VISHAY HFA 15TB60 Datasheet

Bulletin PD -2.334 rev. C 11/03

HFA15TB60

HFA15TB60-1

HEXFRED

TM

Ultrafast, Soft Recovery Diode

Features

• Ultrafast Recovery

• Ultrasoft Recovery

• Very Low

• Very Low Q

I

RRM

rr

• Specified at Operating Conditions

Benefits

• Reduced RFI and EMI

• Reduced Power Loss in Diode and Switching
Transistor

• Higher Frequency Operation

• Reduced Snubbing

• Reduced Parts Count

Description

International Rectifier's HFA15TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA15TB60 is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product

line features extremely low values of peak recovery current (I
exhibit any tendency to "snap-off" during the t

HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA15TB60 is ideally suited
for applications in power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications where high speed,
high efficiency is needed.

portion of recovery. The

b

) and does not

RRM

VR = 600V

VF = 1.7V

Qrr * = 84nC

di

/dt * = 188A/µs

(rec)M

TO-220AC

TO-262

125°C

*

Absolute Maximum Ratings

Parameter Max Units

V

R

@ TC = 100°C Continuous Forward Current 15

I

F

I

FSM

I

FRM

P

@ TC = 25°C Maximum Power Dissipation 74

D

P

@ TC = 100°C Maximum Power Dissipation 29

D

T

J

T

STG

Cathode-to-Anode Voltage 600 V

Single Pulse Forward Current 150
Maximum Repetitive Forward Current 60

Operating Junction and

Storage Temperature Range

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- 55 to +150

A

W

C

1

HFA15TB60, HFA15TB60-1

Bulletin PD-2.334 rev. C 11/03

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min Typ Max Units Test Conditions

V

BR

V

FM

I

RM

C

T

L

S

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)

t

rr

t

rr1

t

rr2

I

RRM1

I

RRM2

Q

rr1

Q

rr2

di

(rec)M

di

(rec)M

Cathode Anode Breakdown Voltage 600 V IR = 100µA

= 15A

F

= 30A

F

= 15A, TJ = 125°C

F

= VR Rated

R

µA

= 125°C, VR = 0.8 x VR Rated

J

Max Forward Voltage

Max Reverse Leakage Current

1.3 1.7 I

1.5 2.0 V I

1.2 1.6 I

1.0 10 V

400 1000 T

Junction Capacitance 25 50 pF VR = 200V

Series Inductance 8.0 nH

Parameter Min Typ Max Units Test Conditions

Measured lead to lead 5mm from
package body

Reverse Recovery Time 19 IF = 1.0A, dif/dt = 200A/µs, VR = 30V

See Fig. 5

42 60 ns TJ = 25°C
74 120 TJ = 125°C IF = 15A

Peak Recovery Current 4.0 6.0 TJ = 25°C

See Fig. 6

6.5 10 TJ = 125°C VR = 200V

Reverse Recovery Charge 84 180 TJ = 25°C

See Fig. 7

241 600 TJ = 125°C dif/dt = 200A/µs
/dt1 Peak Rate of Fall of Recovery Current 188 TJ = 25°C
/dt2 During t

b

See Fig. 8

160 TJ = 125°C

A

nC

A/µs

See Fig. 1

See Fig. 2

D Rated

See Fig. 3

Thermal - Mechanical Characteristics

Parameter Min Typ Max Units

T

 Lead Temperature 300 °C

lead

R

thJC

 Thermal Resistance, Junction to Ambient 80

R

thJA

 Thermal Resistance, Case to Heat Sink 0.5

R

thCS

Wt

T

 0.063 in. from Case (1.6mm) for 10 sec
 Typical Socket Mount
 Mounting Surface, Flat, Smooth and Greased

Thermal Resistance, Junction to Case 1.7

Weight

Mounting Torque

6.0 12 Kg-cm

5.0 10 lbf•in

2.0 g

0.07 (oz)

2

K/W

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HFA15TB60, HFA15TB60-1

A

A

Bulletin PD-2.334 rev. C 11/03

100

(A)

F

T = 150°C

J

T = 125°C

J

10

T = 25°C

J

Instantaneous Forward Current - I

1

1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

Forward Voltage Drop - V (V)

FM

Fig. 1 - Maximum Forward Voltage Drop

vs. Instantaneous Forward Current

10

10000

T = 150°C

1000

(µA)

