VISHAY GBPC 3502 VIS Datasheet

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GBPCGBPC-W

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Glass Passivated Single-Phase Bridge Rectifier

PRIMARY CHARACTERISTICS

Package GBPC, GBPC-W

I

F(AV)

V

RRM

I

FSM

I

R

V

at I

F

F

T

max. 150 °C

J

Diode variations Quad

12 A, 15 A, 25 A, 35 A

200 A, 300 A, 300 A, 400 A

50 V to 1000 V

5 μA

1.1 V

GBPC12, GBPC15, GBPC25, GBPC35

Vishay General Semiconductor

FEATURES

• UL recognition file number E54214

• Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting

• Typical IR less than 0.3 μA

• High surge current capability

• Low thermal resistance

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification
for power supply, home appliances, office equipment,
industrial automation applications.

MECHANICAL DATA

Case: GBPC, GBPC-W
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade

Terminals: Nickel plated on faston lugs or silver plated on
wire leads, solderable per J-STD-002 and JESD22-B102.
Suffix letter “W” added to indicate wire leads
(e.g. GBPC12005W).

Polarity: As marked, positive lead by beveled corner

Mounting Torque: 20 inches-lbs. max.

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL

Maximum repetitive peak reverse voltage V

Maximum RMS voltage V

Maximum DC blocking voltage V

GBPC12

Maximum average forward rectified
output current (Fig. 1)

Peak forward surge current single
sine-wave superimposed on rated load

Rating (non-repetitive, for t greater than
1 ms and less than 8.3 ms) for fusing

RMS isolation voltage from case to leads V

Operating junction storage temperature range T

GBPC15 15

GBPC25 25

GBPC35 35

GBPC12

GBPC15 300

GBPC25 300

GBPC35 400

GBPC12

GBPC15 375

GBPC25 375

GBPC35 660

Revision: 21-Feb-14

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I

F (AV)

I

FSM

, T

J

RRM

RMS

DC

2

I

ISO

005 01 02 04 06 08 10

50 100 200 400 600 800 1000 V

35 70 140 280 420 560 700 V

50 100 200 400 600 800 1000 V

t

STG

1

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GBPC12, 15, 25, 35

12

200

160

2500 V

- 55 to + 150 °C

Document Number: 88612

UNIT

A

A

A2s

GBPC12, GBPC15, GBPC25, GBPC35

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ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

GBPC12 I

Maximum instantaneous
forward drop per diode

GBPC15 I

GBPC25 I

GBPC35 I

Maximum reverse DC current at rated
DC blocking voltage per diode

Typical junction capacitance per diode 4 V, 1 MHz C

TEST

CONDITIONS

= 6.0 A

F

= 7.5 A

F

= 12.5 A

F

= 17.5 A

F

= 25 °C

T

A

= 125 °C 500

T

A

SYMBOL

V

F

I

R

J

005 01 02 04 06 08 10

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL

Typical thermal resistance

GBPC12 to GBPC25

GBPC35 1.4

R

JC

Notes

(1)

With heatsink

(2)

Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw

005 01 02 04 06 08 10

(1)

Vishay General Semiconductor

GBPC12, 15, 25, 35

1.1 V

5.0

300 pF

GBPC12, 15, 25, 35

1.9

UNIT

μA

UNIT

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

GBPC1206-E4/51 15.79 51 100 Paper box

GBPC1506-E4/51 15.79 51 100 Paper box

GBPC2506-E4/51 15.79 51 100 Paper box

GBPC3506-E4/51 15.79 51 100 Paper box

GBPC1206W-E4/51 13.8 51 100 Paper box

GBPC1506W-E4/51 13.8 51 100 Paper box

GBPC2506W-E4/51 13.8 51 100 Paper box

GBPC3506W-E4/51 13.8 51 100 Paper box

Revision: 21-Feb-14

For technical questions within your region: [e-mail]

2

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Document Number: 88612

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

1

10

10

1000

GBPC35

GBPC15
GBPC25

GBPC12

TJ = TJ Max.

