Vishay GB200TS60NPBF Data Sheet

INT-A-PAK

PRODUCT SUMMARY

V

CES

DC 209 A

I

C

at 200 A, 25 °C 2.6 V

V

CE(on)

Vishay High Power Products

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT), 209 A

FEATURES

• Generation 5 Non Punch Through (NPT)
technology

• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz

600 V

•Low V

• 10 μs short circuit capability

• Square RBSOA

•Positive V

•HEXFRED

• Industry standard package

•Al

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed for industrial level

BENEFITS

• Benchmark efficiency for UPS and welding application

• Rugged transient performance

• Direct mounting on heatsink

• Very low junction to case thermal resistance

CE(on)

temperature coefficient

CE(on)

®

antiparallel diode with ultrasoft reverse

recovery characteristics

DBC

2O3

GB200TS60NPbF

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Maximum power dissipation P

Isolation voltage V

Document Number: 94503 For technical questions, contact: [e-mail]
Revision: 04-May-10 1

CES

C

CM

LM

F

GE

D

ISOL

TC = 25 °C 209

= 80 °C 142

T

C

TC = 25 °C 178

= 80 °C 121

T

C

TC = 25 °C 781

T

= 80 °C 438

C

Any terminal to case, t = 1 minute 2500 V

600 V

400

400

± 20 V

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A

W

GB200TS60NPbF

Vishay High Power Products

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT), 209 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V

Collector to emitter leakage current I

Diode forward voltage drop V

Gate to emitter leakage current I

BR(CES)VGE

CE(on)

GE(th)

CES

FM

GES

= 0 V, IC = 500 μA 600 - -

VGE = 15 V, IC = 100 A - 1.95 2.1

= 15 V, IC = 200 A - 2.6 2.84

V

GE

= 15 V, IC = 100 A, TJ = 125 °C - 2.28 2.5

V

GE

= 15 V, IC = 200 A, TJ = 125 °C - 3.14 3.48

V

GE

VCE = VGE, IC = 500 μA 3 4.2 6

VGE = 0 V, VCE = 600 V - 0.005 0.2

V

= 0 V, VCE = 600 V, TJ = 150 °C - 0.01 15

GE

IC = 100 A - 1.39 1.78

= 200 A - 1.64 2.2

I

C

= 100 A, TJ = 125 °C - 1.32 1.69

I

C

= 200 A, TJ = 125 °C - 1.67 2.30

I

C

VGE = ± 20 V - - ± 200 nA

VCollector to emitter voltage V

mA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

on

off

tot

on

off

tot

d(on)

r

d(off)

f

Reverse bias safe operating area RBSOA

Short circuit safe operating area SCSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

rr

rr

rr

rr

rr

rr

IC = 200 A, VCC = 360 V, VGE = 15 V,
R

= 10 Ω, L = 200 μH, TJ = 25 °C

g

IC = 200 A, VCC = 360 V, VGE = 15 V,
R

= 10 Ω, L = 200 μH, TJ = 125 °C

g

= 150 °C, IC = 400 A,

T

J

= 27 Ω, VGE = 15 V to 0

R

g

= 150 °C, VCC = 400 V, VP = 600 V,

T

J

R

= 27 Ω, VGE = 15 V to 0

g

IF = 50 A, dIF/dt = 200 A/μs,
V

= 400 V, TJ = 25 °C

CC

IF = 50 A, dIF/dt = 200 A/μs,
V

= 400 V, TJ = 125 °C

CC

-3.65-

-6.9-

- 10.55 -

-3.8-

mJ

-7.8-

- 11.6 -

-507-

-133-

-538-

ns

-92-

Fullsquare

10 - -

- 226 260 ns

-1720A

- 1900 2600 nC

- 290 330 ns

-2530A

- 3600 5000 nC

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Document Number: 94503

2 Revision: 04-May-10

GB200TS60NPbF

INT-A-PAK "Half-Bridge"

Vishay High Power Products

(Ultrafast Speed IGBT), 209 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Operating junction and storage temperature range T

Junction to case per leg

IGBT

Case to sink per module R

Mounting torque

case to heatsink - - 4

case to terminal 1, 2, 3 - - 3

, T

J

Stg

R

thJC

thCS

Weight - 185 - g

300

Vge = 18V

Vge = 15V

250

Vge = 12V

200

- 40 - 150 °C

- 0.13 0.16

°C/WDiode - 0.19 0.32

-0.1-

Nm

300

250

200

150

(A)

cE

I

100

50

0

01234

Vge = 9V

VCE(V)

Fig. 1 - Typical IGBT Output Characteristics

T

= 25 °C, tp = 500 μs

J

300

Vge = 18V
Vge = 15V

250

Vge = 12V

200

150

(A)

cE

I

100

50

0

012345

Vge = 9V

VCE(V)

Fig. 2 - Typical IGBT Output Characteristics

T

= 125 °C, tp = 500 μs

J

150

(A)

cE

I

100

50

Tj = 125°C

Tj = 25°C

0

0123456789

VGE(V)

Fig. 3 - Typical Transfer Characteristics

V

= 20 V, tp = 500 μs

CE

3.5

3

2.5

2

1.5

, Collector -to-Emitter Voltage (V)

CE

V

1

04080120160

TJ, Junction Temperature (°C)

Ic = 200A

Ic = 100A

Ic = 50A

Fig. 4 - Typical Collector to Emitter Voltage vs.

Junction Temperature

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GB200TS60NPbF

Vishay High Power Products

200

150

100

(A)

F

I

50

0

160

140

120

100

80

60

, Case Temperature (°C)

40

C

T

20

0

Tj = 125°C

Tj = 25°C

0.00.51.01.52.0

VF(V)

Fig. 5 - Diode Forward Characteristics,

t

= 500 μs

p

DC

0 50 100 150 200 250

Maximum DC Collector Current (A)

Fig. 6 - Maximum Collector Current vs.

