Vishay GB50LA120UX Data Sheet

"Low Side Chopper" IGBT SOT-227

SOT-227

PRODUCT SUMMARY

V

CES

DC 50 A at 92 °C

I

C

typical at 50 A, 25 °C 3.22 V

V

CE(on)

(Ultrafast IGBT), 50 A

FEATURES

• NPT Generation V IGBT technology

• Square RBSOA

•HEXFRED

•Positive V

• Fully isolated package

• Speed 8 kHz to 60 kHz

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

1200 V

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting on heatsink

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

Vishay Semiconductors

®

clamping diode

temperature coefficient

CE(on)

GB50LA120UX

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

RMS isolation voltage V

CES

C

CM

LM

F

GE

D

D

ISOL

TC = 25 °C 84

= 80 °C 57

T

C

TC = 25 °C 76

= 80 °C 52

T

C

TC = 25 °C 431

= 80 °C 242

T

C

TC = 25 °C 278

= 80 °C 156

T

C

Any terminal to case, t = 1 min 2500 V

1200 V

150

150

± 20 V

A

W

Document Number: 93102 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

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GB50LA120UX

Vishay Semiconductors

"Low Side Chopper" IGBT SOT-227

(Ultrafast IGBT), 50 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown
voltage

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

Collector to emitter leakage current I

Diode reverse breakdown voltage V

Diode forward voltage drop V

Diode reverse leakage current I

Gate to emitter leakage current I

V

BR(CES)VGE

= 0 V, IC = 1 mA 1200 - -

VGE = 15 V, IC = 25 A - 2.46 -

= 15 V, IC = 50 A - 3.22 2.80

V

CE(on)

GE(th)

V

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - mV/°C

GE(th)

GE

V

= 15 V, IC = 25 A, TJ = 125 °C - 2.84 3.60

GE

= 15 V, IC = 50 A, TJ = 125 °C - 3.78 3.00

V

GE

VCE = VGE, IC = 500 μA 4 5 4

VGE = 0 V, VCE = 1200 V - 6 50 μA

CES

BR

= 0 V, VCE = 1200 V, TJ = 125 °C - 0.7 2.0 mA

V

GE

IR = 1 mA 1200 - - V

IC = 25 A, VGE = 0 V - 1.99 2.42

I

= 50 A, VGE = 0 V - 2.53 3.00

FM

C

= 25 A, VGE = 0 V, TJ = 125 °C - 1.96 2.30

I

C

I

= 50 A, VGE = 0 V, TJ = 125 °C - 2.66 3.08

C

VR = VR rated - 4 50 μA

RM

GES

T

= 125 °C, VR = VR rated - 0.6 3.0 mA

J

VGE = ± 20 V - - ± 200 nA

V

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

ge

gc

on

off

tot

on

off

tot

d(on)

d(off)

rr

rr

rr

rr

g

IC = 50 A, VCC = 600 V, VGE = 15 V

IC = 50 A, VCC = 600 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 25 °C

J

IC = 50 A, VCC = 600 V,

= 15 V, Rg = 5 

V

GE

r

f

L = 500 μH, T

= 150 °C, IC = 150 A, Rg = 22 

T

J

V

= 15 V to 0 V, VCC = 900 V,

GE

= 1200 V

V

P

= 125 °C

J

IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V

rr

IF = 50 A, dIF/dt = 200 A/μs,
V

= 200 V, TJ = 125 °C

rr

R

Energy losses
include tail and
diode recovery
(see fig. 18)

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, [e-mail], [e-mail] Revision: 22-Jul-10

- 400 -

-43-

nCGate to emitter charge (turn-on) Q

- 187 -

-2.72-

-1.11-

-3.83-

-3.94-

mJ

-2.31-

-6.25-

- 191 -

-53-

- 223 -

ns

- 143 -

Fullsquare

- 129 161 ns

-1114A

- 700 1046 nC

- 208 257 ns

-1721A

- 1768 2698 nC

Allowable Case Temperature (°C)

IC - Continuous Collector Current (A)

