Single-Line ESD-Protection in SOT23
Features
• Single-line ESD-protection device
• ESD-immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Space saving SOT23 package
• Lead (Pb)-free component
• Lead finish = "e3" = matte tin (Sn)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Marking (example only)
YYY
XX
XX
20357
e3
20512
YYY = Type code (see table below)
XX = Date code
GSOT03 to GSOT36
Vishay Semiconductors
3
2
1
1
20421
Ordering Information
Device name Ordering code
GSOT03 GSOT03-GS08 3000 15000
GSOT04 GSOT04-GS08 3000 15000
GSOT05 GSOT05-GS08 3000 15000
GSOT08 GSOT08-GS08 3000 15000
GSOT12 GSOT12-GS08 3000 15000
GSOT15 GSOT15-GS08 3000 15000
GSOT24 GSOT24-GS08 3000 15000
GSOT36 GSOT36-GS08 3000 15000
Taped units per reel
(8 mm tape on 7" reel)
Minimum order quantity
Package Data
Device name
GSOT03 SOT23 03 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT04 SOT23 04 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT05 SOT23 05 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT08 SOT23 08 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT12 SOT23 12 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT15 SOT23 15 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT24 SOT23 24 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT36 SOT23 36 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
Package
name
Marking
code
Weight
Molding compound
flammability rating
Moisture sensitivity level Soldering conditions
Document Number 85807
Rev. 1.7, 21-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
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1
GSOT03 to GSOT36
Vishay Semiconductors
Absolute Maximum Ratings
GSOT03
Rating Test con d iti o n Symbol Val ue Unit
Peak pulse current
Peak pulse power
ESD immunity
Acc. IEC 61000-4-5, t
Acc. IEC 61000-4-5, t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature Junction temperature
Storage temperature
GSOT04
Rating Test con d iti o n Symbol Val ue Unit
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature Junction temperature
Storage temperature
Acc. IEC 61000-4-5, t
Acc. IEC 61000-4-5, t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Pin 3 to 1
= 8/20 µs; single shot
P
Pin 3 to 1
= 8/20 µs; single shot
P
Pin 3 to 1
= 8/20 µs; single shot
P
Pin 3 to 1
= 8/20 µs; single shot
P
I
PPM
P
V
V
T
I
PPM
P
V
V
T
PP
ESD
ESD
T
J
STG
PP
ESD
ESD
T
J
STG
30 A
369 W
± 30 kV
± 30 kV
- 40 to + 125 °C
- 55 to + 150 °C
30 A
429 W
± 30 kV
± 30 kV
- 40 to + 125 °C
- 55 to + 150 °C
GSOT05
Rating Test con d iti o n Symbol Val ue Unit
Peak pulse current
Peak pulse power
ESD immunity
Acc. IEC 61000-4-5, t
Acc. IEC 61000-4-5, t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Pin 3 to 1
= 8/20 µs; single shot
P
Pin 3 to 1
= 8/20 µs; single shot
P
Operating temperature Junction temperature
Storage temperature
GSOT08
Rating Test con d iti o n Symbol Val ue Unit
Peak pulse current
Peak pulse power
