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VISHAY
GSOT03 to GSOT36
ESD Protection Diode
Features
• Transient protection for data lines as per
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000-4-5 (Lightning) see I
Mechanical Data
Case: SOT-23 Plastic Package
Molding Compound Flammability Rating:
UL 94 V-0
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter Te s t co n di ti o n Symbol Value Unit
Peak power dissipation
Forward surge current 8.3 ms single half sine-wave I
1)
Non-repetitive current pulse and derated above TA = 25 °C,
for GSOT03, GSOT04, the peak power dissipation is 270 W
1)
below
PPM
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: 8 mg
8/20 µs pulse P
Vishay Semiconductors
3
12
PK
FSM
18078
300 W
7 A
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Paramete r Test c o n d ition Symbol Val ue Unit
Operation and storage
temperature range
T
stg
, T
J
- 55 to + 150 °C
Electrical Characteristics
Part Num ber Device
Marking
Code
GSOT03 03 3.3 4.0 6.5 7.5 18 125 800
GSOT04 04 4.0 5.0 8.5 10.5 17 125 800
GSOT05 05 5.0 6.0 9.8 12.5 17 100 550
GSOT08 08 8.0 8.5 13.4 15.0 15 10 400
GSOT12 12 12.0 13.3 19.0 28.0 12 2 185
GSOT15 15 15.0 16.7 24.0 35.0 10 1 140
GSOT24 24 24.0 26.7 43.0 60.0 5 1 83
GSOT36 36 36.0 40 60.0 75.0 2 1 80
1)
8/20 µs waveform used (see figure 2)
Rated
Stand-off
Volta ge
V
WM
V V V I
Minimum
Breakdown
Vol ta ge
V
BR
@ 1 mA
Maximum
Clamping
Vol ta ge
V
C
@ IP = 1 A1)@ IP = 5 A
Maximum
Pulse Peak
Current
tp = 8/20 µs I
PPM
1)
A @ V
Maximum
Leakage
Current
D
µA pF
WM
@ 0 V, 1 MHz
Maximum
Capacitance
C
Document Number 85807
Rev. 2, 02-Jun-03
www.vishay.com
1
GSOT03 to GSOT36
Vishay Semiconductors
VISHAY
Typical Characteristics (T
10000
1000
300W, 8/20µs waveshape
100
- Peak Pulse Power (W)
PPM
P
10
0.1 1.0 10
17476
td - Pulse Duration ( µ s)
100 1000 10000
= 25 °C unless otherwise specified)
amb
Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time
110
RSM
- Peak Pulse Current, % I
PPM
I
17477
100
90
80
70
60
50
40
30
20
10
0
0
105
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
I
PP
td=
2
15 20 30
t - Time ( µs)
PPM
25
100
80
60
40
% Of Rated Power
20
0
0
17478
www.vishay.com
2
Figure 2. Pulse Waveform
Peak Pulse Power
8/20 µ s
Average Power
5025
75 100
TL- Lead Temperature °C
Figure 3. Power Derating
125 150
Document Number 85807
Rev. 2, 02-Jun-03
VISHAY
Package Dimensions in Inches (mm)
.12 2 ( 3.1)
.110 (2.8)
.016 ( 0.4)
GSOT03 to GSOT36
Vishay Semiconductors
3
1
.037( 0.95)
.016 ( 0.4) .016 ( 0.4)
2
.037( 0.95)
Top View
)
)
.056 ( 1 .43
.052 ( 1 .33
ma x . .004 ( 0 .1 )
.007 ( 0.17 5 )
.005 ( 0 .1 25)
.045 ( 1 .15)
.037 ( 0 .95)
.102 ( 2.6)
.094 ( 2.4)
17418
Document Number 85807
Rev. 2, 02-Jun-03
www.vishay.com
3
GSOT03 to GSOT36
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85807
Rev. 2, 02-Jun-03
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