0 102030405060708090

0

160

100

120

140

20

40

60

80

I

C

(A)

VCE (V)

1 10 100 1000 10 000

0.01

0.1

1

1000

10

100

GB50LA120UX

"Low Side Chopper" IGBT SOT-227

Vishay Semiconductors

(Ultrafast IGBT), 50 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and
storage temperature range

Thermal resistance, junction to case

IGBT

Thermal resistance, case to sink per module R

Mounting torque, 6-32 or M3 screw - - 1.3 Nm

Weight -30-g

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

, T

T

J

Stg

R

thJC

thCS

- 40 - 150 °C

- - 0.29

°C/WDiode - - 0.45

-0.05-

200

175

150

TJ = 25 °C

TJ = 125 °C

(A)

C

I

125

100

75

50

25

0

024 813 657

VCE (V)

Fig. 3 - Typical IGBT Collector Current Characteristics

Document Number: 93102 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

Fig. 2 - IGBT Reverse Bias SOA

T

= 150 °C, VGE = 15 V

J

10

1

0.1

TJ = 125 °C

(mA)

CES

0.01

I

0.001

0.0001
100 300 500 700 900 1100

TJ = 25 °C

V

(V)

CES

Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current

, [e-mail], [e-mail] 3

GB50LA120UX

V

CE

(V)

TJ (°C)

10 50 9030 70 130110 150

2

6

4

5

3

100 A

50 A

25 A

I

F

(A)

VFM (V)

01 32 456

0

200

25

75

100

150

125

175

50

TJ = 125 °C

TJ = 25 °C

Energy (mJ)

IC (A)

10 20 30 40 50

0

4

2

3

1

E

off

E

on

Switching Time (ns)

IC (A)

010 5030 4020 60

10

1000

100

t

d(off)

t

d(on)

t

f

t

r

Vishay Semiconductors

5.5

TJ = 25 °C

5.0

4.5

(V)

geth

V

4.0

3.5

3.0

0.0002 0.0004 0.0006 0.0008 0.001

IC (mA)

Fig. 5 - Typical IGBT Threshold Voltage

"Low Side Chopper" IGBT SOT-227

(Ultrafast IGBT), 50 A

TJ = 125 °C

Fig. 8 - Typical Diode Forward Characteristics

Allowable Case Temperature (°C)

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Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.

Junction Temperature, V

160

140

120

100

80

60

40

20

0

010 30 5020 40 60 70 80

IF - Continuous Forward Current (A)

Fig. 7 - Maximum DC Forward Current vs.

Case Temperature

GE

= 15 V

Fig. 9 - Typical IGBT Energy Loss vs. I

TJ = 125 °C, L = 500 μH, VCC = 600 V,

R

= 5 , VGE = 15 V

g

Fig. 10 - Typical IGBT Switching Time vs. I

TJ = 125 °C, L = 500 μH, VCC = 600 V,

R

= 5 , VGE = 15 V

g

C

C

, [e-mail], [e-mail] Revision: 22-Jul-10

Energy (mJ)

Rg (Ω)

0 1020304050

0

12

6

10

8

4

2

E

on

E

off

Switching Time (ns)

Rg (Ω)

0203010 40 50

10

100

1000

t

d(on)

t

d(off)

t

f

t

r

t

rr

(ns)

dIF/dt (A/µs)

100 1000

70

250

110

150

190

210

230

90

130

170

TJ = 125 °C

TJ = 25 °C

I

rr

(A)

dIF/dt (A/µs)

100 1000

0

40

10

20

30

35

5

15

25

TJ = 125 °C

TJ = 25 °C

GB50LA120UX

"Low Side Chopper" IGBT SOT-227

(Ultrafast IGBT), 50 A

Fig. 11 - Typical IGBT Energy Loss vs. R

TJ = 125 °C, IC = 50 A, L = 500 μH,

V

= 600 V, VGE = 15 V

CC

Vishay Semiconductors

g

Fig. 13 - Typical t

V

= 200 V, IF = 50 A

R

Diode vs. dIF/dt

rr

Fig. 12 - Typical IGBT Switching Time vs. R

TJ = 125 °C, L = 500 μH, VCC = 600 V,

Document Number: 93102 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

I

= 50 A, VGE = 15 V

C

g

2650

2400

2150

1900

1650

(nC)

rr

1400

Q

1150

900

650

400

100 1000

TJ = 125 °C

dIF/dt (A/µs)