R

100

10

1

Reverse Current - I

0.1

0.01

J

T = 125°C

J

T = 25°C

J

0 200 400 600

Reverse Voltage - V (V)

R

Fig. 2 - Typical Reverse Current vs. Reverse

Voltage

A

100

(pF)

T

T = 25°C

J

A

Junction Capacitance -C

10

10 100 1000

Reverse Voltage - V (V)

R

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

thJC

Thermal Response (Z )

0.01

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1

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Fig. 4 - Maximum Thermal Impedance Z

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

Characteristics

thjc

J DM thJC C

1 2

P

DM

t

1

t

2

3

HFA15TB60, HFA15TB60-1

A

A

A

A

Bulletin PD-2.334 rev. C 11/03

100

I = 30A

F

I = 15A

F

80

60

I = 5.0A

F

trr- (nC)

40

20

V = 200V

R

T = 125°C

J

T = 25°C

J

0

100 1000

di /dt - (A/µs)

f

Fig. 5 - Typical Reverse Recovery vs. di

800

V = 200V

R

T = 125°C

J

T = 25°C

J

700

f

/dt

25

V = 200V

R

T = 125°C

J

T = 25°C

J

20

I = 30A

F

I = 15A

15

F

I = 5.0A

F

Irr- ( A)

10

5

0

100 1000

di /dt - (A/µs)

f

Fig. 6 - Typical Recovery Current vs. di

10000

V = 200V

R

T = 125°C

J

T = 25°C

J

f

/dt

I = 30A

600

500

400

Qrr- (nC)

300

F

I = 15A

F

I = 5.0A

F

1000

I = 30A

F

I = 15A

F

I = 5.0A

F

di (rec) M/dt- (A /µs)

200

100

0

100 1000

di /dt - (A/µs)

f

100

100 1000

Fig. 7 - Typical Stored Charge vs. dif/dt Fig. 8 - Typical di

4

di /dt - (A/µs)

f

/dt vs. dif/dt

(rec)M

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REVERSE RECOVERY CIRCUIT

Anode

1

3

Cathode

Base

Cathode

2

V = 200V

R

Ω

0.01

L = 70µH

D.U.T.

dif/dt
ADJUST

G

D

IRFP250

S

HFA15TB60, HFA15TB60-1

Bulletin PD-2.334 rev. C 11/03

I

F

0

1

1. dif/dt - Rate of change of current
through zero crossing

2. I

- Peak reverse recovery current

RRM

3. trr - Reverse recovery time measured
from zero crossing point of negative
going I

to point where a line passing

F

through 0.75 I
extrapolated to zero current

RRM

and 0.50 I

di /dt

f

RRM

t

a

3

t

rr

t

b

4

Q

2

I

RRM

0.75

4. Qrr - Area under curve defined by t
and I

t
Qrr =
2

5. di

(rec)M

current during t

rr

0.5

I

RRM

di(rec)M/dt

I

RRM

RRM

/dt - Peak rate of change of

X I

rr

portion of t

b

5

rr

RRM

rr

Fig. 9 - Reverse Recovery Parameter Test

Circuit

Outline Table

10.54 (0.41)

15.24 (0.60)

14.84 (0.58)

14.09 (0.55)

13.47 (0.53)

4.57 (0.18)

4.32 (0.17)

MAX.

1

1.40 (0.05)

1.15 (0.04)

1

TERM 2

3

2.04 (0.080) MAX.

0.94 (0.04)

0.69 (0.03)

3

5.08 (0.20) REF.

3.78 (0.15)

3.54 (0.14)

2.92 (0.11)

2.54 (0.10)

3.96 (0.16)

3.55 (0.14)

0.61 (0.02) MAX.

DIA.

Conforms to JEDEC Outline TO-220AC

Dimensions in millimeters and inches

Fig. 10 - Reverse Recovery Waveform and

Definitions

1.32 (0.05)

1.22 (0.05)

6.48 (0.25)

6.23 (0.24)

2°

0.10 (0.004)

2.89 (0.11)

2.64 (0.10)

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5

HFA15TB60, HFA15TB60-1

e

Bulletin PD-2.334 rev. C 11/03

Outline Table

2

1

N/C

3

Anod

Conforms to JEDEC Outline TO-262

Dimensions in millimeters and inches

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information. 11/03

6

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