VISHAY H11-A1 VIS Datasheet

PRODUKTINFORMATION

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ELFA artikelnr
75-363-03 H11A1 Optokopplare
75-363-11 H11A2 Optokopplare
75-363-29 H11A3 Optokopplare
75-363-37 H11A4 Optokopplare
75-363-45 H11A5 Optokopplare
75-363-52 MCT2 Optokopplare
75-363-78 MCT270 Optokopplare

2002-01-04

75-363-86 MCT271 Optokopplare
75-363-94 MCT272 Optokopplare
75-364-02 MCT273 Optokopplare
75-364-10 MCT274 Optokopplare
75-364-28 MCT275 Otokopplare
75-364-36 MCT276 Optokopplare
75-364-44 MCT277 Optokopplare
75-364-51 4N25 Optokopplare
75-364-69 4N27 Optokopplare
75-364-77 4N35 Optokopplare
75-364-85 4N36 Optokopplare
75-364-93 4N37 Optokopplare
75-365-19 4N38 Optokopplare



PHOTOTRANSISTOR

Industry Standard

Single Channel

6 Pin DIP Optocoupler

DEVICE TYPES

Part No. CTR % Min. Part No. CTR % Min.

4N25 20 MCT2 20
4N26 20 MCT2E 20
4N27 10 MCT270 50
4N28 10 MCT271 45–90
4N35 100 MCT272 75–150
4N36 100 MCT273 125–250
4N37 100 MCT274 225–400
4N38 10 MCT275 70–90
H11A1 50 MCT276 15–60
H11A2 20 MCT277 100
H11A3 20
H11A4 10
H11A5 30

FEATURES

• Interfaces with Common Logic Families

• Input-output Coupling Capacitance < 0.5 pF

• Industry Standard Dual-in-line 6-pin Package

• Field Effect Stable by TRIOS

• 5300 V

Isolation Test Voltage

RMS

®

• Underwriters Laboratory File #E52744

V

DE

• VDE #0884 Approval Available with Option 1

APPLICATIONS

• AC Mains Detection

• Reed Relay Driving

• Switch Mode Power Supply Feedback

• Telephone Ring Detection

• Logic Ground Isolation

• Logic Coupling with High Frequency Noise
Rejection

Notes:

Designing with data sheet is covered in Application Note 45.

Dimensions in Inches (mm)

pin one ID

5

12

6

.048 (0.45)
.022 (0.55)

.130 (3.30)
.150 (3.81)

.031 (0.80) min.

.031 (0.80)
.035 (0.90)

.100 (2.54) typ.

Anode

Cathode

NC

3°–9°

1

2

3

.300 (7.62)

.300–.347

(7.62–8.81)

typ.

18°

.010 (.25)

typ.

6

Base

5

Collector

4

Emitter

.114 (2.90)

.130 (3.0)

.248 (6.30)
.256 (6.50)

.039

(1.00)

Min.

4°

typ.

.018 (0.45)
.022 (0.55)

3

4

.335 (8.50)
.343 (8.70)

DESCRIPTION

This data sheet presents five families of Infineon Industry Standard
Single Channel Phototransistor Couplers. These families include the
4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
277 devices.Each optocoupler consists of Gallium Arsenide infra­red LED and a silicon NPN phototransistor.

These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 V

Isolation Test Voltage. This isolation performance

RMS

is accomplished through Infineon double molding isolation manu­facturing process. Compliance to VDE 0884 partial discharge isola­tion specification is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation volt­ages, is insured by incorporating a TRansparent lOn Shield
(TRIOS)

®

on the phototransistor substrate. These isolation pro­cesses and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.

The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.

2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–53 March 27, 2000-00



Ω

Ω

µ A

=0

µ

µ A

,

µ s

Maximum Ratings T

=25 ° C

A

Emitter

Reverse Voltage .......................................................................................... 6.0 V

Forward Current ........................................................................................60 mA

Surge Current (t ≤ 10 µ s)............................................................................... 2.5 A

Power Dissipation................................................................................... 100 mW

Detector

Collector-Emitter Breakdown Voltage........................................................... 70 V

Emitter-Base Breakdown Voltage................................................................ 7.0 V

Collector Current ....................................................................................... 50 mA

Collector Current(t <1.0 ms).................................................................... 100 mA

Power Dissipation................................................................................... 150 mW

Package

Isolation Test Voltage.......................................................................... 5300 V

RMS

Creepage .............................................................................................. ≥ 7.0 mm

Clearance ............................................................................................. ≥ 7.0 mm

