Vishay HFA30PB120 User Manual

HFA30PB120

Vishay High Power Products

Ultrafast Soft Recovery Diode, 30 A

Base

common

cathode

2

13

Anode

1

TO-247AC modified

PRODUCT SUMMARY

V

R

V

at 30 A at 25 °C 4.1 V

F

I

F(AV)

(typical) 47 ns

t

rr

T

(maximum) 150 °C

J

Q

(typical) 120 nC

rr

dI

/dt (typical) at 125 °C 240 A/µs

(rec)M

(typical) 4.7 A

I

RRM

Anode

HEXFRED

®

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

RRM

rr

• Guaranteed avalanche

• Specified at operating conditions

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

2

1200 V

30 A

HFA30PB120 is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 30 A continuous current, the
HFA30PB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I

®

product line features

) and

RRM

does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA30PB120 is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 93090 For technical questions, contact: [e-mail]
Revision: 25-Aug-08 1

J

F

FSM

FRM

, T

R

TC = 100 °C 30

D

TC = 25 °C 350

T

= 100 °C 140

C

Stg

1200 V

120

90

W

- 55 to + 150 °C

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ASingle pulse forward current I

HFA30PB120

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 30 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

dI

dI

rr1

t

rr2

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr

rr1

rr2

Reverse recovery time
See fig. 5, 10

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of fall of recovery
current during t

b

See fig. 8

IR = 100 µA 1200 - -

IF = 30 A

I

= 60 A - 3.1 5.7

F

I

= 30 A, TJ = 125 °C - 2.3 4.0

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 1.1 4000

J

VR = 200 V See fig. 3 - 50 75 pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

See fig. 1

See fig. 2

-2.44.1

-1.340

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 47 -

TJ = 25 °C

- 110 170

TJ = 125 °C - 170 260

TJ = 25 °C - 10 15

TJ = 125 °C - 16 24

TJ = 25 °C - 650 980

TJ = 125 °C - 1540 2310

I

= 30 A

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

/dt1 TJ = 25 °C - 270 -

/dt2 TJ = 125 °C - 240 -

V

µA

nst

A

nC

A/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device Case style TO-247AC modified (JEDEC) HFA30PB120

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2 Revision: 25-Aug-08

0.063" from case (1.6 mm) for 10 s - - 300 °C

lead

- - 0.36

R

thJC

Typical socket mount - - 80

R

thJA

R

thCS

Mounting surface, flat, smooth and greased - 0.50 -

-2.0 - g

-0.07- oz.

6.0

(5.0)

-

12

(10)

Document Number: 93090

°C/W

kgf · cm
(lbf · in)

τ

HFA30PB120

Ultrafast Soft Recovery Diode, 30 A

100

Tj = 175°C

10

Tj = 125°C

, Instantaneous Forward Current (A)

F

I

Tj = 25°C

1

1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

VF, Forward Voltage Drop (V)

HEXFRED

®

Vishay High Power Products

10

)
A
µ

(

R

I

­t
n
e

1

r

r
u

C
e

s

r
e
v
e

R

T

150°C

J =

T

125°C

J =

T

25°C

J =

0.1
200 400 600 800 1000 1200

Reverse Voltage - VR(V)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage

1000

)
F
p

(

T

C

­e

c
n
a

t

i

100

c
a
p
a

C
n

o

i

t
c
n
u
J

10

T

25°C

J =

1 10 100 1000

Reverse Voltage - VR(V)

Fig. 1 - Typical Forward Voltage Drop vs.

