Vishay HFA25TB60SPbF User Manual

HFA25TB60SPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 25 A

Base

cathode

2

1

N/C

D2PA K

PRODUCT SUMMARY

V

R

V

at 25 A at 25 °C 1.7 V

F

I

F(AV)

(typical) 23 ns

t

rr

T

(maximum) 150 °C

J

Q

(typical) 112 nC

rr

dI

/dt (typical) 250 A/µs

(rec)M

I

RRM

3

Anode

600 V

25 A

10 A

HEXFRED

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Lead (Pb)-free

• Designed and qualified for Q101 level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA25TB60S is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 25 A continuous current, the
HFA25TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
t

portion of recovery. The HEXFRED features combine to

b

offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25TB60S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

®

RRM

rr

Available

RoHS*

COMPLIANT

®

product line features

RRM

) and

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94066 For technical questions, contact: [e-mail]
Revision: 25-Jul-08 1

J

F

FSM

FRM

, T

R

TC = 100 °C 25

D

TC = 25 °C 125

T

= 100 °C 50

C

Stg

600 V

225

100

W

- 55 to + 150 °C

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ASingle pulse forward current I

HFA25TB60SPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 25 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

dI

dI

rr1

t

rr2

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr

rr1

rr2

Reverse recovery time
See fig. 5

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of fall recovery
current during t

b

See fig. 8

IR = 100 µA 600 - -

IF = 25 A

I

= 50 A - 1.5 2.0

F

I

= 25 A, TJ = 125 °C - 1.3 1.7

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 600 2000

J

VR = 200 V See fig. 3 - 55 100 pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

See fig. 1

See fig. 2

-1.31.7

-1.520

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 23 -

TJ = 25 °C

-5075

TJ = 125 °C - 105 160

TJ = 25 °C - 4.5 10

TJ = 125 °C - 8.0 15

TJ = 25 °C - 112 375

TJ = 125 °C - 420 1200

I

= 25 A

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

/dt1 TJ = 25 °C - 250 -

/dt2 TJ = 125 °C - 160 -

V

µA

nst

A

nC

A/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

Weight

Marking device Case style D

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2 Revision: 25-Jul-08

0.063" from case (1.6 mm) for 10 s - - 300 °C

lead

--1.0

R

thJC

Typical socket mount - - 80

R

thJA

-2.0- g

-0.07- oz.

2

PAK HFA25TB60S

Document Number: 94066

K/W

A

A

HFA25TB60SPbF

100

10

HEXFRED

®

Ultrafast Soft Recovery Diode, 25 A

10000

1000

100

10

1

0.1

0.01
0 100 200 300 400 500 600

T = 150°C

J

T = 125°C

J

T = 25°C

J

1000

A

Vishay High Power Products

T = 150°C

J

T = 125°C

J

T = 25°C

J

Reverse Voltage - V (V)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage

R

1

0.6 1.0 1.4 1.8 2.2 2.6

Forward Voltage Drop - V (V)

FM

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

10

thJC

1

D = 0.50

0.20

0.10

0.1

0.05

0.02

Thermal Response (Z )

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

A

t , Rectangular Pulse Duration (sec)

1

T = 25°C

J

100

10

1 10 100 100

Reverse Voltage - V (V)

R

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

P

DM

t

1

t

2

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

0

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

Document Number: 94066 For technical questions, contact: [e-mail]
Revision: 25-Jul-08 3

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HFA25TB60SPbF

A

A

A

A

Vishay High Power Products

140

120

100

80

60

40

20

I = 50 A

F

I = 25 A

F

I = 10 A

F

di /dt - (A/µs)

f

V = 200V

R

T = 125°C

J

T = 25°C

J

HEXFRED

®

Ultrafast Soft Recovery Diode, 25 A

1400

V = 200V

R

T = 125°C

J

T = 25°C

J

1200

1000

0001001

800

600

400

200

I = 50 A

F

I = 25 A

F

I = 10 A

F

0

di /dt - (A/µs)

f

0001001

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt

30

V = 200V

R

T = 125°C

J

T = 25°C

J

25

I = 50 A

F

20

I = 25 A

F

I = 10 A

F

15

10

5

0

di /dt - (A/µs)

f

Fig. 7 - Typical Stored Charge vs. dI

10000

V = 20 0V

R

T = 125°C

J

T = 25°C

J

I = 50 A

100

F

I = 25 A

F

I = 10 A

F

di /dt - (A/µs)

f

1000

0001001

/dt

F

0001001

Fig. 6 - Typical Recovery Current vs. dI

/dt

F

Fig. 8 - Typical dI

/dt vs. dIF/dt

(rec)M

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4 Revision: 25-Jul-08

Document Number: 94066

HFA25TB60SPbF

HEXFRED

®

Ultrafast Soft Recovery Diode, 25 A

V

= 200 V

R

0.01 Ω

L = 70 µH

(3)

a

(2)

D

IRFP250

S

t

rr

I

RRM

(4) Q
and I

(5) dI
current during t

dIF/dt

adjust

G

Fig. 9 - Reverse Recovery Parameter Test Circuit

I

F

0

dIF/dt

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

- peak reverse recovery current

(2) I

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

RRM

Fig. 10 - Reverse Recovery Waveform and Definitions

t

Vishay High Power Products

D.U.T.

t

b

(4)

Q

rr

0.5 I

RRM

(rec)M

Q

rr

(5)

/dt

trr x I

=

portion of t

b

RRM

2

rr

dI

0.75 I

RRM

- area under curve defined by t

rr

RRM

/dt - peak rate of change of

(rec)M

rr

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95046

Part marking information http://www.vishay.com/doc?95044

Packaging information http://www.vishay.com/doc?95032

Document Number: 94066 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 25-Jul-08 5

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1