Vishay GB50YF120N Data Sheet

ECONO2 4PACK

PRODUCT SUMMARY

V

CES

at TC = 66 °C 50 A

I

C

V

(typical) 3.49 V

CE(on)

Vishay High Power Products

IGBT Fourpack Module, 50 A

FEATURES

• Square RBSOA

®

low Qrr, low switching energy

temperature coefficient

CE(on)

1200 V

• HEXFRED

•Positive V

• Copper baseplate

• Low stray inductance design

• Speed 8 to 60 kHz

• Designed and qualified for industrial market

BENEFITS

• Benchmark efficiency for SMPS appreciation in particular
HF welding

• Rugged transient performance

• Low EMI, requires less snubbing

• Direct mounting to heatsink space saving

• PCB solderable terminals

• Low junction to case thermal resistance

GB50YF120N

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current
See fig. C.T.5

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

Maximum power dissipation (IGBT) P

Maximum operating junction temperature T

Storage temperature range T

Isolation voltage V

CES

I

CM

LM

FM

ISOL

Stg

C

F

GE

TC = 25 °C 66

= 80 °C 44

T

C

TC = 25 °C 40

T

= 80 °C 25

C

TC = 25 °C 330

D

T

= 80 °C 180

C

J

1200 V

150

150

150

± 20 V

150

- 40 to + 125

AC 2500 (MIN) V

A

W

°C

Document Number: 93653 For technical questions, contact: [e-mail]
Revision: 01-Sep-08 1

www.vishay.com

GB50YF120N

Vishay High Power Products

IGBT Fourpack Module, 50 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage BV

Gate threshold voltage V

Threshold voltage temperature coefficient ΔV

GE(th)

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

(CES)

CE(ON)

GE(th)

CES

FM

GES

VGE = 0 V, IC = 500 µA 1200 - -

IC = 50 A, VGE = 15 V - 3.49 3.9

I

= 75 A, VGE = 15 V - 4.15 4.5

C

I

= 50 A, VGE = 15 V, TJ = 125 °C - 4.16 4.5

C

= 75 A, VGE = 15 V, TJ = 125 °C - 4.97 5.4

I

C

VCE = VGE, IC = 250 µA 4.0 4.9 6.0

/ΔTJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - mV/°C

VGE = 0 V, VCE = 1200 V - 11 250

V

= 0 V, VCE = 1200 V, TJ = 125 °C - 600 1000

GE

IF = 50 A - 3.30 4.5

= 75 A - 3.90 5.0

I

F

I

= 50 A, TJ = 125 °C - 3.6 4.8

F

I

= 75 A, TJ = 125 °C - 4.37 5.5

F

VGE = ± 20 V - - ± 200 nA

VCollector to emitter voltage V

µA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Short circuit safe operating area SCSOA

Diode peak reverse recovery current I

Diode reverse recovery time t

Total reverse recovery charge Q

Note

(1)

Energy losses include “tail” and diode reverse recovery

GE

GC

on

off

tot

on

off

tot

d(on)

d(off)

rr

rr

G

IC = 50 A

= 600 V

V

CC

= 15 V

V

GE

IC = 50 A, VCC = 600 V

= 15 V, RG = 4.7 Ω, L = 500 µH

V

GE

T

= 25 °C

J

(1)

IC = 50 A, VCC = 600 V

= 15 V, RG = 4.7 Ω, L = 500 µH

V

GE

T

= 125 °C

J

r

f

IC = 50 A, VCC = 600 V
V

GE

= 125 °C

T

J

= 150 °C, IC = 150 A

T

J

R

= 10 Ω, VGE = 15 V to 0 V

G

= 150 °C

T

J

V

CC

R

= 10 Ω, VGE = 15 V to 0 V

G

(1)

= 15 V, RG = 4.7 Ω, L = 500 µH

= 900 V, VP = 1200 V

TJ = 25 °C

T

= 125 °C - 2.0 3

J

TJ = 25 °C - 0.453 0.49

T

= 125 °C - 0.74 0.82

J

= 600 V

V

CC

I

= 50 A

F

dI/dt = 7 A/µs

TJ = 25 °C - 0.12 0.3

rr

T

= 125 °C - 0.4 1.5

J

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 01-Sep-08

- 400 -

-43-

nCGate to emitter charge (turn-on) Q

- 187 -

-0.93-

-1.20-

-2.13-

-1.68-

mJ

-1.77-

-3.46-

- 128 -

-56-

- 292 -

ns

- 134 -

Fullsquare

10 - - µs

-1.32.3

µs

µC

Document Number: 93653

A

GB50YF120N

IGBT Fourpack Module, 50 A

Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Junction to case IGBT R

Case to sink, flat, greased surface R

Mounting torque (M5) 2.7 - 3.3 Nm

Weight - 170 - g

160

140

120

100

(A)

