Vishay HFA30PB120PBF Data Sheet

VS-HFA30PB120PbF

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 30 A

Base

common

cathode

2

13

Cathode

TO-247AC modified

Anode

PRODUCT SUMMARY

Package TO-247AC modified (2 pins)

I

F(AV)

V

R

V

at I

F

F

(typ.) 47 ns

t

rr

T

max. 150 °C

J

Diode variation Single die

30 A

1200 V

4.1 V

HEXFRED

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA30PB120PbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200 V and 30 A
continuous current, the VS-HFA30PB120PbF is especially
well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultrafast recovery time, the
HEXFRED
peak recovery current (I
tendency to “snap-off” during the t
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30PB120PbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.

®

and Q

RRM

®

product line features extremely low values of

rr

) and does not exhibit any

RRM

portion of recovery. The

b

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

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R

F

FSM

FRM

D

, T

J

, [e-mail], [e-mail] 1

TC = 100 °C 30

TC = 25 °C 350

T

= 100 °C 140

C

Stg

1200 V

120

90

W

- 55 to + 150 °C

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ASingle pulse forward current I

VS-HFA30PB120PbF

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 30 A

HEXFRED

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

V

BR

IR = 100 μA 1200 - -

IF = 30 A

I

Maximum forward voltage V

Maximum reverse
leakage current

Junction capacitance C

Series inductance L

FM

I

RM

T

S

= 60 A - 3.1 5.7

F

I

= 30 A, TJ = 125 °C - 2.3 4.0

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 1.1 4000

J

VR = 200 V See fig. 3 - 50 75 pF

Measured lead to lead 5 mm from package
body

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5, 10

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of fall of recovery
current during t

b

See fig. 8

dI

dI

t

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

t

rr

rr1

rr2

rr1

rr2

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 47 -

TJ = 25 °C

TJ = 125 °C - 170 260

TJ = 25 °C - 10 15

TJ = 125 °C - 16 24

TJ = 25 °C - 650 980

TJ = 125 °C - 1540 2310

/dt1 TJ = 25 °C - 270 -

/dt2 TJ = 125 °C - 240 -

®

I

= 30 A

F

dI

/dt = 200 A/μs

F

= 200 V

V

R

See fig. 1

See fig. 2

-2.44.1

-1.340

-8.0-nH

- 110 170

V

μA

nst

A

nC

A/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device Case style TO-247AC modified (JEDEC) HFA30PB120

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0.063" from case (1.6 mm) for 10 s - - 300 °C

lead

R

- - 0.36

thJC

R

Typical socket mount - - 80

thJA

R

thCS

Mounting surface, flat, smooth and greased - 0.50 -

-2.0 - g

-0.07- oz.

6.0

(5.0)

-

12

(10)

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°C/W

kgf · cm

(lbf · in)

HEXFRED

I

F

- Instantaneous Forward Current (A)

VF - Forward Voltage Drop (V)

12345678

1

100

10

TJ = 175 °C

TJ = 125 °C

TJ = 25 °C

93090_01

100

1

100 1000

VR - Reverse Voltage (V)

C

T

- Junction Capacitance (pF)

93090_03

10

10

1000

TJ = 25 °C

0.01

0.1

0.000001 0.00001 0.0001 0.001 0.01

0.1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Response

0.001

93090_04

1

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

Single pulse

(thermal response)

0.234

0.069

0.056

0.000100

0.000434

0.002202

Ri (°C/W)

τi (s)

τ

1

τ

J

R1R2R

3

τ

C

τ2τ

3

Ci = τi/Ri

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

Ultrafast Soft Recovery Diode, 30 A

®

10

1

- Reverse Current (µA)

R

I

VS-HFA30PB120PbF

Vishay Semiconductors

= 150 °C

T

J

T

= 125 °C

J

TJ = 25 °C

Fig. 1 - Typical Forward Voltage Drop vs.

