Vishay HFA280NJ60CPBF Data Sheet

HFA280NJ60CPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 280 A

TO-2 44

PRODUCT SUMMARY

I

F(AV)

V

R

I

at T

F(DC)

C

Lug
terminal
anode 1

Base common

cathode

280 A

600 V

149 A at 100 °C

HEXFRED

Lug
terminal
anode 2

®

FEATURES

• Very low Qrr and t

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced snubbing

DESCRIPTION

HEXFRED® diodes are optimized to reduce losses and

EMI/RFI in high frequency power conditioning systems. An

extensive characterization of the recovery behavior for

different values of current, temperature and dI/dt simplifies

the calculations of losses in the operating conditions. The

softness of the recovery eliminates the need for a snubber in

most applications. These devices are ideally suited for

power converters, motors drives and other applications

where switching losses are significant portion of the total

losses.

rr

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current I

Single pulse forward current I

Non-repetitive avalanche energy E

Maximum power dissipation P

Operating junction and storage
temperature range

T

J

F

FSM

AS

, T

R

TC = 25 °C 292

= 100 °C 149

C

Limited by junction temperature 600

L = 100 µH, duty cycle limited by maximum T

D

TC = 25 °C 657

T

= 100 °C 263

C

Stg

J

600 V

AT

2.2 mJ

W

- 55 to + 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

Junction capacitance C

Series inductance L

V

BR

FM

I

RM

T

S

IR = 100 µA 600 - -

IF = 105 A

I

= 210 A - 1.53 2.1

F

I

= 105 A, TJ = 125 °C - 1.22 1.64

F

TJ = 125 °C, VR = 600 V See fig. 2 - 2.4 8 mA

VR = 200 V See fig. 3 - 280 400 pF

From top of terminal hole to mounting plane - 5.0 - nH

See fig. 1

- 1.33 1.8

V

Document Number: 94067 For technical questions, contact: [e-mail]
Revision: 01-Aug-08 1

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HFA280NJ60CPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 280 A

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5 t

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of recovery current
See fig. 8

dI

rr

I

RRM

Q

(rec)M

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Thermal resistance, junction to case

Typical thermal resistance, case to heatsink R

Weight

Mounting torque

Terminal torque 30 (3.4) - 40 (4.6)

Vertical pull --80

2" lever pull --35

Note

(1)

Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 to 10 lbf ⋅ in steps until desired or maximum torque limits are reached.

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 39 -

= 25 °C

J

T

= 125 °C - 180 270

J

-92140

TJ = 25 °C - 9.3 17

= 105 A

I

R

J

, T

thJC

thCS

F

dI
V

Stg

/dt = 200 A/µs

F

= 200 V

R

- 55 - 150 °C

- - 0.19

-0.10-

T

= 125 °C - 16 30

J

TJ = 25 °C - 490 1200

rr

T

= 125 °C - 1400 4000

J

= 25 °C - 290 -

T

J

/dt

T

= 125 °C - 200 -

J

per leg

per module - - 0.095

-68- g

-2.4-oz.

(1)

30 (3.4) - 40 (4.6)

center hole 12 (1.4) - 18 (2.1)

A/µs

°C/W

K/W

N ⋅ m

(lbf ⋅ in)

lbf ⋅ in

nsT

A

nC

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Document Number: 94067

2 Revision: 01-Aug-08

HFA280NJ60CPbF

1000

100

10

1

- Instantaneous Forward Current (A)

F

I

0.2 3.21.7

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current (Per Leg)

Ultrafast Soft Recovery

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

0.7 2.7

1.2 2.2

VFM - Forward Voltage Drop (V)

10 000

HEXFRED

®

Diode, 280 A

Vishay High Power Products

10 000

1000

100

10

- Reverse Current (µA)

R

I

1

100

Fig. 2 - Typical Reverse Current vs.

