Vishay HFA30TA60CSPBF Data Sheet

VS-HFA30TA60CSPbF
Ultrafast Soft Recovery Diode, 2 x 15 A
D2PAK
PRODUCT SUMMARY
V
R
V
at 15 A at 25 °C 1.7 V
F
I
F(AV)
t
(typical) 19 ns
rr
T
(maximum) 150 °C
J
Q
(typical) 80 nC
rr
/dt (typical) at 125 °C 160 A/μs
dI
(rec)M
I
(typical) 4.0 A
RRM
Anode Anode
Base
common
cathode
1
Common
cathode
2
2
600 V
2 x 15 A
HEXFRED
3
®
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA30TA60CS is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 15 A per leg continuous current, the VS-HFA30TA60CS is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED peak recovery current (I tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA30TA60CS is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
RRM
rr
®
product line features extremely low values of
) and does not exhibit any
RRM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current
Single pulse forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94071 For technical questions, contact: diodestech@vishay.com Revision: 22-Feb-10 1
per leg
per device 30
J
I
F
FSM
FRM
, T
R
TC = 100 °C
D
TC = 25 °C 74
T
= 100 °C 29
C
Stg
600 V
15
150
60
°C
- 55 to + 150 W
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A
VS-HFA30TA60CSPbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 15 A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage
Maximum forward voltage V
Maximum reverse leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr
rr1
rr2
rr1
rr2
Reverse recovery time See fig. 5, 10
Peak recovery current See fig. 6
Reverse recovery charge See fig. 7
Peak rate of fall of recovery current during t
b
See fig. 8
IR = 100 μA 600 - -
IF = 15 A
I
= 30 A - 1.5 2.0
F
I
= 15 A, TJ = 125 °C - 1.2 1.6
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 400 1000
J
VR = 200 V See fig. 3 - 25 50 pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
See fig. 1
See fig. 2
-1.31.7
-1.010
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 19 -
TJ = 25 °C
-4260
TJ = 125 °C - 70 90
TJ = 25 °C - 4.0 6.0
TJ = 125 °C - 6.5 10
TJ = 25 °C - 80 180
TJ = 125 °C - 220 450
I
= 15 A
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
/dt1 TJ = 25 °C - 188 -
/dt2 TJ = 125 °C - 160 -
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
Junction to case, single leg conducting
Junction to case,
R
thJC
both legs conducting
Thermal resistance, junction to ambient
R
thJA
Weight
Mounting torque
Marking device Case style D
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0.063" from case (1.6 mm) for 10 s - - 300 °C
--1.7
- - 0.85
Typical socket mount - - 80
-2.0- g
-0.07- oz.
6.0
(5.0)
2
PAK HFA30TA60CS
-
Document Number: 94071
12
(10)
K/W
kgf · cm
(lbf · in)
VS-HFA30TA60CSPbF
100
10
- Instantaneous Forward Current (A)
F
I
94071_01
HEXFRED
Ultrafast Soft Recovery Diode, 2 x 15 A
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
J
1
1.0 1.2 1.4 1.6 2.01.8 2.2 2.4
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
100
®
10 000
1000
100
10
- Reverse Current (μA)
R
0.1
I
0.01
94071_02
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
0 100 200 300 500400 600
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
TJ = 25 °C
- Junction Capacitance (pF)
T
C
10
0200400100 300 500 600
94071_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
D = 0.50
0.1
- Thermal Response
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
94071_04
Single pulse
(thermal response)
t1 - Rectangular Pulse Duration (s)
D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
Fig. 4 - Maximum Thermal Impedance Z
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics (Per Leg)
thJC
P
DM
t
1
t
2
1/t2
+ T
thJC
C
101
Document Number: 94071 For technical questions, contact: diodestech@vishay.com
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Revision: 22-Feb-10 3
VS-HFA30TA60CSPbF
Vishay High Power Products
Ultrafast Soft Recovery Diode, 2 x 15 A
100
80
60
(ns)
rr
t
40
VR = 200 V
20
T
= 125 °C
J
= 25 °C
T
J
0
100 1000
94071_05
dIF/dt (A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)
25
VR = 200 V
= 125 °C
T
J
= 25 °C
T
J
20
IF = 30 A
= 15 A
I
F
(A)
rr
I
15
10
= 5 A
I
F
5
IF = 30 A
= 15 A
I
F
= 5 A
I
F
HEXFRED
800
600
400
(nC)
rr
Q
200
0
100 1000
94071_07
Fig. 7 - Typical Stored Charge vs. dI
10 000
1000
/dt (A/μs)
(rec)M
dI
®
VR = 200 V
= 125 °C
T
J
= 25 °C
T
J
IF = 30 A
= 15 A
I
F
= 5 A
I
F
VR = 200 V
= 125 °C
T
J
= 25 °C
T
J
IF = 30 A
= 15 A
I
F
= 5 A
I
F
dIF/dt (A/μs)
/dt (Per Leg)
F
0
100 1000
94071_06
dIF/dt (A/μs)
Fig. 6 - Typical Recovery Current vs. dI
/dt (Per Leg)
F
94071_08
100
100 1000
dIF/dt (A/μs)
Fig. 8 - Typical dI
/dt vs. dIF/dt (Per Leg)
(rec)M
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Document Number: 94071
4 Revision: 22-Feb-10
VS-HFA30TA60CSPbF
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 15 A
= 200 V
V
R
0.01 Ω
L = 70 μH
D.U.T.
(3)
a
(2)
D
IRFP250
S
t
rr
t
b
I
RRM
0.5 I
dI
0.75 I
RRM
(4) Q
- area under curve dened by t
rr
and I
RRM
(5) dI current during t
Q
/dt - peak rate of change of
(rec)M
dIF/dt
adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
dIF/dt
(1)
(1) dI
/dt - rate of change of current
F
through zero crossing
- peak reverse recovery current
(2) I
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative going I through 0.75 I extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
t
(4)
Q
rr
RRM
(5)
/dt
(rec)M
rr
trr x I
RRM
=
rr
2
portion of t
b
rr
Document Number: 94071 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 22-Feb-10 5
VS-HFA30TA60CSPbF
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
VS- HF A 30 TA 60 C S TRL PbF
1 - HPP product suffix
2 - HEXFRED® family
- Process designator: A = Electron irradiated
3
-Current rating (30 = 30 A)
4
- Package outline (TA = TO-220, 3 leads)
5
- Voltage rating (60 = 600 V)
6
- Circuit configuration (C = Common cathode)
7
- S = D2PAK
8
- None = Tube (50 pieces)
9
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
- PbF = Lead (Pb)-free
10
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 15 A
324
51
678910
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
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Document Number: 94071
DIMENSIONS in millimeters and inches
c
B
Detail A
c2
AA
A
± 0.004
B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c)
c1
Base Metal
Plating
Conforms to JEDEC outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010
A
B
MM
(3)
e
2 x
Pad layout
MIN.
11.00 (0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Outline Dimensions
Vishay Semiconductors
D2PAK
SYMBOL
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Document Number: 95046 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 31-Mar-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Dimensioning and tolerancing per ASME Y14.5 M-1994 Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body Thermal pad contour optional within dimension E, L1, D1 and E1 Dimension b1 and c1 apply to base metal only Datum A and B to be determined at datum plane H Controlling dimension: inch Outline conforms to JEDEC outline TO-263AB
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
This document is subject to change without notice.
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
MILLIMETERS INCHES
www.vishay.com/doc?91000
NOTES
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