Vishay HFA135NH40PBF Data Sheet

HFA135NH40PbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 275 A

HALF-PAK (D-67)

PRODUCT SUMMARY

IF (maximum) 275 A

V

R

I

at T

F(DC)

C

Lug terminal

anode

Base

cathode

400 V

138 A at 100 °C

HEXFRED

FEATURES

• Very low Qrr and t

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced snubbing

DESCRIPTION

HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.

®

rr

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Continuous forward current I

Single pulse forward current I

Non-repetitive avalanche energy E

Maximum power dissipation P

Operating junction and storage
temperature range

T

J

FSM

, T

F

AS

R

TC = 25 °C 275

= 100 °C 138

C

Limited by junction temperature 900

L = 100 µH, duty cycle limited by maximum T

D

TC = 25 °C 463

T

= 100 °C 185

C

Stg

J

400 V

AT

1.4 mJ

W

- 55 to + 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

Junction capacitance C

Series inductance L

V

BR

FM

I

RM

T

S

IR = 100 µA 400 - -

IF = 135 A

I

= 270 A - 1.2 2.0

F

I

= 135 A, TJ = 125 °C - 0.96 1.58

F

TJ = 125 °C, VR = 400 V See fig. 2 - - 3 mA

VR = 200 V See fig. 3 - 280 380 pF

From top of terminal hole to mounting plane - 6.0 - nH

See fig. 1

- 1.06 1.65

V

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Revision: 01-Aug-08 1

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HFA135NH40PbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 275 A

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of recovery current
See fig. 8

dI

t

rr

I

RRM

Q

(rec)M

TJ = 25 °C

T

= 125 °C - 280 440

J

TJ = 25 °C - 7.5 14

= 135 A

I

T

= 125 °C - 15 30

J

TJ = 25 °C - 150 780

rr

T

= 125 °C - 2800 6300

J

= 25 °C - 350 -

T

J

/dt

T

= 125 °C - 300 -

J

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Terminal torque

Case style HALF-PAK module

minimum 3 (26.5)

maximum 4 (35.4)

minimum 3.4 (30)

maximum 5 (44.2)

,

T

J

T

Stg

R

thJC

R

thCS

DC operation
See fig. 4

Mounting surface, flat, smooth and greased 0.05

- 77 120

- 55 to 150 °C

0.27
°C/W

30 g

1.06 oz.

N · m

(lbf · in)

ns

A

nC

A/µs

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2 Revision: 01-Aug-08

Document Number: 94050

HFA135NH40PbF

1000

100

10

- Istantaneous Forward Current (A)

1

F

I

0.2 3.21.2

Fig. 1 - Maximum Forward Voltage Drop vs.

10

1

0.1

0.01

- Reverse Current (µA)

0.001

R

I

0.0001

100

Fig. 2 - Typical Reverse Current vs.

Ultrafast Soft Recovery Diode,

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

0.7 2.2

VFM - Forward Voltage Drop (V)

Instantaneous Forward Current

VR - Reverse Voltage (V)

1.7

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

200 400300

Reverse Voltage

2.7

HEXFRED

275 A

®

Maximum Allowable

Case Temperature (°C)

Vishay High Power Products

160

140

120

100

80

60

40

20

0

50 150 200 300

0 100 250 350

I

- DC Forward Current (A)

F(AV)

DC

Fig. 4 - Maximum Allowable Case Temperature vs. DC

Forward Current

(ns)

rr

t

450

400

350

300

250

200

150

100

50

0

100

TJ = 125 °C
TJ = 25 °C

IF = 200 A

= 135 A

I

F

= 50 A

I

F

1000

dIF/dt (A/µs)

Fig. 5 - Typical Reverse Recovery Time vs. dI

/dt

F

10 000

1000

- Junction Capacitance (pF)

T

C

100

1 10 100 1000

TJ = 25 °C

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

(A)

RRM

I

70

TJ = 125 °C
TJ = 25 °C

60

50

IF = 200 A

= 135 A

I

F

40

= 50 A

I

F

30

20

10

0

100

dIF/dt (A/µs)

Fig. 6 - Typical Recovery Current vs. dI

F

1000

/dt

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Revision: 01-Aug-08 3

HFA135NH40PbF

Vishay High Power Products

6000

TJ = 125 °C
TJ = 25 °C

5000

IF = 200 A

= 135 A

I

F

= 50 A

I

F

0

100

dIF/dt (A/µs)

Fig. 7 - Typical Stored Charge vs. dIF/dt Fig. 8 - Typical dI

1

(nC)

rr

Q

4000

3000

2000

1000

HEXFRED

®

Ultrafast Soft Recovery

Diode, 275 A

10 000

1000

/dt (A/µs)

(rec)M

dI

1000

100

100

200 A
135 A
50 A

TJ = 125 °C
TJ = 25 °C

dIF/dt (A/µs)

(rec)M

1000

/dt vs. dIF/dt

0.1

D = 0.50

0.01

- Thermal Response

thJC

Z

0.001

0.00001 0.0001 0.001 0.01 0.1

Single pulse

(thermal response)

D = 0.33
D = 0.25
D = 0.17
D = 0.08

t1 - Rectangular Pulse Duration (s)

Fig. 9 - Maximum Thermal Impedance Z

Characteristics

thJC

1

10

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Document Number: 94050

4 Revision: 01-Aug-08

HFA135NH40PbF

HEXFRED

Ultrafast Soft Recovery Diode,

275 A

L = 70 µH

dIF/dt

adjust

Fig. 10 - Reverse Recovery Parameter Test Circuit

I

F

0

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

- peak reverse recovery current

(2) I

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

Fig. 11 - Reverse Recovery Waveform and Definitions

dIF/dt

RRM

G

V

= 200 V

R

®

Vishay High Power Products

0.01 Ω

D.U.T.

D

IRFP250

S

(3)

t

rr

t

a

(2)

I

RRM

t

b

(4)

Q

rr

0.5 I

RRM

dI

/dt

(rec)M

0.75 I

RRM

(4) Q

- area under curve defined by t

rr

and I

RRM

trr x I

(5) dI
current during t

=

Q

rr

/dt - peak rate of change of

(rec)M

portion of t

b

(5)

rr

RRM

2

rr

L = 100 µH

I

L(PK)

High-speed

Freewheel

diode

switch

V

= 50 V

d

+

Decay

time

V

(AVAL)

V

R(RATED)

D.U.T.

Current
monitor

R

g

= 25 Ω

Fig. 12 - Avalanche Test Circuit and Waveforms

Document Number: 94050 For technical questions, contact: [e-mail]

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Revision: 01-Aug-08 5

HFA135NH40PbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 275 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95020

HFA 135 N H 40 PbF

51324

1 - HEXFRED® family

2 - Average current rating

3 - N = Not isolated

4 - H = HALF-PAK

5 - Voltage rating (400 V)

6 - Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

6

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6 Revision: 01-Aug-08

Document Number: 94050

DIMENSIONS in millimeters (inches)

30 ± 0.05

(1.2 ± 0.002)

5 (0.20)
4 (0.16)

13 (0.51)

24.4 (0.96)

5 (0.196) + 45°

Ø 7.3 ± 0.1 (0.29 ± 0.0039)

17.5 (0.69)

16.5 (0.65)

Ø 4.3

- 0.1

0.0

(Ø 0.169 )

- 0.004

0.000

¼" - 20 UNC

40 MAX. (1.58)

21 (0.82)
20 (0.78)

Outline Dimensions

Vishay Semiconductors

D-67 HALF-PAK

Document Number: 95020 For technical questions, contact: [e-mail]
Revision: 20-May-09 1

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