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ESD Protection Diode Array
GMF05C
Vishay Semiconductors
6
Features
• Transient protection for data lines as per
CW
VY
GM1
IEC 61000 - 4 - 2 (ESD) 15 kV (air), 8 kV
(contact), IEC 61000 - 4 - 5 (Lightning)
12 A (tp = 8/20 µs)
• Small package for use in portable electronics
• Bidirectional protection of 4 I/O lines
• Unidirectional protection of 5 I/O lines
• Low leakage current
• Ideal for cellular handsets, cordless phones, notebooks, handhelds and digital cameras
e3
1
18538-2
VY - V = Vishay
Y = year, is variable for digit from 0 to 9
(e.g. 4 = 2004, 5 = 2005)
CW = Calendar Week, is variable for number from 01 to 52
GM1 = code for GMF05C
1
Mechanical Data
Case: SOT-363 Plastic case
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: approx. 6.0 mg
Parts Table
Part Ordering code Marking Remarks
GMF05C GMF05C-GS08 GM1 Tape and Reel
4
5
23
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter Test condition Symbol Value Unit
Peak pulse power 8/20 µs waveform P
Peak pulse current 8/20 µs waveform I
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter Test condition Symbol Value Unit
Operating temperature T
Storage temperature T
Document Number 85833
Rev. 1.1, 02-Mar-05
ppm
pp
STG
200 W
12 A
j
- 55 to + 125 °C
- 55 to + 150 °C
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1
GMF05C
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Reverse stand-off voltage V
Reverse breakdown voltage I
Reverse leakage current V
Clamping voltage I
Peak forward voltage I
Junction capacitance between I/
= 1 mA V
t
= 5 V I
RWM
= 1 A, 8/20 µs waveform V
PP
= 12 A, 8/20 µs waveform V
I
PP
= 1 A, 8/20 µs waveform V
F
= 0 V, f = 1 MHz C
V
R
O pins and Gnd
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
RWM
BR
R
C
C
F
j
6V
1.5 V
VISHAY
5V
1 µA
9.5 V
12.5 V
150 pF
10
1
0.1
- Peak Pulse Power (kW)
PPM
P
0.01
0.1 1.0 10
ggmf05c-hs3_01
td - Pulse Duration (µs)
100 1000
Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time
)
100
PP
75
) or Current (I
PP
50
25
Derating in Percentage, %
Peak Pulse Power (P
0
ggmf05c-hs3_02
0
TA- AmbientTemperature (°C)
7525 50
100 125
150 175
Figure 2. Pulse Derating Curve
110
100
RSM
90
80
70
60
50
40
30
- Peak Pulse Current, % I
20
PPM
I
10
0
ggmf05c-hs3_03
0
105
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
I
PP
td=
2
15 20 30
t-
Time (
µs)
Figure 3. Pulse Waveform
20
18
16
14
12
10
8
6
- Clamping Voltage (V)
C
4
V
2
0
ggmf05c-hs3_04
0
42
IPP- Peak Pulse Current (A)
68 14
10 12
Figure 4. Clamping Voltage vs. Peak Pulse Current
PPM
25
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2
Document Number 85833
Rev. 1.1, 02-Mar-05
VISHAY
SOeto
d
Package Dimensions in mm (Inches)
GMF05C
Vishay Semiconductors
0.10 (0.004)
0.30 (0.012)
0.20 (0.009)
0.65 (0.026)
10
2.20 (0.087)
1.80 (0.071)
1.3 (0.052)
1.00 (0.039)
0.80 (0.031)
1.35 (0.053)
1.15 (0.045)
2.20 (0.087)
2.00 (0.079)
0.25 (0.010)
0.10 (0.004)
Mounting Pad Layout
0.35 (0.014)
1.60 (0.063)
1.30 (0.052) Ref.
0.90 (0.035)
0.65 (0.026) Ref.
14280
Document Number 85833
Rev. 1.1, 02-Mar-05
www.vishay.com
3
GMF05C
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85833
Rev. 1.1, 02-Mar-05
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