HFA08TB60SPbF
Vishay High Power Products
Base
cathode
+
2
1
N/C
D2PAK
PRODUCT SUMMARY
V
R
at 8 A at 25 °C 1.7 V
V
F
I
F(AV)
t
(typical) 18 ns
rr
T
(maximum) 150 °C
J
(typical) 65 nC
Q
rr
dI
/dt (typical) 240 A/µs
(rec)M
I
RRM
HEXFRED
®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
• Specified at operating conditions
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• AEC-Q101 qualified
BENEFITS
• Reduced RFI and EMI
Anode
3
-
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA08TB60S is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
600 V
8 A
5.0 A
ratings of 600 V and 8 A continuous current, the
HFA08TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60S is ideally
suited for applications in power supplies (PFC boost diode)
and power conversion systems (such as inverters), motor
drives, and many other similar applications where high
speed, high efficiency is needed.
RRM
rr
®
product line features
RRM
) and
b
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94048 For technical questions, contact: diodestech@vishay.com
Revision: 02-Sep-09 1
J
F
FSM
FRM
, T
R
TC = 100 °C 8
D
TC = 25 °C 36
T
= 100 °C 14
C
Stg
600 V
60
24
W
- 55 to + 150 °C
www.vishay.com
ASingle pulse forward current I
HFA08TB60SPbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 8 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
dI
dI
rr1
t
rr2
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr
rr1
rr2
Reverse recovery time
See fig. 5, 6
Peak recovery current
Reverse recovery charge
See fig. 7
Peak rate of fall of
recovery current during t
See fig. 8
b
IR = 100 µA 600 - -
IF = 8.0 A
I
= 16 A - 1.7 2.1
F
I
= 8.0 A, TJ = 125 °C - 1.4 1.7
F
VR = VR rated
= 125 °C, VR = 0.8 x VR rated
T
J
VR = 200 V See fig. 3 - 10 25 pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
See fig. 1
See fig. 2
-1.41.7
-0.35.0
- 100 500
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 18 -
TJ = 25 °C
-3755
TJ = 125 °C - 55 90
TJ = 25 °C - 3.5 5.0
TJ = 125 °C - 4.5 8.0
TJ = 25 °C - 65 138
TJ = 125 °C - 124 360
I
= 8.0 A
F
/dt = 200 A/µs
dI
F
V
= 200 V
R
/dt1 TJ = 25 °C - 240 -
/dt2 TJ = 125 °C - 210 -
V
µA
nst
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
lead
R
thJC
R
thJA
Weight
Marking device Case style D
www.vishay.com For technical questions, contact: diodestech@vishay.com
2 Revision: 02-Sep-09
0.063" from case (1.6 mm) for 10 s - - 300 °C
--3.5
K/W
Typical socket mount - - 80
-2.0- g
-0.07- oz.
2
PAK HFA08TB60S
Document Number: 94048
HFA08TB60SPbF
100
10
1
0.1
- Instantaneous Forward Current (A)
F
I
0.4 3.20.8 1.2
Fig. 1 - Maximum Forward Voltage Drop vs.
Ultrafast Soft Recovery Diode, 8 A
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
J
2.0 2.8
2.41.6
VFM - Forward Voltage Drop (V)
Instantaneous Forward Current
100
HEXFRED
®
- Reverse Current (µA)
R
I
Vishay High Power Products
1000
100
10
1
0.1
0.01
0.001
0
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
100 600500
300
400200
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
10
- Junction Capacitance (pF)
T
C
1
1 10 100 1000
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50
0.1
- Thermal Response
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
Single pulse
(thermal response)
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t
1
thJC
t
2
+ T
C
1
Document Number: 94048 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 02-Sep-09 3
HFA08TB60SPbF
Vishay High Power Products
80
IF = 16 A
= 8 A
I
F
= 4 A
60
40
(ns)
rr
t
20
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
20
VR = 200 V
= 125 °C
T
J
TJ = 25 °C
15
I
F
HEXFRED
®
Ultrafast Soft Recovery Diode, 8 A
500
VR = 200 V
T
= 125 °C
J
= 25 °C
T
J
400
300
IF = 16 A
= 8 A
I
F
= 4 A
I
F
200
100
0
100
Fig. 7 - Typical Stored Charge vs. dI
IF = 16 A
= 8 A
I
F
= 4 A
I
F
1000
(nC)
rr
Q
10 000
dIF/dt (A/µs)
1000
/dt
F
(A)
rr
I
IF = 16 A
= 8 A
I
10
F
= 4 A
I
F
5
0
100
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
1000
/dt
1000
/dt (A/µs)
(rec)M
dI
100
100
Fig. 8 - Typical dI
VR = 200 V
TJ = 125 °C
TJ = 25 °C
dIF/dt (A/µs)
(rec)M
1000
/dt vs. dIF/dt
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94048
4 Revision: 02-Sep-09
HFA08TB60SPbF
HEXFRED
®
Ultrafast Soft Recovery Diode, 8 A
V
= 200 V
R
0.01 Ω
L = 70 µH
(3)
a
(2)
D
S
t
rr
I
RRM
(4) Q
and I
(5) dI
current during t
dIF/dt
adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
dIF/dt
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
(2) I
- peak reverse recovery current
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
t
Vishay High Power Products
D.U.T.
IRFP250
t
b
(4)
Q
rr
0.5 I
RRM
(rec)M
Q
rr
=
(5)
/dt
trr x I
portion of t
b
dI
0.75 I
RRM
- area under curve defined by t
rr
RRM
/dt - peak rate of change of
(rec)M
rr
RRM
2
rr
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
Document Number: 94048 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 02-Sep-09 5
DIMENSIONS in millimeters and inches
c
B
Detail A
c2
AA
A
± 0.004
B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c)
c1
Base
Metal
Plating
Conforms to JEDEC outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010
A
B
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Outline Dimensions
Vishay Semiconductors
D2PAK
SYMBOL
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Document Number: 95046 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
This document is subject to change without notice.
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
MILLIMETERS INCHES
www.vishay.com/doc?91000
NOTES
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Vishay
Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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