Vishay HFA30TA60CPBF Data Sheet
VS-HFA30TA60CPbF
TO-220AB
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 2 x 15 A
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
V
R
V
at I
F
F
t
(typ.) 19 ns
rr
max. 150 °C
T
J
Diode variation Common cathode
2 x 15 A
600 V
1.7 V
HEXFRED
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA30TA60CPbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30TA60CPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
peak recovery current (I
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30TA60CPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
®
and Q
RRM
®
rr
product line features extremely low values of
) and does not exhibit any
RRM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current
Single pulse forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94070 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 24-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
per leg
per device 30
This document is subject to change without notice.
R
I
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C
TC = 25 °C 74
T
= 100 °C 29
C
Stg
600 V
15
150
60
W
- 55 to + 150 °C
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A
VS-HFA30TA60CPbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 2 x 15 A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5 and 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of
recovery current during t
See fig. 8
b
V
BR
IR = 100 μA 600 - -
IF = 15 A
= 30 A - 1.5 2.0
I
F
I
= 15 A, TJ = 125 °C - 1.2 1.6
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 400 1000
J
VR = 200 V See fig. 3 - 25 50 pF
T
Measured lead to lead 5 mm from package
S
body
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 19 -
TJ = 25 °C
TJ = 125 °C - 70 120
TJ = 25 °C - 4.0 6.0
TJ = 125 °C - 6.5 10
rr1
rr2
TJ = 25 °C - 80 180
TJ = 125 °C - 220 600
/dt1 TJ = 25 °C - 250 -
/dt2 TJ = 125 °C - 160 -
dI
dI
I
RM
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
FM
t
rr1
rr2
®
= 15 A
I
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
See fig. 1
See fig. 2
-1.31.7
-1.010
-8-nH
-4260
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
Junction to case,
single leg conducting
Junction to case,
R
thJC
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-220AB HFA30TA60C
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
1.7
- - 0.85
Typical socket mount - - 40
Mounting surface, flat, smooth and greased - 0.25 -
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11
This document is subject to change without notice.
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K/W
kgf · cm
(lbf · in)
Ultrafast Soft Recovery Diode, 2 x 15 A
I
R
- Reverse Current (µA)
VR - Reverse Voltage (V)
0 100 200 300 400 500 600
0.01
0.1
1
10
100
1000
10 000
94070_02
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
94070_04
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
100
10
1
- Instantaneous Forward Current (A)
F
I
1.0 1.4 1.81.2 1.6 2.0 2.2 2.4
94070_01
VFM - Forward Voltage Drop (V)
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
J
HEXFRED
VS-HFA30TA60CPbF
®
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward
Current (Per Leg)
100
- Junction Capacitance (pF)
T
C
10
0 100 200 400 500300 600
94070_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
TJ = 25 °C
Document Number: 94070 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 24-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This document is subject to change without notice.
Characteristics (Per Leg)
thJC
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