VISHAY H11C4, H11C5, H11C6 Technical data
H11C4/ H11C5/ H11C6
1
2
3
6
5
4
G
A
C
A
C
NC
i179006
Vishay Semiconductors
Optocoupler, PhotoSCR Output, 400 V VRM, 5 A surge current
Features
• Turn on current (IFT), 5.0 mA typical
• Gate trigger current (I
• Surge anode current, 5.0 A
• Blocking voltage, 400 V gate trigger voltage (V
0.6 V typical
• Isolation test voltage 5300 V
• Solid State reliability
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
), 20 mA typical
GT
RMS
GT
),
e3
Pb
Pb-free
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
Description
The H11C4/ H11C5/ H11C6 are optically coupled
SCRs with a gallium arsenide infrared emitter and a
silicon photo SCR sensor. Switching can be achieved
while maintaining a high degree of isolation between
triggering and load circuits. These optocouplers can
Order Information
Part Remarks
H11C4 I
H11C5 I
H11C6 I
H11C4-X006 I
H11C6-X009 I
For additional information on the available options refer to
Option Information.
≤ 11 mA, DIP-6
FT
≤ 11 mA, DIP-6
FT
≤ 14 mA, DIP-6
FT
≤ 11 mA, DIP-6 400 mil (option 6)
FT
≤ 14 mA, SMD-6 (option 9)
FT
be used in SCR triac and solid state relay applications
where high blocking voltages and low input current
sensitivity are required.
The H11C4 and H11C5 are identical and have a maximum turn-on-current of 11 mA. The H11C6 has a
maximum of 14 mA.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Peak reverse voltage V
Forward continuous current I
Peak forward current 1.0 ms, 1 % Duty Cycle I
Power dissipation P
Derate linearly from 25 °C 1.33 mW/°C
Document Number 83610
Rev. 1.6, 26-Oct-04
RM
F
FM
diss
6.0 V
60 mA
3.0 A
100 mW
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1
H11C4/ H11C5/ H11C6
Vishay Semiconductors
Output
Parame te r Test condition Symbol Value Unit
Reverse gate voltage V
Anode voltage DC or AC peak V
RMS forward current I
Surge anode current 10 ms duration I
Peak forward current 100 µs, 1% Duty Cycle I
Surge gate current 5.0 ms duration I
Power dissipation P
RG
A
FRMS
AS
FM
GS
diss
Derate linearly from 25°C 13.3 mW/°C
Coupler
Parame te r Test condition Symbol Value Unit
Isolation test voltage (between
emitter and detector referred to
standard climate 23 °C/ 50 %
RH, DIN 50014)
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
= 25 °C R
amb
= 100 °C R
amb
Total package dissipation P
Derate linearly from 25 °C 5.5 mW/°C
Operating temperature range T
Storage temperature range T
Lead soldering time at 260 °C 10 sec.
V
ISO
IO
IO
tot
amb
stg
6.0 V
400 V
300 mA
5.0 A
10 A
200 mA
1000 mW
5300 V
RMS
175
12
≥ 10
11
≥ 10
400 mW
- 55 to + 100 °C
- 55 to + 150 °C
Ω
Ω
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parame te r Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
= 10 mA V
F
= 3.0 V I
R
= 0, f = 1.0 MHz C
R
F
R
O
1.2 1.5 V
10 µA
50 pF
Output
Parame te r Test condition Symbol Min Ty p. Max Unit
Forward blocking voltage R
Reverse blocking voltage R
On-state voltage I
Holding current R
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2
= 10 KΩ, TA = 100 °C,
GK
= 150 µA
I
d
= 10 KΩ, TA = 100 °C,
GK
I
= 150 µA
d
= 300 mA V
T
= 27 KΩ, VFX = 50 V I
GK
V
DM
V
DM
t
H
400 V
400 V
1.1 1.3 V
500 µA
Document Number 83610
Rev. 1.6, 26-Oct-04
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