Vishay HFA320NJ40CPBF Data Sheet

HFA320NJ40CPbF

Vishay High Power Products

HEXFRED®

Ultrafast Soft Recovery Diode, 320 A

Lug

Lug

terminal

terminal

anode 1

anode 2

Base common cathode

TO-244

PRODUCT SUMMARY

IF(AV)

320 A

VR

400 V

IF(DC) at TC

255 A at 85 °C

FEATURES

• Very low Qrr and trr

 

Lead (Pb)-free

 

Designed and qualified for industrial level

RoHS

 

 

COMPLIANT

BENEFITS

Reduced RFI and EMI

Reduced snubbing

DESCRIPTION

HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dI/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.

ABSOLUTE MAXIMUM RATINGS

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

TEST CONDITIONS

 

MAX.

UNITS

 

 

 

 

 

 

 

 

 

 

Cathode to anode voltage

VR

 

 

 

400

 

V

 

 

TC = 25 °C

 

 

420

 

 

 

Continuous forward current

IF

TC = 85 °C

 

 

255

 

A

 

 

TC = 115 °C

 

 

160

 

 

 

 

 

 

 

 

Single pulse forward current

IFSM

Limited by junction temperature

 

 

1200

 

 

 

Non-repetitive avalanche energy

EAS

L = 100 µH, duty cycle limited by maximum TJ

 

1.4

 

mJ

Maximum power dissipation

PD

TC = 25 °C

 

 

625

 

W

TC = 100 °C

 

 

250

 

 

 

 

 

 

 

 

Operating junction and storage

TJ, TStg

 

 

- 55 to 150

 

°C

temperature range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

 

 

 

 

 

 

PARAMETER

SYMBOL

TEST CONDITIONS

 

MIN.

 

TYP.

MAX.

 

UNITS

 

 

 

 

 

 

 

 

 

 

Cathode to anode

VBR

IR = 100 µA

 

400

 

-

-

 

 

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IF = 160 A

 

-

 

1.10

1.35

 

V

Maximum forward voltage

VFM

IF = 320 A

See fig. 1

-

 

1.30

1.54

 

 

 

 

IF = 160 A, TJ = 125 °C

 

-

 

1.00

1.20

 

 

Maximum reverse

IRM

TJ = 125 °C, VR = 400 V

See fig. 2

-

 

0.9

3

 

mA

leakage current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Junction capacitance

CT

VR = 200 V

See fig. 3

-

 

370

500

 

pF

Series inductance

LS

From top of terminal hole to mounting plane

-

 

5.0

-

 

nH

 

 

 

 

 

 

 

 

 

 

Document Number: 94072

For technical questions, contact: ind-modules@vishay.com

 

 

 

www.vishay.com

Revision: 01-Aug-08

 

 

 

 

 

 

 

1

HFA320NJ40CPbF

Vishay High Power Products

HEXFRED®

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Ultrafast Soft Recovery

 

 

 

 

 

 

 

 

 

 

 

 

 

Diode, 320 A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

 

 

 

PARAMETER

SYMBOL

 

TEST CONDITIONS

 

 

MIN.

 

TYP.

 

MAX.

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse recovery time

 

 

 

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V

 

-

 

45

 

-

 

 

trr

 

TJ = 25 °C

 

 

 

 

 

-

 

90

 

140

 

ns

See fig. 5

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 125 °C

 

 

 

 

 

-

 

290

 

440

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Peak recovery current

IRRM

 

TJ = 25 °C

 

IF = 160 A

 

 

-

 

8.7

 

20

 

A

See fig. 6

 

TJ = 125 °C

 

 

 

-

 

18

 

30

 

 

 

 

 

dIF/dt = 200 A/µs

 

 

 

 

 

Reverse recovery charge

 

 

 

TJ = 25 °C

 

 

-

 

420

 

1100

 

 

Qrr

 

 

VR = 200 V

 

 

 

 

 

nC

See fig. 7

 

TJ = 125 °C

 

 

 

-

 

2600

 

7000

 

 

 

 

 

 

 

 

 

 

 

 

 

Peak rate of recovery current

dI(rec)M/dt

 

TJ = 25 °C

 

 

 

 

 

-

 

300

 

-

 

A/µs

See fig. 8

 

TJ = 125 °C

 

 

 

 

 

-

 

280

 

-

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL - MECHANICAL SPECIFICATIONS

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

 

 

 

SYMBOL

 

MIN.