80

C

I

60

40

20

0

0 10203040506070

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

(IGBT) - - 0.38

thJC

(DIODE) - - 1.00

thJC

(MODULE) - 0.05 -

thCS

1000

100

10

IC (A)

1

0.1

0.01
1 10 100 1000 10000

Fig. 3 - Forward SOA

T

= 25 °C; TJ ≤ 150 °C

C

°C/WJunction to case DIODE R

VCE (V)

350

300

250

200

(W)

D

P

150

100

50

0

0 20406080100120140160

TC (°C)

Fig. 2 - Power Dissipation vs. Case Temperature

1000

100

(W)

D

P

10

1

10 100 1000 10000

TC (°C)

Fig. 4 - Reverse Bias SOA

= 150 °C; VGE = 15 V

T

J

Document Number: 93653 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Sep-08 3

GB50YF120N

160

Vishay High Power Products

160

VGE = 18V
VGE = 15V

140

VGE = 12V
VGE = 9V

120

100

(A)

80

CE

I

60

40

20

0

01234567

VCE (V)

Fig. 5 - Typical IGBT Output Characteristics

140

120

100

(A)

80

CE

I

60

40

20

0

012345678

Fig. 6 - Typical IGBT Output Characteristics

T

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V

T

= 25 °C; tp = 500 µs

J

VCE (V)

= 125 °C; tp = 500 µs

J

IGBT Fourpack Module, 50 A

20

18

16

14

12

(V)

10

CE

V

8

6

4

2

0

20

18

16

14

12

(V)

10

CE

V

8

6

4

2

0

ICE = 75A

ICE= 50A

ICE= 25A

7 9 11 13 15 17 19

VGE (V)

Fig. 8 - Typical V

T

J

7 9 11 13 15 17 19

VGE (V)

Fig. 9 - Typical V

T

= 125 °C

J

= 25 °C

CE

CE

vs. V

vs. V

GE

ICE = 75A

ICE= 50A

ICE= 25A

GE

160

(A)

F

I

140

120

100

80

60

40

20

0

25°C
125°C

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

VF (V)

Fig. 7 - Typical Diode Forward Characteristics

= 500 µs

t

p

300

250

200

(A)

150

CE

I

100

50

0

468101214

TJ = 25°C

TJ= 125°C

VGE (V)

Fig. 10 - Typical Transfer Characteristics

= 20 V; tp = 500 µs

V

CE

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 93653

4 Revision: 01-Sep-08

GB50YF120N

IGBT Fourpack Module, 50 A

1

TJ= 125°C

0.1

(mA)

CES

I

0.01

TJ = 25°C

0.001
400 600 800 1000 1200

V

(V)

CES

Fig. 11 - Typical Zero Gate Voltage Collector Current

5.5

TJ = 25°C

5

4.5

4

(V)

geth

3.5

V

3

2.5

TJ= 125°C

Vishay High Power Products

1

t

F

0.1

Switching Time (µs)

0.01

0 20 40 60 80 100

TJ = 125 °C; L = 200 µH; V

(A)

I

Fig. 14 - Typical Switching Time vs. I

12

10

8

6

RR

4

2

td

OFF

td

ON

t

R

IC (A)

= 600 V, RG = 5 Ω; VGE = 15 V

CE

125°C

25°C

C

2

0 0.2 0.4 0.6 0.8 1

IC (mA)

Fig. 12 - Typical Threshold Voltage

4.5

4

E

3.5

3

2.5

Energy (mJ)

2

1.5

1

0.5
020406080100

ON

IC (A)

Fig. 13 - Typical Energy Loss vs. I

T

= 125 °C; L = 200 µH; VCE = 600 V, RG= 5 Ω; V

J

E

OFF

C

= 15 V

GE

0

0 20 40 60 80 100

dIF/ dt (A/µs)

Fig. 15 - Typical Diode I

V

= 600 V; IF = 50 A

CC

800

700

600

500

(ns)

