Vishay GA75TS120UPBF Data Sheet

INT-A-PAK

Vishay High Power Products

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 75 A

FEATURES

• Generation 4 IGBT technology

• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode

• Very low conduction and switching losses

•HEXFRED

• Industry standard package

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

®

antiparallel diodes with ultrasoft recovery

GA75TS120UPbF

PRODUCT SUMMARY

V

CES

DC 110 A

I

C

at 75 A, 25 °C 2.5 V

V

CE(on)

1200 V

BENEFITS

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS,
SMPS, welding

• Lower EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current
See fig. 17

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation P

Operating junction temperature range T

Storage temperature range T

CES

C

CM

I

LM

FM

GE

ISOL

Stg

TC = 25 °C 110

= 76 °C 75

T

C

Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature

Any terminal to case, t = 1 minute 2500

D

J

TC = 25 °C 390

T

= 85 °C 200

C

1200 V

150

150

150

± 20

- 40 to + 150

- 40 to + 125

A

V

W

°C

Document Number: 94427 For technical questions, contact: [e-mail]
Revision: 03-May-10 1

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GA75TS120UPbF

Vishay High Power Products

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 75 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V
Temperature coefficient of threshold voltage ΔV

Forward transconductance g

Collector to emitter leaking current I

Diode forward voltage V

Gate to emitter leakage current I

(BR)CES

CE(on)

GE(th)

GE(th)

fe

CES

F

GES

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching energy E

Total switching energy E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching energy E

Total switching energy E
Input capacitance C

Reverse transfer capacitance C
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q

Diode peak rate of fall of recovery during t

b

Note

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature

dI

d(on)

d(off)

off

ts

d(on)

d(off)

off

ts

oes

(rec)M

g

ge

gc

r

f

on

r

f

on

ies

res

rr

rr

rr

VGE = 0 V, IC = 1 mA 1200 - ­VGE = 15 V, IC = 75 A - 2.5 3.7

= 75 A, VGE = 15 V, TJ = 125 °C - 2.25 3.3

I

C

VCE = 6.0 V, IC = 750 μA

/ΔT

J

VCE = 25 V, IC = 75 A
Pulse width 50 μs, single shot

3.0 4.5 6.0

-- 14-mV/°C

- 107 - S

VGE = 0 V, VCE = 1200 V - 0.03 1.0
V

= 0 V, VCE = 1200 V, TJ = 125 °C - 4.3 10

GE

VGE = 0 V, IF = 75 A - 3 3.6
I

= 75 A, VGE = 0 V, TJ = 125 °C - 2.83 3.3

F

VGE = ± 20 V - - 250 nA

VCC = 400 V

= 85 A

I

C

Rg1 = 15 Ω
R

= 0 Ω

g2

= 75 A

I

C

V

= 720 V

CC

= ± 15 V

V

(1)

(1)

GE

Inductor load

= 25 °C

T

J

Rg1 = 15 Ω
R

= 0 Ω

g2

I

= 75 A

C

= 720 V

V

CC

= ± 15 V

V

(1)

(1)

GE

Inductor load

= 125 °C

T

J

VGE = 0 V

= 30 V

V

CC

f = 1 MHz

Rg1 = 15 Ω
R

= 0 Ω

g2

= 75 A

I

C

V

= 720 V

CC

/dt - 1491 - A/μs

dI/dt = 1300 A/μs

- 570 854

- 96 144

- 189 283

- 437 -

-60-

- 395 -

- 245 -

-5-

-3-

-8-

- 453 -

-70-

- 415 -

- 661 -

-8-

-11-

-1932

- 12 815 -

- 570 -

- 110 -

- 174 - ns

- 107 - A

- 9367 - nC

VCollector to emitter voltage V

mA

V

nCGate to emitter charge (turn-on) Q

ns

mJTurn-off switching energy E

ns

mJTurn-off switching energy E

pFOutput capacitance C

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS

Thermal resistance, junction to case

Thermal resistance, case to sink per module R

Mounting torque

case to terminal 1, 2 and 3 For screws M5 x 0.8 - 3.0

case to heatsink - 4.0

IGBT

R

thJC

thCS

Weight of module 200 - g

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-0.32
°C/WDiode - 0.35

0.1 -

Nm

Document Number: 94427

GA75TS120UPbF

80

70

60

50

Square wave:

