Datasheet HFA180NH40PBF DataSheet (Vishay)

HFA180NH40PbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 180 A

HALF-PAK (D-67)

PRODUCT SUMMARY

I

F(AV)

V

R

I

at T

F(DC)

C

Lug terminal

anode

Base

cathode

180 A

400 V

200 A at 100 °C

HEXFRED

FEATURES

• Very low Qrr and t

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced snubbing

DESCRIPTION

HEXFRED® diodes are optimized to reduce losses and

EMI/RFI in high frequency power conditioning systems. An

extensive characterization of the recovery behavior for

different values of current, temperature and dI/dt simplifies

the calculations of losses in the operating conditions. The

softness of the recovery eliminates the need for a snubber in

most applications. These devices are ideally suited for

power converters, motors drives and other applications

where switching losses are significant portion of the total

losses.

®

rr

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current I

Single pulse forward current I

Non-repetitive avalanche energy E

Maximum power dissipation P

Operating junction and storage
temperature range

T

J

F

FSM

AS

, T

R

TC = 25 °C 395

= 100 °C 200

C

Limited by junction temperature 1200

L = 100 µH, duty cycle limited by maximum T

TC = 25 °C 657

D

T

= 100 °C 263

C

Stg

J

400 V

AT

1.4 mJ

W

- 55 to + 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

Junction capacitance C

Series inductance L

V

BR

FM

I

RM

S

IR = 100 µA 400 - -

IF = 180 A

I

= 360 A - 1.22 1.8

F

I

= 180 A, TJ = 125 °C - 0.99 1.34

F

TJ = 125 °C, VR = 400 V See fig. 2 - - 4 mA

VR = 200 V See fig. 3 - 370 500 pF

T

From top of terminal hole to mounting plane - 6.0 - nH

See fig. 1

- 1.08 1.46

V

Document Number: 94061 For technical questions, contact: [e-mail]
Revision: 01-Aug-08 1

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HFA180NH40PbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 180 A

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of recovery current
See fig. 8

dI

t

rr

I

RRM

Q

(rec)M

TJ = 25 °C

T

= 125 °C - 280 440

J

TJ = 25 °C - 9 16

= 135 A

I

T

= 125 °C - 18 32

J

TJ = 25 °C - 300 950

rr

T

= 125 °C - 2650 6300

J

= 25 °C - 300 -

T

J

/dt

T

= 125 °C - 290 -

J

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Terminal torque

Case style HALF-PAK module

minimum 3 (26.5)

maximum 4 (35.4)

minimum 3.4 (30)

maximum 5 (44.2)

T

, T

J

Stg

DC operation

R

thJC

R

thCS

See fig. 4

Mounting surface, smooth and greased 0.05

- 90 140

- 55 to 150 °C

0.19
°C/W

30 g

1.06 oz.

N · m

(lbf · in)

ns

A

nC

A/µs

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2 Revision: 01-Aug-08

Document Number: 94061

HFA180NH40PbF

1000

100

10

1

- Instantaneous Forward Current (A)

F

I

0 3.01.0

Fig. 1 - Maximum Forward Voltage Drop vs.

10

1

0.1

0.01

- Reverse Current (µA)

0.001

R

I

0.0001

100

Fig. 2 - Typical Reverse Current vs.

Ultrafast Soft Recovery

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

0.5 2.0

VFM - Forward Voltage Drop (V)

Instantaneous Forward Current

VR - Reverse Voltage (V)

1.5

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

200 400300

Reverse Voltage

2.5

HEXFRED

®

Diode, 180 A

Vishay High Power Products

160

140

120

100

80

60

Case Temperature (°C)

40

20

0

0 100 300 500

I

- DC Forward Current (A)

F(AV)

Maximum Allowable

Fig. 4 - Maximum Allowable Case Temperature vs. DC

Forward Current

400

350

300

250

200

(ns)

rr

t

150

100

50

0

100

Fig. 5 - Typical Reverse Recovery Time vs. dI

DC

200 400

TJ = 125 °C
TJ = 25 °C

dIF/dt (A/µs)

