Vishay GB100DA60UP Data Sheet

Insulated Gate Bipolar Transistor

(Warp 2 Speed IGBT), 100 A

FEATURES

• NPT warp 2 speed IGBT technology with
positive temperature coefficient

• Square RBSOA

®

antiparallel diodes with ultrasoft

SOT-227

•HEXFRED
reverse recovery

• Fully isolated package

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

GB100DA60UP

Vishay Semiconductors

PRODUCT SUMMARY

V

CES

DC 100 A at 61 °C

I

C

typical at 100 A, 25 °C 2.4 V

V

CE(on)

DC 100 A at 85 °C

I

F

600 V

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Higher switching frequency up to 150 kHz

• Lower conduction losses and switching losses

• Low EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

CES

C

CM

LM

F

FM

GE

D

D

ISOL

TC = 25 °C 125

T

= 80 °C 85

C

TC = 25 °C 160

= 80 °C 105

T

C

TC = 25 °C 447

= 80 °C 250

T

C

TC = 25 °C 313

= 80 °C 175

T

C

Any terminal to case, t = 1 min 2500 V

600 V

300

300

200

± 20 V

A

W

Document Number: 93001 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

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GB100DA60UP

Vishay Semiconductors

Insulated Gate Bipolar Transistor

(Warp 2 Speed IGBT), 100 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown
voltage

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

Collector to emitter leakage current I

Forward voltage drop V

Gate to emitter leakage current I

V

V

BR(CES)

CE(on)

GE(th)

GE(th)

CES

GES

FM

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

g

ge

gc

on

off

tot

on

off

tot

d(on)

r

d(off)

f

rr

rr

rr

rr

rr

rr

VGE = 0 V, IC = 250 μA 600 - -

VGE = 15 V, IC = 100 A - 2.4 2.8

= 15 V, IC = 100 A, TJ = 125 °C - 3 3.4

V

GE

VCE = VGE, IC = 250 μA 3 3.9 5

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - mV/°C

VGE = 0 V, VCE = 600 V - 7 100 μA

= 0 V, VCE = 600 V, TJ = 150 °C - 4 10 mA

V

GE

IC = 100 A, VGE = 0 V - 1.6 2.1

I

= 100 A, VGE = 0 V, TJ = 125 °C - 1.7 2

C

VGE = ± 20 V - - ± 200 nA

- 460 690

IC = 100 A, VCC = 480 V, VGE = 15 V

- 160 250

- 70 130

IC = 100 A, VCC = 360 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 25 °C

J

IC = 100 A, VCC = 360 V,

= 15 V, Rg = 5 

V

GE

L = 500 μH, T

= 125 °C

J

Energy losses
include tail and
diode recovery
(see fig. 18)

-0.36-

-1.42-

-1.78-

-0.52-

-1.6-

-2.12-

- 264 -

-54-

- 257 -

-80-

= 150 °C, IC = 300 A, Rg = 22 

T

J

= 15 V to 0 V, VCC = 400 V,

V

GE

= 600 V, L = 500 μH

V

P

Fullsquare

- 95 120 ns

IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V

-1013A

- 480 780 nC

- 144 185 ns
IF = 50 A, dIF/dt = 200 A/μs,
V

= 200 V, TJ = 125 °C

R

-1619A

- 1136 1758 nC

V

V

nCGate to emitter charge (turn-on) Q

mJ

ns

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Continuous collector current, IC (A)

Allowable case temperature (°C)

0 20406080100120140

0

20

40

60

80

100

120

140

160

VCE (V)

I

C

(A)

1 10 100 1000

0

1

10

100

1000

012345

0

50

100

150

200

Tj = 25°C

Tj = 125°C

VCE (V)

IC (A)

GB100DA60UP

Insulated Gate Bipolar Transistor

Vishay Semiconductors

(Warp 2 Speed IGBT), 100 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature
range

Junction to case

IGBT

Case to sink per module R

Mounting torque, 6-32 or M3 screw - - 1.3 Nm

Weight -30-g

T

J

R

, T

thJC

thCS

Stg

- 40 - 150 °C

- - 0.28

°C/WDiode - - 0.4

-0.05-

Fig. 1 - Maximum DC IGBT Collector Current vs.

