Ultrafast, Soft Recovery Diode
Bulletin PD-20618 07/00
HFA08SD60S
Features
• Ultrafast Recovery Time
• Ultrasoft Recovery
• Very Low I
• Very Low Q
• Guaranteed Avalanche
• Specified at Operating Temperature
RRM
rr
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and
Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description/ Applications
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems. The softness of the
recovery eliminates the need for a snubber in most applications.
These devices are ideally suited for freewheeling, flyback,
power converters, motor drives, and other applications where
high speed and reduced switching losses are design
requirements.
Package Outline
I
F(AV)
D - PAK
t
= 18ns
rr
= 8Amp
VR = 600V
Absolute Maximum Ratings
Parameters Max Units
V
RRM
I
F(AV)
I
FSM
I
FRM
P
D
TJ, T
Cathode-to-Anode Voltage 600 V
Continuous Forward Current 8 A
TC = 100°C
Single Pulse Forward Current 60
Peak Repetitive Forward Current 24
Maximum Power Dissipation 14 W
TC = 100°C
Operating Junction and Storage Temperatures - 55 to 150 °C
STG
1
HFA08SD60S
Bulletin PD-20618 07/00
Electrical Characteristics @ T
Parameters Min Typ
VBR, VrBreakdown Voltage, 600 - - V IR = 100µA
Blocking Voltage
V
F
I
R
C
T
L
S
Forward Voltage - 1.4 1.7 V IF = 8A
See Fig. 1 - 1.7 2.1 V IF = 16A
Max. Reverse Leakage Current - 0.3 5.0 µA VR = VR Rated
Junction Capacitance - 10 25 pF VR = 200V
Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body
= 25°C (unless otherwise specified)
J
Max Units
- 1.4 1.7 V IF = 8A, TJ = 125°C
- 100 500 µA TJ = 125°C, VR = 0.8 x VR Rated
Test Conditions
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ
di
t
rr
I
RRM
Q
(rec)
rr
Reverse Recovery Time -18-nsIF = 1.0A, diF/dt = 200A/µA, VR = 30V
-3755 TJ = 25°C
-5590 TJ = 125°C
Peak Recovery Current - 3.5 5.0 A TJ = 25°C
- 4.5 8.0 TJ = 125°C
Reverse Recovery Charge - 65 138 nC TJ = 25°C
- 124 360 TJ = 125°C
/dt Rate of Fall of recovery Current - 240 - A/µs TJ = 25°C
M
- 210 - TJ = 125°C
Max
Units Test Conditions
IF = 8A
VR = 200V
diF /dt = 200A/µs
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
T
J
T
Stg
T
lead
R
thJC
R
thJA
Wt Weight - 2.0 - g
! Typical Socket Mount
2
Max. Junction Temperature Range - - - 55 to 150 °C
Max. Storage Temperature Range - - - 55 to 150
Lead Temperature - - 300
Thermal Resistance, Junction to Case - - 3.5 °C/ W
!
Thermal Resistance, Junction to Ambient - - 80
- 0.07 - (oz)
(A)
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
125˚C
25˚C
T = 150˚C
J
0.1
1
10
00
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4
T = 150˚C
T = 125˚C
T = 25˚C
J
J
J
Instantaneous Forward Current - I
HFA08SD60S
Bulletin PD-20618 07/00
(µA)
R
Reverse Current - I
F
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
100
(pF)
T
Vs. Reverse Voltage
T = 25˚C
J
10
Junction Capacitance - C
1
1 10 100 1000
Forward Voltage Drop - V
Fig. 1 - Typical Forward Voltage Drop Characteristics
FM
(V)
Reverse Voltage - V R (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
(°C/W)
thJC
Thermal Impedance Z
D = 0.50
D = 0.20
D = 0.10
0.1
1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
Notes:
P
DM
t
1
t
2
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
.01
0.00001 0.0001 0.001 0.01 0.1 1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
Characteristics
thJC
3