dIF/dt (Per Leg)

(rec)M

1000

0.1

D = 0.50

0.01

- Thermal Response

thJC

Z

0.001

0.00001 0.0001 0.001 0.01 0.1

Single pulse

(thermal response)

D = 0.33
D = 0.25
D = 0.17
D = 0.08

t1 - Rectangular Pulse Duration (s)

Fig. 9 - Maximum Thermal Impedance Z

Characteristics (Per Leg)

thJC

1

10

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Document Number: 94072

4 Revision: 01-Aug-08

HFA320NJ40CPbF

HEXFRED

Ultrafast Soft Recovery

Diode, 320 A

L = 70 µH

dIF/dt

adjust

Fig. 10 - Reverse Recovery Parameter Test Circuit

I

F

0

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

- peak reverse recovery current

(2) I

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

Fig. 11 - Reverse Recovery Waveform and Definitions

dIF/dt

RRM

G

V

= 200 V

R

®

Vishay High Power Products

0.01 Ω

D.U.T.

D

IRFP250

S

(3)

t

rr

t

a

(2)

I

RRM

t

b

(4)

Q

rr

0.5 I

RRM

dI

/dt

(rec)M

0.75 I

RRM

(4) Q

- area under curve defined by t

rr

and I

RRM

trr x I

(5) dI
current during t

=

Q

rr

/dt - peak rate of change of

(rec)M

portion of t

b

(5)

rr

RRM

2

rr

L = 100 µH

I

L(PK)

High-speed

D.U.T.

Current
monitor

R

g

= 25 Ω

switch

Freewheel

diode

V

d

= 50 V

+

Decay

time

V

(AVAL)

V

R(RATED)

Fig. 12 - Avalanche Test Circuit and Waveforms

Document Number: 94072 For technical questions, contact: [e-mail]

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Revision: 01-Aug-08 5

HFA320NJ40CPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 320 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95021

HFA 320 NJ 40 C PbF

51324

6

- HEXFRED® family, electron irradiated

1

2 - Average current rating

3 - NJ = TO-244

4

- Voltage rating (400 V)

5

- C = Common cathode

6

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

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Document Number: 94072

DIMENSIONS in millimeters (inches)

3

2

3

1

Ø 5.2 (Ø 0.20)

9.6 (0.37) MIN.

93 (3.66) MAX.

¼" - 20 UNC

80 (3.15)

13 (0.51)

35 (1.37) REF.

7 (0.27)
6 (0.23)

17.5 (0.69)

16.5 (0.65)

21 (0.82)
20 (0.78)

Ø 7.2 (Ø 0.28)

(2 places)

12.6 (0.5)

Outline Dimensions

Vishay Semiconductors

TO-244

Document Number: 95021 For technical questions, contact: [e-mail]
Revision: 25-Jun-07 1

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