 

TYP.

 

MAX.

 

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum junction and storage temperature range

TJ, TStg

 

- 55

 

 

-

 

 

150

 

°C

Thermal resistance, junction to case

 

 

per leg

 

RthJC

 

-

 

 

-

 

 

0.19

 

°C/W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

per module

 

 

-

 

 

-

 

 

0.095

 

 

 

 

 

 

 

 

 

 

 

 

 

K/W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical thermal resistance, case to heatsink

 

 

RthCS

 

-

 

 

0.10

 

-

 

 

 

 

 

 

 

 

 

 

 

Weight

 

 

 

 

 

 

 

-

 

 

68

 

-

 

 

g

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-

 

 

2.4

 

-

 

 

oz.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mounting torque

 

 

 

(1)

 

 

 

30 (3.4)

 

-

 

 

40 (4.6)

 

N m

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

center hole

 

 

 

12 (1.4)

 

-

 

 

18 (2.1)

 

 

 

 

 

 

 

 

 

 

 

 

(lbf in)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Terminal torque

 

 

 

 

 

 

 

30 (3.4)

 

-

 

 

40 (4.6)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vertical pull

 

 

 

 

 

 

 

-

 

 

-

 

 

80

 

 

lbf in

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2" lever pull

 

 

 

 

 

 

 

-

 

 

-

 

 

35

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note

(1)Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface. Gradually tighten each mounting bolt in 5 to 10 lbf in steps until desired or maximum torque limits are reached.

www.vishay.com

For technical questions, contact: ind-modules@vishay.com

Document Number: 94072

2

 

Revision: 01-Aug-08

Vishay HFA320NJ40CPBF Data Sheet
<![if ! IE]>

<![endif]>IF - Instantaneous Forward Current (A)

 

HFA320NJ40CPbF

HEXFRED®

Vishay High Power Products

Ultrafast Soft Recovery

 

Diode, 320 A

 

1000

100

TJ = 150 °C

TJ = 125 °C 10 TJ = 25 °C

1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

<![if ! IE]>

<![endif]>Case Temperature (°C)

<![if ! IE]>

<![endif]>Maximum Allowable

160

140

120

100

DC

80

60

40

20

0

0

100

200

300

400

500

VFM - Forward Voltage Drop (V)

IF(AV) - DC Forward Current (A)

Fig. 1 - Maximum Forward Voltage Drop vs.

Fig. 4 - Maximum Allowable Case Temperature vs. DC

Instantaneous Forward Current (Per Leg)

Forward Current (Per Leg)

<![if ! IE]>

<![endif]>IR - Reverse Current (µA)

10 000

 

 

 

 

400

TJ = 125 °C

 

TJ = 150 °C

 

 

 

 

 

 

 

 

350

TJ = 25 °C

 

 

 

 

 

1000

 

 

 

 

 

IF = 200 A

 

TJ

= 125 °C

 

 

300

IF = 160 A

 

 

 

 

IF = 70 A

 

 

 

 

 

250

100

 

 

 

<![if ! IE]>

<![endif]>(ns)

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

<![if ! IE]>

<![endif]>rr

 

 

 

 

 

 

 

10

 

 

 

<![if ! IE]>

<![endif]>t

150

 

 

 

 

 

 

 

 

 

 

 

 

1

 

TJ = 25 °C

 

 

100

 

 

 

 

 

 

 

 

 

 

 

50

 

0.1

200

300

400

 

0

 

100

 

100

1000

VR - Reverse Voltage (V)

dIF/dt (A/µs)

Fig. 2 - Typical Reverse Current vs.

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)

Reverse Voltage (Per Leg)

 

<![if ! IE]>

<![endif]>CT - Junction Capacitance (pF)

10 000

 

 

 

80

 

 

 

 

 

 

70

TJ

= 125 °C

 

 

 

 

TJ

= 25 °C

 

 

 

 

60

 

 

 

 

 

<![if ! IE]>

<![endif]>(A)

50

IF = 200 A

 

 

 

IF

= 160 A

 

TJ

= 25 °C

 

 

<![if ! IE]>

<![endif]>RRM

 

I

= 70 A

1000

 

 

40

F

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>I

30

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

10

 

 

100

 

 

 

0

 

 

1

10

100

1000

100

 

1000

VR - Reverse Voltage (V)

dIF/dt (A/µs)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg)

(Per Leg)

 

Document Number: 94072

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

Revision: 01-Aug-08

 

3

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