Vishay HFA30TA60CPBF Data Sheet

VS-HFA30TA60CPbF

TO-220AB

Anode

13

2

Base

common

cathode

2

Common

cathode

Anode

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 2 x 15 A

PRODUCT SUMMARY

Package TO-220AB

I

F(AV)

V

R

V

at I

F

F

t

(typ.) 19 ns

rr

max. 150 °C

T

J

Diode variation Common cathode

2 x 15 A

600 V

1.7 V

HEXFRED

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA30TA60CPbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30TA60CPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
peak recovery current (I
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30TA60CPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.

®

and Q

RRM

®

rr

product line features extremely low values of

) and does not exhibit any

RRM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current

Single pulse forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

per leg

per device 30

This document is subject to change without notice.

R

I

F

FSM

FRM

D

, T

J

, [e-mail], [e-mail] 1

TC = 100 °C

TC = 25 °C 74

T

= 100 °C 29

C

Stg

600 V

15

150

60

W

- 55 to + 150 °C

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A

VS-HFA30TA60CPbF

Vishay Semiconductors

HEXFRED

Ultrafast Soft Recovery Diode, 2 x 15 A

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5 and 10

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of fall of
recovery current during t
See fig. 8

b

V

BR

IR = 100 μA 600 - -

IF = 15 A

= 30 A - 1.5 2.0

I

F

I

= 15 A, TJ = 125 °C - 1.2 1.6

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 400 1000

J

VR = 200 V See fig. 3 - 25 50 pF

T

Measured lead to lead 5 mm from package

S

body

rr

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 19 -

TJ = 25 °C

TJ = 125 °C - 70 120

TJ = 25 °C - 4.0 6.0

TJ = 125 °C - 6.5 10

rr1

rr2

TJ = 25 °C - 80 180

TJ = 125 °C - 220 600

/dt1 TJ = 25 °C - 250 -

/dt2 TJ = 125 °C - 160 -

dI

dI

I

RM

t

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

FM

t

rr1

rr2

®

= 15 A

I

F

dI

/dt = 200 A/μs

F

V

= 200 V

R

See fig. 1

See fig. 2

-1.31.7

-1.010

-8-nH

-4260

V

μA

nst

A

nC

A/μs

THERMAL - MECHANICAL SPECIFICATIONS PER LEG

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

lead

Junction to case,
single leg conducting

Junction to case,

R

thJC

both legs conducting

Thermal resistance,
junction to ambient

Thermal resistance,
case to heatsink

R

R

thJA

thCS

Weight

Mounting torque

Marking device Case style TO-220AB HFA30TA60C

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0.063" from case (1.6 mm) for 10 s - - 300 °C

1.7

- - 0.85

Typical socket mount - - 40

Mounting surface, flat, smooth and greased - 0.25 -

-6.0- g

-0.21- oz.

6.0

(5.0)

-

12

(10)

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K/W

kgf · cm

(lbf · in)

Ultrafast Soft Recovery Diode, 2 x 15 A

I

R

- Reverse Current (µA)

VR - Reverse Voltage (V)

0 100 200 300 400 500 600

0.01

0.1

1

10

100

1000

10 000

94070_02

TJ = 125 °C

TJ = 150 °C

TJ = 25 °C

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Response

94070_04

P

DM

t

2

t

1

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

Single pulse

(thermal response)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

100

10

1

- Instantaneous Forward Current (A)

F

I

1.0 1.4 1.81.2 1.6 2.0 2.2 2.4

94070_01

VFM - Forward Voltage Drop (V)

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

HEXFRED

VS-HFA30TA60CPbF

®

Vishay Semiconductors

Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward

Current (Per Leg)

100

- Junction Capacitance (pF)

T

C

10

0 100 200 400 500300 600

94070_03

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage (Per Leg)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage (Per Leg)

TJ = 25 °C

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Fig. 4 - Maximum Thermal Impedance Z