IF = 200 A

= 180 A

I

F

= 70 A

I

F

1000

F

/dt

(A)

RRM

I

Fig. 6 -

80

TJ = 125 °C

70

TJ = 25 °C

60

IF = 200 A

50

= 180 A

I

F

= 70 A

I

F

40

30

20

10

0

100

dIF/dt (A/µs)

- Typical Recovery Current vs. dIF/dt

1000

10 000

1000

- Junction Capacitance (pF)

T

C

100

1 10 100 1000

TJ = 25 °C

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

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Revision: 01-Aug-08 3

HFA180NH40PbF

Vishay High Power Products

6000

TJ = 125 °C
TJ = 25 °C

5000

0

100

IF = 200 A

= 180 A

I

F

= 70 A

I

F

1

dIF/dt (A/µs)

4000

3000

(nC)

rr

Q

2000

1000

Fig. 7 - - Typical Stored Charge vs. dI

HEXFRED

®

Ultrafast Soft Recovery

Diode, 180 A

10 000

200 A
180 A
70 A

1000

/dt (A/µs)

(rec)M

dI

1000

/dt Fig. 8 - Typical dI

F

100

100

dIF/dt (A/µs)

TJ = 125 °C
TJ = 25 °C

/dt vs. dIF/dt

(rec)M

1000

0.1

0.01

- Thermal Response

thJC

Z

0.001

0.00001 0.0001 0.001 0.01 0.1

Single pulse

(thermal response)

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

t1 - Rectangular Pulse Duration (s)

Fig. 9 - Maximum Thermal Impedance Z

Characteristics

thJC

1

10

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Document Number: 94061

4 Revision: 01-Aug-08

HFA180NH40PbF

HEXFRED

Ultrafast Soft Recovery

Diode, 180 A

L = 70 µH

dIF/dt

adjust

Fig. 10 - Reverse Recovery Parameter Test Circuit

I

F

0

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

- peak reverse recovery current

(2) I

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

Fig. 11 - Reverse Recovery Waveform and Definitions

dIF/dt

RRM

G

V

= 200 V

R

®

Vishay High Power Products

0.01 Ω

D.U.T.

D

IRFP250

S

(3)

t

rr

t

a

(2)

I

RRM

t

b

(4)

Q

rr

0.5 I

RRM

dI

/dt

(rec)M

0.75 I

RRM

(4) Q

- area under curve defined by t

rr

and I

RRM

trr x I

(5) dI
current during t

=

Q

rr

/dt - peak rate of change of

(rec)M

portion of t

b

(5)

rr

RRM

2

rr

L = 100 µH

I

L(PK)

High-speed

Freewheel

diode

switch

V

= 50 V

d

+

Decay

time

V

(AVAL)

V

R(RATED)

D.U.T.

Current
monitor

R

g

= 25 Ω

Fig. 12 - Avalanche Test Circuit and Waveforms

Document Number: 94061 For technical questions, contact: [e-mail]

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Revision: 01-Aug-08 5

HFA180NH40PbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 180 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95020

HFA 180 N H 40 PbF

51324

6

1 - HEXFRED® family, electron irradiated

2 - Average current rating

3 - N = Not isolated

4 - H = HALF-PAK

5 - Voltage rating (400 V)

6 - Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

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DIMENSIONS in millimeters (inches)

30 ± 0.05

(1.2 ± 0.002)

5 (0.20)
4 (0.16)

13 (0.51)

24.4 (0.96)

5 (0.196) + 45°

Ø 7.3 ± 0.1 (0.29 ± 0.0039)

17.5 (0.69)

16.5 (0.65)

Ø 4.3

- 0.1

0.0

(Ø 0.169 )

- 0.004

0.000

¼" - 20 UNC

40 MAX. (1.58)

21 (0.82)
20 (0.78)

Outline Dimensions

Vishay Semiconductors

D-67 HALF-PAK

Document Number: 95020 For technical questions, contact: [e-mail]
Revision: 20-May-09 1

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