Vishay GB75YF120N Data Sheet

GB75YF120N

Vishay High Power Products

IGBT Fourpack Module, 75 A

ECONO2 4PACK

PRODUCT SUMMARY

VCES	1200 V
IC at TC = 67 °C	75 A
VCE(on) (typical)	3.4 V

FEATURES
• Square RBSOA
• HEXFRED® low Q , low switching energy
rr	RoHS
• Positive VCE(on) temperature coefficient	COMPLIANT

•Copper baseplate

•Low stray inductance design

•Speed 8 to 60 kHz

•Designed and qualified for industrial market

BENEFITS

•Benchmark efficiency for SMPS appreciation in particular HF welding

•Rugged transient performance

•Low EMI, requires less snubbing

•Direct mounting to heatsink space saving

•PCB solderable terminals

•Low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS	MAX.	UNITS
	Collector to emitter voltage	VCES		1200	V
	Continuous collector current	IC	TC = 25 °C	100
			TC = 80 °C	67
	Pulsed collector current	ICM		200
	See fig. C.T.5
					A
	Clamped inductive load current	ILM		200
	Diode continuous forward current	IF	TC = 25 °C	40
			TC = 80 °C	25
	Diode maximum forward current	IFM		150
	Gate to emitter voltage	VGE		± 20	V
	Maximum power dissipation (IGBT)	PD	TC = 25 °C	480	W
			TC = 80 °C	270
	Maximum operating junction temperature	TJ		150	°C
	Storage temperature range	TStg		- 40 to + 125
	Isolation voltage	VISOL		AC 2500 (MIN)	V

Document Number: 93654	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 01-Sep-08		1

GB75YF120N

Vishay High Power Products IGBT Fourpack Module, 75 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER		SYMBOL	TEST CONDITIONS		MIN.			TYP.		MAX.	UNITS
Collector to emitter breakdown voltage		VBR(CES)	VGE = 0 V, IC = 500 µA		1200		-			-
			IC = 75 A, VGE = 15 V		-		3.4			4.0
Collector to emitter voltage		VCE(ON)	IC = 100 A, VGE = 15 V		-		3.8			4.5	V
			IC = 75 A, VGE = 15 V, TJ = 125 °C		-		4.0			4.5
			IC = 100 A, VGE = 15 V, TJ = 125 °C		-		4.53			5.1
Gate threshold voltage		VGE(th)	VCE = VGE, IC = 250 µA		4.0		5.0			6.0
Threshold voltage temperature coefficient		VGE(th)/ TJ	VCE = VGE, IC = 1 mA (25 °C to 125 °C)		-		- 11			-	mV/°C
Zero gate voltage collector current		ICES	VGE = 0 V, VCE = 1200 V		-		7			250	µA
			VGE = 0 V, VCE = 1200 V, TJ = 125 °C		-		580			2000
			IF = 75 A		-		3.9			5.0
Diode forward voltage drop		VFM	IF = 100 A		-		4.43			5.8	V
			IF = 75 A, TJ = 125 °C		-		4.37			5.4
			IF = 100 A, TJ = 125 °C		-		5.02			6.4
Gate to emitter leakage current		IGES	VGE = ± 20 V		-		-			± 200	nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER		SYMBOL	TEST CONDITIONS		MIN.			TYP.		MAX.	UNITS
Total gate charge (turn-on)		QG	IC = 500 A		-			630		-
Gate to emitter charge (turn-on)		QGE	VCC = 600 V		-			65		-	nC
Gate to collector charge (turn-on)		QGC	VGE = 15 V		-			250		-
Turn-on switching loss		Eon	IC = 50 A, VCC = 600 V		-			1.51		-
Turn-off switching loss		Eoff	VGE = 15 V, RG = 4.7 Ω, L = 500 µH		-			2.41		-
Total switching loss		Etot	T = 25 °C (1)		-			3.92		-
			J								mJ
Turn-on switching loss		Eon	IC = 50 A, VCC = 600 V		-			2.25		-
Turn-off switching loss		Eoff	VGE = 15 V, RG = 4.7 Ω, L = 500 µH		-			3.35		-
			T = 125 °C (1)
Total switching loss		Etot			-			7.60		-
			J
Turn-on delay time		td(on)			-			169		-
			IC = 50 A, VCC = 600 V
Rise time		tr			-			71		-
			VGE = 15 V, RG = 4.7 Ω, L = 500 µH								ns
Turn-off delay time		td(off)			-			393		-
			TJ = 125 °C
Fall time		tf			-			136		-
Reverse bias safe operating area		RBSOA	TJ = 150 °C, IC = 150 A			Fullsquare
			RG = 10 Ω, VGE = 15 V to 0 V
			TJ = 150 °C
Short circuit safe operating area		SCSOA	VCC = 900 V, VP = 1200 V		10			-		-	µs
			RG = 10 Ω, VGE = 15 V to 0 V
Diode peak reverse recovery current		Irr	TJ = 25 °C		-			1.45		2.5	A
			TJ = 125 °C		-			2.35		4.0
			TJ = 25 °C	VCC = 600 V	-			0.401		0.5
Diode reverse recovery time		trr		IF = 75 A							µs
			TJ = 125 °C		-			0.655		0.8
				dI/dt = 10 A/µs
Total reverse recovery charge		Qrr	TJ = 25 °C		-			0.181		0.4	µC
			TJ = 125 °C		-			0.54		1.5
Note
(1) Energy losses include “tail” and diode reverse recovery
www.vishay.com	For technical questions, contact: [e-mail]							Document Number: 93654
2								Revision: 01-Sep-08

											GB75YF120N
					IGBT Fourpack Module, 75 A Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER						SYMBOL	MIN.		TYP.		MAX.		UNITS
Junction to case IGBT					RthJC (IGBT)		-		-		0.26
Junction to case DIODE					RthJC (DIODE)		-		-		1.00		°C/W
Case to sink, flat, greased surface					RthCS (MODULE)		-		0.05		-
Mounting torque (M5)							2.7		-		3.3		Nm
Weight							-		170		-		g
160									1000
140									100
120
100									10
<![if ! IE]> <![endif]>(A)								<![if ! IE]> <![endif]>(A)
C 80
<![if ! IE]> <![endif]>I								<![if ! IE]> <![endif]>IC	1
60
40									0.1
20
0									0.01
0	20	40	60	80	100	120			1	10	100	1000	10000
			TC (°C)								VCE (V)

Fig. 1 - Maximum DC Collector Current vs.	Fig. 3 - Forward SOA
Case Temperature	TC = 25 °C; TJ ≤ 150 °C

	500									1000
	400
										100
<![if ! IE]> <![endif]>(W)	300									<![if ! IE]> <![endif]>(W)
<![if ! IE]> <![endif]>D										<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>P	200									<![if ! IE]> <![endif]>P
										10
	100
	0									1
	0	20	40	60	80	100	120	140	160	10	100	1000	10000
					TC (°C)							TC (°C)

Fig. 2 - Power Dissipation vs. Case Temperature	Fig. 4 - Reverse Bias SOA
	TJ = 150 °C; VGE = 15 V

Document Number: 93654	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 01-Sep-08		3