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Characteristics (Per Leg)

thJC

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VS-HFA30TA60CPbF

t

rr

(ns)

dIF/dt (A/µs)

100 1000

0

100

80

20

40

60

94070_05

IF = 30 A
I

F

= 15 A

I

F

= 5.0 A

VR = 200 V
T

J

= 125 °C

T

J

= 25 °C

I

RR

(A)

dIF/dt (A/µs)

100 1000

0

25

20

5

10

15

94070_06

IF = 30 A
I

F

= 15 A

I

F

= 5 A

VR = 200 V
T

J

= 125 °C

T

J

= 25 °C

Q

rr

(nC)

dIF/dt (A/µs)

100 1000

0

800

200

400

600

94070_07

IF = 30 A
I

F

= 15 A

I

F

= 5 A

VR = 200 V
T

J

= 125 °C

T

J

= 25 °C

Vishay Semiconductors

HEXFRED

®

Ultrafast Soft Recovery Diode, 2 x 15 A

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)

Fig. 6 - Typical Recovery Current vs. dI

/dt (Per Leg)

F

Fig. 7 - Typical Stored Charge vs. dI

10 000

/dt (A/µs)

(rec)M

dI

94070_08

VR = 200 V

= 125 °C

T

J

= 25 °C

T

J

IF = 30 A
I

= 15 A

1000

100

F

= 5 A

I

F

100 1000

dIF/dt (A/µs)

Fig. 8 - Typical dI

/dt vs. dIF/dt (Per Leg)

(rec)M

/dt (Per Leg)

F

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HEXFRED

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

V

(AVAL)

V

R(RATED)

I

L(PK)

Decay

time

Current
monitor

High-speed

switch

D.U.T.

R

g

= 25 Ω

+

Freewheel

diode

V

d

= 50 V

L = 100 µH

®

Ultrafast Soft Recovery Diode, 2 x 15 A

V

= 200 V

R

0.01 Ω

L = 70 μH

D.U.T.

VS-HFA30TA60CPbF

Vishay Semiconductors

dIF/dt

adjust

G

D

IRFP250

S

Fig. 9 - Reverse Recovery Parameter Test Circuit

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Revision: 24-May-11 [e-mail]

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Fig. 10 - Reverse Recovery Waveform and Definitions

Fig. 11 - Avalanche Test Circuit and Waveforms

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VS-HFA30TA60CPbF

2

- HEXFRED® family

4

- Current rating (30 = 30 A)

4

5

- Package:

4

TA = TO-220AB

3

- Electron irradiated

6

7

- Voltage rating (60 = 600 V)

1 - Vishay Semiconductors product

-

Circuit configuration:

C = Common cathode

8

Tube standard pack quantity: 50 pieces

- PbF = Lead (Pb)-free

Device code

51 32 4 6 7 8

VS- HF A 30 TA 60 C PbF

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 2 x 15 A

ORDERING INFORMATION TABLE

HEXFRED

®

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95222

Part marking information www.vishay.com/doc?95225

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DIMENSIONS in millimeters and inches

13

2

D

D1

H1

Q

13

2

C

C

D

D

3 x b23 x b

(b, b2)

b1, b3

(H1)

D2

Detail B

C

A

B

L

e1

Lead tip

E

E2

Ø P

0.014 AB

M M

0.015 AB

MM

Seating

plane

c

A2

A1

A

A

A

Lead assignments

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

Conforms to JEDEC outline TO-220AB

(6)

(6)

(7)

(6)

(7)

e

2 x

L1

(2)

Detail B

Section C - C and D - D

View A - A

Base metal Plating

(4)

(4)

c1

c

(6)

Thermal pad

(E)

E1

(6)

Outline Dimensions

Vishay Semiconductors

TO-220AB

SYMBOL

A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7

b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147

D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355  90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimensions: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and
E1

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NOTES SYMBOL

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(7)

(8)

Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline

MILLIMETERS INCHES

NOTES

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