Vishay GA75TS120UPBF Data Sheet
INT-A-PAK
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode
• Very low conduction and switching losses
•HEXFRED
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
®
antiparallel diodes with ultrasoft recovery
GA75TS120UPbF
PRODUCT SUMMARY
V
CES
DC 110 A
I
C
at 75 A, 25 °C 2.5 V
V
CE(on)
1200 V
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, welding
• Lower EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Peak switching current
See fig. 17
Peak diode forward current I
Gate to emitter voltage V
RMS isolation voltage V
Maximum power dissipation P
Operating junction temperature range T
Storage temperature range T
CES
C
CM
I
LM
FM
GE
ISOL
Stg
TC = 25 °C 110
= 76 °C 75
T
C
Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature
Any terminal to case, t = 1 minute 2500
D
J
TC = 25 °C 390
T
= 85 °C 200
C
1200 V
150
150
150
± 20
- 40 to + 150
- 40 to + 125
A
V
W
°C
Document Number: 94427 For technical questions, contact: indmodules@vishay.com
Revision: 03-May-10 1
www.vishay.com
GA75TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate threshold voltage V
Temperature coefficient of threshold voltage ΔV
Forward transconductance g
Collector to emitter leaking current I
Diode forward voltage V
Gate to emitter leakage current I
(BR)CES
CE(on)
GE(th)
GE(th)
fe
CES
F
GES
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching energy E
Total switching energy E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching energy E
Total switching energy E
Input capacitance C
Reverse transfer capacitance C
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode peak rate of fall of recovery during t
b
Note
(1)
Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature
dI
d(on)
d(off)
off
ts
d(on)
d(off)
off
ts
oes
(rec)M
g
ge
gc
r
f
on
r
f
on
ies
res
rr
rr
rr
VGE = 0 V, IC = 1 mA 1200 - VGE = 15 V, IC = 75 A - 2.5 3.7
= 75 A, VGE = 15 V, TJ = 125 °C - 2.25 3.3
I
C
VCE = 6.0 V, IC = 750 μA
/ΔT
J
VCE = 25 V, IC = 75 A
Pulse width 50 μs, single shot
3.0 4.5 6.0
-- 14-mV/°C
- 107 - S
VGE = 0 V, VCE = 1200 V - 0.03 1.0
V
= 0 V, VCE = 1200 V, TJ = 125 °C - 4.3 10
GE
VGE = 0 V, IF = 75 A - 3 3.6
I
= 75 A, VGE = 0 V, TJ = 125 °C - 2.83 3.3
F
VGE = ± 20 V - - 250 nA
VCC = 400 V
= 85 A
I
C
Rg1 = 15 Ω
R
= 0 Ω
g2
= 75 A
I
C
V
= 720 V
CC
= ± 15 V
V
(1)
(1)
GE
Inductor load
= 25 °C
T
J
Rg1 = 15 Ω
R
= 0 Ω
g2
I
= 75 A
C
= 720 V
V
CC
= ± 15 V
V
(1)
(1)
GE
Inductor load
= 125 °C
T
J
VGE = 0 V
= 30 V
V
CC
f = 1 MHz
Rg1 = 15 Ω
R
= 0 Ω
g2
= 75 A
I
C
V
= 720 V
CC
/dt - 1491 - A/μs
dI/dt = 1300 A/μs
- 570 854
- 96 144
- 189 283
- 437 -
-60-
- 395 -
- 245 -
-5-
-3-
-8-
- 453 -
-70-
- 415 -
- 661 -
-8-
-11-
-1932
- 12 815 -
- 570 -
- 110 -
- 174 - ns
- 107 - A
- 9367 - nC
VCollector to emitter voltage V
mA
V
nCGate to emitter charge (turn-on) Q
ns
mJTurn-off switching energy E
ns
mJTurn-off switching energy E
pFOutput capacitance C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Thermal resistance, junction to case
Thermal resistance, case to sink per module R
Mounting torque
case to terminal 1, 2 and 3 For screws M5 x 0.8 - 3.0
case to heatsink - 4.0
IGBT
R
thJC
thCS
Weight of module 200 - g
www.vishay.com For technical questions, contact: indmodules@vishay.com
2 Revision: 03-May-10
-0.32
°C/WDiode - 0.35
0.1 -
Nm
Document Number: 94427
GA75TS120UPbF
80
70
60
50
Square wave:
40
30
Load Current (A)
20
10
0
0.1 1 10 100
1000
VGE = 15 V
500 µs pulse width
100
125 °C
10
- Collector Current (A)
C
I
1
0.5 1.0 1.5 2.0 2.5 3.0
60 % of rated
I
Ideal diodes
VCE - Collector to Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
voltage
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
f - Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
25 °C
3.5
of Fundamental)
RMS
Vishay High Power Products
For both:
Duty cycle: 50 %
= 125 °C
T
J
= 90 °C
T
sink
Gate drive as specified
Power dissipation = 83 W
160
140
120
100
80
60
40
- Case Temperature (°C)
C
T
20
0
0 20 40 80 100 120
Maximum DC Collector Current (A)
Fig. 4 - Case Temperature vs.
Maximum Collector Current
DC
60
1000
VGE = 20 V
500 µs pulse width
100
125 °C
10
- Collector to Emitter Current (A)
C
I
1
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGE - Gate to Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
25 °C
8.0
3.0
IC = 150 A
2.5
IC = 75 A
2.0
- Collector to Emitter Voltage (V)
CE
V
VGE = 15 V
500 µs pulse width
1.5
0 30 60 90 120 150
IC = 37 A
TJ - Junction Temperature (°C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Document Number: 94427 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 03-May-10 3
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