Vishay HFA210NJ60CPBF Data Sheet

l

2

HFA210NJ60CPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 210 A

TO-244

PRODUCT SUMMARY

I

F(AV)

V

R

I

at T

F(DC)

C

Lug
terminal
anode 1

Base common

cathode

210 A

600 V

120 A at 100 °C

HEXFRED

FEATURES

Lug
termina
anode

• Very low Qrr and t

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced snubbing

DESCRIPTION

HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for power converters, motors drives and other
applications where switching losses are significant portion of
the total losses.

®

rr

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current I

Single pulse forward current I

Non-repetitive avalanche energy E

Maximum power dissipation P

Operating junction and storage
temperature range

T

J

F

FSM

AS

, T

R

TC = 25 °C 235

= 100 °C 120

C

Limited by junction temperature 600

L = 100 µH, duty cycle limited by maximum T

D

Stg

TC = 25 °C 463

T

= 100 °C 185

C

J

600 V

AT

2.2 mJ

W

- 55 to + 150 °C

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse leakage current I

Junction capacitance C

Series inductance L

V

BR

FM

RM

T

S

IR = 100 µA 600 - -

IF = 105 A

I

= 210 A - 1.6 2.25

F

I

= 105 A, TJ = 125 °C - 1.3 1.56

F

TJ = 125 °C, VR = 480 V See fig. 2 - 1.8 6.0 mA

VR = 200 V See fig. 3 - 200 300 pF

From top of terminal hole to mounting plane - 6.0 - nH

See fig. 1

- 1.38 1.9

V

Document Number: 94062 For technical questions, contact: [e-mail]
Revision: 01-Aug-08 1

www.vishay.com

HFA210NJ60CPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 210 A

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of recovery current
See fig. 8

dI

t

I

RRM

Q

(rec)M

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Thermal resistance, junction to case

Typical thermal resistance, case to heatsink R

Weight

Mounting torque

Mounting torque center hole 12 (1.4) - 18 (2.1)

Terminal torque 30 (3.4) - 40 (4.6)

Vertical pull --80

2" lever pull --35

Note

(1)

Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 to 10 lbf ⋅ in steps until desired or maximum torque limits are reached

(1)

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 35 -

rr

= 25 °C

J

T

= 125 °C - 160 240

J

- 90 140

TJ = 25 °C - 10 18

= 105 A

I

T

= 125 °C - 15 30

J

TJ = 25 °C - 450 1300

rr

T

= 125 °C - 1200 3600

J

= 25 °C - 310 -

T

J

/dt

T

= 125 °C - 240 -

J

per leg

per module - - 0.135

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

, T

J

Stg

R

thJC

thCS

- 55 - 150 °C

- - 0.27

-0.10-

-68- g

-2.4-oz.

30 (3.4) - 40 (4.6)

°C/W

K/W

N ⋅ m

(lbf ⋅ in)

lbf ⋅ in

nsT

A

nC

A/µs

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94062

2 Revision: 01-Aug-08

HFA210NJ60CPbF

1000

100

10

1

- Instantaneous Forward Current (A)

F

I

0.2 3.21.2

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current (Per Leg)

10 000

1000

- Reverse Current (µA)

R

I

100

0.1

TJ = 150 °C

10

1

100

Fig. 2 - Typical Reverse Current vs.

Ultrafast Soft Recovery

TJ = 150 °C
T

= 125 °C

J

= 25 °C

T

J

0.7 2.2

VFM - Forward Voltage Drop (V)

200 400 500 600300

VR - Reverse Voltage (V)

Reverse Voltage (Per Leg)

1.7

TJ = 125 °C

TJ = 25 °C

2.7

HEXFRED

®

Diode, 210 A

Vishay High Power Products

10 000

1000

TJ = 25 °C

100

- Junction Capacitance (pF)

T

C

10

1 10 100 1000

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage (Per Leg)

160

140

120

100

80

60

Maximum Allowable

40

Case Temperature (°C)

20

0

0 100 250

50 150 200

I

- DC Forward Current (A)

F(AV)

Fig. 4 - Maximum Allowable Case Temperature vs.

DC Forward Current (Per Leg)

DC

240

200 A, 125 °C

200

100

105 A, 125 °C

40 A, 125 °C

200 A, 25 °C

105 A, 25 °C

40 A, 25 °C

1000

(ns)

rr

t

160

120

80

40

dIF/dt (A/µs)

Fig. 5 - Typical Reverse Recovery Time vs. dI

/dt (Per Leg)

F

Document Number: 94062 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Aug-08 3