Vishay GA400TD60S Data Sheet
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Dual INT-A-PAK Low Profile “Half Bridge”
Dual INT-A-PAK Low Profile
PRODUCT SUMMARY
V
CES
DC at TC = 25 °C 750 A
I
C
(typical) at 400 A, 25 °C 1.24 V
V
CE(on)
Speed DC to 1 kHz
Package DIAP low profile
Circuit Half bridge
(Standard Speed IGBT), 400 A
FEATURES
• Gen 4 IGBT technology
• Standard: optimized for hard switching speed
•Low V
• Square RBSOA
•HEXFRED
• Industry standard package
•Al
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
600 V
BENEFITS
• Increased operating efficiency
• Performance optimized as output inverter stage for TIG
• Direct mounting on heatsink
• Very low junction to case thermal resistance
CE(on)
®
antiparallel diode with ultrasoft reverse
recovery characteristics
DBC
2O3
please see www.vishay.com/doc?99912
welding machines
GA400TD60S
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Gate to emitter voltage V
Maximum power dissipation (IGBT) P
RMS isolation voltage V
Note
(1)
Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals
CES
C
CM
LM
ISOL
F
GE
(1)
D
TC = 25 °C 750
= 80 °C 525
T
C
TC = 25 °C 219
= 80 °C 145
T
C
TC = 25 °C 1563
T
= 80 °C 875
C
Any terminal to case
(V
t = 1 s, TJ = 25 °C)
RMS
600 V
1000
1000
± 20 V
3500 V
A
W
Revision: 12-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93363
GA400TD60S
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate threshold voltage V
Collector to emitter leakage current I
Diode forward voltage drop V
Gate to emitter leakage current I
BR(CES)VGE
CE(on)
GE(th)
CES
FM
GES
= 0 V, IC = 500 μA 600 - -
VGE = 15 V, IC = 300 A - 1.14 1.35
= 15 V, IC = 400 A - 1.24 1.52
V
GE
= 15 V, IC = 300 A, TJ = 125 °C - 1.08 1.29
V
GE
= 15 V, IC = 400 A, TJ = 125 °C - 1.21 1.5
V
GE
VCE = VGE, IC = 250 μA 3.0 4.6 6.3
VGE = 0 V, VCE = 600 V - 0.075 1
V
= 0 V, VCE = 600 V, TJ = 125 °C - 1.8 10
GE
IFM = 300 A - 1.48 1.75
= 400 A - 1.63 1.98
I
FM
= 300 A, TJ = 125 °C - 1.50 1.77
I
FM
= 400 A, TJ = 125 °C - 1.70 2.04
I
FM
VGE = ± 20 V - - ± 200 nA
Vishay Semiconductors
VCollector to emitter voltage V
mA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
on
off
tot
on
off
tot
d(on)
r
d(off)
f
Reverse bias safe operating area RBSOA
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
rr
rr
rr
rr
rr
rr
IC = 400 A, VCC = 360 V, VGE = 15 V,
R
= 1.5 , L = 500 μH, TJ = 25 °C
g
IC = 400 A, VCC = 360 V, VGE = 15 V,
= 1.5 , L = 500 μH, TJ = 125 °C
R
g
= 150 °C, IC = 1000 A, VCC = 400 V,
T
J
V
= 600 V, Rg = 22 VGE = 15 V to 0 V,
P
L = 500 μH
IF = 300 A, dIF/dt = 500 A/μs,
V
= 400 V, TJ = 25 °C
CC
IF = 300 A, dIF/dt = 500 A/μs,
= 400 V, TJ = 125 °C
V
CC
-8.5-
- 113 -
- 121.5 -
-21-
mJ
- 163 -
- 184 -
- 532 -
- 377 -
- 496 -
ns
- 1303 -
Fullsquare
- 150 179 ns
-4359A
-3.96.3μC
- 236 265 ns
-6480A
- 8.6 11.1 μC
Revision: 12-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93363
GA400TD60S
I
C
(A)
VCE (V)
0.25 0.50 1.00 1.50 2.000.75 1.25 1.75
0
93363_01
800
200
100
400
300
600
500
700
TJ = 25 °C
TJ = 125 °C
I
C
(A)
VCE (V)
0.25 0.50 1.00 1.50 2.001.250.75 1.75
93363_02
0
800
200
100
400
300
600
500
700
VGE = 9 V
VGE = 12 V
V
GE
= 15 V
V
GE
= 18 V
Allowable Case Temperature (°C)
IC - Continuous Collector Current (A)
300100
800500
400200
600 700
0
100
160
0
40
60
140
80
120
20
93363_03
DC
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction and storage temperature range T
Junction to case per leg
IGBT
Case to sink per module R
Mounting torque
case to heatsink: M6 screw 4 - 6
case to terminal 1, 2, 3: M5 screw 2 - 4
J
R
, T
thJC
thCS
Stg
Weight - 270 - g
-40 - 150 °C
- - 0.08
-0.05-
Vishay Semiconductors
°C/WDiode - - 0.4
Nm
Fig. 1 - Typical Output Characteristics,
Revision: 12-Jun-15
Fig. 2 - Typical Output Characteristics,
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
T
= 25 °C, VGE = 15 V
J
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
T
= 125 °C
J
Fig. 3 - Maximum DC IGBT Collector Current vs.
Case Temperature
1.7
1.6
(V)
CE
V
93363_04
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100 A
20 40 80 120 16060 100 140
600 A
400 A
300 A
TJ (°C)
Fig. 4 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature,
V
= 15 V
GE
3
Document Number: 93363
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