Vishay HFA30PB120 User Manual

HFA30PB120
Ultrafast Soft Recovery Diode, 30 A
Base
common
cathode
2
13
Anode
1
TO-247AC modified
PRODUCT SUMMARY
V
R
V
at 30 A at 25 °C 4.1 V
F
I
F(AV)
(typical) 47 ns
t
rr
T
(maximum) 150 °C
J
Q
(typical) 120 nC
rr
dI
/dt (typical) at 125 °C 240 A/µs
(rec)M
(typical) 4.7 A
I
RRM
Anode
HEXFRED
®
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
RRM
rr
• Guaranteed avalanche
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
2
1200 V
30 A
HFA30PB120 is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 30 A continuous current, the HFA30PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED extremely low values of peak recovery current (I
®
product line features
) and
RRM
does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA30PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 93090 For technical questions, contact: diodes-tech@vishay.com Revision: 25-Aug-08 1
J
F
FSM
FRM
, T
R
TC = 100 °C 30
D
TC = 25 °C 350
T
= 100 °C 140
C
Stg
1200 V
120
90
W
- 55 to + 150 °C
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ASingle pulse forward current I
HFA30PB120
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 30 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage
Maximum forward voltage V
Maximum reverse leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
dI
dI
rr1
t
rr2
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr
rr1
rr2
Reverse recovery time See fig. 5, 10
Peak recovery current See fig. 6
Reverse recovery charge See fig. 7
Peak rate of fall of recovery current during t
b
See fig. 8
IR = 100 µA 1200 - -
IF = 30 A
I
= 60 A - 3.1 5.7
F
I
= 30 A, TJ = 125 °C - 2.3 4.0
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 1.1 4000
J
VR = 200 V See fig. 3 - 50 75 pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
See fig. 1
See fig. 2
-2.44.1
-1.340
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 47 -
TJ = 25 °C
- 110 170
TJ = 125 °C - 170 260
TJ = 25 °C - 10 15
TJ = 125 °C - 16 24
TJ = 25 °C - 650 980
TJ = 125 °C - 1540 2310
I
= 30 A
F
/dt = 200 A/µs
dI
F
V
= 200 V
R
/dt1 TJ = 25 °C - 270 -
/dt2 TJ = 125 °C - 240 -
V
µA
nst
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device Case style TO-247AC modified (JEDEC) HFA30PB120
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0.063" from case (1.6 mm) for 10 s - - 300 °C
lead
- - 0.36
R
thJC
Typical socket mount - - 80
R
thJA
R
thCS
Mounting surface, flat, smooth and greased - 0.50 -
-2.0 - g
-0.07- oz.
6.0
(5.0)
-
12
(10)
Document Number: 93090
°C/W
kgf · cm (lbf · in)
τ
HFA30PB120
Ultrafast Soft Recovery Diode, 30 A
100
Tj = 175°C
10
Tj = 125°C
, Instantaneous Forward Current (A)
F
I
Tj = 25°C
1
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VF, Forward Voltage Drop (V)
HEXFRED
®
Vishay High Power Products
10
) A µ
(
R
I
­t n e
1
r
r u
C e
s
r e v e
R
T
150°C
J =
T
125°C
J =
T
25°C
J =
0.1 200 400 600 800 1000 1200
Reverse Voltage - VR(V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
1000
) F p
(
T
C
­e
c n a
t
i
100
c a p a
C n
o
i
t c n u J
10
T
25°C
J =
1 10 100 1000
Reverse Voltage - VR(V)
Fig. 1 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
1
)
Z (
e s n o p s e
R l a
m r
e h T
D = 0.50
C J h
t
0.1
0.01
0.001
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE ( THERMAL RESPONSE )
1E-006 1E-005 0.0001 0.001 0.01 0. 1
Fig. 4 - Maximum Thermal Impedance Z
R
R
1
2
R
R
1
τ
J
τ
J
τ
1
τ
1
Ci= τi/Ri
t1, Rectangular Pulse Duration (sec)
2
τ
2
τ
2
thJC
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
R
3
Ri (°C/W) τi (sec)
R
3
τ
C
0.234 0.000100
τ
3
0.069 0.000434
τ
3
0.056 0.002202
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Characteristics
Document Number: 93090 For technical questions, contact: diodes-tech@vishay.com Revision: 25-Aug-08 3
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HFA30PB120
Vishay High Power Products
300
VR= 390V
275
TJ = 25°C _____
TJ = 125°C ----------
250
225
200
175
) s n
(
150
r
r
t
125
100
75
50
25
0
100 150 200 250 300 350 400 450 500
diF/dt (A/µs)
IF = 60A
I
= 30A
F
= 15A
I
F
HEXFRED
®
Ultrafast Soft Recovery Diode, 30 A
3000
VR= 390V
= 25°C _____
T
J
= 125° C ----------
T
2500
2000
) C
n
(
1500
r
r Q
1000
J
500
0
100 200 300 400 500
= 60A
I
F
= 30A
I
F
I
= 15A
F
diF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
(Per Leg)
35
VR= 390 V
= 25 °C _____
T
J
T
= 125 °C ----------
30
J
= 60 A
I
F
25
I
= 30 A
F
I
= 15 A
) A
(
M R R
I
F
20
15
10
5
0
100 150 200 250 300 350 400 450 500
/dt (A/µs)
di
F
Fig. 7 - Typical Stored Charge vs. dI
(Per Leg)
900
VR= 390V
= 25°C _____
T
J
800
T
= 125°C ----------
J
700
IF15 A
600
) s µ
/ A
(
500
t d /
M
)
400
c e
r
(
i d
300
200
100
0
100 150 200 250 300 350 400 450 500
diF/dt (A/µs)
I
F
= 60 A
I
F
F
= 30 A
/dt
Fig. 6 - Typical Recovery Current vs. dI
/dt (Per Leg)
F
Fig. 8 - Typical dI
(Per Leg)
/dt vs. dIF/dt
(rec)M
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Document Number: 93090
4 Revision: 25-Aug-08
HFA30PB120
HEXFRED
®
Ultrafast Soft Recovery Diode, 30 A
V
= 200 V
R
0.01 Ω
L = 70 µH
(3)
a
(2)
D
IRFP250
S
t
rr
I
RRM
(4) Q and I
(5) dI current during t
dIF/dt
adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
dIF/dt
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
(2) I
- peak reverse recovery current
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative going I through 0.75 I extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
t
Vishay High Power Products
D.U.T.
t
b
(4)
Q
rr
0.5 I
RRM
(rec)M
Q
=
rr
(5)
/dt
trr x I
RRM
2
portion of t
b
rr
dI
0.75 I
RRM
- area under curve defined by t
rr
RRM
/dt - peak rate of change of
(rec)M
rr
L = 100 µH
I
L(PK)
High-speed
Freewheel
diode
switch
V
= 50 V
d
+
Decay
time
V
(AVAL)
V
R(RATED)
Current monitor
D.U.T.
R
g
= 25 Ω
Fig. 11 - Avalanche Test Circuit and Waveforms
Document Number: 93090 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 25-Aug-08 5
HFA30PB120
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
HF A 30 PB 120 -
1 - HEXFRED® family
2 - Process designator: A = Electron irradiated
3
4
5
6
HEXFRED
®
Ultrafast Soft Recovery Diode, 30 A
51324
6
B = Platinum diffused
- Current rating (30 = 30 A)
- Package outline (PB = TO-247, 2 pins)
- Voltage rating (120 = 1200 V)
- None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95253
Part marking information http://www.vishay.com/doc?95255
SPICE model http://www.vishay.com/doc?95358
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Document Number: 93090
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1
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