Vishay HFA30TA60CSPBF Data Sheet

VS-HFA30TA60CSPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 2 x 15 A

D2PAK

PRODUCT SUMMARY

V

R

V

at 15 A at 25 °C 1.7 V

F

I

F(AV)

t

(typical) 19 ns

rr

T

(maximum) 150 °C

J

Q

(typical) 80 nC

rr

/dt (typical) at 125 °C 160 A/μs

dI

(rec)M

I

(typical) 4.0 A

RRM

Anode Anode

Base

common

cathode

1

Common

cathode

2

2

600 V

2 x 15 A

HEXFRED

3

®

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA30TA60CS is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30TA60CS is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
peak recovery current (I
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30TA60CS is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.

RRM

rr

®

product line features extremely low values of

) and does not exhibit any

RRM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current

Single pulse forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 94071 For technical questions, contact: [e-mail]
Revision: 22-Feb-10 1

per leg

per device 30

J

I

F

FSM

FRM

, T

R

TC = 100 °C

D

TC = 25 °C 74

T

= 100 °C 29

C

Stg

600 V

15

150

60

°C

- 55 to + 150 W

www.vishay.com

A

VS-HFA30TA60CSPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 2 x 15 A

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

dI

dI

t

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr

rr1

rr2

rr1

rr2

Reverse recovery time
See fig. 5, 10

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of fall of recovery
current during t

b

See fig. 8

IR = 100 μA 600 - -

IF = 15 A

I

= 30 A - 1.5 2.0

F

I

= 15 A, TJ = 125 °C - 1.2 1.6

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 400 1000

J

VR = 200 V See fig. 3 - 25 50 pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

See fig. 1

See fig. 2

-1.31.7

-1.010

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 19 -

TJ = 25 °C

-4260

TJ = 125 °C - 70 90

TJ = 25 °C - 4.0 6.0

TJ = 125 °C - 6.5 10

TJ = 25 °C - 80 180

TJ = 125 °C - 220 450

I

= 15 A

F

dI

/dt = 200 A/μs

F

V

= 200 V

R

/dt1 TJ = 25 °C - 188 -

/dt2 TJ = 125 °C - 160 -

V

μA

nst

A

nC

A/μs

THERMAL - MECHANICAL SPECIFICATIONS PER LEG

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

lead

Junction to case,
single leg conducting

Junction to case,

R

thJC

both legs conducting

Thermal resistance,
junction to ambient

R

thJA

Weight

Mounting torque

Marking device Case style D

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2 Revision: 22-Feb-10

0.063" from case (1.6 mm) for 10 s - - 300 °C

--1.7

- - 0.85

Typical socket mount - - 80

-2.0- g

-0.07- oz.

6.0

(5.0)

2

PAK HFA30TA60CS

-

Document Number: 94071

12

(10)

K/W

kgf · cm

(lbf · in)

VS-HFA30TA60CSPbF

100

10

- Instantaneous Forward Current (A)

F

I

94071_01

HEXFRED

Ultrafast Soft Recovery Diode, 2 x 15 A

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

1

1.0 1.2 1.4 1.6 2.01.8 2.2 2.4

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current (Per Leg)

100

®

10 000

1000

100

10

- Reverse Current (μA)

R

0.1

I

0.01

94071_02

Vishay High Power Products

TJ = 150 °C

TJ = 125 °C

1

TJ = 25 °C

0 100 200 300 500400 600

VR - Reverse Voltage (V)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage (Per Leg)

TJ = 25 °C

- Junction Capacitance (pF)

T

C

10

0200400100 300 500 600

94071_03

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)

10

1

D = 0.50

0.1

- Thermal Response

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1

94071_04

Single pulse

(thermal response)

t1 - Rectangular Pulse Duration (s)

D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

Fig. 4 - Maximum Thermal Impedance Z

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

Characteristics (Per Leg)

thJC

P

DM

t

1

t

2

1/t2

+ T

thJC

C

101

Document Number: 94071 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 22-Feb-10 3