Vishay HFA30PB120 User Manual
HFA30PB120
Vishay High Power Products
Ultrafast Soft Recovery Diode, 30 A
Base
common
cathode
2
13
Anode
1
TO-247AC modified
PRODUCT SUMMARY
V
R
V
at 30 A at 25 °C 4.1 V
F
I
F(AV)
(typical) 47 ns
t
rr
T
(maximum) 150 °C
J
Q
(typical) 120 nC
rr
dI
/dt (typical) at 125 °C 240 A/µs
(rec)M
(typical) 4.7 A
I
RRM
Anode
HEXFRED
®
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
RRM
rr
• Guaranteed avalanche
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
2
1200 V
30 A
HFA30PB120 is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 30 A continuous current, the
HFA30PB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
®
product line features
) and
RRM
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA30PB120 is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 93090 For technical questions, contact: diodes-tech@vishay.com
Revision: 25-Aug-08 1
J
F
FSM
FRM
, T
R
TC = 100 °C 30
D
TC = 25 °C 350
T
= 100 °C 140
C
Stg
1200 V
120
90
W
- 55 to + 150 °C
www.vishay.com
ASingle pulse forward current I
HFA30PB120
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 30 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
dI
dI
rr1
t
rr2
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr
rr1
rr2
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during t
b
See fig. 8
IR = 100 µA 1200 - -
IF = 30 A
I
= 60 A - 3.1 5.7
F
I
= 30 A, TJ = 125 °C - 2.3 4.0
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 1.1 4000
J
VR = 200 V See fig. 3 - 50 75 pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
See fig. 1
See fig. 2
-2.44.1
-1.340
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 47 -
TJ = 25 °C
- 110 170
TJ = 125 °C - 170 260
TJ = 25 °C - 10 15
TJ = 125 °C - 16 24
TJ = 25 °C - 650 980
TJ = 125 °C - 1540 2310
I
= 30 A
F
/dt = 200 A/µs
dI
F
V
= 200 V
R
/dt1 TJ = 25 °C - 270 -
/dt2 TJ = 125 °C - 240 -
V
µA
nst
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style TO-247AC modified (JEDEC) HFA30PB120
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
2 Revision: 25-Aug-08
0.063" from case (1.6 mm) for 10 s - - 300 °C
lead
- - 0.36
R
thJC
Typical socket mount - - 80
R
thJA
R
thCS
Mounting surface, flat, smooth and greased - 0.50 -
-2.0 - g
-0.07- oz.
6.0
(5.0)
-
12
(10)
Document Number: 93090
°C/W
kgf · cm
(lbf · in)
τ
HFA30PB120
Ultrafast Soft Recovery Diode, 30 A
100
Tj = 175°C
10
Tj = 125°C
, Instantaneous Forward Current (A)
F
I
Tj = 25°C
1
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VF, Forward Voltage Drop (V)
HEXFRED
®
Vishay High Power Products
10
)
A
µ
(
R
I
t
n
e
1
r
r
u
C
e
s
r
e
v
e
R
T
150°C
J =
T
125°C
J =
T
25°C
J =
0.1
200 400 600 800 1000 1200
Reverse Voltage - VR(V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
1000
)
F
p
(
T
C
e
c
n
a
t
i
100
c
a
p
a
C
n
o
i
t
c
n
u
J
10
T
25°C
J =
1 10 100 1000
Reverse Voltage - VR(V)
Fig. 1 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
1
)
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
D = 0.50
C
J
h
t
0.1
0.01
0.001
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-006 1E-005 0.0001 0.001 0.01 0. 1
Fig. 4 - Maximum Thermal Impedance Z
R
R
1
2
R
R
1
τ
J
τ
J
τ
1
τ
1
Ci= τi/Ri
t1, Rectangular Pulse Duration (sec)
2
τ
2
τ
2
thJC
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
R
3
Ri (°C/W) τi (sec)
R
3
τ
C
0.234 0.000100
τ
3
0.069 0.000434
τ
3
0.056 0.002202
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Characteristics
Document Number: 93090 For technical questions, contact: diodes-tech@vishay.com
Revision: 25-Aug-08 3
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