• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA30TA60CS is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30TA60CS is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
peak recovery current (I
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30TA60CS is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
Document Number: 95046For technical questions within your region, please contact one of the following:www.vishay.com
Revision: 31-Mar-11DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB
MILLIMETERSINCHES
MIN.MAX.MIN.MAX.MIN.MAX.MIN.MAX.
NOTESSYMBOL
This document is subject to change without notice.
, DiodesAsia@vishay.com, DiodesEurope@vishay.com1
MILLIMETERSINCHES
www.vishay.com/doc?91000
NOTES
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