Vishay HFA210NJ60CPBF Data Sheet

l

2

HFA210NJ60CPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 210 A

TO-244

PRODUCT SUMMARY

I

F(AV)

V

R

I

at T

F(DC)

C

Lug
terminal
anode 1

Base common

cathode

210 A

600 V

120 A at 100 °C

HEXFRED

FEATURES

Lug
termina
anode

• Very low Qrr and t

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced snubbing

DESCRIPTION

HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for power converters, motors drives and other
applications where switching losses are significant portion of
the total losses.

®

rr

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current I

Single pulse forward current I

Non-repetitive avalanche energy E

Maximum power dissipation P

Operating junction and storage
temperature range

T

J

F

FSM

AS

, T

R

TC = 25 °C 235

= 100 °C 120

C

Limited by junction temperature 600

L = 100 µH, duty cycle limited by maximum T

D

Stg

TC = 25 °C 463

T

= 100 °C 185

C

J

600 V

AT

2.2 mJ

W

- 55 to + 150 °C

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse leakage current I

Junction capacitance C

Series inductance L

V

BR

FM

RM

T

S

IR = 100 µA 600 - -

IF = 105 A

I

= 210 A - 1.6 2.25

F

I

= 105 A, TJ = 125 °C - 1.3 1.56

F

TJ = 125 °C, VR = 480 V See fig. 2 - 1.8 6.0 mA

VR = 200 V See fig. 3 - 200 300 pF

From top of terminal hole to mounting plane - 6.0 - nH

See fig. 1

- 1.38 1.9

V

Document Number: 94062 For technical questions, contact: [e-mail]
Revision: 01-Aug-08 1

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HFA210NJ60CPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 210 A

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of recovery current
See fig. 8

dI

t

I

RRM

Q

(rec)M

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Thermal resistance, junction to case

Typical thermal resistance, case to heatsink R

Weight

Mounting torque

Mounting torque center hole 12 (1.4) - 18 (2.1)

Terminal torque 30 (3.4) - 40 (4.6)

Vertical pull --80

2" lever pull --35

Note

(1)

Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 to 10 lbf ⋅ in steps until desired or maximum torque limits are reached

(1)

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 35 -

rr

= 25 °C

J

T

= 125 °C - 160 240

J

- 90 140

TJ = 25 °C - 10 18

= 105 A

I

T

= 125 °C - 15 30

J

TJ = 25 °C - 450 1300

rr

T

= 125 °C - 1200 3600

J

= 25 °C - 310 -

T

J

/dt

T

= 125 °C - 240 -

J

per leg

per module - - 0.135

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

, T

J

Stg

R

thJC

thCS

- 55 - 150 °C

- - 0.27

-0.10-

-68- g

-2.4-oz.

30 (3.4) - 40 (4.6)

°C/W

K/W

N ⋅ m

(lbf ⋅ in)

lbf ⋅ in

nsT

A

nC

A/µs

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Document Number: 94062

2 Revision: 01-Aug-08

HFA210NJ60CPbF

1000

100

10

1

- Instantaneous Forward Current (A)

F

I

0.2 3.21.2

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current (Per Leg)

10 000

1000

- Reverse Current (µA)

R

I

100

0.1

TJ = 150 °C

10

1

100

Fig. 2 - Typical Reverse Current vs.

Ultrafast Soft Recovery

TJ = 150 °C
T

= 125 °C

J

= 25 °C

T

J

0.7 2.2

VFM - Forward Voltage Drop (V)

200 400 500 600300

VR - Reverse Voltage (V)

Reverse Voltage (Per Leg)

1.7

TJ = 125 °C

TJ = 25 °C

2.7

HEXFRED

®

Diode, 210 A

Vishay High Power Products

10 000

1000

TJ = 25 °C

100

- Junction Capacitance (pF)

T

C

10

1 10 100 1000

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage (Per Leg)

160

140

120

100

80

60

Maximum Allowable

40

Case Temperature (°C)

20

0

0 100 250

50 150 200

I

- DC Forward Current (A)

F(AV)

Fig. 4 - Maximum Allowable Case Temperature vs.

