Vishay GB75DA120UP Data Sheet
Insulated Gate Bipolar Transistor
SOT-227
PRODUCT SUMMARY
V
CES
DC 75 A at 95 °C
I
C
typical at 75 A, 25 °C 3.3 V
V
CE(on)
(Ultrafast IGBT), 75 A
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
•HEXFRED
•Positive V
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
1200 V
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
GB75DA120UP
Vishay Semiconductors
®
low Qrr, low switching energy
temperature coefficient
CE(on)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Gate to emitter voltage V
Power dissipation, IGBT P
Power dissipation, diode P
Isolation voltage V
CES
C
CM
LM
F
GE
D
D
ISOL
TC = 25 °C 131
= 80 °C 89
T
C
TC = 25 °C 59
= 80 °C 39
T
C
TC = 25 °C 658
= 80 °C 369
T
C
TC = 25 °C 240
= 80 °C 135
T
C
Any terminal to case, t = 1 min 2500 V
1200 V
200
200
± 20 V
A
W
Document Number: 93011 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
GB75DA120UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown
voltage
Collector to emitter voltage V
Gate threshold voltage V
Temperature coefficient of
threshold voltage
Collector to emitter leakage current I
Forward voltage drop V
Gate to emitter leakage current I
V
V
GE(th)
BR(CES)
CE(on)
GE(th)
CES
FM
GES
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
ge
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Reverse bias safe operating area RBSOA
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
gc
on
off
tot
on
off
tot
d(on)
r
d(off)
f
rr
rr
rr
rr
VGE = 0 V, IC = 250 μA 1200 - -
VGE = 15 V, IC = 75 A - 3.3 3.8
= 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9
V
GE
VCE = VGE, IC = 250 μA 4 5 6
/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C
VGE = 0 V, VCE = 1200 V - 3 250 μA
= 0 V, VCE = 1200 V, TJ = 150 °C - 4 20 mA
V
GE
IC = 75 A, VGE = 0 V - 3.4 5.0
I
= 75 A, VGE = 0 V, TJ = 125 °C - 3.3 5.2
C
VGE = ± 20 V - - ± 200 nA
g
IC = 50 A, VCC = 600 V, VGE = 15 V
- 690 -
-65-
- 250 -
IC = 75 A, VCC = 600 V,
V
= 15 V, Rg = 5
GE
L = 500 μH, T
= 25 °C
J
IC = 75 A, VCC = 600 V,
V
= 15 V, Rg = 5
GE
L = 500 μH, T
= 125 °C
J
Energy losses
include tail and
diode recovery
(see fig. 18)
-1.53-
-1.76-
-3.29-
-2.49-
-3.45-
-5.94-
- 281 -
-45-
- 300 -
- 126 -
= 150 °C, IC = 200 A, Rg = 22
T
J
= 15 V to 0 V, VCC = 900 V,
V
GE
= 1200 V, L = 500 μH
V
P
Fullsquare
- 142 210 ns
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
rr
-1316A
- 923 1680 nC
- 202 260 ns
IF = 50 A, dIF/dt = 200 A/μs,
V
= 200 V, TJ = 125 °C
R
rr
-1822A
- 1818 2860 nC
V
V
nCGate to emitter charge (turn-on) Q
mJ
ns
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93011
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10
Allowable Case Temperature (°C)
IC - Continuous Collector Current (A)
0 20 40 60 80 100 120 140
0
160
100
120
140
20
40
60
80
I
C
(A)
VCE (V)
10 100 1000 10 000
1
1000
10
100
GB75DA120UP
Insulated Gate Bipolar Transistor
Vishay Semiconductors
(Ultrafast IGBT), 75 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
Junction to case
IGBT
Case to sink per module R
Mounting torque, 6-32 or M3 screw - - 1.3 Nm
Weight -30-g
, T
T
J
Stg
R
thJC
thCS
- 40 - 150 °C
- - 0.19
°C/WDiode - - 0.52
-0.05-
200
150
TJ = 25 °C
100
(A)
C
I
TJ = 125 °C
50
Fig. 1 - Maximum DC IGBT Collector Current vs.
Document Number: 93011 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
= 150 °C, VGE = 15 V
J
0
0246135
VCE (V)
Fig. 3 - Typical IGBT Collector Current Characteristics
160
140
120
100
80
60
40
20
Allowable Case Temperature (°C)
0
0 10203040506070
IF - Continuous Forward Current (A)
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
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