Vishay HFA30PB120PBF Data Sheet
VS-HFA30PB120PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 30 A
Base
common
cathode
2
13
Cathode
TO-247AC modified
Anode
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
V
R
V
at I
F
F
(typ.) 47 ns
t
rr
T
max. 150 °C
J
Diode variation Single die
30 A
1200 V
4.1 V
HEXFRED
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA30PB120PbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200 V and 30 A
continuous current, the VS-HFA30PB120PbF is especially
well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultrafast recovery time, the
HEXFRED
peak recovery current (I
tendency to “snap-off” during the t
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30PB120PbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
®
and Q
RRM
®
product line features extremely low values of
rr
) and does not exhibit any
RRM
portion of recovery. The
b
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94069 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
R
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C 30
TC = 25 °C 350
T
= 100 °C 140
C
Stg
1200 V
120
90
W
- 55 to + 150 °C
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ASingle pulse forward current I
VS-HFA30PB120PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 30 A
HEXFRED
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
IR = 100 μA 1200 - -
IF = 30 A
I
Maximum forward voltage V
Maximum reverse
leakage current
Junction capacitance C
Series inductance L
FM
I
RM
T
S
= 60 A - 3.1 5.7
F
I
= 30 A, TJ = 125 °C - 2.3 4.0
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 1.1 4000
J
VR = 200 V See fig. 3 - 50 75 pF
Measured lead to lead 5 mm from package
body
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during t
b
See fig. 8
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
t
rr
rr1
rr2
rr1
rr2
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 47 -
TJ = 25 °C
TJ = 125 °C - 170 260
TJ = 25 °C - 10 15
TJ = 125 °C - 16 24
TJ = 25 °C - 650 980
TJ = 125 °C - 1540 2310
/dt1 TJ = 25 °C - 270 -
/dt2 TJ = 125 °C - 240 -
®
I
= 30 A
F
dI
/dt = 200 A/μs
F
= 200 V
V
R
See fig. 1
See fig. 2
-2.44.1
-1.340
-8.0-nH
- 110 170
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style TO-247AC modified (JEDEC) HFA30PB120
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
lead
R
- - 0.36
thJC
R
Typical socket mount - - 80
thJA
R
thCS
Mounting surface, flat, smooth and greased - 0.50 -
-2.0 - g
-0.07- oz.
6.0
(5.0)
-
12
(10)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11
This document is subject to change without notice.
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°C/W
kgf · cm
(lbf · in)
HEXFRED
I
F
- Instantaneous Forward Current (A)
VF - Forward Voltage Drop (V)
12345678
1
100
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
93090_01
100
1
100 1000
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
93090_03
10
10
1000
TJ = 25 °C
0.01
0.1
0.000001 0.00001 0.0001 0.001 0.01
0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
0.001
93090_04
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal response)
0.234
0.069
0.056
0.000100
0.000434
0.002202
Ri (°C/W)
τi (s)
τ
1
τ
J
R1R2R
3
τ
C
τ2τ
3
Ci = τi/Ri
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
Ultrafast Soft Recovery Diode, 30 A
®
10
1
- Reverse Current (µA)
R
I
VS-HFA30PB120PbF
Vishay Semiconductors
= 150 °C
T
J
T
= 125 °C
J
TJ = 25 °C
Fig. 1 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
93090_02
0.1
200
400
600
800
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
1000
1200
Document Number: 94069 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
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This document is subject to change without notice.
Characteristics
thJC
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