ESD immunity
Acc. IEC 61000-4-5, t
Acc. IEC 61000-4-5, t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature Junction temperature
Storage temperature
Pin 3 to 1
= 8/20 µs; single shot
P
Pin 3 to 1
= 8/20 µs; single shot
P
I
PPM
P
V
V
T
I
PPM
P
V
V
T
PP
ESD
ESD
T
J
STG
PP
ESD
ESD
T
J
STG
30 A
480 W
± 30 kV
± 30 kV
- 40 to + 125 °C
- 55 to + 150 °C
18 A
345 W
± 30 kV
± 30 kV
- 40 to + 125 °C
- 55 to + 150 °C
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For technical support, please contact: ESD-Protection@vishay.com
Document Number 85807
Rev. 1.7, 21-Apr-08
GSOT12
Rating Test condition Symbol Value Unit
Peak pulse current
Peak pulse power
ESD immunity
Acc. IEC 61000-4-5, t
Acc. IEC 61000-4-5, t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Pin 3 to 1
= 8/20 µs; single shot
P
Pin 3 to 1
= 8/20 µs; single shot
P
Operating temperature Junction temperature
Storage temperature
GSOT15
Rating Test condition Symbol Value Unit
Peak pulse current
Peak pulse power
ESD immunity
Acc. IEC 61000-4-5, t
Acc. IEC 61000-4-5, t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature Junction temperature
Storage temperature
Pin 3 to 1
= 8/20 µs; single shot
P
Pin 3 to 1
= 8/20 µs; single shot
P
GSOT03 to GSOT36
Vishay Semiconductors
I
P
V
V
T
I
P
V
V
T
PPM
PP
ESD
ESD
T
STG
PPM
PP
ESD
ESD
T
STG
J
J
12 A
312 W
± 30 kV
± 30 kV
- 40 to + 125 °C
- 55 to + 150 °C
8A
230 W
± 30 kV
± 30 kV
- 40 to + 125 °C
- 55 to + 150 °C
GSOT24
Rating Test condition Symbol Value Unit
Peak pulse current
Peak pulse power
ESD immunity
Acc. IEC 61000-4-5, t
Acc. IEC 61000-4-5, t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Pin 3 to 1
= 8/20 µs; single shot
P
Pin 3 to 1
= 8/20 µs; single shot
P
Operating temperature Junction temperature
Storage temperature
GSOT36
Rating Test condition Symbol Value Unit
Peak pulse current
Peak pulse power
ESD immunity
Acc. IEC 61000-4-5, t
Acc. IEC 61000-4-5, t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature Junction temperature
Storage temperature
Pin 3 to 1
= 8/20 µs; single shot
P
Pin 3 to 1
= 8/20 µs; single shot
P
I
P
V
V
T
I
P
V
V
T
PPM
PP
ESD
ESD
T
STG
PPM
PP
ESD
ESD
T
STG
5A
235 W
± 30 kV
± 30 kV
J
- 40 to + 125 °C
- 55 to + 150 °C
3.5 A
248 W
± 30 kV
± 30 kV
J
- 40 to + 125 °C
- 55 to + 150 °C
Document Number 85807
Rev. 1.7, 21-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
3
GSOT03 to GSOT36
Vishay Semiconductors
BiAs-Mode (1-line Bidirectional Asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1
connected to ground and pin 3 connected to a signal- or data-line which has to be protected. As long as the
voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse
Working Voltage (V
The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (V
the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is
Bi
directional and Asymmetrical (BiAs).
L1
) the protection diode between pin 2 and pin 3 offer a high isolation to the ground line.