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Revision: 22-Jul-10 [e-mail]

Fig. 2 - IGBT Reverse Bias SOA

Case Temperature

T

= 150 °C, VGE = 15 V

J

Fig. 3 - Typical IGBT Collector Current Characteristics

160

140

120

100

80

60

40

20

Allowable case temperature (°C)

0

0 20 40 60 80 100 120 140 160 180

Continuous forward current, IF (A)

Fig. 4 - Maximum DC Forward Current vs.

Case Temperature

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GB100DA60UP

0 0.5 1 1.5 2 2.5

0

50

100

150

200

Tj = 25 °C

Tj = 12 5°C

VFM (V)

I

F

(A)

100 200 300 400 500 600

0.0001

0.001

0.01

0.1

1

10

TJ= 125°C

TJ = 25°C

V

CES

(V)

I

CES

(mA)

20 40 60 80 100 120 140 160

0

0.5

1

1.5

2

2.5

3

3.5

4

27 A

75 A

100 A

TJ (°C)

V

CE

(V)

10 30 50 70 90 110

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

E

ON

E

OFF

IC (A)

Energy (mJ)

0 20 40 60 80 100 120

10

100

1000

t

R

td

OFF

t

F

td

ON

IC (A)

Switching time (μs)

Vishay Semiconductors

Fig. 5 - Typical Diode Forward Characteristics

Insulated Gate Bipolar Transistor

(Warp 2 Speed IGBT), 100 A

Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.

Junction Temperature, V

= 15 V

GE

Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current

4.5

4

3.5

(V)

geth

V

3

2.5

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2

0.0002 0.0004 0.0006 0.0008 0.001

Fig. 7 - Typical IGBT Threshold Voltage

TJ = 25°C

TJ= 125°C

IC (mA)

Fig. 9 - Typical IGBT Energy Loss vs. I

TJ = 125 °C, L = 500 μH, VCC = 360 V,

R

= 5 , VGE = 15 V

g

Fig. 10 - Typical IGBT Switching Time vs. I

TJ = 125 °C, L = 500 μH, VCC = 360 V,

R

= 5 , VGE = 15 V

g

C

C

, [e-mail], [e-mail] Revision: 22-Jul-10

01020304050

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

3.2

3.4

E

ON

E

OFF

RG ( Ω)

Energy (mJ)

0 10 20 30 40 50

10

100

1000

t

R

td

OFF

t

F

td

ON

RG ( Ω)

Switching time (μs)

100 1000

50

70

90

110

130

150

170

190

210

TJ= 125°C

TJ = 25°C

dIF/dt (A/μs)

t

rr

(ns)

Z

thJC

- Thermal impedance junction to case (°C/W )

Rectangular pulse duration (t1)

1E-005 0.0001 0.001 0.01 0.1 1

0.0001

0.001

0.01

0.1

1

0.20

0.10

D = 0.50

0.01

0.02

0.05

SINGLE PULSE
( THERMAL RESPONSE )

GB100DA60UP

Insulated Gate Bipolar Transistor

(Warp 2 Speed IGBT), 100 A

Fig. 11 - Typical IGBT Energy Loss vs. R

TJ = 125 °C, IC = 100 A, L = 500 μH,

V

= 360 V, VGE = 15 V

CC

Vishay Semiconductors

g

(A)
I

Fig. 13 - Typical t

V

= 200 V, IF = 50 A

RR

40

35

30

25

20

rr

15

10

5

0

100 1000

TJ= 125°C

diode vs. dIF/dt

rr

TJ = 25°C

Fig. 12 - Typical IGBT Switching Time vs. R

TJ = 125 °C, L = 500 μH, VCC = 360 V,

I

= 100 A, VGE = 15 V

C

Fig. 15 - Maximum Thermal Impedance Z

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Revision: 22-Jul-10 [e-mail]

dIF/dt (A/μs)

g

thJC

Fig. 14 - Typical I

V

= 200 V, IF = 50 A

RR

Characteristics (IGBT)

diode vs. dIF/dt

rr

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GB100DA60UP

Rectangular pulse duration (t1)

