Vishay HFA120FA60P Data Sheet
HFA120FA60P
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A
SOT-227
PRODUCT SUMMARY
V
R
V
(typical) at 125 °C 1.4 V
F
Q
(typical) 270 nC
rr
(typical) 7.0 A
I
RRM
t
(typical) 65 ns
rr
dI
/dt (typical) at 125 °C 270 A/μs
(rec)M
I
at T
F(DC)
C
600 V
40 A at 100 °C
HEXFRED
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
DESCRIPTION
This SOT-227 modules with HEXFRED® rectifier are
available in two basic configurations. They are the
antiparallel and the parallel configurations. The antiparallel
configuration (HFA120EA60) is used for simple series
rectifier and high voltage application. The parallel
configuration (HFA120FA60) is used for simple parallel
rectifier and high current application. The semiconductor in
the SOT-227 package is isolated from the copper base
plate, allowing for common heatsinks and compact
assemblies to be built. These modules are intended for
general applications such as power supplies, battery
chargers, electronic welders, motor control, DC chopper,
and inverters.
®
ABSOLUTE MAXIMUM RATINGS PER LEG
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Continuous forward current I
Single pulse forward current I
Maximum repetitive forward current I
RMS isolation voltage, any terminal to case V
Maximum power dissipation P
Operating junction and storage temperature range T
J
F
FSM
FRM
ISOL
, T
R
TC = 25 °C 75
= 100 °C 40
T
C
TJ = 25 °C 800
Rated VR, square wave, 20 kHz, TC = 60 °C 180
t = 1 minute 2500 V
D
TC = 25 °C 180
T
= 100 °C 71
C
Stg
600 V
A
W
- 55 to 150 °C
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Maximum forward voltage V
Maximum reverse leakage current I
Junction capacitance C
BR
FM
RM
IR = 100 μA 600 - -
IF = 60 A
I
= 120 A - 1.9 2.1
F
I
= 60 A, TJ = 125 °C - 1.4 1.6
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 130 2000
J
VR = 200 V See fig. 3 - 120 170 pF
T
See fig. 1
See fig. 2
-1.51.7
-2.520
V
μA
Document Number: 94049 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
HFA120FA60P
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 60 A
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
Peak rate of recovery current during t
See fig. 11 and 12
rr
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
dI
(rec)M
b
dI
(rec)M
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Junction to case, both legs conducting - - 0.35
Case to sink, flat, greased surface R
Weight - 30 - g
Mounting torque - 1.3 - Nm
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 34 -
TJ = 25 °C
TJ = 125 °C - 130 200
TJ = 25 °C - 7.0 13
= 60 A
I
TJ = 125 °C - 13 23
TJ = 25 °C - 270 410
TJ = 125 °C - 490 740
/dt1 TJ = 25 °C - 350 -
/dt2 TJ = 125 °C - 270 -
R
thJC
thCS
F
/dt = 200 A/μs
dI
F
V
= 200 V
R
- - 0.70
-0.05-
-6598
°C/W
K/W
nst
A
nC
A/μs
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94049
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10
10
100
0 3.01.0
1.5
VFM - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
1000
0.5 2.0
1
2.5
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
94049_01
0.1
1
10
100
0
VR - Reverse Voltage (V)
I
R
- Reverse Current (μA)
1000
10 000
200 600400
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
94049_02
10
100
1000
10 000
1 10 100 1000
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
94049_03
HFA120FA60P
Ultrafast Soft Recovery Diode, 60 A
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
HEXFRED
®
Vishay Semiconductors
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
94049_04
Document Number: 94049 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
1
P
0.1
- Thermal Response
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
DM
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics (Per Leg)
thJC
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
t
1
t
2
1/t2
+ T
thJC
C
Loading...