40

30

Load Current (A)

20

10

0

0.1 1 10 100

1000

VGE = 15 V
500 µs pulse width

100

125 °C

10

- Collector Current (A)

C

I

1

0.5 1.0 1.5 2.0 2.5 3.0

60 % of rated

I

Ideal diodes

VCE - Collector to Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

voltage

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 75 A

f - Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

25 °C

3.5

of Fundamental)

RMS

Vishay High Power Products

For both:
Duty cycle: 50 %

= 125 °C

T

J

= 90 °C

T

sink

Gate drive as specified
Power dissipation = 83 W

160

140

120

100

80

60

40

- Case Temperature (°C)

C

T

20

0

0 20 40 80 100 120

Maximum DC Collector Current (A)

Fig. 4 - Case Temperature vs.

Maximum Collector Current

DC

60

1000

VGE = 20 V
500 µs pulse width

100

125 °C

10

- Collector to Emitter Current (A)

C

I

1

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

VGE - Gate to Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

25 °C

8.0

3.0

IC = 150 A

2.5

IC = 75 A

2.0

- Collector to Emitter Voltage (V)

CE

V

VGE = 15 V
500 µs pulse width

1.5
0 30 60 90 120 150

IC = 37 A

TJ - Junction Temperature (°C)

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

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Revision: 03-May-10 3

GA75TS120UPbF

Vishay High Power Products

1

0.1

Thermal Response

thJC -

Z

0.01

25 000

20 000

0.0001

Single pulse

(thermal response)

0.001 0.01 0.1 1

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

VGE = 0 V, f = 1 MHz

= Cge + Cgc, Cce shorted

C

ies

= C

C

res

gc

C

= Cce + C

oes

gc

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 75 A

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

t1 - Rectangular Pulse Duration (s)

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

10 100

26

24

P

DM

t

1

t

2

1/t2

+ T

thJC

C

1000

15 000

10 000

C - Capacitance (pF)

5000

0

1 10 100

VCE - Collector to Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector to Emitter Voltage

20

VCC = 400 V

= 85 A

I

C

15

10

5

- Gate to Emitter Voltage (V)

GE

V

0

0 200 400

QG - Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate to Emitter Voltage

600

22

20

Total Switching Losses (mJ)

18

10 20 30 40 50

RG - Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate Resistance

100

IC = 150 A

10

IC = 75 A

IC = 25 A

Total Switching Losses (mJ)

1
0 30 60 90 120 150

TJ - Junction Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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Document Number: 94427

4 Revision: 03-May-10

GA75TS120UPbF

70

R

= 15 Ω

G1

= 0 Ω

R

60

G2

= 125 °C

T

C

= 720 V

V

CC

50

40

30

20

10

Total Switching Losses (mJ)

= 15 V

V

GE

0

0 20 40 80 120 160

60 100 140

IC - Collector Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector to Emitter Current

200

VGE = 20 V

= 125 °C

T

J

measured at terminal (peak voltage)

V

CE

150

100

100

50

- Collector Current (A)

C

I

Safe operating area

0

0 400 800 1400

200 600 1000 1200

VCE - Collector to Emitter Voltage (V)

Fig. 12 - Reverse Bias SOA

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 75 A

16 000

12 000

8000

(nC)

rr

Q

4000

0

500 1000 1500

250

200

(ns)

rr

t

150

100

500 1000 1500

Fig. 15 - Typical Reverse Recovery Time vs. dI

Vishay High Power Products

VR = 720 V

= 125 °C

T

J

= 25 °C

T

J

IF = 150 A

= 75 A

I

F

I

= 37 A

F

2000

dIF/dt (A/µs)

Fig. 14 - Typical Stored Charge vs. dIF/dt

VR = 720 V

= 125 °C

T

J

= 25 °C

T

J

IF = 150 A

= 75 A

I

F

= 37 A

I

F

2000

dIF/dt (A/µs)

/dt

F

1000

100

TJ = 125 °C

TJ = 25 °C

10

- Instantaneous

F

I

Forward Current (A)

1

0.5 1.0 1.5 2.0 2.5 3.0 3.5

VF - Forward Voltage Drop (V)

Fig. 13 - Typical Forward Voltage Drop vs.