Instantaneous Forward Current

1

)

Z
(

e
s
n
o
p
s
e

R
l
a

m
r

e
h
T

D = 0.50

C
J
h

t

0.1

0.01

0.001

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE
( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0. 1

Fig. 4 - Maximum Thermal Impedance Z

R

R

1

2

R

R

1

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

t1, Rectangular Pulse Duration (sec)

2

τ

2

τ

2

thJC

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

R

3

Ri (°C/W) τi (sec)

R

3

τ

C

0.234 0.000100

τ

3

0.069 0.000434

τ

3

0.056 0.002202

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Characteristics

Document Number: 93090 For technical questions, contact: [e-mail]
Revision: 25-Aug-08 3

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HFA30PB120

Vishay High Power Products

300

VR= 390V

275

TJ = 25°C _____

TJ = 125°C ----------

250

225

200

175

)
s
n

(

150

r

r

t

125

100

75

50

25

0

100 150 200 250 300 350 400 450 500

diF/dt (A/µs)

IF = 60A

I

= 30A

F

= 15A

I

F

HEXFRED

®

Ultrafast Soft Recovery Diode, 30 A

3000

VR= 390V

= 25°C _____

T

J

= 125° C ----------

T

2500

2000

)
C

n

(

1500

r

r
Q

1000

J

500

0

100 200 300 400 500

= 60A

I

F

= 30A

I

F

I

= 15A

F

diF/dt (A/µs)

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt

(Per Leg)

35

VR= 390 V

= 25 °C _____

T

J

T

= 125 °C ----------

30

J

= 60 A

I

F

25

I

= 30 A

F

I

= 15 A

)
A

(

M
R
R

I

F

20

15

10

5

0

100 150 200 250 300 350 400 450 500

/dt (A/µs)

di

F

Fig. 7 - Typical Stored Charge vs. dI

(Per Leg)

900

VR= 390V

= 25°C _____

T

J

800

T

= 125°C ----------

J

700

IF15 A

600

)
s
µ

/
A

(

500

t
d
/

M

)

400

c
e

r

(

i
d

300

200

100

0

100 150 200 250 300 350 400 450 500

diF/dt (A/µs)

I

F

= 60 A

I

F

F

= 30 A

/dt

Fig. 6 - Typical Recovery Current vs. dI

/dt (Per Leg)

F

Fig. 8 - Typical dI

(Per Leg)

/dt vs. dIF/dt

(rec)M

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Document Number: 93090

4 Revision: 25-Aug-08

HFA30PB120

HEXFRED

®

Ultrafast Soft Recovery Diode, 30 A

V

= 200 V

R

0.01 Ω

L = 70 µH

(3)

a

(2)

D

IRFP250

S

t

rr

I

RRM

(4) Q
and I

(5) dI
current during t

dIF/dt

adjust

G

Fig. 9 - Reverse Recovery Parameter Test Circuit

I

F

0

dIF/dt

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

(2) I

- peak reverse recovery current

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

RRM

Fig. 10 - Reverse Recovery Waveform and Definitions

t

Vishay High Power Products

D.U.T.

t

b

(4)

Q

rr

0.5 I

RRM

(rec)M

Q

=

rr

(5)

/dt

trr x I

RRM

2

portion of t

b

rr

dI

0.75 I

RRM

- area under curve defined by t

rr

RRM

/dt - peak rate of change of

(rec)M

rr

L = 100 µH

I

L(PK)

High-speed

Freewheel

diode

switch

V

= 50 V

d

+

Decay

time

V

(AVAL)

V

R(RATED)

Current
monitor

D.U.T.

R

g

= 25 Ω

Fig. 11 - Avalanche Test Circuit and Waveforms

Document Number: 93090 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 25-Aug-08 5

HFA30PB120

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

HF A 30 PB 120 -

1 - HEXFRED® family

2 - Process designator: A = Electron irradiated

3

4

5

6

HEXFRED

®

Ultrafast Soft Recovery Diode, 30 A

51324

6

B = Platinum diffused

- Current rating (30 = 30 A)

- Package outline (PB = TO-247, 2 pins)

- Voltage rating (120 = 1200 V)

- None = Standard production

PbF = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95253

Part marking information http://www.vishay.com/doc?95255

SPICE model http://www.vishay.com/doc?95358

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6 Revision: 25-Aug-08

Document Number: 93090

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1