Vishay HFA320NJ40CPBF Data Sheet

HFA320NJ40CPbF
Ultrafast Soft Recovery Diode, 320 A
TO-2 44
PRODUCT SUMMARY
I
F(AV)
V
R
at T
I
F(DC)
C
Lug terminal anode 1
Base common
cathode
320 A
400 V
255 A at 85 °C
HEXFRED
Lug terminal anode 2
®
FEATURES
• Very low Qrr and t
• Lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION
HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dI/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
rr
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current I
Single pulse forward current I
Non-repetitive avalanche energy E
Maximum power dissipation P
Operating junction and storage temperature range
T
J
F
FSM
AS
, T
R
TC = 25 °C 420
= 85 °C 255
T
C
T
= 115 °C 160
C
Limited by junction temperature 1200
L = 100 µH, duty cycle limited by maximum T
D
TC = 25 °C 625
T
= 100 °C 250
C
Stg
J
400 V
A
1.4 mJ
W
- 55 to 150 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage
Maximum forward voltage V
Maximum reverse leakage current
Junction capacitance C
Series inductance L
V
BR
FM
I
RM
T
S
IR = 100 µA 400 - -
IF = 160 A
I
= 320 A - 1.30 1.54
F
I
= 160 A, TJ = 125 °C - 1.00 1.20
F
TJ = 125 °C, VR = 400 V See fig. 2 - 0.9 3 mA
VR = 200 V See fig. 3 - 370 500 pF
From top of terminal hole to mounting plane - 5.0 - nH
See fig. 1
- 1.10 1.35
V
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HFA320NJ40CPbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery
Diode, 320 A
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time See fig. 5
Peak recovery current See fig. 6
Reverse recovery charge See fig. 7
Peak rate of recovery current See fig. 8
dI
t
rr
I
RRM
Q
(rec)M
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
Thermal resistance, junction to case
Typical thermal resistance, case to heatsink R
Weight
Mounting torque
Terminal torque 30 (3.4) - 40 (4.6)
Vertical pull --80
2" lever pull --35
Note
(1)
Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface. Gradually tighten each mounting bolt in 5 to 10 lbf in steps until desired or maximum torque limits are reached.
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 45 -
= 25 °C
J
T
= 125 °C - 290 440
J
- 90 140
TJ = 25 °C - 8.7 20
= 160 A
I
T
= 125 °C - 18 30
J
TJ = 25 °C - 420 1100
rr
T
= 125 °C - 2600 7000
J
= 25 °C - 300 -
T
J
/dt
T
= 125 °C - 280 -
J
per leg
per module - - 0.095
F
dI
/dt = 200 A/µs
F
V
= 200 V
R
, T
J
Stg
R
thJC
thCS
- 55 - 150 °C
- - 0.19
-0.10-
-68- g
-2.4-oz.
(1)
30 (3.4) - 40 (4.6)
center hole 12 (1.4) - 18 (2.1)
°C/W
K/W
N m
(lbf in)
lbf in
nsT
A
nC
A/µs
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Document Number: 94072
2 Revision: 01-Aug-08
HFA320NJ40CPbF
1000
100
10
1
- Instantaneous Forward Current (A)
F
I
0.2 1.80.8
0.4 1.4
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
10 000
1000
100
10
- Reverse Current (µA)
1
R
I
0.1
100
Fig. 2 - Typical Reverse Current vs.