1E-005 0.0001 0.001 0.01 0.1 1

0.001

0.01

0.1

1

0.20

0.10

D = 0.50

0.01

0.02

0.05

SINGLE PULSE
( THERMAL RESPONSE )

Z

thJC

- Thermal impedance junction to case (°C/W )

* Driver same type as D.U.T.; VC = 80 % of V

ce(max)

* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id

50 V

1000 V

D.U.T.

L

V

C

*

2

1

R

g

V

CC

D.U.T.

R =

V

CC

I

CM

+

-

L

Diode clamp/

D.U.T.

D.U.T./

driver

- 5 V

+

-

R

g

V

CC

+

-

Vishay Semiconductors

Insulated Gate Bipolar Transistor

(Warp 2 Speed IGBT), 100 A

Fig. 16 - Maximum Thermal Impedance Z

Characteristics (diode)

thJC

Fig. 17a - Clamped Inductive Load Test Circuit Fig. 17b - Pulsed Collector Current Test Circuit

Fig. 18a - Switching Loss Test Circuit

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1 - Insulated Gate Bipolar Transistor (IGBT)

2 - B = IGBT Generation 5

3 - Current rating (100 = 100 A)

4 - Circuit configuration (D = Single switch with antiparallel diode)

5 - Package indicator (A = SOT-227)

6 - Voltage rating (60 = 600 V)

8 - Totally lead (Pb)-free

7 - Speed/type (U = Ultrafast IGBT)

Device code

51324678

G B 100 D A 60 U P

GB100DA60UP

Insulated Gate Bipolar Transistor

(Warp 2 Speed IGBT), 100 A

1

2

3

V

C

90 %

10 %

5 %

I

C

t

d(on)

Fig. 18b - Switching Loss Waveforms Test Circuit

10 %

t

r

E

on

Ets = (Eon + E

90 %

t

d(off)

Vishay Semiconductors

t

f

E

off

)

off

t = 5 µs

ORDERING INFORMATION TABLE

Document Number: 93001 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

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GB100DA60UP

Vishay Semiconductors

Insulated Gate Bipolar Transistor

(Warp 2 Speed IGBT), 100 A

CIRCUIT CONFIGURATION

3 (C)

2 (G)

1, 4 (E)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95036

Packaging information www.vishay.com/doc?95037

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DIMENSIONS in millimeters (inches)

38.30 (1.508)

37.80 (1.488)

-A-

4

12

3

12.50 (0.492)

7.50 (0.295)

Ø 4.40 (0.173)
Ø 4.20 (0.165)

30.20 (1.189)

29.80 (1.173)

15.00 (0.590)

6.25 (0.246)

25.70 (1.012)

25.20 (0.992)

-B-

R full

Chamfer

2.00 (0.079) x 45°

2.10 (0.082)

1.90 (0.075)

8.10 (0.319)

7.70 (0.303)

4 x

2.10 (0.082)

1.90 (0.075)

-C-

0.12 (0.005)

12.30 (0.484)

11.80 (0.464)

MMM

0.25 (0.010)

CA B

4 x M4 nuts

Outline Dimensions

Vishay Semiconductors

SOT-227

Notes

• Dimensioning and tolerancing per ANSI Y14.5M-1982

• Controlling dimension: millimeter

Document Number: 95036 For technical questions, contact: [e-mail]
Revision: 28-Aug-07 1

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