Vishay HFA15TB60S Data Sheet
Bulletin PD-20615 rev. A 12/00
HFA15TB60S
TM
Ultrafast, Soft Recovery DiodeHEXFRED
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low
• Very Low Q
• Specified at Operating Conditions
I
RRM
rr
Benefits
• Reduced RFI and EMI
(N/C)
1
(K)
BASE
+
2
3
(A)
_
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA15TB60S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA15TB60S is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (I
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA15TB60S is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
) and does not
RRM
Absolute Maximum Ratings
V
R
IF @ TC = 100°C Continuous Forward Current 15
I
FSM
I
FRM
PD @ TC = 25°C Maximum Power Dissipation 74
PD @ TC = 100°C Maximum Power Dissipation 29
T
J
T
STG
Parameter Max. Units
Cathode-to-Anode Voltage 600 V
Single Pulse Forward Current 150 A
Maximum Repetitive Forward Current 60
Operating Junction and
Storage Temperature Range
-55 to +150
Qrr * = 84nC
di
(rec)M
VR = 600V
VF = 1.7V
/dt * = 188A/µs
* 125°C
D2 Pak
W
°C
1
HFA15TB60S
Bulletin PD-20615 rev. A 12/00
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
BR
V
FM
I
RM
C
T
L
S
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
di
(rec)M
Parameter Min. Typ. Max. Units Test Conditions
Cathode Anode Breakdown Voltage 600 ––– ––– V IR = 100µA
Max Forward Voltage
––– 1.3 1.7 IF = 15A
––– 1.5 2.0 V IF = 30A
––– 1.2 1.6 IF = 15A, TJ = 125°C
Max Reverse Leakage Current
––– 1.0 1 0 VR = VR Rated
––– 400 1000 TJ = 125°C, VR = 0.8 x VR Rated
µA
Junction Capacitance ––– 25 50 pF VR = 200V
Series Inductance ––– 8.0 ––– nH
Measured lead to lead 5mm from
package body
Parameter Min. Typ. Max. Units Test Conditions
Reverse Recovery Time ––– 23 ––– IF = 1.0A, dif/dt = 200A/µs, VR = 30V
See Fig. 5 & 6
Peak Recovery Current ––– 4.5 6.0 TJ = 25°C
Reverse Recovery Charge ––– 84 180 TJ = 25°C
See Fig. 7
/dt1 Peak Rate of Fall of Recovery Current ––– 188 ––– TJ = 25°C
/dt2 During t
See Fig. 8
b
––– 50 60 ns TJ = 25°C
––– 105 120 TJ = 125°C IF = 15A
––– 6.5 10 TJ = 125°C VR = 200V
––– 241 600 TJ = 125°C dif/dt = 200A/µs
––– 160 ––– TJ = 125°C
A
nC
A/µs
See Fig. 1
See Fig. 2
See Fig. 3
D Rated
Thermal - Mechanical Characteristics
T
! Lead Temperature –––– –––– 300 °C
lead
R
thJC
R
" Thermal Resistance, Junction to Ambient –––– –––– 80
thJA
Wt Weight –––– 2.0 –––– g
! 0.063 in. from Case (1.6mm) for 10 sec
" Typical Socket Mount
2
Parameter Min. Typ. Max. Units
Thermal Resistance, Junction to Case –––– –––– 1.7
–––– 0.07 –––– (oz)
K/W
100
A
A
(A)
F
10
Instantaneous Forward Current - I
T = 150°C
J
T = 125°C
J
T = 25°C
J
HFA15TB60S
Bulletin PD-20615 rev.A 12/00
10000
T = 150°C
1000
(µA)
R
100
Reverse Current - I
0.1
0.01
Fig. 2 - Typical Reverse Current vs. Reverse
(pF)
T
J
T = 125°C
J
10
1
T = 25°C
J
0 200 400 600
100
Reverse Voltage - V (V)
A
Voltage
T = 25°C
J
R
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Forward Voltage Drop - V (V)
FM
A
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
10
thJC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Fig. 4 - Maximum Thermal Impedance Z
Junction Capacitance -C
10
10 100 1000
Reverse Voltage - V (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
Characteristics
thjc
P
DM
1 2
J DM thJC C
R
t
1
t
2
3
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