Isolation Thickness between Emitter and Detector............................... ≥ 0.4 mm

Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175

Isolation Resistance

V

=500 V, T

IO

V

=500 V, T

IO

=25 ° C...............................................................................10

A

=100 ° C............................................................................ 10

A

12

11

Storage Temperature................................................................ –55 ° C to +150 ° C

Operating Temperature ............................................................ –55 ° C to +100 ° C

Junction Temperature................................................................................ 100 ° C

Soldering Temperature (max. 10 s, dip soldering:

distance to seating plane ≥ 1.5 mm) ...................................................... 260 ° C

4N25/26/27/28—Characteristics T

=25 ° C

A

Emitter Symbol Min. Typ. Max. Unit Condition

Forward Voltage*

Reverse Current*

Capacitance

V

F

I

R

C

O

— 1.3 1.5 V

— 0.1 100

—25—pF

=50 mA

I

F

=3.0 V

V

R

V

R

Detector

Breakdown Voltage* Collector-Emitter BV

Emitter-Collector BV

Collector-Base BV

(dark)* 4N25/26/27

I

CEO

I

(dark)* — — 2.0 20 nA

CBO

4N28

Capacitance, Collector-Emitter

CEO

ECO

CBO

— — 5.0

C

CE

30 — — V

7.0 — —

70 — —

10

50
100

nA

— 6.0 — pF

=1.0 mA

I

C

I

=100

E

I

C

V

V

V

A

=100

=10 V, (base open)

CE

=10 V, (emitter open)

CB

=0

CE

Package

DC Current Transfer Ratio* 4N25/26 CTR 20 50 — %

V

CE

=10 V,

I

=10 mA

F

4N27/28 10 30 —

Isolation Voltage* 4N25

V

IO

2500 — — V Peak, 60 Hz

4N26/27 1500 — —

4N28 500 — —

Saturation Voltage, Collector-Emitter

Resistance, Input to Output*

Coupling Capacitance

Rise and Fall Times

* Indicates JEDEC registered values

2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

V

CE(sat)

