VISHAY HFA06TB120S Technical data
TM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low I
• Very Low Q
• Specified at Operating Conditions
RRM
rr
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Bulletin PD -20602 rev. C 12/00
HFA06TB120S.. Series
Ultrafast, Soft Recovery DiodeHEXFRED
(N/C)
1
(K)
BASE
+
2
3
(A)
_
VR = 1200V
VF(typ.)* = 2.4V
I
F(AV)
Qrr (typ.)= 116nC
I
(typ.) = 4.4A
RRM
trr(typ.) = 26ns
di
/dt (typ.)* = 100A/µs
(rec)M
= 6.0A
Description
International Rectifier's HFA06TB120S is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 6
amps continuous current, the HFA06TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (I
does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
RRM
) and
HEXFRED features combine to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA06TB120S is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
V
R
IF @ TC = 100°C Continuous Forward Current 8.0
I
FSM
I
FRM
PD @ TC = 25°C Maximum Power Dissipation 62.5
PD @ TC = 100°C Maximum Power Dissipation 25
T
J
T
STG
* 125°C
Parameter Max . Units
Cathode-to-Anode Voltage 1200 V
Single Pulse Forward Current 80 A
Maximum Repetitive Forward Current 24
Operating Junction and
Storage Temperature Range
-55 to +150
D2 Pak
W
°C
1
HFA06TB120S..Series
Bulletin PD-20602 rev. C 12/00
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V
V
I
RM
C
L
S
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Cathode Anode Breakdown 1200 ––– ––– V IR = 100µA
BR
Voltage
Max. Forward Voltage ––– 2.7 3.0 IF = 6.0A
FM
––– 3.5 3.9 V IF = 12A
––– 2.4 2.8 IF = 6.0A, TJ = 125°C
Max. Reverse Leakage Current ––– 0.26 5.0 VR = VR Rated
––– 110 500 TJ = 125°C, VR = 0.8 x VR Rated
Junction Capacitance ––– 9.0 14 pF VR = 200V
T
µA
Rated
Series Inductance ––– 8.0 ––– nH Measured lead to lead 5mm from pkg body
Parameter Min. Typ. Max. Units Test Conditions
D R
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
di
(rec)M
Reverse Recovery Time ––– 26 ––– IF = 1.0A, dif/dt = 200A/µs, VR = 30V
––– 53 80 ns TJ = 25°C
––– 87 130 TJ = 125°C IF = 6.0A
Peak Recovery Current ––– 4.4 8.0 TJ = 25°C
A
––– 5.0 9.0 TJ = 125°C VR = 200V
Reverse Recovery Charge ––– 116 320 TJ = 25°C
––– 233 585 TJ = 125°C dif/dt = 200A/µs
nC
/dt1 Peak Rate of Recovery ––– 180 ––– TJ = 25°C
/dt2 Current During t
b
––– 100 ––– TJ = 125°C
A/µs
Thermal - Mechanical Characteristics
Parameter Min. Typ. Max. Units
T
lead
R
thJC
R
thJA
R
thCS
Wt Weight –––– 2.0 –––– g
! 0.063 in. from Case (1.6mm) for 10 sec
"#Typical Socket Mount
Lead Temperature –––– –––– 300 °C
!
Thermal Resistance, Junction to Case –––– –––– 2.0
Thermal Resistance, Junction to Ambient –––– –––– 80 K/ W
"
Thermal Resistance, Case to Heat Sink –––– 0.5 ––––
$
–––– 0.07 –––– (oz)
2
HFA06TB120S ..Series
0
Bulletin PD-20602 rev. C 12/00
100
10
(A)
F
1
Instantaneous Forward Current - I
T = 150˚C
J
T = 125˚C
J
T = 25˚C
J
1000
T = 150˚C
100
(µA)
R
10
J
125˚C
100˚C
1
25˚C
Reverse Current - I
0.1
0.01
0 200 400 600 800 1000 1200 1400
Reverse Voltage - VR (V)
100
(pF)
T
T = 25˚C
J
10
0.1
0246
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
D = 0.50
D = 0.20
1
0.1
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
thJC (°C/W)
(Thermal Resistance)
Thermal Impedance Z
.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Junction Capacitance - C
1
1 10 100 1000 10000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
3
Loading...