Vishay GB50NA120UX Data Sheet
"High Side Chopper" IGBT SOT-227
SOT-227
PRODUCT SUMMARY
V
CES
DC 50 A at 92 °C
I
C
typical at 50 A, 25 °C 3.22 V
V
CE(on)
(Ultrafast IGBT), 50 A
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
•HEXFRED
•Positive V
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
1200 V
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
Vishay Semiconductors
®
clamping diode
temperature coefficient
CE(on)
GB50NA120UX
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Gate to emitter voltage V
Power dissipation, IGBT P
Power dissipation, diode P
RMS isolation voltage V
CES
C
CM
LM
F
GE
D
D
ISOL
TC = 25 °C 84
= 80 °C 57
T
C
TC = 25 °C 76
= 80 °C 52
T
C
TC = 25 °C 431
= 80 °C 242
T
C
TC = 25 °C 278
= 80 °C 156
T
C
Any terminal to case, t = 1 min 2500 V
1200 V
150
150
± 20 V
A
W
Document Number: 93101 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown
voltage
Collector to emitter voltage V
Gate threshold voltage V
Temperature coefficient of
threshold voltage
Collector to emitter leakage current I
Diode reverse breakdown voltage V
Diode forward voltage drop V
Diode reverse leakage current I
Gate to emitter leakage current I
V
BR(CES)
VGE = 0 V, IC = 1 mA 1200 - -
VGE = 15 V, IC = 25 A - 2.46 -
= 15 V, IC = 50 A - 3.22 2.80
V
CE(on)
GE(th)
V
/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - mV/°C
GE(th)
GE
V
= 15 V, IC = 25 A, TJ = 125 °C - 2.84 3.60
GE
= 15 V, IC = 50 A, TJ = 125 °C - 3.78 3.0
V
GE
VCE = VGE, IC = 500 μA 4 5 4
VGE = 0 V, VCE = 1200 V - 6 50 μA
CES
BR
= 0 V, VCE = 1200 V, TJ = 125 °C - 0.7 2.0 mA
V
GE
IR = 1 mA 1200 - - V
IC = 25 A, VGE = 0 V - 1.99 2.42
I
= 50 A, VGE = 0 V - 2.53 3.00
FM
C
= 25 A, VGE = 0 V, TJ = 125 °C - 1.96 2.30
I
C
I
= 50 A, VGE = 0 V, TJ = 125 °C - 2.66 3.08
C
VR = VR rated - 4 50 μA
RM
GES
T
= 125 °C, VR = VR rated - 0.6 3 mA
J
VGE = ± 20 V - - ± 200 nA
V
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Reverse bias safe operating area RBSOA
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
ge
gc
on
off
tot
on
off
tot
d(on)
d(off)
rr
rr
rr
rr
g
IC = 50 A, VCC = 600 V, VGE = 15 V
IC = 50 A, VCC = 600 V,
V
= 15 V, Rg = 5
GE
L = 500 μH, T
= 25 °C
J
IC = 50 A, VCC = 600 V,
= 15 V, Rg = 5
V
GE
r
f
L = 500 μH, T
= 150 °C, IC = 150 A, Rg = 22
T
J
V
= 15 V to 0 V, VCC = 900 V,
GE
= 1200 V
V
P
= 125 °C
J
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
rr
IF = 50 A, dIF/dt = 200 A/μs,
V
= 200 V, TJ = 125 °C
rr
R
Energy losses
include tail and
diode recovery
(see fig. 18)
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93101
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10
- 400 -
-43-
nCGate to emitter charge (turn-on) Q
- 187 -
-2.72-
-1.11-
-3.83-
-3.94-
mJ
-2.31-
-6.25-
- 191 -
-53-
- 223 -
ns
- 143 -
Fullsquare
- 129 161 ns
-1114A
- 700 1046 nC
- 208 257 ns
-1721A
- 1768 2698 nC
Allowable Case Temperature (°C)
IC - Continuous Collector Current (A)
0 102030405060708090
0
160
100
120
140
20
40
60
80
I
C
(A)
VCE (V)
1 10 100 1000 10 000
0.01
0.1
1
1000
10
100
GB50NA120UX
"High Side Chopper" IGBT SOT-227
Vishay Semiconductors
(Ultrafast IGBT), 50 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
Thermal resistance, junction to case
IGBT
Thermal resistance, case to sink per module R
Mounting torque, 6-32 or M3 screw - - 1.3 Nm
Weight -30-g
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
, T
T
J
Stg
R
thJC
thCS
- 40 - 150 °C
- - 0.29
°C/WDiode - - 0.45
-0.05-
200
175
150
TJ = 25 °C
TJ = 125 °C
(A)
C
I
125
100
75
50
25
0
024 813 657
VCE (V)
Fig. 3 - Typical IGBT Collector Current Characteristics
Document Number: 93101 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com
Fig. 2 - IGBT Reverse Bias SOA
T
= 150 °C, VGE = 15 V
J
10
1
0.1
TJ = 125 °C
(mA)
CES
0.01
I
0.001
0.0001
100 300 500 700 900 1100
TJ = 25 °C
V
(V)
CES
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
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