Vishay GB100DA60UP Data Sheet
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
®
antiparallel diodes with ultrasoft
SOT-227
•HEXFRED
reverse recovery
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
GB100DA60UP
Vishay Semiconductors
PRODUCT SUMMARY
V
CES
DC 100 A at 61 °C
I
C
typical at 100 A, 25 °C 2.4 V
V
CE(on)
DC 100 A at 85 °C
I
F
600 V
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Peak diode forward current I
Gate to emitter voltage V
Power dissipation, IGBT P
Power dissipation, diode P
Isolation voltage V
CES
C
CM
LM
F
FM
GE
D
D
ISOL
TC = 25 °C 125
T
= 80 °C 85
C
TC = 25 °C 160
= 80 °C 105
T
C
TC = 25 °C 447
= 80 °C 250
T
C
TC = 25 °C 313
= 80 °C 175
T
C
Any terminal to case, t = 1 min 2500 V
600 V
300
300
200
± 20 V
A
W
Document Number: 93001 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown
voltage
Collector to emitter voltage V
Gate threshold voltage V
Temperature coefficient of
threshold voltage
Collector to emitter leakage current I
Forward voltage drop V
Gate to emitter leakage current I
V
V
BR(CES)
CE(on)
GE(th)
GE(th)
CES
GES
FM
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Reverse bias safe operating area RBSOA
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
g
ge
gc
on
off
tot
on
off
tot
d(on)
r
d(off)
f
rr
rr
rr
rr
rr
rr
VGE = 0 V, IC = 250 μA 600 - -
VGE = 15 V, IC = 100 A - 2.4 2.8
= 15 V, IC = 100 A, TJ = 125 °C - 3 3.4
V
GE
VCE = VGE, IC = 250 μA 3 3.9 5
/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - mV/°C
VGE = 0 V, VCE = 600 V - 7 100 μA
= 0 V, VCE = 600 V, TJ = 150 °C - 4 10 mA
V
GE
IC = 100 A, VGE = 0 V - 1.6 2.1
I
= 100 A, VGE = 0 V, TJ = 125 °C - 1.7 2
C
VGE = ± 20 V - - ± 200 nA
- 460 690
IC = 100 A, VCC = 480 V, VGE = 15 V
- 160 250
- 70 130
IC = 100 A, VCC = 360 V,
V
= 15 V, Rg = 5
GE
L = 500 μH, T
= 25 °C
J
IC = 100 A, VCC = 360 V,
= 15 V, Rg = 5
V
GE
L = 500 μH, T
= 125 °C
J
Energy losses
include tail and
diode recovery
(see fig. 18)
-0.36-
-1.42-
-1.78-
-0.52-
-1.6-
-2.12-
- 264 -
-54-
- 257 -
-80-
= 150 °C, IC = 300 A, Rg = 22
T
J
= 15 V to 0 V, VCC = 400 V,
V
GE
= 600 V, L = 500 μH
V
P
Fullsquare
- 95 120 ns
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
-1013A
- 480 780 nC
- 144 185 ns
IF = 50 A, dIF/dt = 200 A/μs,
V
= 200 V, TJ = 125 °C
R
-1619A
- 1136 1758 nC
V
V
nCGate to emitter charge (turn-on) Q
mJ
ns
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93001
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10
Continuous collector current, IC (A)
Allowable case temperature (°C)
0 20406080100120140
0
20
40
60
80
100
120
140
160
VCE (V)
I
C
(A)
1 10 100 1000
0
1
10
100
1000
012345
0
50
100
150
200
Tj = 25°C
Tj = 125°C
VCE (V)
IC (A)
GB100DA60UP
Insulated Gate Bipolar Transistor
Vishay Semiconductors
(Warp 2 Speed IGBT), 100 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature
range
Junction to case
IGBT
Case to sink per module R
Mounting torque, 6-32 or M3 screw - - 1.3 Nm
Weight -30-g
T
J
R
, T
thJC
thCS
Stg
- 40 - 150 °C
- - 0.28
°C/WDiode - - 0.4
-0.05-
Fig. 1 - Maximum DC IGBT Collector Current vs.
Document Number: 93001 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com
Fig. 2 - IGBT Reverse Bias SOA
Case Temperature
T
= 150 °C, VGE = 15 V
J
Fig. 3 - Typical IGBT Collector Current Characteristics
160
140
120
100
80
60
40
20
Allowable case temperature (°C)
0
0 20 40 60 80 100 120 140 160 180
Continuous forward current, IF (A)
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
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