DC Forward Current (Per Leg)

DC

240

200 A, 125 °C

200

100

105 A, 125 °C

40 A, 125 °C

200 A, 25 °C

105 A, 25 °C

40 A, 25 °C

1000

(ns)

rr

t

160

120

80

40

dIF/dt (A/µs)

Fig. 5 - Typical Reverse Recovery Time vs. dI

/dt (Per Leg)

F

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HFA210NJ60CPbF

Vishay High Power Products

100

200 A, 125 °C
105 A, 125 °C

40 A, 125 °C

(A)

10

RRM

I

1

100

dIF/dt (A/µs)

Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)

200 A, 25 °C
105 A, 25 °C

40 A, 25 °C

10 000

HEXFRED

®

Ultrafast Soft Recovery

Diode, 210 A

4000

3500

3000

2500

2000

(nC)

rr

Q

1500

1000

500

1000

0

100

200 A, 125 °C

200 A, 25 °C

105 A, 25 °C

dIF/dt (A/µs)

105 A, 125 °C

40 A, 125 °C

40 A, 25 °C

1000

200 A, 25 °C
105 A, 25 °C

1000

/dt (A/µs)

(rec)M

dI

100

100

40 A, 25 °C

dIF/dt (A/µs)

Fig. 8 - Typical dI

1

0.1

D = 0.50

0.01

- Thermal Response

thJC

Z

0.001

0.00001 0.0001 0.001 0.01 0.1

Single pulse

(thermal response)

D = 0.33
D = 0.25
D = 0.17
D = 0.08

/dt vs. dIF/dt (Per Leg)

(rec)M

t1 - Rectangular Pulse Duration (s)

Fig. 9 - Maximum Thermal Impedance Z

200 A, 125 °C
105 A, 125 °C

40 A, 125 °C

1000

Characteristics (Per Leg)

thJC

1

10

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Document Number: 94062

4 Revision: 01-Aug-08

HFA210NJ60CPbF

HEXFRED

®

Vishay High Power Products

Ultrafast Soft Recovery

Diode, 210 A

V

= 200 V

R

0.01 Ω

L = 70 µH

D.U.T.

dIF/dt

adjust

G

Fig. 10 - Reverse Recovery Parameter Test Circuit

I

F

0

t

D

IRFP250

S

(3)

t

rr

t

a

b

Current
monitor

D.U.T.

dIF/dt

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

(2) I

- peak reverse recovery current

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

RRM

Fig. 11 - Reverse Recovery Waveform and Definitions

L = 100 µH

High-speed

switch

= 25 Ω

R

g

Freewheel

diode

V

= 50 V

d

(2)

I

RRM

(4) Q
and I

(5) dI
current during t

+

(4)

Q

rr

0.5 I

RRM

(rec)M

Q

=

rr

(5)

/dt

trr x I

RRM

2

portion of t

b

I

L(PK)

V

V

R(RATED)

rr

(AVAL)

dI

0.75 I

RRM

- area under curve defined by t

rr

RRM

/dt - peak rate of change of

(rec)M

rr

Decay

time

Fig. 12 - Avalanche Test Circuit and Waveforms

Document Number: 94062 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Aug-08 5

HFA210NJ60CPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 210 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95021

HFA 210 NJ 60 C PbF

51324

1 - HEXFRED® family, electron irradiated

2 - Average current rating

3 - NJ = TO-244

4 - Voltage rating (60 = 600 V)

5 - C = Common cathode

6 - Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

6

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6 Revision: 01-Aug-08

Document Number: 94062

DIMENSIONS in millimeters (inches)

3

2

3

1

Ø 5.2 (Ø 0.20)

9.6 (0.37) MIN.

93 (3.66) MAX.

¼" - 20 UNC

80 (3.15)

13 (0.51)

35 (1.37) REF.

7 (0.27)
6 (0.23)

17.5 (0.69)

16.5 (0.65)

21 (0.82)
20 (0.78)

Ø 7.2 (Ø 0.28)

(2 places)

12.6 (0.5)

Outline Dimensions

Vishay Semiconductors

TO-244

Document Number: 95021 For technical questions, contact: [e-mail]
Revision: 25-Jun-07 1

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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.

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