RWM
) is defined by the BReakthrough Voltage (VBR) level
C
) clamps the negative transient close to
F
3
1
2
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified
GSOT03
BiAs mode (between pin 3 to 1)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 100 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at I
R
= 3.3 V I
at V
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
at V
= 1.6 V; f = 1 MHz C
R
= 30 A V
PPM
= 1 A V
PP
= I
= 30 A V
PPM
N
lines
RWM
R
BR
C
C
F
F
D
D
20422
1 lines
3.3 V
100 µA
44.6 V
5.7 7.5 V
10 12.3 V
11.2V
4.5 V
420 600 pF
260 pF
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Document Number 85807
Rev. 1.7, 21-Apr-08
GSOT04
BiAs mode (between pin 3 to 1)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 20 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at I
R
at V
= 4 V I
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
at V
= 2 V; f = 1 MHz C
R
= 30 A V
PPM
= 1 A V
PP
= I
= 30 A V
PPM
GSOT05
BiAs mode (between pin 3 to 1)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
at I
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at V
at V
= 10 µA V
R
= 5 V I
at V
R
at I
= 1 mA V
R
= 1 A V
at I
PP
= I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
R
= 2.5 V; f = 1 MHz C
R
= 30 A V
PPM
= 1 A V
PP
= I
= 30 A V
PPM
GSOT03 to GSOT36
Vishay Semiconductors
N
N
lines
RWM
R
BR
C
C
F
F
D
D
lines
RWM
R
BR
C
C
F
F
D
D
4V
56.1 V
7.5 9 V
11.2 14.3 V
11.2V
4.5 V
310 450 pF
200 pF
5V
66.8 V
78.7V
12 16 V
11.2V
4.5 V
260 350 pF
150 pF
1 lines
20 µA
1 lines
10 µA
GSOT08
BiAs mode (between pin 3 to 1)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 5 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
Document Number 85807
Rev. 1.7, 21-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
at I
R
at V
= 8 V I
R
= 1 mA V
at I
R
at I
= 1 A V
PP
= I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
= 4 V; f = 1 MHz C
at V
R
= 18 A V
PPM
= 1 A V
PP
= I
= 18 A V
PPM
N
lines
RWM
R
BR
C
C
F
F
D
D
1 lines
8V
5µA
910 V
10.7 13 V
15.2 19.2 V
11.2V
3V
160 250 pF
80 pF
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GSOT03 to GSOT36
Vishay Semiconductors
GSOT12
BiAs mode (between pin 3 to 1)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 1 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
GSOT15
BiAs mode (between pin 3 to 1)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at I
R
at V
= 12 V I
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
at V
= 6 V; f = 1 MHz C
R
at I
at V
at I
at I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
= 7.5 V; f = 1 MHz C
at V
R
= 12 A V
PPM
= 1 A V
PP
= I
= 12 A V
PPM
= 1 µA V
R
= 15 V I
R
= 1 mA V
R
= 1 A V
PP
= I
= 8 A V
PPM
= 1 A V
PP
= I
= 8 A V
PPM
N
N
lines
RWM
R
BR
C
C
F
F
D
D
lines
RWM
R
BR
C
C
F
F
D
D
1 lines
12 V
1µA
13.5 15 V
15.4 18.7 V
21.2 26 V
11.2V
2.2 V
115 150 pF
50 pF
1 lines
15 V
1µA
16.5 18 V
19.4 23.5 V
24.8 28.8 V
11.2V
1.8 V
90 120 pF
35 pF
GSOT24
BiAs mode (between pin 3 to 1)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 1 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
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at I
R
at V
= 24 V I
R
= 1 mA V
at I
R
at I
= 1 A V
PP
= I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
= 12 V; f = 1 MHz C
at V
R
= 5 A V
PPM
= 1 A V
PP
= I
= 5 A V
PPM
N
lines
RWM
R
BR
C
C
F
F
D
D
1 lines
24 V
1µA
27 30 V
34 41 V
41 47 V
11.2V
1.4 V
65 80 pF
20 pF
Document Number 85807
Rev. 1.7, 21-Apr-08
GSOT36
BiAs mode (between pin 3 to 1)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 1 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at I
R
at V
= 36 V I
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
at I
PP
at V
R
at V
= 18 V; f = 1 MHz C
R
= 3.5 A V
PPM
= 1 A V
at I
PP
= I
= 3.5 A V
PPM
= 0 V; f = 1 MHz C
Package Dimensions in millimeters (inches): SOT23
GSOT03 to GSOT36
Vishay Semiconductors
N
lines
RWM
R
BR
C
C
F
F
D
D
36 V
39 43 V
49 60 V
59 71 V
11.2V
1.3 V
52 65 pF
12 pF
1 lines
1µA
17418
Document Number 85807
Rev. 1.7, 21-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
7
GSOT03 to GSOT36
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85807
Rev. 1.7, 21-Apr-08
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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