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ELFA artikelnr
75-363-03 H11A1 Optokopplare
75-363-11 H11A2 Optokopplare
75-363-29 H11A3 Optokopplare
75-363-37 H11A4 Optokopplare
75-363-45 H11A5 Optokopplare
75-363-52 MCT2 Optokopplare
75-363-78 MCT270 Optokopplare
2002-01-04
75-363-86 MCT271 Optokopplare
75-363-94 MCT272 Optokopplare
75-364-02 MCT273 Optokopplare
75-364-10 MCT274 Optokopplare
75-364-28 MCT275 Otokopplare
75-364-36 MCT276 Optokopplare
75-364-44 MCT277 Optokopplare
75-364-51 4N25 Optokopplare
75-364-69 4N27 Optokopplare
75-364-77 4N35 Optokopplare
75-364-85 4N36 Optokopplare
75-364-93 4N37 Optokopplare
75-365-19 4N38 Optokopplare
PHOTOTRANSISTOR
Industry Standard
Single Channel
6 Pin DIP Optocoupler
DEVICE TYPES
Part No. CTR % Min. Part No. CTR % Min.
4N25 20 MCT2 20
4N26 20 MCT2E 20
4N27 10 MCT270 50
4N28 10 MCT271 45–90
4N35 100 MCT272 75–150
4N36 100 MCT273 125–250
4N37 100 MCT274 225–400
4N38 10 MCT275 70–90
H11A1 50 MCT276 15–60
H11A2 20 MCT277 100
H11A3 20
H11A4 10
H11A5 30
FEATURES
• Interfaces with Common Logic Families
• Input-output Coupling Capacitance < 0.5 pF
• Industry Standard Dual-in-line 6-pin Package
• Field Effect Stable by TRIOS
• 5300 V
Isolation Test Voltage
RMS
®
• Underwriters Laboratory File #E52744
V
DE
• VDE #0884 Approval Available with Option 1
APPLICATIONS
• AC Mains Detection
• Reed Relay Driving
• Switch Mode Power Supply Feedback
• Telephone Ring Detection
• Logic Ground Isolation
• Logic Coupling with High Frequency Noise
Rejection
Notes:
Designing with data sheet is covered in Application Note 45.
Dimensions in Inches (mm)
pin one ID
5
12
6
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
Anode
Cathode
NC
3°–9°
1
2
3
.300 (7.62)
.300–.347
(7.62–8.81)
typ.
18°
.010 (.25)
typ.
6
Base
5
Collector
4
Emitter
.114 (2.90)
.130 (3.0)
.248 (6.30)
.256 (6.50)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
3
4
.335 (8.50)
.343 (8.70)
DESCRIPTION
This data sheet presents five families of Infineon Industry Standard
Single Channel Phototransistor Couplers. These families include the
4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
277 devices.Each optocoupler consists of Gallium Arsenide infrared LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 V
Isolation Test Voltage. This isolation performance
RMS
is accomplished through Infineon double molding isolation manufacturing process. Compliance to VDE 0884 partial discharge isolation specification is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation voltages, is insured by incorporating a TRansparent lOn Shield
(TRIOS)
®
on the phototransistor substrate. These isolation processes and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.
The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–53 March 27, 2000-00
Ω
Ω
µ A
=0
µ
µ A
,
µ s
Maximum Ratings T
=25 ° C
A
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................60 mA
Surge Current (t ≤ 10 µ s)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 V
RMS
Creepage .............................................................................................. ≥ 7.0 mm
Clearance ............................................................................................. ≥ 7.0 mm
Isolation Thickness between Emitter and Detector............................... ≥ 0.4 mm
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
V
=500 V, T
IO
V
=500 V, T
IO
=25 ° C...............................................................................10
A
=100 ° C............................................................................ 10
A
12
11
Storage Temperature................................................................ –55 ° C to +150 ° C
Operating Temperature ............................................................ –55 ° C to +100 ° C
Junction Temperature................................................................................ 100 ° C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane ≥ 1.5 mm) ...................................................... 260 ° C
4N25/26/27/28—Characteristics T
=25 ° C
A
Emitter Symbol Min. Typ. Max. Unit Condition
Forward Voltage*
Reverse Current*
Capacitance
V
F
I
R
C
O
— 1.3 1.5 V
— 0.1 100
—25—pF
=50 mA
I
F
=3.0 V
V
R
V
R
Detector
Breakdown Voltage* Collector-Emitter BV
Emitter-Collector BV
Collector-Base BV
(dark)* 4N25/26/27
I
CEO
I
(dark)* — — 2.0 20 nA
CBO
4N28
Capacitance, Collector-Emitter
CEO
ECO
CBO
— — 5.0
C
CE
30 — — V
7.0 — —
70 — —
10
50
100
nA
— 6.0 — pF
=1.0 mA
I
C
I
=100
E
I
C
V
V
V
A
=100
=10 V, (base open)
CE
=10 V, (emitter open)
CB
=0
CE
Package
DC Current Transfer Ratio* 4N25/26 CTR 20 50 — %
V
CE
=10 V,
I
=10 mA
F
4N27/28 10 30 —
Isolation Voltage* 4N25
V
IO
2500 — — V Peak, 60 Hz
4N26/27 1500 — —
4N28 500 — —
Saturation Voltage, Collector-Emitter
Resistance, Input to Output*
Coupling Capacitance
Rise and Fall Times
* Indicates JEDEC registered values
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
V
CE(sat)
R
IO
C
IO
t
t
r
f
— — 0.5 V
100 — — G Ω
— 0.5 — pF f=1.0 MHz
— 2.0 —
2–54 March 27, 2000-00
I
=2.0 mA,
CE
=500 V
V
IO
=10 mA
I
F
V
=10 V, R
CE
=50 mA
I
F
=100 Ω
L
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