Case Temperature

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT), 209 A

1000

Switching Time (ns)

13000

12000

11000

10000

Energy (mJ)

td(off)

td(on)

tf

100

tr

10

40 60 80 100 120 140 160 180 200 220

Fig. 8 - Typical Switching Time vs. I

TJ = 125 °C, L = 200 μH, VCC = 360 V,

9000

8000

7000

6000

5000

4000

3000

5 101520253035404550

Fig. 9 - Typical Energy Loss vs. R

TJ = 125 °C, L = 200 μH, VCC = 360 V,

IC (A)

R

= 10 Ω, VGE = 15 V

g

Eoff

Eon

RG ( Ω)

I

= 200 A, VGE = 15 V

CE

C

g

8000

7000

6000

5000

4000

3000

Energy (mJ)

2000

1000

0

50 100 150 200

Eoff

IC (A)

Fig. 7 - Typical Energy Loss vs. I

TJ = 125 °C, L = 200 μH, VCC = 360 V,

R

= 10 Ω, VGE = 15 V

g

Eon

C

10000

1000

td(off)

td(on)

tr

100

Energy Time (ns)

tf

10

01020304050

RG ( Ω)

Fig. 10 - Typical Switching Time vs. R

TJ = 125 °C, L = 200 μH, VCC = 360 V,

I

= 200 A, VGE = 15 V

CE

g

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Document Number: 94503

4 Revision: 04-May-10

GB200TS60NPbF

100

90

80

70

60

(A)

RR

I

50

40

30

20

40 80 120 160 200

10 ohm

IF(A)

Fig. 11 - Typical Diode Irr vs. I

TJ = 125 °C

100

90

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT), 209 A

27 ohm

47 ohm

F

Vishay High Power Products

26
25
24

23
22

21
20
19
18

17
16
15

14

Total Switching Losses (mJ)

13

12
11

5 101520253035404550

RG ( Ω)

Fig. 14 - Typical Switching Losses vs. Gate Resistance

T

= 125 °C, L = 200 μH, Rg = 10 Ω,

J

V

= 360 V, VGE = 15 V

CC

100

80

70

(A)

RR

I

60

50

40

30

0 1020304050

RG ( Ω)

Fig. 12 - Typical Diode I

TJ = 125 °C, IF = 200 A

100

90

80

(A)

RR

I

70

60

50

600 700 800 900 1000 1100 1200 1300

vs. R

rr

dIF/ dt (A/μs)

Fig. 13 - Typical Diode I

T

= 125 °C, VCC = 360 V, IF = 200 A, VGE = 15 V

J

vs. dIF/dt

rr

10

Total Switching Losses (mJ)

1

0255075100125

TJ - Junction Temperature (°C)

g

Fig. 15 - Typical Switching Losses vs.

Junction Temperature;

L = 200 μH, R

12

11

10

9

8

7

6

5

4

Total Switching Losses (mJ)

3

2

40 60 80 100 120 140 160 180 200 220

g

Fig. 16 - Typical Switching Losses vs.

Collector to Emitter Current;

T

= 125 °C,Rg1 = 10 Ω, Rg2 = 0 Ω, VCC = 360 V, VGE = 15 V

J

Ic = 200A

Ic = 100A

Ic = 50A

= 10 Ω, VCC = 360 V, VGE = 15 V

IC(A)

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Revision: 04-May-10 5

GB200TS60NPbF

Vishay High Power Products

1

)

thJC

Thermal response (Z

0.001

)

thJC

Thermal response (Z

0.001

D = 0.5

0.1

D = 0.2

D = 0.1

D = 0.05

0.01
D = 0.02

D = 0.01

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)

1

D = 0.5

0.1
D = 0.2

D = 0.1

D = 0.05

D = 0.02

0.01
D = 0.01

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00

Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT), 209 A

Notes:

Single Pulse

(Thermal Response)

t1, Rectangular Pulse Duration (sec)

Single Pulse

(Thermal Response)

t1, Rectangular Pulse Duration (sec)

1. Duty Factor D = t1/t2

2. Peak Tj = Pdm x ZthJC + Tc

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = Pdm x ZthJC + Tc

®

)

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Document Number: 94503

6 Revision: 04-May-10

GB200TS60NPbF

(Ultrafast Speed IGBT), 209 A

ORDERING INFORMATION TABLE

Device code

CIRCUIT CONFIGURATION

G B 200 T S 60 N PbF

1 - Insulated Gate Bipolar Transistor (IGBT)

2 - B = IGBT Generation 5 NPT

3 - Current rating (200 = 200 A)

4 - Circuit configuration (T = Half-bridge)

5 - Package indicator (S = INT-A-PAK)

6 - Voltage rating (60 = 600 V)

7 - Speed/type (N = Ultrafast IGBT)

8 - Lead (Pb)-free

INT-A-PAK "Half-Bridge"

51324678

3

Vishay High Power Products

6

7

1

4

5

2

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95173

Document Number: 94503 For technical questions, contact: [e-mail]
Revision: 04-May-10 7

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INT-A-PAK IGBT/Thyristor

80 (3.15)

Ø 6.5 (0.25 DIA)

30 (1.18)

9 (0.33)

7 (0.28)

28 (1.10)

29 (1.15)

37 (1.44)

5 (0.20)

2.8 x 0.8
(0.11 x 0.03)

7

6

5

4

123

23 (0.91)23 (0.91)17 (0.67)

35 (1.38)

14.5 (0.57)

3 screws M6 x 10

66 (2.60)

94 (3.70)

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

Document Number: 95067 For technical questions, contact: [e-mail]
Revision: 15-Feb-08 1

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