Vishay HFA25TB60PbF User Manual

HFA25TB60PbF
Ultrafast Soft Recovery Diode, 25 A
Base
cathode
1
Cathode
TO-220AC
PRODUCT SUMMARY
VR 600 V
V
at 25 A at 25 °C 1.7 V
F
I
F(AV)
t
(typical) 23 ns
rr
T
(maximum) 150 °C
J
(typical) 112 nC
Q
rr
dI
/dt (typical) 250 A/µs
(rec)M
I
10 A
RRM
Anode
HEXFRED
®
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
RRM
rr
• Specified at operating conditions
• Lead (Pb)-free
• Designed and qualified for industrial level
Available
RoHS*
COMPLIANT
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
3
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA25TB60 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 25 A continuous current, the HFA25TB60 is especially well suited for use as the
25 A
companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED extremely low values of peak recovery current (I does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
®
product line features
) and
RRM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94065 For technical questions, contact: diodes-tech@vishay.com Revision: 25-Jul-08 1
J
F
FSM
FRM
, T
R
TC = 100 °C 25
D
TC = 25 °C 125
T
= 100 °C 50
C
Stg
600 V
225
100
W
- 55 to + 150 °C
www.vishay.com
ASingle pulse forward current I
HFA25TB60PbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 25 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage
Maximum forward voltage V
Maximum reverse leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
dI
dI
rr1
t
rr2
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr
rr1
rr2
Reverse recovery time See fig. 5, 6 and 16
Peak recovery current See fig. 7 and 8
Reverse recovery charge See fig. 9 and 10
Peak rate of fall of recover curent during t
b
See fig. 11 and 12
IR = 100 µA 600 - -
IF = 25 A
I
= 50 A - 1.5 2.0
F
I
= 25 A, TJ = 125 °C - 1.3 1.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 600 2000
J
VR = 200 V See fig. 3 - 55 100 pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
See fig. 1
See fig. 2
-1.31.7
-1.520
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 23 -
TJ = 25 °C
-5075
TJ = 125 °C - 105 160
TJ = 25 °C - 4.5 10
I
TJ = 125 °C - 8.0 15
TJ = 25 °C - 112 375
TJ = 125 °C - 420 1200
= 25 A
F
/dt = 200 A/µs
dI
F
= 200 V
V
R
/dt1 TJ = 25 °C - 250 -
/dt2 TJ = 125 °C - 160 -
V
µA
nst
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Thermal resistance, case to heatsink
lead
R
thJC
R
thJA
R
thCS
Weight
Mounting torque
Marking device Case style TO-220AC HFA25TB60
www.vishay.com For technical questions, contact: diodes-tech@vishay.com 2 Revision: 25-Jul-08
0.063” from case (1.6 mm) for 10 s - - 300 °C
--1.0
Typical socket mount - - 80
K/W
Mounting surface, flat, smooth and greased - 0.5 -
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm (lbf · in)
Document Number: 94065
A
HFA25TB60PbF
100
HEXFRED
®
Vishay High Power Products
Ultrafast Soft Recovery Diode, 25 A
10000
T = 150°C
1000
100
10
1
0.1
T = 150°C
J
T = 125°C
J
T = 25°C
10
J
0.01
1000
A
J
T = 125°C
J
T = 25°C
J
0 100 200 300 400 500 600
Reverse Voltage - V (V)
R
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1
0.6 1.0 1.4 1.8 2.2 2.6
Forward Voltage Drop - V (V)
FM
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
10
thJC
(Z )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
Thermal Response
0.01
0.01
0.00001 0.0001 0.001 0.01 0. 1 1
SINGLE PULSE
(THERMAL RESPONSE)
Fig. 4 - Maximum Thermal Impedance Z
100
A
10
t , Rectangular Pulse Duration (sec)
1
T = 25°C
J
1101001000
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty f actor D = t / t
2. Peak T =P x Z + T
Characteristics
thJC
1 2
J DM thJC C
Document Number: 94065 For technical questions, contact: diodes-tech@vishay.com Revision: 25-Jul-08 3
www.vishay.com
HFA25TB60PbF
A
A
A
A
Vishay High Power Products
140
120
100
80
trr - (ns)
60
40
20
I = 50A
F
I = 25A
F
I = 10A
F
di /dt - (A/µs)
f
V = 200V
R
T = 125°C
J
T = 25°C
J
HEXFRED
®
Ultrafast Soft Recovery Diode, 25 A
1400
V = 200V
R
T = 125°C
J
T = 25°C
J
1200
1000
0001001
800
600
400
200
I = 50A
F
I = 25A
F
I = 10A
F
0
di /dt - (A/µs)
f
0001001
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
30
V = 200V
R
T = 12 5°C
J
T = 25 °C
J
25
I = 50A
F
20
I = 25A
F
I = 10A
F
15
10
5
0
di /dt - (A/µs)
f
0001001
Fig. 7 - Typical Stored Charge vs. dI
10000
V = 20 0V
R
T = 125°C
J
T = 25°C
J
I = 50A
100
F
I = 25A
F
I = 10A
F
di /dt - (A/µs)
f
1000
F
/dt
0001001
Fig. 6 - Typical Recovery Current vs. dI
/dt
F
Fig. 8 - Typical dI
/dt vs. dIF/dt
(rec)M
www.vishay.com For technical questions, contact: diodes-tech@vishay.com 4 Revision: 25-Jul-08
Document Number: 94065
HFA25TB60PbF
HEXFRED
®
Ultrafast Soft Recovery Diode, 25 A
V
= 200 V
R
0.01 Ω
L = 70 µH
(3)
a
(2)
D
IRFP250
S
t
rr
I
RRM
(4) Q and I
(5) dI current during t
dIF/dt
adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
dIF/dt
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
(2) I
- peak reverse recovery current
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative going I through 0.75 I extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
t
Vishay High Power Products
D.U.T.
t
b
(4)
Q
rr
0.5 I
RRM
(rec)M
Q
=
rr
(5)
/dt
trr x I
RRM
2
portion of t
b
rr
dI
0.75 I
RRM
- area under curve defined by t
rr
RRM
/dt - peak rate of change of
(rec)M
rr
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95221
Part marking information http://www.vishay.com/doc?95224
Document Number: 94065 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 25-Jul-08 5
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1
Loading...