R

IO

C

IO

t

t

r

f

— — 0.5 V

100 — — G Ω

— 0.5 — pF f=1.0 MHz

— 2.0 —

2–54 March 27, 2000-00

I

=2.0 mA,

CE

=500 V

V

IO

=10 mA

I

F

V

=10 V, R

CE

=50 mA

I

F

=100 Ω

L



°

4N35/36/37/38—Characteristics T

=25 ° C

A

Emitter Symbol Min. Typ. Max. Unit Condition

Forward Voltage*

Reverse Current*

Capacitance C

V

F

I

R

O

1.3 1.5

0.9

0.1 10

25 — pF VR=0, f=1.0 MHz

1.7

V

µ

I

=10 mA

F

I

=10 mA, T

F

A VR=6.0 V

Detector

Breakdown Voltage, Collector-Emitter* 4N35/36/37 BV

CEO

30 — — V IC=1.0 mA

4N38 80 — —

Breakdown Voltage, Emitter-Collector* BV

Breakdown Voltage, Collector-Base* 4N35/36/37 BV

ECO

CBO

7.0 — — V IE=100 µA

70 — — V IC=100 µA, IB=1.0 µA

4N38 80 — — —

Leakage Current, Collector-Emitter* 4N35/36/37 I

4N38 — — 50 V

Leakage Current, Collector-Emitter* 4N35/36/37 I

4N38 — 6.0 — V

Capacitance, Collector-Emitter C

CEO

CEO

CE

— 5.0 50 nA VCE=10 V, IF=0

=60 V, IF=0

CE

— — 500 µA VCE=30 V, IF=0, TA=100°C

=60 V, IF=0, TA=100°C

CE

— 6.0 — pF VCE=0

Package

DC Current Transfer Ratio* 4N35/36/37 CTR 100 — — % V

4N38 20 — — V

DC Current Transfer Ratio* 4N35/36/37 CTR 40 50 — % V

4N38 — — 30 — —

Resistance, Input to Output* R

Coupling Capacitance C

Switching Time*

* Indicates JEDEC registered value

IO

IO

t

, t

ON

OFF

11

10

——

Ω

— 0.5 — pF f=1.0 MHz

—10—µsIC=2.0 mA, RL=100 Ω, VCC=10 V

=10 V, IF=10 mA,

CE

=1.0 V, IF=20 mA

CE

=10 V, IF=10 mA,

CE

=–55 to 100°C

T

A

VIO=500 V

=–55

A

C

H11A1 through H11A5—Characteristics T

=25 ° C

A

Emitter Symbol Min. Typ. Max. Unit Condition

Forward Voltage H11A1–H11A4 V

F

— 1.1 1.5 V IF=10 mA

H11A5 — 1.1 1.7

Reverse Current I

Capacitance C

R

0

——10µA VR=3.0 V

—50—pFVR=0, f=1.0 MHz

Detector

Breakdown Voltage, Collector-Emitter BV

Breakdown Voltage, Emitter-Collector BV

Breakdown Voltage, Collector-Base BV

Leakage Current, Collector-Emitter I

CEO

Capacitance, Collector-Emitter C

CEO

ECO

CBO

CE

30 — — V IC=1.0 mA, IF=0 mA

7.0 — — V IE=100 µA, IF=0 mA

70 — — V IC=10 µA, IF=0 mA

— 5.0 50 nA VCE=10 V, IF=0 mA

— 6.0 — pF VCE=0

Package

DC Current Transfer Ratio H11A1 CTR 50 — — %

V

=10 V, IF=10 mA

CE

H11A2/3 20 — —

H11A4 10 — —

H11A5 30 — —

Saturation Voltage, Collector-Emitter V

Capacitance, Input to Output C

Switching Time

CE

IO

t

, t

ON

— — 0.4 V ICE=0.5 mA, IF=10 mA

sat

— 0.5 — pF —

— 3.0 — µs IC=2.0 mA, RL=100 Ω, VCE=10 V

OFF

2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–55 March 27, 2000-00

MCT2/MCT2E—Characteristics TA=25°C

Emitter Symbol Min. Typ. Max. Unit Condition

Forward Voltage V

Reverse Current I

Capacitance C

F

R

O

— 1.1 1.5 V IF=20 mA

——10µA VR=3.0 V

—25—pF VR=0, f=1.0 MHz

Detector

Breakdown Voltage Collector-Emitter BV

Emitter-Collector BV

Collector-Base BV

Leakage Current Collector-Emitter I

Collector-Base I

Capacitance, Collector-Emitter — C

CEO

ECO

CBO

CBO

CBO

CE

30 — — V IC=1.0 mA, IF=0 mA

7.0 — — IE=100 µA, IF=0 mA

70 — — IC=10 µA, IF=0 mA

— 5.0 50 nA V

=10 V, IF=0

E

C

— — 20 —

—10—pF VCE=0

Package

DC Current Transfer Ratio CTR 20 60 — %

Capacitance, Input to Output

Resistance, Input to Output R

Switching Time

C

t

ON

O

I

IO

, t

— 0.5 — pF —

— 100 — GΩ —

— 3.0 — µs IC=2.0 mA, RL=100 Ω, VCE=10 V

OFF

V

=10 V, IF=10 mA

CE

MCT270 through MCT277—Characteristics T

=25°C

A

Emitter Symbol Min. Typ. Max. Unit Condition

Forward Voltage V

Reverse Current I

Capacitance C

F

R

O

——

——

—

1.5 V IF=20 mA

10 µA VR=3.0 V

25

pF VR=0, f=1.0 MHz

—

Detector

Breakdown Voltage Collector-Emitter BV

Emitter-Collector BV

Collector-Base BV

Leakage Current, Collector-Emitter I

CEO

CEO

ECO

CBO

30

——

7.0

——

70

———

——

V IC=10 µA, IF=0 mA

IE=10 µA, IF=0 mA

=10 µA, IF=0 mA

I

C

50 nA VCE=10 V, IF=0 mA

Package

DC Current Transfer Ratio MCT270 CTR 50 — —

% VCE=10 V, IF=10 mA

MCT271 45 — 90

MCT272 75 — 150

MCT273 125 — 250

MCT274 225 — 400

MCT275 70 — 210

MCT276 15 — 60

MCT277 100 — —

Current Transfer Ratio, Collector–Emitter MCT271–276 CTR

MCT277 40 — —

Collector–Emitter Saturation Voltage

Capacitance, Input to Output C

Resistance, Input to Output R

Switching Time MCT270/272

V

CE

IO

IO

tON, t

MCT271 — — 7.0

MCT273 — — 20

12.5 — —

CE

— — 0.4

sat

— 0.5 —

—1012—

——10

OFF

% VCE=0.4 V, IF=16 mA

—

V ICE=2.0 mA, IF=16 mA

pF —

Ω VIO=500 VDC

µs IC=2.0 mA,

R

=100 Ω,

L

V

=5.0 V

CE

MCT274 — — 25

MCT275/277 — — 15

MCT276 — — 3.5

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–56 March 27, 2000-00

Figure 1. Forward Voltage vs. Forward Current

1.4

1.3

1.2

1.1

1.0

0.9

- Forward Voltage - V

F

0.8

V

0.7

TA = –55°C

TA = 25°C

TA = 85°C

IF - Forward Current - mA

Figure 4. Normalized Non-saturated and Saturated
CTR, T

100101.1

=70°C vs. LED Current

A

1.5

Normalized to:
Vce=10 V, I
CTRce(sat) Vce=0.4 V

=10 mA, TA=25°C

F

1.0

T

=70°C

A

0.5

NCTR - Normalized CTR

0.0

IF - LED Current - mA

NCTR(SAT)