400

RR

t

300

200

100

0

0 20 40 60 80 100

125°C

25°C

dIF/ dt (A/µs)

Fig. 16 - Typical Diode t

V

= 600 V; IF = 50 A

CC

vs. dIF/dt

REC

vs. dIF/dt

rr

Document Number: 93653 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Sep-08 5

GB50YF120N

Vishay High Power Products

1600

1400

1200

1000

(nC)

800

RR

Q

600

400

200

0

0 20 40 60 80 100

Fig. 17 - Typical Diode Qrr vs. dIF/dt

V

0.1

)

thJC

0.01

0.001

125°C

dIF/ dt (A/µs)

= 600 V; IF = 50 A

CC

1

D = 0.50

0.02

25°C

0.20

0.05

0.01

IGBT Fourpack Module, 50 A

(V)

GE

V

0.10

16

14

12

10

8

6

4

2

0

0 100 200 300 400 500

typical value

QG, Total Gate Charge (nC)

Fig. 18 - Typical Gate Charge vs. V

I

= 5.0 A; L = 600 µH

CE

GE

0.0001

Thermal Response (Z

1E-005

1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE
( THERMAL RESPONSE )

t1, Rectangular Pulse Duration (sec)

Fig. 19 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)

10

D = 0.50

)

1

thJC

0.1

0.01

Thermal Response (Z

0.001
1E-006 1E-005 0.0001 0.001

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE
( THERMAL RESPONSE )

t1, Rectangular Pulse Duration (sec)

Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (DIODE)

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 93653

6 Revision: 01-Sep-08

GB50YF120N

0

1K

D.U.T.

Fig. C.T.1 - Gate Charge Circuit (Turn-Off)

L

80 V

+

-

R

g

D.U.T.

IGBT Fourpack Module, 50 A

L

1000 V

V

CC

+

-

Vishay High Power Products

Driver

D

+

900 V

-

+

-

V

CC

Fig. C.T.3 - S.C. SOA Circuit

Diode clamp/

D.U.T.

+

-

- 5 V

R

g

C

D.U.T.

L

D.U.T./

Driver

Fig. C.T.2 - RBSOA Circuit

V

CC

R =

I

CM

D.U.T.

R

g

Fig. C.T.4 - Switching Loss Circuit

+

-

V

CC

Fig. C.T.5 - Resistive Load Circuit

Document Number: 93653 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Sep-08 7

GB50YF120N

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

CIRCUIT CONFIGURATION

G B 50 Y F 120 N

1 - Insulated gate bipolar transistor (IGBT)

2 - B = IGBT Generation 5 NPT

3 - Current rating (50 = 50 A)

4 - Circuit configuration (Y = Fourpack)

5 - Package indicator (F = ECONO2)

6 - Voltage rating (120 = 1200 V)

7 - Speed/type (N = Ultrafast with reduced diode, speed 8 to 60 kHz)

48, 49

IGBT Fourpack Module, 50 A

67

51324

21, 22

40

41

5, 6, 7

36

37

46, 47

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95252

28

29

15, 16, 17

32

33

23, 24

www.vishay.com For technical questions, contact: [e-mail]
8 Revision: 01-Sep-08

Document Number: 93653

DIMENSIONS in millimeters (inches)

Z

Y

20.5

+ 1.0

- 0.5

105 ± 0.1

13.2 ± 0.15

0.8

1.25

- 0.02

- 0.06

0.8 ± 0.03

X 2:1

34.29

30.48

22.86

19.05

30.48

22.86

19.05

34.29

30.48

22.86

19.05

26.67

39.49

93 ± 0.15

107.8 ± 0.2

22.86

19.05

26.67

34.29

39.49

15.24

21 ± 0.03

21 ± 0.03

5.5 ± 0.05

10.5

45.4 ± 0.2

42 ± 0.15

7.5

0

- 0 3

11.43

Detail

R 3

10.5

83

0

- 0.2

Z 2:1

0.6

0.5

0.8 ± 0.03

Y 2:1

0.85

1

1.25

- 0.02

- 0.06

2

49

4

5

6

7

810

12

15

16

17

19

48

47

46

44

43

41

40

38

37

36

35

33

32

30

2928

27

26

24

23

22
21

11.43

7.62

7.62

11.43

11.43

7.62

7.62

3.81

7.62

7.62

11.43

ECONO2 4PAK

Outline Dimensions

Vishay Semiconductors

Document Number: 95252 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 29-Nov-07 1

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1