Vishay HFA04SD60S Data Sheet
Ultrafast, Soft Recovery Diode
Bulletin PD-20617 07/00
HFA04SD60S
Features
• Ultrafast Recovery Time
• Ultrasoft Recovery
• Very Low I
• Very Low Q
• Guaranteed Avalanche
• Specified at Operating Temperature
RRM
rr
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and
Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description/ Applications
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems. The softness of the
recovery eliminates the need for a snubber in most applications.
These devices are ideally suited for freewheeling, flyback,
power converters, motor drives, and other applications where
high speed and reduced switching losses are design
requirements.
Package Outline
I
F(AV)
D - PAK
t
= 38ns
rr
= 4Amp
VR = 600V
Absolute Maximum Ratings
Parameters Max Units
V
RRM
I
F(AV)
I
FSM
I
FRM
P
D
TJ, T
Cathode-to-Anode Voltage 600 V
Continuous Forward Current 4 A
TC = 100°C
Single Pulse Forward Current 25
Peak Repetitive Forward Current 16
TC = 116°C
Maximum Power Dissipation 10 W
TC = 100°C
Operating Junction and Storage Temperatures - 55 to 150 °C
STG
1
HFA04SD60S
Bulletin PD-20617 07/00
Electrical Characteristics @ T
Parameters
VBR, VrBreakdown Voltage, 600 - - V IR = 100µA
Blocking Voltage
V
F
I
R
C
T
L
S
Forward Voltage - 1.5 1.8 V IF = 4A
See Fig. 1 - 1.8 2.2 V IF = 8A
Max. Reverse Leakage Current - 0.17 3.0 µA VR = VR Rated
Junction Capacitance - 4 8 pF VR = 200V
Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body
= 25°C (unless otherwise specified)
J
Min Typ
- 1.4 1.7 V IF = 4A, TJ = 125°C
- 44 300 µA TJ = 125°C, VR = 0.8 x VR Rated
Max Units
Test Conditions
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
di
t
rr
I
RRM
Q
(rec)
rr
Reverse Recovery Time -17-nsIF = 1.0A, diF/dt = 200A/µA, VR = 30V
Peak Recovery Current - 2.9 5.2 A TJ = 25°C
Reverse Recovery Charge - 40 60 nC TJ = 25°C
/dt Rate of Fall of recovery Current - 280 - TJ = 25°C
M
Min
Typ Max Units Test Conditions
- 28 426 TJ = 25°C
-3857 TJ = 125°C
- 3.7 6.7 TJ = 125°C
- 70 105 TJ = 125°C
A/µs
- 235 - TJ = 125°C
I
= 4A
F
VR = 200V
diF /dt = 200A/µs
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
T
J
T
Stg
T
S
R
thJC
R
thJA
Wt Weight - 2.0 - g
T Mounting Torque 6.0 - 12 Kg*cm
! Typical Socket Mount
2
Max. Junction Temperature Range - - - 55 to 150 °C
Max. Storage Temperature Range - - - 55 to 150
Soldering Temperature, 10 sec - - 240
Thermal Resistance, Junction to Case - - 5.0 °C/ W
!
Thermal Resistance, Junction to Ambient - - 80
- 0.07 - (oz)
5.0 - 10 lbf*in
(A)
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500
25˚C
125˚C
T = 150˚C
J
0.1
1
10
00
0123456
T = 150˚C
T = 125˚C
T = 25˚C
J
J
J
F
Instantaneous Forward Current - I
HFA04SD60S
Bulletin PD-20617 07/00
(µA)
R
Reverse Current - I
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
100
(pF)
T
Vs. Reverse Voltage
T = 25˚C
J
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
D = 0.50
1
D = 0.20
D = 0.10
D = 0.05
(°C/W)
thJC
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
0.1
.01
0.00001 0.0001 0.001 0.01 0.1
Fig. 4 - Max. Thermal Impedance Z
10
Junction Capacitance - C
1
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics
thJC
3
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