Vishay HFA25PB60PbF User Manual
HFA25PB60PbF
Vishay High Power Products
Ultrafast Soft Recovery Diode, 25 A
Cathode
to base
4
2
1
Cathode
TO-247AC modified
PRODUCT SUMMARY
VR 600 V
V
at 25 A at 25 °C 1.7 V
F
I
F(AV)
t
(typical) 23 ns
rr
(maximum) 150 °C
T
J
Q
(typical) 112 nC
rr
dI
/dt (typical) 250 A/µs
(rec)M
I
10 A
RRM
Anode
2
HEXFRED
®
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
RRM
rr
• Specified at operating conditions
Pb-free
Available
RoHS*
COMPLIANT
• Lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
3
• Reduced parts count
DESCRIPTION
HFA25PB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 25 A continuous current, the
HFA25PB60 is especially well suited for use as the
25 A
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25PB60 is ideally suited
for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
®
product line features
) and
RRM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94064 For technical questions, contact: diodes-tech@vishay.com
Revision: 25-Jul-08 1
J
F
FSM
FRM
, T
R
TC = 100 °C 25
D
TC = 25 °C 151
T
= 100 °C 60
C
Stg
600 V
225
100
W
- 55 to + 150 °C
www.vishay.com
ASingle pulse forward current I
HFA25PB60PbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 25 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
dI
dI
rr1
t
rr2
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr
rr1
rr2
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6, 10
Reverse recovery charge
See fig. 7, 10
Peak rate of fall of recovery
current during t
b
See fig. 8, 10
IR = 100 µA 600 - -
IF = 25 A
I
= 50 A - 1.5 2.0
F
I
= 25 A, TJ = 125 °C - 1.3 1.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 600 2000
J
VR = 200 V See fig. 3 - 55 100 pF
T
Measured lead to lead 5 mm from package body - 12 - nH
S
See fig. 1
See fig. 2
-1.31.7
-1.520
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 23 -
TJ = 25 °C
-5075
TJ = 125 °C - 105 160
TJ = 25 °C - 4.5 10
TJ = 125 °C - 8.0 15
TJ = 25 °C - 112 375
TJ = 125 °C - 420 1200
I
= 25 A
F
/dt = 200 A/µs
dI
F
V
= 200 V
R
/dt1 TJ = 25 °C - 250 -
/dt2 TJ = 125 °C - 160 -
V
µA
nst
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
lead
R
thJC
R
thJA
R
thCS
Weight
Mounting torque
Marking device Case style TO-247AC modified (JEDEC) HFA25PB60
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
2 Revision: 25-Jul-08
0.063" from case (1.6 mm) for 10 s - - 300 °C
- - 0.83
Typical socket mount - - 40
Mounting surface, flat, smooth and greased - 0.25 -
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
Document Number: 94064
K/W
kgf · cm
(lbf · in)
HFA25PB60PbF
100
HEXFRED
®
Vishay High Power Products
Ultrafast Soft Recovery Diode, 25 A
10000
T = 150°C
1000
100
10
1
0.1
T = 150°C
J
T = 125°C
J
T = 25°C
10
J
0.01
1000
A
J
T = 125°C
J
T = 25°C
J
0 100 200 300 400 500 600
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
1
0.6 1.0 1.4 1.8 2.2 2.6
Forward Voltage Drop - V (V)
FM
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous
Forward Current
1
D = 0.50
thJC
(Z )
0.20
0.10
0.1
0.05
0.02
Thermal Response
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
T = 25°C
J
100
10
1 10 100 1000
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJC C
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
Document Number: 94064 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 25-Jul-08 3
Loading...