Fig. 15 - Typical Q

Diode vs. dIF/dt, VR = 200 V, IF = 50 A

rr

, [e-mail], [e-mail] 5

TJ = 25 °C

Fig. 14 - Typical I

V

= 200 V, IF = 50 A

R

Diode vs. dIF/dt

rr

GB50LA120UX

0.001

0.1

0.01

1

0.00001 0.0001 0.001 0.01 0.1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

101

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

DC

0.001

0.1

0.01

1

0.00001 0.0001 0.001 0.01 0.1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

101

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

DC

Vishay Semiconductors

"Low Side Chopper" IGBT SOT-227

(Ultrafast IGBT), 50 A

Fig. 16 - Maximum Thermal Impedance Z

Characteristics (IGBT)

thJC

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Fig. 17 - Maximum Thermal Impedance Z

, [e-mail], [e-mail] Revision: 22-Jul-10

Characteristics (Diode)

thJC

* Driver same type as D.U.T.; VC = 80 % of V

ce(max)

* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id

50 V

1000 V

D.U.T.

L

V

C

*

2

1

R

g

V

CC

D.U.T.

R =

V

CC

I

CM

+

-

GB50LA120UX

"Low Side Chopper" IGBT SOT-227

Vishay Semiconductors

(Ultrafast IGBT), 50 A

Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit

Diode clamp/

D.U.T.

-

- 5 V

+

R

g

L

D.U.T./

driver

+

-

V

CC

Document Number: 93102 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

1

2

3

V

C

I

C

Fig. 19a - Switching Loss Test Circuit

10 %

90 %

10 %

5 %

t

t

d(on)

r

E

on

Ets = (Eon + E

Fig. 19b - Switching Loss Waveforms Test Circuit

, [e-mail], [e-mail] 7

90 %

t

d(off)

t

f

t = 5 µs

E

off

)

off

GB50LA120UX

1 - Insulated Gate Bipolar Transistor (IGBT)

2 - B = IGBT Generation 5

3 - Current rating (50 = 50 A)

4 - Circuit configuration (L = Low side chopper)

5 - Package indicator (A = SOT-227)

6 - Voltage rating (120 = 1200 V)

8 - X = F/W HEXFRED® diode

7 - Speed/type (U = Ultrafast IGBT)

Device code

51324678

G B 50 L A 120 U X

Vishay Semiconductors

"Low Side Chopper" IGBT SOT-227

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

(Ultrafast IGBT), 50 A

1

4

3

2

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95036

Packaging information www.vishay.com/doc?95037

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93102
8 [e-mail]

, [e-mail], [e-mail] Revision: 22-Jul-10

DIMENSIONS in millimeters (inches)

38.30 (1.508)

37.80 (1.488)

-A-

4

12

3

12.50 (0.492)

7.50 (0.295)

Ø 4.40 (0.173)
Ø 4.20 (0.165)

30.20 (1.189)

29.80 (1.173)

15.00 (0.590)

6.25 (0.246)

25.70 (1.012)

25.20 (0.992)

-B-

R full

Chamfer

2.00 (0.079) x 45°

2.10 (0.082)

1.90 (0.075)

8.10 (0.319)

7.70 (0.303)

4 x

2.10 (0.082)

1.90 (0.075)

-C-

0.12 (0.005)

12.30 (0.484)

11.80 (0.464)

MMM

0.25 (0.010)

CA B

4 x M4 nuts

Outline Dimensions

Vishay Semiconductors

SOT-227

Notes

• Dimensioning and tolerancing per ANSI Y14.5M-1982

• Controlling dimension: millimeter

Document Number: 95036 For technical questions, contact: [e-mail]
Revision: 28-Aug-07 1

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