0.5 ms Single Sine-Wave

100

100

1.0 Cycle

0

20

40

60

80

100

0.1

1

10

100

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (µA)

30

50

70

90

1000

TA = 100 °C

TA = 150 °C

T

A

= 125 °C

TA = 25 °C

10

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

GBPC12, GBPC15, GBPC25, GBPC35

Vishay General Semiconductor

40

35

30

25

20

15

10

60 Hz

Average Forward Current (A)

5

Resistive or
Inductive Load

0

25

0

50

75

Bridges Mounted on

9.5 x 3.5 x 4.6"
(22.9 x 8.9 x 11.7 cm)
AL, Finned Plate

5 x 6 x 4.9"
AL, Finned Plate

5 x 4 x 3"
AL, Finned Plate

100

125

Case Temperature (°C)

Fig. 1 - Maximum Output Rectified Current

40

GBPC35
R

= 0.5 °C/W

thSA

35

30

GBPC25
R

= 0.5 °C/W

thSA

25

20

GBPC15
R

= 1.0 °C/W

thSA

15

10

GBPC12

Average Forward Current (A)

R

= 1.0 °C/W

5

thSA

0

10

20

0

30

40

50

60

Ambient Temperature (°C)

Fig. 2 - Maximum Output Rectified Current

6 x 2.2 x 2.2"
AL, Finned Plate

150

175

60 Hz
Resistive or
Inductive Load

70

80

90

200

100

Fig. 4 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

100

TA = 150 °C

T

= 125 °C

10

1

A

TA = 100 °C

TA = 25 °C

Instantaneous Forward Current (A)

0.1

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

Instantaneous Forward Voltage (V)

Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode

80

70

60

50

40

30

20

10

Average Power Dissipation of Bridge (W)

0

0

Revision: 21-Feb-14

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Capacitive Load

TJ = TJ Max.

Resistive or
Inductive Load

10

Average Output Current (A)

20

30

Fig. 3 - Maximum Power Dissipation

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

40

Fig. 6 - Typical Reverse Leakage Characteristics Per Diode

3

Document Number: 88612

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GBPC12, GBPC15, GBPC25, GBPC35

1

10

100

10

100

1000

TJ = 25 °C
f = 1.0 MHz
V

sig

= 50 mVp-p

Reverse Voltage (V)

Junction Capacitance (pF)

0.01

0.1

1

10

100

1

10

100

1000

TJ = 25 °C
f = 1.0 MHz
V

sig

= 50 mVp-p

t - Heating Time (s)

Transient Thermal Impedance (°C/W)

1.135 (28.8)

1.115 (28.3)

0.732 (18.6)

0.692 (17.6)

0.470 (11.9)

0.430 (10.9)

0.042 (1.07)

0.038 (0.97)
DIA.

0.310 (7.87)

0.290 (7.36)

1.25

(31.8)

MIN.

1.135 (28.8)

1.115 (28.3)

0.732 (18.6)

0.692 (17.6)

Hole for

#10 Screw

0.220 (5.59)

0.200 (5.08)

DIA.

0.24 (6.0)

0.18 (4.6)

0.50 (12.7)

0.44 (11.7)

0.24 (6.0)

0.18 (4.6)

GBPC-W GBPC

1.135 (28.8)

1.115 (28.3)

0.672 (17.1)

0.632 (16.1)

0.732 (18.6)

0.692 (17.6)

0.094 (2.4)
DIA.

0.034 (0.86)

0.030 (0.76)

0.25

(6.35)

AC

0.840 (21.3)

0.740 (18.8)

0.582 (14.8)

0.542 (13.8)

0.672 (17.1)

0.632 (16.1)

1.135 (28.8)

1.115 (28.3)

0.310 (7.87)

0.290 (7.36)

0.034 (0.86)

0.030 (0.76)

Hole for

#10 Screw

0.220 (5.59)

0.200 (5.08)

DIA.

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Fig. 7 - Typical Junction Capacitance Per Diode Fig. 8 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Vishay General Semiconductor

Revision: 21-Feb-14

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Document Number: 88612

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

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Document Number: 91000