Instantaneous Forward Current

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

93090_02

0.1
200

400

600

800

VR - Reverse Voltage (V)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage

1000

1200

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Fig. 4 - Maximum Thermal Impedance Z

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Characteristics

thJC

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VS-HFA30PB120PbF

0

100 150

dIF/dt (A/µs)

t

rr

(ns)

25

75

50

93090_05

100

125

150

175

200

225

250

275

300

200 250 300 350 400 450 500

IF = 60 A
I

F

= 30 A

I

F

= 15 A

VR = 390 V
T

J

= 125 °C

T

J

= 25 °C

0

100 150

dIF/dt (A/µs)

I

RRM

(A)

5

15

10

20

93090_06

25

30

35

200 250 300 350 400 450 500

IF = 60 A
I

F

= 30 A

I

F

= 15 A

VR = 390 V
T

J

= 125 °C

T

J

= 25 °C

0

100 200

dIF/dt (A/µs)

Q

rr

(nC)

500

1500

1000

2000

93090_07

2500

3000

300 400 500

IF = 60 A
I

F

= 30 A

I

F

= 15 A

VR = 390 V
T

J

= 125 °C

T

J

= 25 °C

Vishay Semiconductors

HEXFRED

Ultrafast Soft Recovery Diode, 30 A

®

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt

(Per Leg)

Fig. 6 - Typical Recovery Current vs. dI

/dt (Per Leg)

F

900

800

700

600

500

/dt (A/µs)

400

(rec)M

300

dI

200

100

0

100 150

93090_08

Fig. 8 - Typical dI

Fig. 7 - Typical Stored Charge vs. dI

(Per Leg)

VR = 390 V

= 125 °C

T

J

= 25 °C

T

J

IF = 15 A

IF = 60 A

200 250 300 350 400 450 500

dIF/dt (A/µs)

/dt vs. dIF/dt(Per Leg)

(rec)M

/dt

F

IF = 30 A

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V

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

V

(AVAL)

V

R(RATED)

I

L(PK)

Decay

time

Current
monitor

High-speed

switch

D.U.T.

R

g

= 25 Ω

+

Freewheel

diode

V

d

= 50 V

L = 100 µH

= 200 V

R

®

HEXFRED

Ultrafast Soft Recovery Diode, 30 A

0.01 Ω

L = 70 μH

D.U.T.

VS-HFA30PB120PbF

Vishay Semiconductors

dIF/dt

adjust

G

D

IRFP250

S

Fig. 9 - Reverse Recovery Parameter Test Circuit

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Revision: 23-May-11 [e-mail]

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Fig. 10 - Reverse Recovery Waveform and Definitions

Fig. 11 - Avalanche Test Circuit and Waveforms

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VS-HFA30PB120PbF

Vishay Semiconductors

ORDERING INFORMATION TABLE

Ultrafast Soft Recovery Diode, 30 A

HEXFRED

®

Device code

1 - Vishay Semiconductors product

2

3

4

5

6

7

Dimensions www.vishay.com/doc?95253

Part marking information www.vishay.com/doc?95255

SPICE model www.vishay.com/doc?95358

HFVS- A 30 PB 120 PbF

1

- HEXFRED® family

- Electron irradiated

- Current rating (30 = 30 A)

- PB = TO-247AC modified

- Voltage rating: (120 = 1200 V)

-

LINKS TO RELATED DOCUMENTS

32 4 6 7

PbF = Lead (Pb)-free

5

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DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay Semiconductors

(2) R/2

Q

2 x R

(2)

(5) L1

2 x b2

0.10 AC

Planting

(3)

B

C

3 x b

M M

(c)

Section C - C, D - D, E - E

E

1

2

b4

(b1, b3, b5)

(b, b2, b4)

N

3

(4)

2 x e

S

D

L

Base metal

c1

See view B

A

A2

A

D

A

C

A1

DDE E

View B

A

(6)

ΦP

M M

Ø K BD

D2

Thermal pad

Lead assignments

Diodes

1. - Anode/open

C

C

2. - Cathode

3. - Anode

(Datum B)

ΦP1

D1 (4)

4

(4)
E1

View A - A

SYMBOL

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 K 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144

c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

Notes

(1)

Dimensioning and tolerance per ASME Y14.5M-1994

(2)

Contour of slot optional

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Thermal pad contour optional with dimensions D1 and E1

(5)

Lead finish uncontrolled in L1

(6)

P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

(7)

Outline conforms to JEDEC outline TO-247 with exception of dimension c

Revision: 21-Jun-11

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