Vishay GB70LA60UF Data Sheet

"Low Side Chopper" IGBT SOT-227

SOT-227

PRODUCT SUMMARY

V

CES

DC 70 A at 88 °C

I

C

typical at 70 A, 25 °C 2.4 V

V

CE(on)

DC 70 A at 86 °C

I

F

(Warp 2 Speed IGBT), 70 A

FEATURES

• NPT warp 2 speed IGBT technology with
positive temperature coefficient

• Square RBSOA

600 V

•Low V

•FRED Pt® hyperfast rectifier

• Fully isolated package

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

BENEFITS

• Designed for increased operating efficiency in power

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Higher switching frequency up to 150 kHz

• Lower conduction losses and switching losses

• Low EMI, requires less snubbing

CE(on)

conversion: UPS, SMPS, welding, induction heating

GB70LA60UF

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

RMS isolation voltage V

Document Number: 93104 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

CES

TC = 25 °C 111

C

CM

LM

F

FM

GE

D

D

ISOL

= 80 °C 76

T

C

TC = 25 °C 113

= 80 °C 75

T

C

TC = 25 °C 447

= 80 °C 250

T

C

TC = 25 °C 236

= 80 °C 132

T

C

Any terminal to case, t = 1 min 2500 V

, [e-mail], [e-mail] 1

600 V

120

120

200

± 20 V

A

W

GB70LA60UF

Vishay Semiconductors

"Low Side Chopper" IGBT SOT-227

(Warp 2 Speed IGBT), 70 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown
voltage

V

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

V

GE(th)

Collector to emitter leakage current I

Diode reverse breakdown voltage V

Diode forward voltage drop V

Diode reverse leakage current I

Gate to emitter leakage current I

BR(CES)

CE(on)

GE(th)

CES

BR

FM

RM

GES

VGE = 0 V, IC = 1 mA 600 - -

VGE = 15 V, IC = 35 A - 1.69 1.88

= 15 V, IC = 70 A - 2.23 2.44

V

GE

= 15 V, IC = 35 A, TJ = 125 °C - 2.07 2.31

V

GE

V

= 15 V, IC = 70 A, TJ = 125 °C - 2.89 3.21

GE

VCE = VGE, IC = 500 μA 3 3.9 5

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 9 - mV/°C

VGE = 0 V, VCE = 600 V - 1 100 μA

V

= 0 V, VCE = 600 V, TJ = 125 °C - 0.07 2.0 mA

GE

IR = 1 mA 600 - - V

IC = 35 A, VGE = 0 V - 1.8 2.33

= 70 A, VGE = 0 V - 2.13 2.71

I

C

= 35 A, VGE = 0 V, TJ = 125 °C - 1.35 1.81

I

C

I

= 70 A, VGE = 0 V, TJ = 125 °C - 1.7 2.32

C

VR = VR rated - 0.1 50 μA

= 125 °C, VR = VR rated - 0.01 3 mA

T

J

VGE = ± 20 V - - ± 200 nA

V

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

on

off

tot

on

off

tot

d(on)

d(off)

rr

rr

rr

rr

g

IC = 50 A, VCC = 400 V, VGE = 15 V

ge

gc

IC = 70 A, VCC = 360 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 25 °C

J

IC = 70 A, VCC = 360 V,

= 15 V, Rg = 5 

V

GE

r

f

L = 500 μH, T

= 150 °C, IC = 120 A, Rg = 22 

T

J

= 15 V to 0 V, VCC = 400 V,

V

GE

= 600 V

V

P

= 125 °C

J

IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V

rr

IF = 50 A, dIF/dt = 200 A/μs,
V

= 200 V, TJ = 125 °C

rr

R

Energy losses
include tail and
diode recovery
(see fig. 18)

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93104
2 [e-mail]

, [e-mail], [e-mail] Revision: 22-Jul-10

- 320 -

-42-

nCGate to emitter charge (turn-on) Q

- 110 -

-1.15-

-1.16-

-2.31-

-1.27-

mJ

-1.28-

-2.55-

- 208 -

-69-

- 208 -

ns

- 100 -

Fullsquare

-5993ns

-46A

- 118 279 nC

- 130 159 ns

-1113A

- 715 995 nC

Allowable Case Temperature (°C)

