Vishay HFA08TB60SPBF Data Sheet

HFA08TB60SPbF

Vishay High Power Products

Base

cathode

+

2

1

N/C

D2PAK

PRODUCT SUMMARY

V

R

at 8 A at 25 °C 1.7 V

V

F

I

F(AV)

t

(typical) 18 ns

rr

T

(maximum) 150 °C

J

(typical) 65 nC

Q

rr

dI

/dt (typical) 240 A/µs

(rec)M

I

RRM

HEXFRED

®

Ultrafast Soft Recovery Diode, 8 A

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Compliant to RoHS directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21
definition

• AEC-Q101 qualified

BENEFITS

• Reduced RFI and EMI

Anode

3

-

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA08TB60S is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic

600 V

8 A

5.0 A

ratings of 600 V and 8 A continuous current, the
HFA08TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60S is ideally
suited for applications in power supplies (PFC boost diode)
and power conversion systems (such as inverters), motor
drives, and many other similar applications where high
speed, high efficiency is needed.

RRM

rr

®

product line features

RRM

) and

b

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94048 For technical questions, contact: [e-mail]
Revision: 02-Sep-09 1

J

F

FSM

FRM

, T

R

TC = 100 °C 8

D

TC = 25 °C 36

T

= 100 °C 14

C

Stg

600 V

60

24

W

- 55 to + 150 °C

www.vishay.com

ASingle pulse forward current I

HFA08TB60SPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 8 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

dI

dI

rr1

t

rr2

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr

rr1

rr2

Reverse recovery time
See fig. 5, 6

Peak recovery current

Reverse recovery charge
See fig. 7

Peak rate of fall of
recovery current during t
See fig. 8

b

IR = 100 µA 600 - -

IF = 8.0 A

I

= 16 A - 1.7 2.1

F

I

= 8.0 A, TJ = 125 °C - 1.4 1.7

F

VR = VR rated

= 125 °C, VR = 0.8 x VR rated

T

J

VR = 200 V See fig. 3 - 10 25 pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

See fig. 1

See fig. 2

-1.41.7

-0.35.0

- 100 500

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 18 -

TJ = 25 °C

-3755

TJ = 125 °C - 55 90

TJ = 25 °C - 3.5 5.0

TJ = 125 °C - 4.5 8.0

TJ = 25 °C - 65 138

TJ = 125 °C - 124 360

I

= 8.0 A

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

/dt1 TJ = 25 °C - 240 -

/dt2 TJ = 125 °C - 210 -

V

µA

nst

A

nC

A/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

lead

R

thJC

R

thJA

Weight

Marking device Case style D

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 02-Sep-09

0.063" from case (1.6 mm) for 10 s - - 300 °C

--3.5
K/W

Typical socket mount - - 80

-2.0- g

-0.07- oz.

2

PAK HFA08TB60S

Document Number: 94048

HFA08TB60SPbF

100

10

1

0.1

- Instantaneous Forward Current (A)

F

I

0.4 3.20.8 1.2

Fig. 1 - Maximum Forward Voltage Drop vs.

Ultrafast Soft Recovery Diode, 8 A

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

2.0 2.8

2.41.6

VFM - Forward Voltage Drop (V)

Instantaneous Forward Current

100

HEXFRED

®

- Reverse Current (µA)

R

I

Vishay High Power Products

1000

100

10

1

0.1

0.01

0.001

0

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

100 600500

300

400200

VR - Reverse Voltage (V)

Fig. 2 - Typical Reverse Current vs. Reverse Voltage

10

- Junction Capacitance (pF)

T

C

1

1 10 100 1000

TJ = 25 °C

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

D = 0.50

0.1

- Thermal Response

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1

Single pulse

(thermal response)

D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

P

DM

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

1/t2

t

1

thJC

t

2

+ T

C

1

Document Number: 94048 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 02-Sep-09 3