Ultrafast Soft Recovery
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
J
0.6 1.0 1.61.2
VFM - Forward Voltage Drop (V)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
200
VR - Reverse Voltage (V)
Reverse Voltage (Per Leg)
300
HEXFRED
®
Diode, 320 A
400
Vishay High Power Products
160
140
120
100
80
60
Case Temperature (°C)
40
20
0
0 100 300 500
I
F(AV)
200 400
- DC Forward Current (A)
Maximum Allowable
Fig. 4 - Maximum Allowable Case Temperature vs. DC
Forward Current (Per Leg)
400
350
300
250
200
(ns)
rr
t
150
100
50
0
100
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
DC
TJ = 125 °C TJ = 25 °C
IF = 200 A
= 160 A
I
F
= 70 A
I
F
/dt (Per Leg)
F
1000
10 000
1000
- Junction Capacitance (pF)
T
C
100
1 10 100 1000
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
80
TJ = 125 °C
70
TJ = 25 °C
60
IF = 200 A
50
= 160 A
I
(A)
RRM
I
F
= 70 A
I
F
40
30
20
10
0
100
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
1000
/dt (Per Leg)
F
(Per Leg)
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Revision: 01-Aug-08 3
HFA320NJ40CPbF
Vishay High Power Products
7000
TJ = 125 °C TJ = 25 °C
6000
(nC)
rr
Q
5000
4000
3000
2000
1000
IF = 200 A
= 160 A
I
F
= 70 A
I
F
0
100
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) Fig. 8 - Typical dI
1
HEXFRED
®
Ultrafast Soft Recovery
Diode, 320 A
10 000
1000
/dt (A/µs)
(rec)M
dI
1000
100
100
200 A 160 A 70 A
TJ = 125 °C TJ = 25 °C
dIF/dt (A/µs)
/dt vs. dIF/dt (Per Leg)
(rec)M
1000
0.1
D = 0.50
0.01
- Thermal Response
thJC
Z
0.001
0.00001 0.0001 0.001 0.01 0.1
Single pulse
(thermal response)
D = 0.33 D = 0.25 D = 0.17 D = 0.08
t1 - Rectangular Pulse Duration (s)
Fig. 9 - Maximum Thermal Impedance Z
Characteristics (Per Leg)
thJC
1
10
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Document Number: 94072
4 Revision: 01-Aug-08
HFA320NJ40CPbF
HEXFRED
Ultrafast Soft Recovery
Diode, 320 A
L = 70 µH
dIF/dt
adjust
Fig. 10 - Reverse Recovery Parameter Test Circuit
I
F
0
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
- peak reverse recovery current
(2) I
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative going I through 0.75 I extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
Fig. 11 - Reverse Recovery Waveform and Definitions
dIF/dt
RRM
G
V
= 200 V
R
®
Vishay High Power Products
0.01 Ω
D.U.T.
D
IRFP250
S
(3)
t
rr
t
a
(2)
I
RRM
t
b
(4)
Q
rr
0.5 I
RRM
dI
/dt
(rec)M
0.75 I
RRM
(4) Q
- area under curve defined by t
rr
and I
RRM
trr x I
(5) dI current during t
=
Q
rr
/dt - peak rate of change of
(rec)M
portion of t
b
(5)
rr
RRM
2
rr
L = 100 µH
I
L(PK)
High-speed
D.U.T.
Current monitor
R
g
= 25 Ω
switch
Freewheel
diode
V
d
= 50 V
+
Decay
time
V
(AVAL)
V
R(RATED)
Fig. 12 - Avalanche Test Circuit and Waveforms
Document Number: 94072 For technical questions, contact: ind-modules@vishay.com
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Revision: 01-Aug-08 5
HFA320NJ40CPbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery
Diode, 320 A
ORDERING INFORMATION TABLE
Device code
Dimensions http://www.vishay.com/doc?95021
HFA 320 NJ 40 C PbF
51324
6
- HEXFRED® family, electron irradiated
1
2 - Average current rating
3 - NJ = TO-244
4
- Voltage rating (400 V)
5
- C = Common cathode
6
- Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
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Document Number: 94072
DIMENSIONS in millimeters (inches)
3
2
3
1
Ø 5.2 (Ø 0.20)
9.6 (0.37) MIN.
93 (3.66) MAX.
¼" - 20 UNC
80 (3.15)
13 (0.51)
35 (1.37) REF.
7 (0.27) 6 (0.23)
17.5 (0.69)
16.5 (0.65)
21 (0.82) 20 (0.78)
Ø 7.2 (Ø 0.28)
(2 places)
12.6 (0.5)
Outline Dimensions
Vishay Semiconductors
TO-244
Document Number: 95021 For technical questions, contact: indmodules@vishay.com Revision: 25-Jun-07 1
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