IC - Continuous Collector Current (A)

0 20406080 120100

0

160

100

120

140

20

40

60

80

I

C

(A)

VCE (V)

1 10 100 1000

0.01

0.1

1

1000

10

100

I

CES

(mA)

V

CES

(V)

100 200 300 400 500 600

0.0001

1

0.01

0.1

0.001

TJ = 125 °C

TJ = 25 °C

GB70LA60UF

"Low Side Chopper" IGBT SOT-227

Vishay Semiconductors

(Warp 2 Speed IGBT), 70 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature
range

Thermal resistance, junction to case

IGBT

Thermal resistance, case to sink per module R

Mounting torque, 6-32 or M3 screw - - 1.3 Nm

Weight -30-g

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

T

J

R

, T

thJC

thCS

Stg

- 40 - 150 °C

- - 0.28

°C/WDiode - - 0.53

-0.05-

200

175

TJ = 25 °C

TJ = 125 °C

(A)

C

I

150

125

100

75

50

25

0

024135

VCE (V)

Fig. 3 - Typical IGBT Collector Current Characteristics

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Revision: 22-Jul-10 [e-mail]

Fig. 2 - IGBT Reverse Bias SOA

T

= 150 °C, VGE = 15 V

J

Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current

, [e-mail], [e-mail] 3

GB70LA60UF

Allowable Case Temperature (°C)

IF - Continuous Forward Current (A)

020 60 10040 80 120

0

160

100

120

140

20

40

60

80

Energy (mJ)

IC (A)

0 20406080

0.00

1.50

0.50

1.00

0.75

1.25

0.25

E

off

E

on

Switching Time (ns)

IC (A)

010 7030 50 604020 80

10

1000

100

t

d(off)

t

d(on)

t

f

t

r

Vishay Semiconductors

4.5

TJ = 25 °C

4.0

3.5

(V)

geth

V

3.0

2.5

2.0

0.0002 0.0004 0.0006 0.0008 0.001

IC (mA)

Fig. 5 - Typical IGBT Threshold Voltage

4

100 A

3

"Low Side Chopper" IGBT SOT-227

(Warp 2 Speed IGBT), 70 A

200

175

150

125

100

(A)

F

I

TJ = 125 °C

75

50

25

0

TJ = 125 °C

TJ = 25 °C

0 0.5 1.51.0 2.0 2.5 3.0 3.5

VFM (V)

Fig. 8 - Typical Diode Forward Characteristics

(V)

CE

V

2

1

10 50 9030 70 130110 150

Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.

Junction Temperature, V

Fig. 7 - Maximum DC Forward Current vs. Case

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70 A

35 A

TJ (°C)

= 15 V

GE

Temperature

TJ = 125 °C, L = 500 μH, VCC = 360 V,

R

= 5 , VGE = 15 V

g

Fig. 10 - Typical IGBT Switching Time vs. I

TJ = 125 °C, L = 500 μH, VCC = 360 V,

R

= 5 , VGE = 15 V

g

Fig. 9 - Typical IGBT Energy Loss vs. I

C

C

, [e-mail], [e-mail] Revision: 22-Jul-10

t

rr

(ns)

dIF/dt (A/µs)

100 1000

20

170

45

95

120

145

70

TJ = 125 °C

TJ = 25 °C

I

rr

(A)

dIF/dt (A/µs)

100 1000

0

30

10

20

5

15

25

TJ = 125 °C

TJ = 25 °C

GB70LA60UF

"Low Side Chopper" IGBT SOT-227

(Warp 2 Speed IGBT), 70 A

Fig. 11 - Typical trr Diode vs. dIF/dt

V

= 200 V, IF = 50 A

R

1250

1050

850

TJ = 125 °C

Vishay Semiconductors

Fig. 12 - Typical I

V

= 200 V, IF = 50 A

RR

Diode vs. dIF/dt

rr

1

0.1

0.01

- Thermal Impedance

thJC

Junction to Case (°C/W)

