Vishay HFA120FA60P Data Sheet

HFA120FA60P

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 60 A

SOT-227

PRODUCT SUMMARY

V

R

V

(typical) at 125 °C 1.4 V

F

Q

(typical) 270 nC

rr

(typical) 7.0 A

I

RRM

t

(typical) 65 ns

rr

dI

/dt (typical) at 125 °C 270 A/μs

(rec)M

I

at T

F(DC)

C

600 V

40 A at 100 °C

HEXFRED

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed for industrial level

DESCRIPTION

This SOT-227 modules with HEXFRED® rectifier are
available in two basic configurations. They are the
antiparallel and the parallel configurations. The antiparallel
configuration (HFA120EA60) is used for simple series
rectifier and high voltage application. The parallel
configuration (HFA120FA60) is used for simple parallel
rectifier and high current application. The semiconductor in
the SOT-227 package is isolated from the copper base
plate, allowing for common heatsinks and compact
assemblies to be built. These modules are intended for
general applications such as power supplies, battery
chargers, electronic welders, motor control, DC chopper,
and inverters.

®

ABSOLUTE MAXIMUM RATINGS PER LEG

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Continuous forward current I

Single pulse forward current I

Maximum repetitive forward current I

RMS isolation voltage, any terminal to case V

Maximum power dissipation P

Operating junction and storage temperature range T

J

F

FSM

FRM

ISOL

, T

R

TC = 25 °C 75

= 100 °C 40

T

C

TJ = 25 °C 800

Rated VR, square wave, 20 kHz, TC = 60 °C 180

t = 1 minute 2500 V

D

TC = 25 °C 180

T

= 100 °C 71

C

Stg

600 V

A

W

- 55 to 150 °C

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode breakdown voltage V

Maximum forward voltage V

Maximum reverse leakage current I

Junction capacitance C

BR

FM

RM

IR = 100 μA 600 - -

IF = 60 A

I

= 120 A - 1.9 2.1

F

I

= 60 A, TJ = 125 °C - 1.4 1.6

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 130 2000

J

VR = 200 V See fig. 3 - 120 170 pF

T

See fig. 1

See fig. 2

-1.51.7

-2.520

V

μA

Document Number: 94049 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

, [e-mail], [e-mail] 1

HFA120FA60P

Vishay Semiconductors

HEXFRED

®

Ultrafast Soft Recovery Diode, 60 A

DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

Reverse recovery time
See fig. 5, 6 and 16

Peak recovery current
See fig. 7 and 8

Reverse recovery charge
See fig. 9 and 10

Peak rate of recovery current during t
See fig. 11 and 12

rr

rr1

t

rr2

I

RRM1

I

RRM2

Q

rr1

Q

rr2

dI

(rec)M

b

dI

(rec)M

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Junction to case, both legs conducting - - 0.35

Case to sink, flat, greased surface R

Weight - 30 - g

Mounting torque - 1.3 - Nm

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 34 -

TJ = 25 °C

TJ = 125 °C - 130 200

TJ = 25 °C - 7.0 13

= 60 A

I

TJ = 125 °C - 13 23

TJ = 25 °C - 270 410

TJ = 125 °C - 490 740

/dt1 TJ = 25 °C - 350 -

/dt2 TJ = 125 °C - 270 -

R

thJC

thCS

F

/dt = 200 A/μs

dI

F

V

= 200 V

R

- - 0.70

-0.05-

-6598

°C/W

K/W

nst

A

nC

A/μs

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94049
2 [e-mail]

, [e-mail], [e-mail] Revision: 22-Jul-10

10

100

0 3.01.0

1.5

VFM - Forward Voltage Drop (V)

I

F

- Instantaneous Forward Current (A)

1000

0.5 2.0

1

2.5

TJ = 150 °C
T

J

= 125 °C

T

J

= 25 °C

94049_01

0.1

1

10

100

0

VR - Reverse Voltage (V)

I

R

- Reverse Current (μA)

1000

10 000

200 600400

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

94049_02

10

100

1000

10 000

1 10 100 1000

VR - Reverse Voltage (V)

C

T

- Junction Capacitance (pF)

TJ = 25 °C

94049_03

HFA120FA60P

Ultrafast Soft Recovery Diode, 60 A

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current (Per Leg)