Instantaneous Forward Current

200

160

120

IF = 150 A

= 75 A

I

F

= 37 A

I

F

(A)

80

RRM

I

40

0

500 1000 1500

Fig. 16 - Typical Recovery Current vs. dI

VR = 720 V

= 125 °C

T

J

T

= 25 °C

J

dIF/dt (A/µs)

2000

/dt

F

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Revision: 03-May-10 5

GA75TS120UPbF

Vishay High Power Products

L2

L1

+

V

CC

-

+ V

- V

G2

Fig. 17a - Test Circuit for Measurement of ILM, Eon, E

+ V

GE

R

G2

­R

+

G2

G1

R

G2

R

G1

L3

I

, t

rr

d(on)

90 % V

= 60 % of BV

V

CC

LS = L1 + L2 + L3

= ± 15 V

V

GE

, tr, t

, t

d(off)

GE

f

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 75 A

L

CES

off(diode)

, trr, Qrr,

10 % + V

10 % I

V

CC

t

d(on)

Fig. 17c - Test Waveforms for Circuit of Fig. 18a,

I

C

G

C

t1

V

CE

5 % V

t

r

Defining E

t

Gate voltage D.U.T.

+ V

G

90 % I

C

CE

, t

, t

on

d(on)

rr

D.U.T. voltage
and current

I

pk

Eon =

VCE IC dt

∫

t1

t2

r

t

Qrr =

id dt

IC dt

∫

t

x

I

C

t2

rr

V

CE

I

C

10 % V

t

d(off)

CE

90 % I

I

C

t

f

C

5 % I

C

t1 + 5 µs

Vce ic dt

E

=

VCE IC dt

off

∫

t1

t1

t2

Fig. 17b - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

, t

off

d(off)

f

Fig. 17d - Test Waveforms for Circuit of Fig. 18a,

V

Gate signal

G

device under test

Current D.U.T.

Voltage in D.U.T.

Current in D1

t

x

10 % V

V

pk

Diode reverse
recovery energy

I

Defining E

10 % I

CC

rr

Diode recovery
waveforms

t3

, trr, Qrr, I

rec

rr

V

CC

t4

E

=

VD IC dt

rec

∫

t3

t4

rr

t0

t2

t1

Fig. 17e - Macro Waveforms for Figure 18a‘s Test Circuit

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Document Number: 94427

6 Revision: 03-May-10

GA75TS120UPbF

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 75 A

L

V

50 V

1000 V

6000 µF

100 V

* Driver same type as D.U.T.; VC = 80 % of VCE (max)

Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I

Fig. 18 - Clamped Inductive Load Test Circuit Fig. 19 - Pulsed Collector Current Test Circuit

ORDERING INFORMATION TABLE

Device code

*

C

d

G A 75 T S 120 U PbF

D.U.T.

Vishay High Power Products

0 - 600 V

51324678

RL ==

4 x I

600 V

at 25 °C

C

CIRCUIT CONFIGURATION

1 - Insulated gate bipolar transistor (IGBT)

2 - Generation 4, IGBT silicon, DBC construction

3 - Current rating (75 = 75 A)

4 - Circuit configuration (T = Half-bridge)

5 - Package indicator (INT-A-PAK)

6 - Voltage rating (120 = 1200 V)

7 - Speed/type (U = Ultrafast)

- PbF = Lead (Pb)-free

8

3

6

7

1

4

5

2

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95173

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DIMENSIONS in millimeters (inches)

17 (0.67)

23 (0.91)

5 (0.20)

23 (0.91)

14.3

(0.56)

3 screws M6 x 10

66 (2.60)

94 (3.70)

35 (1.38)

14.5
(0.57)

1

2

3

2.8 x 0.8
(0.11 x 0.03)

5

4

7

6

37 (1.44)

80 (3.15)

Ø 6.5

(Ø 0.25)

30

(1.18)

9 (0.33)

7 (0.28)

28 (1.10)

29 (1.15)

Outline Dimensions

Vishay Semiconductors

INT-A-PAK IGBT

Document Number: 95173 For technical questions, contact: [e-mail]
Revision: 04-May-09 1

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