Z

0.001

0.00001 0.0001 0.001 0.01 0.1

Document Number: 93104 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

650

(nC)

rr

Q

450

250

50

100 1000

TJ = 25 °C

dIF/dt (A/µs)

Diode vs. dIF/dt

rr

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

DC

Fig. 13 - Typical Q

V

= 200 V, IF = 50 A

R

t1 - Rectangular Pulse Duration (s)

Fig. 14 - Maximum Thermal Impedance Z

, [e-mail], [e-mail] 5

Characteristics (IGBT)

thJC

100101

GB70LA60UF

0.001

0.1

0.01

1

0.00001 0.0001 0.001 0.01 0.1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

100101

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

DC

* Driver same type as D.U.T.; VC = 80 % of V

ce(max)

* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id

50 V

1000 V

D.U.T.

L

V

C

*

2

1

R

g

V

CC

D.U.T.

R =

V

CC

I

CM

+

-

L

Diode clamp/

D.U.T.

D.U.T./

driver

- 5 V

+

-

R

g

V

CC

+

-

Vishay Semiconductors

Fig. 15 - Maximum Thermal Impedance Z

"Low Side Chopper" IGBT SOT-227

(Warp 2 Speed IGBT), 70 A

Characteristics (DIODE)

thJC

Fig. 16a - Clamped Inductive Load Test Circuit Fig. 16b - Pulsed Collector Current Test Circuit

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Fig. 17a - Switching Loss Test Circuit

, [e-mail], [e-mail] Revision: 22-Jul-10

1 - Insulated Gate Bipolar Transistor (IGBT)

2 - B = IGBT Generation 5

3 - Current rating (70 = 70 A)

4 - Circuit configuration (L = Low Side Chopper)

5 - Package indicator (A = SOT-227)

6 - Voltage rating (60 = 600 V)

8 - F = F/W FRED Pt® diode

7 - Speed/type (U = Ultrafast IGBT)

Device code

51324678

G B 70 L A 60 U F

GB70LA60UF

"Low Side Chopper" IGBT SOT-227

1

2

3

V

C

90 %

10 %

5 %

I

C

Fig. 17b - Switching Loss Waveforms Test Circuit

ORDERING INFORMATION TABLE

(Warp 2 Speed IGBT), 70 A

90 %

10 %

t

d(off)

t

t

d(on)

r

E

on

Ets = (Eon + E

)

off

Vishay Semiconductors

t

f

E

off

t = 5 µs

Document Number: 93104 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

, [e-mail], [e-mail] 7

GB70LA60UF

2

1

3

4

Vishay Semiconductors

"Low Side Chopper" IGBT SOT-227

(Warp 2 Speed IGBT), 70 A

CIRCUIT CONFIGURATION

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95036

Packaging information http://www.vishay.com/doc?95037

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93104
8 [e-mail]

, [e-mail], [e-mail] Revision: 22-Jul-10

DIMENSIONS in millimeters (inches)

38.30 (1.508)

37.80 (1.488)

-A-

4

12

3

12.50 (0.492)

7.50 (0.295)

Ø 4.40 (0.173)
Ø 4.20 (0.165)

30.20 (1.189)

29.80 (1.173)

15.00 (0.590)

6.25 (0.246)

25.70 (1.012)

25.20 (0.992)

-B-

R full

Chamfer

2.00 (0.079) x 45°

2.10 (0.082)

1.90 (0.075)

8.10 (0.319)

7.70 (0.303)

4 x

2.10 (0.082)

1.90 (0.075)

-C-

0.12 (0.005)

12.30 (0.484)

11.80 (0.464)

MMM

0.25 (0.010)

CA B

4 x M4 nuts

Outline Dimensions

Vishay Semiconductors

SOT-227

Notes

• Dimensioning and tolerancing per ANSI Y14.5M-1982

• Controlling dimension: millimeter

Document Number: 95036 For technical questions, contact: [e-mail]
Revision: 28-Aug-07 1

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