HEXFRED

®

Vishay Semiconductors

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage (Per Leg)

94049_04

Document Number: 94049 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)

1

P

0.1

- Thermal Response

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

DM

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics (Per Leg)

thJC

, [e-mail], [e-mail] 3

t

1

t

2

1/t2

+ T

thJC

C

HFA120FA60P

200

40

100

1000

dIF/dt (A/μs)

t

rr

(ns)

80

160

120

VR = 200 V
T

J

= 125 °C

T

J

= 25 °C

IF = 120 A
I

F

= 60 A

I

F

= 30 A

94049_05

100

0

100

1000

dIF/dt (A/µs)

I

rr

(A)

10

VR = 200 V
T

J

= 125 °C

T

J

= 25 °C

IF = 120 A
I

F

= 60 A

I

F

= 30 A

94049_06

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 60 A

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)

HEXFRED

94049_07

®

4000

VR = 200 V

= 125 °C

T

J

= 25 °C

T

3000

2000

(nC)

rr

Q

1000

10 000

1000

/dt (A/µs)

J

IF = 120 A

= 60 A

I

F

= 30 A

I

F

0

100

dIF/dt (A/μs)

Fig. 7 - Typical Stored Charge vs. dI

VR = 200 V

= 125 °C

T

J

= 25 °C

T

J

IF = 120 A

= 60 A

I

F

= 30 A

I

F

1000

/dt (Per Leg)

F

Fig. 6 - Typical Recovery Current vs. dI

/dt (Per Leg)

F

(rec)M

dI

94049_08

100

100

Fig. 8 - Typical dI

dIF/dt (A/µs)

/dt vs. dIF/dt (Per Leg)

(rec)M

1000

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, [e-mail], [e-mail] Revision: 22-Jul-10

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

V

(AVAL)

V

R(RATED)

I

L(PK)

Decay

time

Current
monitor

High-speed

switch

D.U.T.

R

g

= 25 Ω

+

Freewheel

Diode

V

d

= 50 V

L = 100 µH

HFA120FA60P

HEXFRED

®

Ultrafast Soft Recovery Diode, 60 A

= 200 V

V

R

0.01 Ω

L = 70 μH

D.U.T.

dIF/dt
adjust

G

Fig. 9 - Reverse Recovery Parameter Test Circuit

D

IRFP250

S

Vishay Semiconductors

Document Number: 94049 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

Fig. 10 - Reverse Recovery Waveform and Definitions

Fig. 11 - Avalanche Test Circuit and Waveforms

, [e-mail], [e-mail] 5

HFA120FA60P

1 - HEXFRED® family

2 - Process: A electron irradiated

3 - Current rating (120 = 120 A)

4 - Package indicator (SOT-227)

5 - Voltage rating (60 = 600 V)

- P = Lead (Pb)-free

6

Device code

51324

6

HF A 120 FA 60 P

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 60 A

CIRCUIT CONFIGURATION

ORDERING INFORMATION TABLE

HEXFRED

K2

K1

®

A2

A1

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95036

Packaging information www.vishay.com/doc?95037

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94049
6 [e-mail]

, [e-mail], [e-mail] Revision: 22-Jul-10

DIMENSIONS in millimeters (inches)

38.30 (1.508)

37.80 (1.488)

-A-

4

12

3

12.50 (0.492)

7.50 (0.295)

Ø 4.40 (0.173)
Ø 4.20 (0.165)

30.20 (1.189)

29.80 (1.173)

15.00 (0.590)

6.25 (0.246)

25.70 (1.012)

25.20 (0.992)

-B-

R full

Chamfer

2.00 (0.079) x 45°

2.10 (0.082)

1.90 (0.075)

8.10 (0.319)

7.70 (0.303)

4 x

2.10 (0.082)

1.90 (0.075)

-C-

0.12 (0.005)

12.30 (0.484)

11.80 (0.464)

MMM

0.25 (0.010)

CA B

4 x M4 nuts

Outline Dimensions

Vishay Semiconductors

SOT-227

Notes

• Dimensioning and tolerancing per ANSI Y14.5M-1982

• Controlling dimension: millimeter

Document Number: 95036 For technical questions, contact: [e-mail]
Revision: 28-Aug-07 1

www.vishay.com

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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1