Vishay HFA30TA60C User Manual

HFA30TA60C

Vishay High Power Products

Ultrafast Soft Recovery Diode, 2 x 15 A

Base

common

cathode

2

2

Common

Anode

PRODUCT SUMMARY

V

R

V

at 15 A at 25 °C 1.7 V

F

I

F(AV)

(typical) 19 ns

t

rr

T

(maximum) 150 °C

J

Q

(typical) 80 nC

rr

dI

/dt (typical) at 125 °C 160 A/µs

(rec)M

I

(typical) 4.0 A

RRM

cathode

13

TO-220AB

Anode

600 V

2 x 15 A

HEXFRED

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Guaranteed avalanche

• Specified at operating conditions

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA30TA60C is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 15 A per leg continuous
current, the HFA30TA60C is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA30TA60C is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

®

RRM

rr

®

product line features

) and

RRM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current

Single pulse forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 93091 For technical questions, contact: [e-mail]
Revision: 29-Jul-08 1

per leg

per device 30

J

I

F

FSM

FRM

, T

R

TC = 100 °C

D

TC = 25 °C 74

T

= 100 °C 29

C

Stg

600 V

15

150

60

W

- 55 to + 150 °C

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A

HFA30TA60C

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 2 x 15 A

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

dI

dI

rr1

t

rr2

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr

rr1

rr2

Reverse recovery time
See fig. 5 and 10

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of fall of
recovery current during t
See fig. 8

b

IR = 100 µA 600 - -

IF = 15 A

I

= 30 A - 1.5 2.0

F

I

= 15 A, TJ = 125 °C - 1.2 1.6

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 400 1000

J

VR = 200 V See fig. 3 - 25 50 pF

T

Measured lead to lead 5 mm from package body - 8 - nH

S

See fig. 1

See fig. 2

-1.31.7

-1.010

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 19 -

TJ = 25 °C

-4260

TJ = 125 °C - 70 120

TJ = 25 °C - 4.0 6.0

TJ = 125 °C - 6.5 10

TJ = 25 °C - 80 180

TJ = 125 °C - 220 600

I

= 15 A

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

/dt1 TJ = 25 °C - 250 -

/dt2 TJ = 125 °C - 160 -

V

µA

nst

A

nC

A/µs

THERMAL - MECHANICAL SPECIFICATIONS PER LEG

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

lead

Junction to case,
single leg conducting

Junction to case,

R

thJC

both legs conducting

Thermal resistance,
junction to ambient

Thermal resistance,
case to heatsink

R

thJA

R

thCS

Weight

Mounting torque

Marking device Case style TO-220AB HFA30TA60C

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2 Revision: 29-Jul-08

0.063" from case (1.6 mm) for 10 s - - 300 °C

1.7

- - 0.85

Typical socket mount - - 40

Mounting surface, flat, smooth and greased - 0.25 -

-6.0- g

-0.21- oz.

6.0

(5.0)

-

12

(10)

Document Number: 93091

K/W

kgf · cm
(lbf · in)

A

A

HFA30TA60C

100

HEXFRED

®

Vishay High Power Products

Ultrafast Soft Recovery Diode, 2 x 15 A

10000

T = 150°C

1000

100

10

1

0.1

0.01

T = 150°C

J

T = 125°C

10

J

T = 25°C

J

100

J

T = 125°C

J

T = 25°C

J

0 100 200 300 400 500 600

Reverse Voltage - V (V)

R

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage (Per Leg)

A

1

1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

Forward Voltage Drop - V (V)

FM

A

Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous

Forward Current (Per Leg)

10

thJC

1

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Fig. 4 - Maximum Thermal Impedance Z

T = 25°C

J

10

0 100200300400500600

Reverse Voltage - V (V)

R

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage (Per Leg)

P

DM

t

1

t

2

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

Characteristics (Per Leg)

thJC

1 2

J DM thJC C

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Revision: 29-Jul-08 3

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HFA30TA60C

A

A

A

A

Vishay High Power Products

100

80

60

40

20

V = 200V

R

T = 125°C

J

T = 25°C

J

0

di /dt - (A/µs)

f

HEXFRED

®

Ultrafast Soft Recovery Diode, 2 x 15 A

800

V = 200V

600

400

200

0

R

T = 125°C

J

T = 25°C

J

I = 30A

F

I = 15A

F

I = 5.0A

F

I = 30A

F

I = 15A

F

I = 5.0A

F

0001001

di /dt - (A/µs)

f

0001001

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)

25

V = 200V

R

T = 125°C

J

T = 25°C

J

20

I = 30A

F

I = 15A

F

I = 5.0A

F

15

10

5

0

di /dt - (A/µs)

f

Fig. 6 - Typical Recovery Current vs. dI

/dt (Per Leg)

F

0001001

Fig. 7 - Typical Stored Charge vs. dI

10000

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 30A

F

I = 15A

1000

100

F

I = 5.0A

F

Fig. 8 - Typical dI

di /dt - (A/µs)

f

/dt vs. dIF/dt (Per Leg)

(rec)M

/dt (Per Leg)

F

0001001

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4 Revision: 29-Jul-08

Document Number: 93091

HFA30TA60C

HEXFRED

®

Ultrafast Soft Recovery Diode, 2 x 15 A

V

= 200 V

R

0.01 Ω

L = 70 µH

D.U.T.

(3)

a

(2)

D

IRFP250

S

t

rr

t

b

I

RRM

dI

0.75 I

RRM

(4) Q

- area under curve defined by t

rr

and I

RRM

(5) dI
current during t

/dt - peak rate of change of

(rec)M

dIF/dt

adjust

G

Fig. 9 - Reverse Recovery Parameter Test Circuit

I

F

0

dIF/dt

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

(2) I

- peak reverse recovery current

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

RRM

Fig. 10 - Reverse Recovery Waveform and Definitions

t

Vishay High Power Products

(4)

Q

rr

0.5 I

RRM

(5)

/dt

(rec)M

rr

trr x I

RRM

=

Q

rr

2

portion of t

b

rr

L = 100 µH

I

L(PK)

High-speed

Freewheel

diode

switch

V

= 50 V

d

+

Decay

time

V

(AVAL)

V

R(RATED)

D.U.T.

Current
monitor

R

g

= 25 Ω

Fig. 11 - Avalanche Test Circuit and Waveforms

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95222

Part marking information http://www.vishay.com/doc?95225

Document Number: 93091 For technical questions, contact: [e-mail]

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Revision: 29-Jul-08 5

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

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Revision: 12-Mar-07 1