NCTR

100101.1

Figure 2. Normalized Non-saturated and Saturated
CTR, TA=25°C vs. LED Current

1.5

Normalized to:
Vce=10 V, I
CTRce(sat) Vce=0.4 V

=10 mA, TA=25°C

F

1.0

=25°C

T

A

0.5

NCTR - Normlized CTR

NCTR(SAT)

NCTR

0.0
0 1 10 100

- LED Current - mA

I

F

Figure 3. Normalized Non-saturated and Saturated
CTR, T

=50°C vs. LED Current

A

1.5

Normalized to:
Vce=10 V, I
CTRce(sat) Vce=0.4 V

=10 mA, TA=25°C

F

1.0

T

=50°C

A

0.5

NCTR - Normalized CTR

0.0

IF - LED Current - mA

NCTR(SAT)

NCTR

Figure 5. Normalized Non-saturated and Saturated
CTR, TA=85°C vs. LED Current

1.5

Normalized to:
Vce=10 V, I
CTRce(sat) Vce = 0.4 V

=10 mA, TA=25°C

F

1.0

T

=85°C

A

0.5

NCTR - Normalized CTR

NCTR(SAT)
NCTR

0.0

100101.1

IF - LED Current - mA

Figure 6. Collector-emitter Current vs. Temperature
and LED Current

35

30

25

20

15

25°C

10

5

Ice - Collector Current - mA

0

100101.1

50°C

85°C

I

- LED Current - mA

F

70°C

6050403020100

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–57 March 27, 2000-00

Figure 7. Collector-emitter Leakage Current vs. Temp.

5

10

4

10

3

10

2

10

V

1

10

0

10

–1

10

Iceo - Collector-Emitter - nA

–2

10

Typical

TA - Ambient Temperature - °C

= 10 V

ce

100806040200–20

Figure 10. Normalized Non-saturated HFE vs. Base
Current and Temperature

1.2

1.0

–20°C

0.8

Normalized to:
Ib=20 µA, Vce=10 V, TA=25°C

0.6

NHFE - Normalized HFE

0.4

1 10 100 1000

Ib - Base Current - µA

70°C

50°C

25°C

Figure 8. Normalized CTRcb vs. LED Current and Temp.

1.5

Normalized to:
Vcb=9.3 V, IF=10 mA, TA=25°C

1.0

0.5
25°C
50°C

NCTRcb - Normalized CTRcb

0.0

70°C

.1 1 10 100

I

- LED Current - mA

F

Figure 9. Normalized Photocurrent vs. IF and Temp.

10

Normalized to:
IF=10 mA, TA=25°C

1

0.1

Normalized Photocurrent

Nib,
Nib,
Nib,
Nib,

TA=–20°C
TA=25°C
TA= 50°C
TA=70°C

0.01

.1 1 10 100

IF - LED Current - mA

Figure 11. Normalized HFE vs. Base Current and Temp.

1.5

70°C

50°C

1.0

25°C

–20°C

0.5

NHFE(sat) - Normalized

Vce=0.4 V

Saturated HFE

0.0

1 10 100 1000

Ib - Base Current - µA

Normalized to:
Vce=10 V, Ib=20 µA
TA=25°C

Figure 12. Propagation Delay vs. Collector Load Resistor

1000

100

10

- Propagation Delay - µs

PLH

t

IF=10 mA, TA=25°C
V

=5.0 V, Vth=1.5 V

CC

t

PHL

t

PLH

1

2.5

2.0

1.5

1.0

.1 1 10 100

RL - Collector Load Resistor - kΩ

- Propagation Delay - µs

PHL

t

Figure 13. Switching Timing

I

F

t

D

t

PHL

t

R

t

PLH

=1.5 V

V

TH

t

t

F

S

V

O

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

Figure 14. Switching Schematic

VCC = 5.0 V

F=10 KHz,
DF=50%

IF=10 mA

2–58 March 27, 2000-00

R

L

V

O