Vishay HFA25PB60 User Manual

HFA25PB60

Vishay High Power Products

Ultrafast Soft Recovery Diode, 25 A

Cathode

to base

4

2

1

Cathode

TO-247AC modified

PRODUCT SUMMARY

VR 600 V

at 25 A at 25 °C 1.7 V

V

F

I

F(AV)

t

(typical) 23 ns

rr

T

(maximum) 150 °C

J

(typical) 112 nC

Q

rr

dI

/dt (typical) 250 A/µs

(rec)M

I

10 A

RRM

Anode

2

HEXFRED

®

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

RRM

rr

• Specified at operating conditions

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

3

25 A

DESCRIPTION

HFA25PB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 25 A continuous current, the
HFA25PB60 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
t

portion of recovery. The HEXFRED features combine to

b

offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25PB60 is ideally suited
for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.

®

product line features

RRM

) and

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 93084 For technical questions, contact: [e-mail]
Revision: 30-Jul-08 1

J

F

FSM

FRM

, T

R

TC = 100 °C 25

D

TC = 25 °C 151

T

= 100 °C 60

C

Stg

600 V

225

100

W

- 55 to + 150 °C

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ASingle pulse forward current I

HFA25PB60

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 25 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

dI

dI

rr1

t

rr2

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr

rr1

rr2

Reverse recovery time
See fig. 5, 10

Peak recovery current
See fig. 6, 10

Reverse recovery charge
See fig. 7, 10

Peak rate of fall of recovery
current during t

b

See fig. 8, 10

IR = 100 µA 600 - -

IF = 25 A

I

= 50 A - 1.5 2.0

F

I

= 25 A, TJ = 125 °C - 1.3 1.7

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 600 2000

J

VR = 200 V See fig. 3 - 55 100 pF

T

Measured lead to lead 5 mm from package body - 12 - nH

S

See fig. 1

See fig. 2

-1.31.7

-1.520

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 23 -

TJ = 25 °C

-5075

TJ = 125 °C - 105 160

TJ = 25 °C - 4.5 10

TJ = 125 °C - 8.0 15

TJ = 25 °C - 112 375

TJ = 125 °C - 420 1200

I

= 25 A

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

/dt1 TJ = 25 °C - 250 -

/dt2 TJ = 125 °C - 160 -

V

µA

nst

A

nC

A/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

Thermal resistance,
case to heatsink

lead

R

thJC

R

thJA

R

thCS

Weight

Mounting torque

Marking device Case style TO-247AC modified (JEDEC) HFA25PB60

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2 Revision: 30-Jul-08

0.063" from case (1.6 mm) for 10 s - - 300 °C

- - 0.83

Typical socket mount - - 40

Mounting surface, flat, smooth and greased - 0.25 -

-6.0- g

-0.21- oz.

6.0

(5.0)

-

12

(10)

Document Number: 93084

K/W

kgf · cm
(lbf · in)

HFA25PB60

100

HEXFRED

®

Vishay High Power Products

Ultrafast Soft Recovery Diode, 25 A

10000

T = 150°C

1000

100

10

1

0.1

T = 150°C

J

T = 125°C

J

T = 25°C

10

J

0.01

1000

A

J

T = 125°C

J

T = 25°C

J

0 100 200 300 400 500 600

Reverse Voltage - V (V)

R

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage

1

0.6 1.0 1.4 1.8 2.2 2.6

Forward Voltage Drop - V (V)

FM

Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous

Forward Current

1

D = 0.50

thJC

(Z )

0.20

0.10

0.1

0.05

0.02

Thermal Response

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Fig. 4 - Maximum Thermal Impedance Z

T = 25°C

J

100

10

1 10 100 1000

Reverse Voltage - V (V)

R

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

P

DM

t

1

t

2

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

Characteristics

thJC

1 2

J DM thJC C

Document Number: 93084 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 30-Jul-08 3