Vishay HFA16TB120S Data Sheet
HFA16TB120S
TM
BASE
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low
• Very Low Q
• Specified at Operating Conditions
I
RRM
rr
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA16TB120S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120S
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (I
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA16TB120S
is ideally suited for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
CATHODE
1
CATHODE
) and does not
RRM
4
2
ANODE
Bulletin PD -20605 rev. B 11/00
Ultrafast, Soft Recovery DiodeHEXFRED
VR = 1200V
V
(typ.)* = 2.3V
F
I
= 16A
F(AV)
Qrr (typ.)= 260nC
I
(typ.) = 5.8A
RRM
3
2
trr(typ.) = 30ns
di
/dt (typ.)* = 76A/µs
(rec)M
D2 Pak
Absolute Maximum Ratings
V
R
IF @ TC = 100°C Continuous Forward Current 16
I
FSM
I
FRM
PD @ TC = 25°C Maximum Power Dissipation 151
PD @ TC = 100°C Maximum Power Dissipation 60
T
J
T
STG
* 125°C
Parameter Max Units
Cathode-to-Anode Voltage 1200 V
Single Pulse Forward Current 190 A
Maximum Repetitive Forward Current 64
Operating Junction and
Storage Temperature Range
-55 to +150
°C
W
1
HFA16TB120S
Bulletin PD-20605 rev. B 11/00
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
BR
V
FM
I
RM
C
T
L
S
Parameter Min Typ Max Units Test Conditions
Cathode Anode Breakdown Voltage 1200 V IR = 100µA
Max Forward Voltage
2.5 3.0 IF = 16A
3.2 3.93 V IF = 32A
2.3 2.7 IF = 16A, TJ = 125°C
Max Reverse Leakage Current
0.75 20 VR = VR Rated
375 2000 TJ = 125°C, VR = 0.8 x VR Rated
µA
Junction Capacitance 27 40 pF VR = 200V
Series Inductance 8.0 nH
Measured lead to lead 5mm from
package body
See Fig. 1
See Fig. 2
See Fig. 3
D Rated
Dynamic Recovery Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min Typ Max Units Test Conditions
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
Q
di
di
rr1
rr2
(rec)M
(rec)M
Reverse Recovery Time 30 IF = 1.0A, dif/dt = 200A/µs, VR = 30V
See Fig. 5, 10
Peak Recovery Current 5.8 10 TJ = 25°C
See Fig. 6
Reverse Recovery Charge 260 675 TJ = 25°C
See Fig. 7
/dt1 Peak Rate of Fall of Recovery Current 120 TJ = 25°C
/dt2 During t
See Fig. 8
b
90 135 ns TJ = 25°C
164 245 TJ = 125°C IF = 16A
8.3 15 TJ = 125°C VR = 200V
680 1838 TJ = 125°C dif/dt = 200A/µs
76 TJ = 125°C
A
nC
A/µs
Thermal - Mechanical Characteristics
T
! Lead Temperature 300 °C
lead
R
thJC
R
" Thermal Resistance, Junction to Ambient 80
JA
th
Wt
! 0.063 in. from Case (1.6mm) for 10 sec
" Typical Socket Mount
2
Parameter Min Typ Max Units
Thermal Resistance, Junction to Case 0.83
Weight
2.0 g
0.07 (oz)
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K/W
HFA16TB120
1
1
Bulletin PD-20605 rev. B 11/00
100
(A)
F
10
T = 150˚C
J
T = 125˚C
J
T = 25˚C
1
Instantaneous Forward Current - I
0.1
02468
J
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
1
)
D = 0.50
thJC
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
(Thermal Resistance)
Thermal Response (Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1, Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Z
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000
T = 150˚C
J
100
(µA)
R
T = 125˚C
J
10
1
T = 25˚C
J
0.1
Reverse Current - I
0.01
0 200 400 600 800 1000 1200
Reverse Current - VR (V)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
000
(pF)
T
100
10
Junction Capacitance -C
1
1 10 100 1000 10000
T = 25˚C
J
Reverse Current - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
P
DM
t
1
t
Notes:
1. Duty factor D = t1/ t 2
2. Peak T = Pdm x ZthJC + Tc
J
Characteristics
thjc
2
A
A
3
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