Vishay GB100TS60NPBF Data Sheet
INT-A-PAK
PRODUCT SUMMARY
V
CES
DC 108 A
I
C
at 100 A, 25 °C 2.6 V
V
CE(on)
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 108 A
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
600 V
•Low V
• 10 μs short circuit capability
• Square RBSOA
•Positive V
•HEXFRED
• Industry standard package
•Al
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
CE(on)
temperature coefficient
CE(on)
®
antiparallel diode with ultrasoft reverse
recovery characteristics
DBC
2O3
GB100TS60NPbF
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Gate to emitter voltage V
Maximum power dissipation P
Isolation voltage V
Document Number: 94501 For technical questions, contact: indmodules@vishay.com
Revision: 04-May-10 1
CES
C
CM
LM
F
GE
D
ISOL
TC = 25 °C 108
= 80 °C 74
T
C
TC = 25 °C 106
= 80 °C 69
T
C
TC = 25 °C 390
T
= 80 °C 219
C
Any terminal to case, t = 1 min 2500 V
600 V
200
200
± 20 V
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A
W
GB100TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 108 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate threshold voltage V
Collector to emitter leakage current I
Diode forward voltage drop V
Gate to emitter leakage current I
BR(CES)VGE
CE(on)
GE(th)
CES
FM
GES
= 0 V, IC = 500 μA 600 - -
VGE = 15 V, IC = 50 A - 1.95 2.1
= 15 V, IC = 100 A - 2.6 2.85
V
GE
= 15 V, IC = 50 A, TJ = 125 °C - 2.21 2.44
V
GE
= 15 V, IC = 100 A, TJ = 125 °C - 3.05 3.38
V
GE
VCE = VGE, IC = 500 μA 3 4.6 6
VGE = 0 V, VCE = 600 V - 0.01 0.1
V
= 0 V, VCE = 600 V, TJ = 150 °C - 3.7 10
GE
IC = 50 A - 1.35 1.66
= 100 A - 1.57 1.96
I
C
= 50 A, TJ = 125 °C - 1.27 1.50
I
C
= 100 A, TJ = 125 °C - 1.57 1.89
I
C
VGE = ± 20 V - - ± 200 nA
VCollector to emitter voltage V
mA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
on
off
tot
on
off
tot
d(on)
r
d(off)
f
Reverse bias safe operating area RBSOA
Short circuit safe operating area SCSOA
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
rr
rr
rr
rr
rr
rr
IC = 100 A, VCC = 360 V, VGE = 15 V,
= 4.7 Ω, L = 200 μH, TJ = 25 °C
R
g
IC = 100 A, VCC = 360 V, VGE = 15 V,
R
= 4.7 Ω, L = 200 μH, TJ = 125 °C
g
T
= 150 °C, IC = 200 A,
J
R
= 27 Ω, VGE = 15 V to 0
g
= 150 °C, VCC = 400 V, VP = 600 V,
T
J
R
= 27 Ω, VGE = 15 V to 0
g
IF = 50 A, dIF/dt = 200 A/μs,
= 400 V, TJ = 25 °C
V
CC
IF = 50 A, dIF/dt = 200 A/μs,
V
= 400 V, TJ = 125 °C
CC
-0.6-
-1.1-
-1.7-
-0.8-
mJ
-1.3-
-2.1-
- 197 -
-50-
- 225 -
ns
-72-
Fullsquare
10 - -
- 116 140 ns
-1115A
- 600 1050 nC
- 152 190 ns
-1620A
- 1215 1900 nC
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94501
2 Revision: 04-May-10
GB100TS60NPbF
INT-A-PAK "Half-Bridge"
Vishay High Power Products
(Ultrafast Speed IGBT), 108 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction and storage temperature range T
Junction to case per leg
IGBT
Case to sink per module R
Mounting torque
case to heatsink - - 4
case to terminal 1, 2, 3 - - 3
, T
J
Stg
R
thJC
thCS
Weight - 185 - g
200
Vge = 18V
Vge = 15V
Vge = 12V
150
100
(A)
cE
I
50
0
0123456
Vge = 9V
VCE(V)
Fig. 1 - Typical IGBT Output Characteristics
T
= 25 °C, tp = 500 μs
J
- 40 - 150 °C
- 0.23 0.32
°C/WDiode - 0.38 0.64
-0.1-
Nm
200
180
160
140
120
100
(A)
cE
I
80
60
40
20
0
0246810
Tj = 125°C
Tj = 25°C
VGE(V)
Fig. 3 - Typical Transfer Characteristics
V
= 20 V, tp = 500 μs
CE
200
Vge = 18V
Vge = 15V
Vge = 12V
150
(A)
100
cE
I
50
0
0123456
Vge = 9V
VCE(V)
Fig. 2 - Typical IGBT Output Characteristics
T
= 125 °C, tp = 500 μs
J
5
4.5
4
3.5
3
2.5
, Collector -to-Emitter Voltage (V)
2
CE
V
1.5
0 20406080100120140160
TJ, Junction Temperature (°C)
Ic = 200A
Ic = 100A
Ic = 50A
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature,
V
= 15 V, 500 μs pulse width
GE
Document Number: 94501 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 04-May-10 3
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