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

200 600

400

500300

VR - Reverse Voltage (V)

Reverse Voltage (Per Leg)

1000

- Junction Capacitance (pF)

T

C

100

1 10 100 1000

TJ = 25 °C

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)

160

140

120

Maximum Allowable

Case Temperature (°C)

100

80

60

40

20

0

0 100 200 300 350

D = 0.50

I

- DC Forward Current (A)

F(AV)

DC

150 25050

Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current (Per Leg)

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Revision: 01-Aug-08 3

HFA280NJ60CPbF

Vishay High Power Products

300

250

200

150

(ns)

rr

t

100

50

0

100

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)

70

TJ = 125 °C
TJ = 25 °C

60

50

IF = 200 A

= 140 A

I

F

40

(A)

RRM

I

= 50 A

I

F

30

20

TJ = 125 °C
TJ = 25 °C

dIF/dt (A/µs)

HEXFRED

®

Ultrafast Soft Recovery

Diode, 280 A

IF = 200 A

= 140 A

I

F

= 50 A

I

F

1000

5000

TJ = 125 °C
T

= 25 °C

0

100

J

IF = 200 A

= 140 A

I

F

= 50 A

I

F

(nC)

rr

Q

4000

3000

2000

1000

dIF/dt (A/µs)

Fig. 7 - Typical Stored Charge vs. dI

10 000

200 A
140 A
50 A

1000

/dt (A/µs)

(rec)M

dI

1000

/dt (Per Leg)

F

10

0

100

dIF/dt (A/µs)

Fig. 6 - Typical Recovery Current vs. dI

1

0.1

0.01

- Thermal Response

thJC

Z

0.001

0.00001 0.0001 0.001 0.01 0.1

Single pulse

(thermal response)

Fig. 9 - Maximum Thermal Impedance Z

1000

/dt (Per Leg)

F

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

t1 - Rectangular Pulse Duration (s)

100

100

Fig. 8 - Typical dI

Characteristics (Per Leg)

thJC

TJ = 125 °C
TJ = 25 °C

dIF/dt (A/µs)

/dt vs. dIF/dt (Per Leg)

(rec)M

1

1000

10

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Document Number: 94067

4 Revision: 01-Aug-08

HFA280NJ60CPbF

HEXFRED

Ultrafast Soft Recovery

Diode, 280 A

L = 70 µH

dIF/dt

adjust

Fig. 10 - Reverse Recovery Parameter Test Circuit

I

F

0

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

- peak reverse recovery current

(2) I

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

Fig. 11 - Reverse Recovery Waveform and Definitions

dIF/dt

RRM

G

V

= 200 V

R

®

Vishay High Power Products

0.01 Ω

D.U.T.

D

IRFP250

S

(3)

t

rr

t

a

(2)

I

RRM

t

b

(4)

Q

rr

0.5 I

RRM

dI

/dt

(rec)M

0.75 I

RRM

(4) Q

- area under curve defined by t

rr

and I

RRM

trr x I

(5) dI
current during t

=

Q

rr

/dt - peak rate of change of

(rec)M

portion of t

b

(5)

rr

RRM

2

rr

L = 100 µH

I

L(PK)

High-speed

Freewheel

diode

switch

V

= 50 V

d

+

Decay

time

V

(AVAL)

V

R(RATED)

D.U.T.

Current
monitor

R

g

= 25 Ω

Fig. 12 - Avalanche Test Circuit and Waveforms

Document Number: 94067 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Aug-08 5

HFA280NJ60CPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 280 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95021

HFA 280 NJ 60 C PbF

51324

- HEXFRED® family, electron irradiated

1

2 - Average current rating

3 - NJ = TO-224

- Voltage rating (600 V)

4

- C = Common cathode

5

- Lead (Pb)-free

6

LINKS TO RELATED DOCUMENTS

6

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Document Number: 94067

DIMENSIONS in millimeters (inches)

3

2

3

1

Ø 5.2 (Ø 0.20)

9.6 (0.37) MIN.

93 (3.66) MAX.

¼" - 20 UNC

80 (3.15)

13 (0.51)

35 (1.37) REF.

7 (0.27)
6 (0.23)

17.5 (0.69)

16.5 (0.65)

21 (0.82)
20 (0.78)

Ø 7.2 (Ø 0.28)

(2 places)

12.6 (0.5)

Outline Dimensions

Vishay Semiconductors

TO-244

Document Number: 95021 For technical questions, contact: [e-mail]
Revision: 25-Jun-07 1

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